JPH01248542A - Solid-state photosensor - Google Patents
Solid-state photosensorInfo
- Publication number
- JPH01248542A JPH01248542A JP63077115A JP7711588A JPH01248542A JP H01248542 A JPH01248542 A JP H01248542A JP 63077115 A JP63077115 A JP 63077115A JP 7711588 A JP7711588 A JP 7711588A JP H01248542 A JPH01248542 A JP H01248542A
- Authority
- JP
- Japan
- Prior art keywords
- light
- glass
- solid
- light receiving
- photosensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000002834 transmittance Methods 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 229910021607 Silver chloride Inorganic materials 0.000 abstract description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Exposure Control For Cameras (AREA)
- Exposure Or Original Feeding In Electrophotography (AREA)
- Glass Compositions (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体受光素子を用いた固体受光素子に関し
、特に受光面にガラスキャップを用いた固体受光素子に
関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a solid state light receiving element using a semiconductor light receiving element, and particularly to a solid state light receiving element using a glass cap on the light receiving surface.
従来固体受光装置は、受光した光を電気信号に変換する
半導体受光素子をケース内に密閉収納した構造となって
おり、ケースの前面、すなわち固体受光装置の受光面は
光学的に透明な、ガラス板を使用していた。Conventional solid-state photodetectors have a structure in which a semiconductor photodetector that converts the received light into an electrical signal is hermetically housed in a case.The front of the case, that is, the light-receiving surface of the solid-state photodetector, is made of optically transparent glass. I was using a board.
固体受光装置は一般に監視用カメラ等の画像入力装置と
して用いられている。しがし、監視用カメラ等は自動絞
りを持たない為、強い光をあてると、固体受光装置の出
力が飽和してしまい、画像が見えなくなってしまうと言
う欠点がある。Solid-state light receiving devices are generally used as image input devices such as surveillance cameras. However, since surveillance cameras do not have automatic apertures, they have the disadvantage that if strong light is applied to them, the output of the solid-state light receiving device will become saturated and the image will no longer be visible.
本発明は、上述の問題点を解決し、強い光が入射しても
出力が飽和しない固体受光装置を得ることを目的として
いる。The present invention aims to solve the above-mentioned problems and provide a solid-state light receiving device whose output does not become saturated even when strong light is incident.
本発明の固体受光装置は、受光した光を電気信号に変換
する半導体受光素子をケース内に密閉収納した固体受光
装置において、受光面に相当するケース前面に入射する
光の強度により透過率が変化するガラスを使用している
。The solid-state light receiving device of the present invention is a solid-state light receiving device in which a semiconductor light receiving element that converts received light into an electrical signal is hermetically housed in a case, and the transmittance changes depending on the intensity of light incident on the front surface of the case, which corresponds to the light receiving surface. It uses glass.
本発明は、受光面のガラスの透過率が入射光量により変
化する。すなわち、強い光があたると透過率がおち、固
体受光装置内に入射する光の強度が一定になる。このな
め、強い光を受光しても出力が飽和することが妨げる。In the present invention, the transmittance of the glass on the light receiving surface changes depending on the amount of incident light. That is, when strong light hits, the transmittance decreases, and the intensity of light entering the solid-state light receiving device becomes constant. This lag prevents the output from becoming saturated even when strong light is received.
この固体受光装置を画像入力装置に用いれば常に良質の
画像が得られる。If this solid-state light receiving device is used in an image input device, high quality images can always be obtained.
〔実施例１〕 第１図は本発明の一実施例の縦断面図である。[Example 1] FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
半導体受光素子１はセラミックのケース２にマウントさ
れ、Ａ！！線３で配線されている。受光面となるケース
前面のガラスキャップ４は、本実施例においては、アル
カリ・アルミノ・ホウケイ酸ガラスに、塩化銀を含むい
わゆるホトクロミックガラスを用いた。厚さは１．５關
である。半導体受光素子ｌは半導体基板に不純物を拡散
してｐｎ接合を形成したホトダイオードを用いた。The semiconductor photodetector 1 is mounted in a ceramic case 2, and A! ! It is wired with line 3. In this embodiment, the glass cap 4 on the front surface of the case, which serves as a light-receiving surface, is made of alkali-alumino-borosilicate glass and so-called photochromic glass containing silver chloride. The thickness is 1.5 mm. As the semiconductor light receiving element 1, a photodiode in which a pn junction was formed by diffusing impurities into a semiconductor substrate was used.
〔実施例２〕
この実施例では、前述のガラスキャップ４として同じく
アルカリ・アルミノ・ホウケイ酸ガラスに、塩化銀と臭
化銀とを含むホトクロミックガラスを用い、ホトクロミ
ックガラスの感度を６５゜ｎｌ１１まで応答するように
した。この他は前述の実施例と同じである。[Example 2] In this example, a photochromic glass containing silver chloride and silver bromide in addition to the alkali-alumino-borosilicate glass was used as the glass cap 4 described above, and the sensitivity of the photochromic glass was set to 65°nl11. I made it respond until. The rest is the same as the previous embodiment.
尚、半導体受光素子はホトダイオードのほか、ホトトラ
ンジスタ、アバランシ・ホトダイオード、ｐｉｎホトダ
イオード、光伝導を利用した素子、ホトサイリスタ等光
を受光する機能のある素子であればどのようなものでも
よい。In addition to the photodiode, the semiconductor light-receiving element may be any element capable of receiving light, such as a phototransistor, an avalanche photodiode, a pin photodiode, an element using photoconduction, or a photothyristor.
以上説明したように本発明の固体受光装置は光が入射す
るガラスキャップ（受光面）にホトクロミックガラスを
使用している。ホトクロミックガラスは強い光があたる
と黒化し、固体受光装置内に入射する光を減光する。従
って本発明の装置をカメラ等に使用すると、カメラに自
動絞りと言う複雑な機能をつけなくても、強い光があた
っても一定の画質が得られるという効果がある。As explained above, the solid state light receiving device of the present invention uses photochromic glass for the glass cap (light receiving surface) into which light enters. Photochromic glass turns black when exposed to strong light, reducing the amount of light that enters the solid-state light receiving device. Therefore, when the device of the present invention is used in a camera or the like, it is possible to obtain a constant image quality even when exposed to strong light without adding a complicated function such as an automatic aperture to the camera.
第１図は本発明の固体受光装置の縦断面図である。
１・・・半導体受光素子、２・・・セラミックケース、
３・・６・Ａｌ配線、４・・・ガラスキャップ。FIG. 1 is a longitudinal sectional view of a solid state light receiving device of the present invention. 1... Semiconductor photodetector, 2... Ceramic case,
3..6.Al wiring, 4..Glass cap.
Claims (1)
ース内に密閉収納した固体受光装置において、受光面に
相当するケース前面に、入射する光の強度により透過率
が変化するガラスを備えている事を特徴とする固体受光
装置。In a solid-state light receiving device in which a semiconductor light receiving element that converts received light into an electrical signal is hermetically housed in a case, the front surface of the case, which corresponds to the light receiving surface, is equipped with a glass whose transmittance changes depending on the intensity of the incident light. A solid-state light receiving device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63077115A JPH01248542A (en) | 1988-03-29 | 1988-03-29 | Solid-state photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63077115A JPH01248542A (en) | 1988-03-29 | 1988-03-29 | Solid-state photosensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01248542A true JPH01248542A (en) | 1989-10-04 |
Family
ID=13624788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63077115A Pending JPH01248542A (en) | 1988-03-29 | 1988-03-29 | Solid-state photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01248542A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1067780A2 (en) * | 1999-06-30 | 2001-01-10 | Canon Kabushiki Kaisha | Image pickup apparatus |
| EP1067802A3 (en) * | 1999-06-30 | 2002-11-27 | Canon Kabushiki Kaisha | Colour image pickup apparatus |
| EP1067779A3 (en) * | 1999-06-30 | 2002-11-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6833873B1 (en) | 1999-06-30 | 2004-12-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6885404B1 (en) | 1999-06-30 | 2005-04-26 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US7138695B2 (en) * | 2001-05-16 | 2006-11-21 | Samsung Electro-Mechanics Ltd. | Image sensor module and method for fabricating the same |
| US7235831B2 (en) | 1999-02-25 | 2007-06-26 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US7474349B2 (en) | 2002-12-26 | 2009-01-06 | Canon Kabushiki Kaisha | Image-taking apparatus |
| EP2389001A2 (en) | 2010-05-20 | 2011-11-23 | Sony Corporation | Solid-State Imaging Device and Electronic Equipment |
| US8605175B2 (en) | 2010-03-31 | 2013-12-10 | Sony Corporation | Solid-state image capturing device including a photochromic film having a variable light transmittance, and electronic device including the solid-state image capturing device |
-
1988
- 1988-03-29 JP JP63077115A patent/JPH01248542A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7235831B2 (en) | 1999-02-25 | 2007-06-26 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US6980248B1 (en) | 1999-06-30 | 2005-12-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
| EP1067802A3 (en) * | 1999-06-30 | 2002-11-27 | Canon Kabushiki Kaisha | Colour image pickup apparatus |
| EP1067780A3 (en) * | 1999-06-30 | 2002-11-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6833873B1 (en) | 1999-06-30 | 2004-12-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6859229B1 (en) | 1999-06-30 | 2005-02-22 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6882368B1 (en) | 1999-06-30 | 2005-04-19 | Canon Kabushiki Kaisha | Image pickup apparatus |
| EP1067779A3 (en) * | 1999-06-30 | 2002-11-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
| EP1067780A2 (en) * | 1999-06-30 | 2001-01-10 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US6885404B1 (en) | 1999-06-30 | 2005-04-26 | Canon Kabushiki Kaisha | Image pickup apparatus |
| US7138695B2 (en) * | 2001-05-16 | 2006-11-21 | Samsung Electro-Mechanics Ltd. | Image sensor module and method for fabricating the same |
| US7474349B2 (en) | 2002-12-26 | 2009-01-06 | Canon Kabushiki Kaisha | Image-taking apparatus |
| US8605175B2 (en) | 2010-03-31 | 2013-12-10 | Sony Corporation | Solid-state image capturing device including a photochromic film having a variable light transmittance, and electronic device including the solid-state image capturing device |
| US9219090B2 (en) | 2010-03-31 | 2015-12-22 | Sony Corporation | Solid-state image capturing device and electronic device |
| EP2389001A2 (en) | 2010-05-20 | 2011-11-23 | Sony Corporation | Solid-State Imaging Device and Electronic Equipment |
| US8754968B2 (en) | 2010-05-20 | 2014-06-17 | Sony Corporation | Solid-state imaging device and electronic equipment |
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