JPH01251620A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH01251620A JPH01251620A JP7946188A JP7946188A JPH01251620A JP H01251620 A JPH01251620 A JP H01251620A JP 7946188 A JP7946188 A JP 7946188A JP 7946188 A JP7946188 A JP 7946188A JP H01251620 A JPH01251620 A JP H01251620A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- interconnections
- layer
- etching
- electrochemical etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011241 protective layer Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7946188A JPH01251620A (ja) | 1988-03-30 | 1988-03-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7946188A JPH01251620A (ja) | 1988-03-30 | 1988-03-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01251620A true JPH01251620A (ja) | 1989-10-06 |
| JPH0450738B2 JPH0450738B2 (enExample) | 1992-08-17 |
Family
ID=13690520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7946188A Granted JPH01251620A (ja) | 1988-03-30 | 1988-03-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01251620A (enExample) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370770A (en) * | 1976-12-07 | 1978-06-23 | Nec Corp | Production of schottky barrier gate type field effect transistor |
-
1988
- 1988-03-30 JP JP7946188A patent/JPH01251620A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370770A (en) * | 1976-12-07 | 1978-06-23 | Nec Corp | Production of schottky barrier gate type field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0450738B2 (enExample) | 1992-08-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
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| RD02 | Notification of acceptance of power of attorney |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080817 Year of fee payment: 16 |
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| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080817 Year of fee payment: 16 |