JPH01251618A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH01251618A
JPH01251618A JP7945988A JP7945988A JPH01251618A JP H01251618 A JPH01251618 A JP H01251618A JP 7945988 A JP7945988 A JP 7945988A JP 7945988 A JP7945988 A JP 7945988A JP H01251618 A JPH01251618 A JP H01251618A
Authority
JP
Japan
Prior art keywords
etching
layer
type semiconductor
substrate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7945988A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0450736B2 (enExample
Inventor
Keizo Yamada
恵三 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7945988A priority Critical patent/JPH01251618A/ja
Publication of JPH01251618A publication Critical patent/JPH01251618A/ja
Publication of JPH0450736B2 publication Critical patent/JPH0450736B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
JP7945988A 1988-03-30 1988-03-30 半導体装置の製造方法 Granted JPH01251618A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7945988A JPH01251618A (ja) 1988-03-30 1988-03-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7945988A JPH01251618A (ja) 1988-03-30 1988-03-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH01251618A true JPH01251618A (ja) 1989-10-06
JPH0450736B2 JPH0450736B2 (enExample) 1992-08-17

Family

ID=13690465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7945988A Granted JPH01251618A (ja) 1988-03-30 1988-03-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH01251618A (enExample)

Also Published As

Publication number Publication date
JPH0450736B2 (enExample) 1992-08-17

Similar Documents

Publication Publication Date Title
US3493820A (en) Airgap isolated semiconductor device
GB972512A (en) Methods of making semiconductor devices
US2795742A (en) Semiconductive translating devices utilizing selected natural grain boundaries
KR980011717A (ko) 마스크(Mask)의 구조 및 제조방법
US3616348A (en) Process for isolating semiconductor elements
US3142021A (en) Monolithic semiconductor amplifier providing two amplifier stages
JPS6135705B2 (enExample)
JP3143915B2 (ja) 電解エッチングされる半導体基板
JPH01251618A (ja) 半導体装置の製造方法
US3746944A (en) Contact members for silicon semiconductor devices
JPH01251619A (ja) 半導体装置の製造方法
US3108209A (en) Transistor device and method of manufacture
GB967365A (en) Semiconductor devices
JPS5834943A (ja) 半導体装置の製造方法
JPH01251620A (ja) 半導体装置の製造方法
JPS6412105B2 (enExample)
JPS5838939B2 (ja) 集積回路
JPH07193258A (ja) 半導体素子
JPS6124245A (ja) 半導体装置
JPS5858785A (ja) 半導体レ−ザ−装置
JP2712375B2 (ja) 半導体集積回路の製造方法
JPS59172772A (ja) サイリスタの製造方法
JPH07326604A (ja) 半導体装置の製造方法
JPS6246561A (ja) シヨツトキ−バリヤ型半導体装置の製造方法
JPH11329263A (ja) 真空ｌｓｉ