CN105576078A - Preparation method of CdS-based schottky detector chip passivation film - Google Patents
Preparation method of CdS-based schottky detector chip passivation film Download PDFInfo
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- CN105576078A CN105576078A CN201511018984.7A CN201511018984A CN105576078A CN 105576078 A CN105576078 A CN 105576078A CN 201511018984 A CN201511018984 A CN 201511018984A CN 105576078 A CN105576078 A CN 105576078A
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- cds
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- detector chip
- passivation film
- magnetron sputtering
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000002161 passivation Methods 0.000 title abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 29
- 239000002184 metal Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to a preparation method of a passivation film, in particular to a preparation method of a CdS-based schottky detector chip passivation film. Specifically, with ZnS as a material, the CdS-based schottky detector chip passivation film is prepared by magnetron sputtering process equipment, so that the problem that the preparation method of the passivation film in the prior art is not suitable for a CdS schottky device is solved; firm combination of a passivation film layer and a CdS substrate material can be achieved; the technology is simple and convenient; the repeatability is good; and the reliability is high.
Description
Technical field
The present invention relates to the preparation method of passivating film, particularly a kind of preparation method of CdS base schottky type detector chip passivating film.
Background technology
CdS base schottky type device is a kind of near ultraviolet based on photovoltaic effect and some visible light sensitive detection parts, it completes technique preparation on the brilliant CdS material foundation of body, as shown in Figure 1, wherein step a is for carrying out cleaning post-etching removal damage layer by brilliant for body CdS material for the structure of matter schematic diagram that each step of CdS base schottky type device fabrication process obtains; Step b is growth ohmic contact metal layer; Step c is for preparing passivating film; Steps d is growth Pt schottky metal layer; Step e completes device for sputtering Cr/Au metal electrode.
CdS base schottky type device has high IR transmitance, fast response time, detectivity high.In military guidance field, there is important application.
How to control passivation film and CdS substrate, the bond strength of passivation film and metallic diaphragm is one of difficult point of CdS base schottky type device preparation technology.The growth general using plasma enhanced chemical vapor deposition pecvd process of current passivation film.The Si of PECVD deposit
xn
yrete has high-k, high insulation resistance, low damage, mobile ion and steam etc. are had to the features such as good blocking capability, but all there is larger mechanical stress in the passivating film of most PECVD, cause the poor bonding strength such as itself and CdS substrate, metallic diaphragm, experience high/low-temperature impact after come off, component failure.
Eliminate the Si of PECVD
xn
ystress in thin film adopts SiO usually
2and Si
xn
ythe method of composite film, be deposited on together by two of suitable thickness kinds of passivating films that stress characteristics is contrary, two kinds of stress are cancelled out each other, and just define a kind of composite passivation film of low stress.Although the method can strengthen the bond strength of passivation layer and CdS, the Pt metal layer bond strength that the Si compound rete that PECVD produces contacts with CdS device Schottky is low, and poor reliability, is in this way not suitable for the manufacture of CdS Schottky type device.
Summary of the invention
In view of the above problems, the invention provides a kind of preparation method of CdS base schottky type detector chip passivating film, the strong bonded of passivation film and CdS base material, metallic diaphragm can be realized, and simple process.
The invention provides a kind of preparation method of CdS base schottky type detector chip passivating film, employing ZnS is material, spatters process equipment prepare CdS base schottky type detector chip passivating film by magnetic control.
Beneficial effect of the present invention is as follows:
The embodiment of the present invention adopts ZnS to be material, CdS base schottky type detector chip passivating film is prepared by magnetron sputtering technique equipment, solve the problem that the preparation method of passivating film in prior art is not suitable for CdS base schottky type device, the strong bonded of passivation film and CdS base material, metallic diaphragm can be realized, and simple process, reproducible, reliability is high.
Accompanying drawing explanation
Fig. 1 is the structure of matter schematic diagram that each step of CdS base schottky device fabrication process in prior art obtains;
Fig. 2 is the I-V test curve figure of the CdS base schottky type device of the embodiment of the present invention;
Fig. 3 is the I-V test curve figure of CdS base schottky type device in comparative example.
Embodiment
The problem of CdS Schottky type device is not suitable in order to solve the preparation method of passivating film in prior art, the invention provides a kind of preparation method of CdS base schottky detector chip passivating film, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, do not limit the present invention.
According to inventive embodiment, provide a kind of preparation method of CdS base schottky type detector chip passivating film, employing ZnS is material, prepares CdS base schottky type detector chip passivating film by magnetron sputtering technique equipment.When the preparation method of the CdS base schottky type detector chip passivating film utilizing the embodiment of the present invention prepares CdS base schottky type device, the operation of all the other steps is same as the prior art, such as, step a in Fig. 1, step b, steps d and step e, do not do particular determination at this.
Concrete, the optimum configurations of described magnetron sputtering technique equipment is: vacuum degree a:a≤3.0 × 10
-6torr, temperature: 30 DEG C ~ 50 DEG C, radio-frequency power: 120 ~ 180W.Described magnetron sputtering technique equipment is the model of Denton company of the U.S. is in embodiments of the present invention the magnetron sputtering apparatus of Explorer14.
More concrete, the parameter of described magnetron sputtering technique equipment is set to further: the pre-sputtering time: 300 ~ 500s, rotates: 10 ~ 40%, Ar throughput: 20 ~ 40sccm, sputter rate: 21 ~ 22nm/min, temperature fall time b:b >=30min.
Preferably, the optimum configurations of described magnetron sputtering technique equipment is:
Vacuum degree a:3.0 × 10
-6torr; Temperature: 40 DEG C; The pre-sputtering time: 400s, radio-frequency power: 120 ~ 180W, rotates: 20%, Ar throughput: 20sccm, sputter rate 21 ~ 22nm/min, temperature fall time b:30min.
More preferably tellurium, the optimum configurations of described magnetron sputtering technique equipment is: vacuum degree a:3.0 × 10
-6torr, temperature: 40 DEG C, the pre-sputtering time: 400s, radio-frequency power: 150W, rotates: 20%, Ar throughput: 20sccm, sputter rate: 21.5nm/min, temperature fall time b:30min, this is one and verifies through many experiments, passivating film good passivation effect, the optimum configurations of the magnetron sputtering technique equipment that reliability is high.
According to the optimum configurations of above-mentioned preferred magnetron sputtering technique equipment, prepare CdS base schottky type detector chip passivating film and meet device layout requirement, the thickness of deposit is 200nm.
Take ZnS as material, the optimum configurations of above-mentioned preferred magnetron sputtering technique equipment is utilized to prepare on the basis of CdS base schottky type detector chip passivating film, conventionally conventional method completing steps d grows Pt schottky metal layer, sputter Cr/Au metal electrode with step e and complete device, prepare CdS base schottky type device, I-V test is carried out to the CdS base schottky type device obtained, the volt-ampere characteristic figure of the CdS base schottky type device obtained, namely I-V test curve figure as shown in Figure 2, the wherein I-V test curve figure of initial CdS base schottky type device of Fig. 2-1 for preparing, Fig. 2-2 is the I-V test curve figure of the CdS base schottky type device after experience 77K ~ 373K temperature shock 50 times, as shown in Figure 2, utilize the detector chip passivation film good passivation effect that the preparation method of a kind of CdS base schottky of embodiment of the present invention type detector chip passivating film prepares, reliability is high, what meet CdS base schottky type detector chip manufactures and designs requirement.
Comparative example:
From the difference of the embodiment of the present invention, comparative example is only that the optimum configurations of magnetron sputtering technique equipment is different, described in comparative example, the optimum configurations of magnetron sputtering technique equipment is: vacuum degree a:3.0 × 10
-6torr, temperature: 40 DEG C, the pre-sputtering time: 400s, radio-frequency power: 300W, rotates: 20%, Ar throughput: 20sccm, sputter rate: 43nm/min, temperature fall time b:30min.
Prepare on the basis of CdS base schottky type detector chip passivating film in comparative example, Pt schottky metal layer is grown according to the method completing steps d of the embodiment of the present invention, sputter Cr/Au metal electrode with step e and complete device, prepare CdS base schottky type device, I-V test is carried out to the CdS base schottky type device obtained, the I-V test curve figure of CdS base schottky type device in the comparative example obtained, as shown in Figure 3, its open circuit voltage is little, and leakage current is large, does not meet design requirement.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (5)
1. a preparation method for CdS base schottky type detector chip passivating film, is characterized in that, employing ZnS is material, prepares CdS base schottky type detector chip passivating film by magnetron sputtering technique equipment.
2. preparation method as claimed in claim 1, it is characterized in that, the optimum configurations of described magnetron sputtering technique equipment is:
Vacuum degree a:a≤3.0 × 10
-6torr; Temperature: 30 DEG C ~ 50 DEG C; Radio-frequency power: 120 ~ 180W.
3. preparation method as claimed in claim 2, it is characterized in that, the parameter of described magnetron sputtering technique equipment is set to further:
The pre-sputtering time: 300 ~ 500s, rotate: 10 ~ 40%, Ar throughput: 20 ~ 40sccm, sputter rate 21 ~ 22nm/min, temperature fall time b:b >=30min.
4. preparation method as claimed in claim 3, it is characterized in that, the optimum configurations of described magnetron sputtering technique equipment is:
Vacuum degree a:3.0 × 10
-6torr; Temperature: 40 DEG C; The pre-sputtering time: 400s, radio-frequency power: 120 ~ 180W, rotates: 20%, Ar throughput: 20sccm, sputter rate 21 ~ 22nm/min, temperature fall time b:30min.
5. preparation method as claimed in claim 4, it is characterized in that, the optimum configurations of described magnetron sputtering technique equipment is:
Vacuum degree a:3.0 × 10
-6torr; Temperature: 40 DEG C; The pre-sputtering time: 400s, radio-frequency power: 150W, rotates: 20%, Ar throughput: 20sccm, sputter rate 21.5nm/min, temperature fall time b:30min.
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| CN201511018984.7A CN105576078A (en) | 2015-12-29 | 2015-12-29 | Preparation method of CdS-based schottky detector chip passivation film |
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| CN201511018984.7A CN105576078A (en) | 2015-12-29 | 2015-12-29 | Preparation method of CdS-based schottky detector chip passivation film |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251672A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Photodiode for infrared ray detection |
| CN102420270A (en) * | 2011-11-10 | 2012-04-18 | 中国科学院上海技术物理研究所 | Extended electrode for photovoltaic tellurium-cadmium-mercury probe and preparation method for extended electrode |
| CN103165724A (en) * | 2013-03-26 | 2013-06-19 | 中国科学院上海技术物理研究所 | Tellurium-cadmium-mercury grid-controlled structure photoconductive detector for Hall test |
| CN104201237A (en) * | 2014-08-22 | 2014-12-10 | 中国电子科技集团公司第十一研究所 | Multi-element infrared detector table device and manufacturing method thereof |
-
2015
- 2015-12-29 CN CN201511018984.7A patent/CN105576078A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01251672A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Photodiode for infrared ray detection |
| CN102420270A (en) * | 2011-11-10 | 2012-04-18 | 中国科学院上海技术物理研究所 | Extended electrode for photovoltaic tellurium-cadmium-mercury probe and preparation method for extended electrode |
| CN103165724A (en) * | 2013-03-26 | 2013-06-19 | 中国科学院上海技术物理研究所 | Tellurium-cadmium-mercury grid-controlled structure photoconductive detector for Hall test |
| CN104201237A (en) * | 2014-08-22 | 2014-12-10 | 中国电子科技集团公司第十一研究所 | Multi-element infrared detector table device and manufacturing method thereof |
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Application publication date: 20160511 |