JPH01248033A - Semiconductor type pressure sensor - Google Patents
Semiconductor type pressure sensorInfo
- Publication number
- JPH01248033A JPH01248033A JP7555288A JP7555288A JPH01248033A JP H01248033 A JPH01248033 A JP H01248033A JP 7555288 A JP7555288 A JP 7555288A JP 7555288 A JP7555288 A JP 7555288A JP H01248033 A JPH01248033 A JP H01248033A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- screw
- pressure medium
- sealing member
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000007788 liquid Substances 0.000 claims abstract description 25
- 238000007789 sealing Methods 0.000 claims abstract description 24
- 230000006866 deterioration Effects 0.000 claims description 4
- 229920002545 silicone oil Polymers 0.000 abstract description 23
- 229910000831 Steel Inorganic materials 0.000 abstract description 14
- 239000010959 steel Substances 0.000 abstract description 14
- 238000001514 detection method Methods 0.000 description 16
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、圧力検出素子として半導体圧力検出素子を使
用し、その圧力信号を用いて建設機械等の油圧制御等を
行うために使用される半導体式圧力センサに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention uses a semiconductor pressure detection element as a pressure detection element, and the pressure signal is used to perform hydraulic control of construction machinery, etc. Related to semiconductor pressure sensors.
被検出圧力に応じた電気信号を発生する圧力センサとし
て、従来から種々の検出原理のものが知られているが、
近年に至りシリコン基板にピエゾ抵抗素子を形成してな
る、いわゆる半導体圧力検出素子が広く使用されるよう
になってきた。Pressure sensors that generate electrical signals according to the detected pressure have been known for a variety of detection principles.
In recent years, so-called semiconductor pressure sensing elements, which are formed by forming piezoresistive elements on a silicon substrate, have come into wide use.
ところで、この半導体圧力検出素子を用いた圧力センサ
には、この素子の劣化に伴う問題点を除（ため、シリコ
ーンオイル等の適当な液体中に検出素子を封入した状態
で使用する、いわゆる液封型圧力センサとして構成され
たものが知られており、その−例を第３図に示す。By the way, in order to eliminate problems associated with the deterioration of this element, pressure sensors using this semiconductor pressure sensing element have a so-called liquid seal, in which the sensing element is encapsulated in a suitable liquid such as silicone oil. A type pressure sensor configured as a type pressure sensor is known, an example of which is shown in FIG.
この第３図において、１０１はシリコン基板の一生面上
にピエゾ抵抗素子１０２を形成して作られた圧力検出素
子で、はうけい酸ガラス等の絶縁物から成る台座１０３
の上に気密に接着されている。この台座１０３はセンサ
室１０４を構成するセンサボディ１０５に気密に固定さ
れ、検出素子１０１の他主面側を大気中等に連通させる
ための連通孔１０６や、検出素子１０１がらリード線１
０７を介して取り出される電気信号を外部に導くための
ハーメチック端子１０８が設けられている。In FIG. 3, reference numeral 101 denotes a pressure detection element made by forming a piezoresistive element 102 on the entire surface of a silicon substrate, and a pedestal 103 made of an insulating material such as silicate glass.
is hermetically bonded to the top. This pedestal 103 is airtightly fixed to a sensor body 105 constituting a sensor chamber 104, and has a communication hole 106 for communicating the other main surface side of the detection element 101 with the atmosphere, and a lead wire 1 from the detection element 101.
A hermetic terminal 108 is provided for guiding the electrical signal taken out through the terminal 07 to the outside.
１０９はシールダイヤフラムで、その周辺部１０９ａが
ボディ１０５に溶接等によって固着され、検出素子１０
１を覆ってセンサ室１０４を区画している。109 is a seal diaphragm, the peripheral portion 109a of which is fixed to the body 105 by welding or the like, and the detection element 10
The sensor chamber 104 is partitioned by covering the sensor chamber 104.
ボディ１０５にはセンサ室１０４を外部に連通させる為
の孔１１０が設けられており、検出素子１０１やシール
ダイヤフラム１０９を取付けたあと、この孔１１０によ
ってセンサ室１０４内を真空脱気し、その後、シリコー
ンオイル等の液体ヲこの孔１１０からセンサ室１０４の
中に注入し、孔１１０に栓１１１を打ち込んで封止する
。The body 105 is provided with a hole 110 for communicating the sensor chamber 104 with the outside, and after the detection element 101 and seal diaphragm 109 are installed, the inside of the sensor chamber 104 is evacuated through the hole 110, and then, A liquid such as silicone oil is injected into the sensor chamber 104 through the hole 110, and a plug 111 is driven into the hole 110 to seal it.
一方、センサボディ１０５には０リング等の気密リング
パツキン１１２を介してフランジ１１３がネジ１１４等
によって組付けられ、圧力センサとして構成される。On the other hand, a flange 113 is attached to the sensor body 105 with screws 114 or the like via an airtight ring packing 112 such as an O-ring, thereby forming a pressure sensor.
こうして作られた圧力センサには、フランジ１１３に設
けられている孔１１５から被測定圧力が、その圧力導入
室１１６の中に導入され、この結果、圧力検出素子１０
１はシールダイヤフラ１１０９とセンサ室１０４内に密
封されているシリコーンオイルを介して被測定圧力を受
け、それに応じた電気信号を端子１０８に発生し、圧力
センサとして動作することになる。In the pressure sensor manufactured in this way, the pressure to be measured is introduced into the pressure introduction chamber 116 from the hole 115 provided in the flange 113, and as a result, the pressure detection element 10
1 receives the measured pressure via the seal diaphragm 1109 and the silicone oil sealed in the sensor chamber 104, generates an electric signal corresponding to the measured pressure at the terminal 108, and operates as a pressure sensor.
又、この液封型圧力センサによれば、検出素子１０１の
検出面がシリコーンオイル等の安定な液体によって封じ
込められているため、被測定圧力がもたらす液体等によ
る劣化の恐れがなく、耐環境性に富み、高い信頼性を与
えることができる。In addition, according to this liquid seal type pressure sensor, since the detection surface of the detection element 101 is sealed with a stable liquid such as silicone oil, there is no risk of deterioration due to liquid etc. caused by the pressure to be measured, and it has excellent environmental resistance. It is rich in information and can provide high reliability.
〔発明が解決しようとする課Ｈ］
ところで圧力センサは、センサ室１０４内の液体に被測
定圧力がそのまま与えられ、その圧力は油圧機器等では
２０００気圧にも達する場合がある。その場合、上述し
た第３図に示すような従来の圧力センサでは、栓１１１
の一端には大気が、′ 又他端にはシリコーンオイル
１０４が作用しているので、被測定圧力がシリコーンオ
イル１０４を介してそのまま栓１１１に加えられること
となり、センサボディ１０５に対する栓１１１の固着を
充分に行わないと、この栓１１１の部分で液洩れを生じ
てしまい、その結実装置の信頼性が低下するという問題
があった。[Problem H to be Solved by the Invention] In the pressure sensor, the pressure to be measured is directly applied to the liquid in the sensor chamber 104, and the pressure may reach 2000 atmospheres in hydraulic equipment or the like. In that case, in the conventional pressure sensor as shown in FIG.
Since the atmosphere is acting on one end and the silicone oil 104 is acting on the other end, the pressure to be measured is directly applied to the plug 111 via the silicone oil 104, which prevents the plug 111 from sticking to the sensor body 105. If this is not done sufficiently, there is a problem in that liquid leakage occurs at the stopper 111, reducing the reliability of the fruiting device.
本発明は上記問題点に鑑みてなされたものであり、封入
液を封止している封止部材にかかる負担を低減すること
により、封入液の液洩れが起きないようにした半導体式
圧力センサを提供することを目的としている。The present invention has been made in view of the above problems, and is a semiconductor pressure sensor that prevents leakage of the filled liquid by reducing the load on the sealing member that seals the filled liquid. is intended to provide.
上記目的を達成するために、本発明の半導体式圧力セン
サにおいては、凹部を有するハウジングと、
前記凹部内に取り付けられ、被検出圧力に応じた電気信
号を発生する半導体圧力検出素子と、前記半導体圧力検
出素子に電気接続され、前記電気信号を外部に伝達する
伝達手段と、前記半導体圧力検出素子の劣化を防ぐ為に
、前記凹部内に封入される封入液と、
前記凹部を塞ぐように形成されたダイヤフラム七、
前記ハウジング内の前記凹部につながる部分に形成され
、前記凹部に前記封入液を封止する封止部材と
を備えた半導体式圧力センサであって、前記封止部材は
、前記封入液と前記被検出圧力の圧力媒体との間に配置
していることを特徴としている。In order to achieve the above object, the semiconductor pressure sensor of the present invention includes: a housing having a recess; a semiconductor pressure detection element that is attached within the recess and generates an electrical signal in accordance with the pressure to be detected; a transmission means that is electrically connected to the pressure detection element and transmits the electric signal to the outside; a liquid sealed in the recess to prevent deterioration of the semiconductor pressure detection element; and formed to close the recess. A semiconductor pressure sensor, comprising: a diaphragm (7) formed in the housing, and a sealing member formed in a portion connected to the recess in the housing to seal the sealed liquid in the recess, the sealing member comprising: It is characterized in that it is disposed between the sealed liquid and the pressure medium having the detected pressure.
〔作用］
上記のように構成された半導体式圧力センサでは、封入
液を封止する封止部材の取付は位置を封入液と圧力媒体
との間としているので、封止部材の封入液側と圧力媒体
側とから同等の圧力が作用することになり、封止部材に
かかる負担が低減される。[Function] In the semiconductor pressure sensor configured as described above, the sealing member for sealing the filled liquid is installed between the filled liquid and the pressure medium, so the sealing member is mounted between the filled liquid side and the pressure medium. The same pressure will be applied from the pressure medium side, and the load on the sealing member will be reduced.
〔実施例］
以下、本発明を図面に示す実施例を用いて説明する。第
１図は、本発明を５０〜２０００気圧の圧力を検出する
高圧型の圧力センサに適用した一実施例である。図にお
いて、３はその一端の凹部内にセンサ感圧部１を有し、
他端部が開口する断面円形の内部空間２を形成する容器
状のハウジング３であり、そのハウジング３の内部空間
２には回路基板４が収納されるが、又、カバ一部材５と
かしめ等により結合固定されている。センサ感圧部１は
、圧力室１ａと、圧力室１ａの開口部を覆って溶接等に
より接合された金属ダイヤフラム１ｂと、圧力室１ａ内
に固定された台座ＩＣに接着され、−主面に図示しない
拡散等による半導体歪ゲージを形成すると共に、他主面
にダイヤフラムを形成するための凹部を形成した半導体
圧力検出素子１ｄとを有し、圧力室１ａには、半導体圧
力検出素子１ｄの劣化を防ぐために、シリコーンオイル
１ｅが封入されている。またハウジング３にはガラス製
絶縁シール６を介して電気的伝達手段であるリード７が
保持され、リード７の一端は半導体圧力検出素子１ｄと
ワイヤ１ｆによりワイヤボンディングされ、接続されて
いる。リード７の他端は内部空間２に突出し、回路基板
４にハンダ付けにより固定されている。尚、ハウジング
３はネジ部８を有しており、各種高圧機器、油圧機器等
において、他部品５０に螺合可能となっている。[Examples] The present invention will be described below using examples shown in the drawings. FIG. 1 shows an embodiment in which the present invention is applied to a high-pressure type pressure sensor that detects pressures of 50 to 2000 atmospheres. In the figure, 3 has a sensor pressure sensitive part 1 in a recessed part at one end,
It is a container-shaped housing 3 that forms an internal space 2 with a circular cross section and is open at the other end, and a circuit board 4 is housed in the internal space 2 of the housing 3, and a cover member 5 and caulking etc. It is bonded and fixed by. The sensor pressure sensitive part 1 is bonded to a pressure chamber 1a, a metal diaphragm 1b that covers the opening of the pressure chamber 1a and is joined by welding or the like, and a pedestal IC fixed in the pressure chamber 1a. A semiconductor pressure sensing element 1d is formed in which a semiconductor strain gauge is formed by diffusion or the like (not shown), and a recessed portion for forming a diaphragm is formed on the other main surface. In order to prevent this, silicone oil 1e is sealed. Further, a lead 7, which is an electrical transmission means, is held in the housing 3 via a glass insulating seal 6, and one end of the lead 7 is connected to the semiconductor pressure detection element 1d by wire bonding with a wire 1f. The other end of the lead 7 protrudes into the internal space 2 and is fixed to the circuit board 4 by soldering. The housing 3 has a threaded portion 8, and can be screwed onto other parts 50 in various high-pressure equipment, hydraulic equipment, etc.
又、０リング９はハウジング３と他部品５０とを゛シー
ルするためのものである。Further, the O-ring 9 is for sealing the housing 3 and other parts 50.
回路基板４にはリード線ｌＯがハンダ付けにより保持さ
れ、回路基板４は水分、チリ等の汚染から保護するため
に、その周囲でシリコーンゲル１１がポツティングされ
ている。カバ一部材５は一端がハウジング３の内部空間
２内に挿入され、ハウジング３の端部１２がカバ一部材
５の端部外側面にかしめにより締結されることにより、
カバー部材５とハウジング３とは固定されている。また
、カバ一部材５には樹脂製被膜１３によって覆われたリ
ード線１４がエポキシ樹脂１５によってポツティングさ
れており、その一端はリード線１０とハンダ付けにより
固定されている。Lead wires 10 are held on the circuit board 4 by soldering, and silicone gel 11 is potted around the circuit board 4 to protect it from contamination such as moisture and dust. One end of the cover member 5 is inserted into the internal space 2 of the housing 3, and the end 12 of the housing 3 is fastened to the outer surface of the end of the cover member 5 by caulking.
The cover member 5 and the housing 3 are fixed. Further, a lead wire 14 covered with a resin film 13 is potted in the cover member 5 with epoxy resin 15, and one end of the lead wire 14 is fixed to the lead wire 10 by soldering.
鋼等より成る球形の鋼球バルブ１６は、シリコーンオイ
ル１ｅを封止するためのもので、ネジ１７によって圧接
固定されており、ネジ１７の鋼球バルブ１６と接する面
と反対の面は、ダイヤフラム１ｂと同様に圧力媒体と接
している。A spherical steel ball valve 16 made of steel or the like is for sealing the silicone oil 1e, and is fixed by pressure by a screw 17, and the surface of the screw 17 opposite to the surface in contact with the steel ball valve 16 is a diaphragm. Like 1b, it is in contact with the pressure medium.
上記のように構成された第１実施例の半導体式圧力セン
サによれば、シリコーンオイルｌｅを封止している鋼球
バルブ１６及びネジ１７が、圧力媒体側から受ける圧力
Ｐ（矢印Ｂ）と、シリコーンオイル側ｅ側から受ける圧
力Ｐ（矢印Ａ）とは等しいので、封止部材１６及びネジ
１７の圧力媒体側とシリコーンオイル側の圧力差はほと
んど無く、ダイヤフラム１ｂに数百気圧の圧力がかかっ
た場合でも、鋼球バルブ１６とネジ１７は同様に矢印Ｂ
側の圧力媒体から数百気圧の圧力を受けるので、シリコ
ーンオイル１ｅが外部に洩れることがなく、センサとし
ての信頼性が向上する。According to the semiconductor pressure sensor of the first embodiment configured as described above, the steel ball valve 16 and the screw 17 that seal the silicone oil le react with the pressure P (arrow B) received from the pressure medium side. , is equal to the pressure P (arrow A) received from the silicone oil side e side, so there is almost no pressure difference between the pressure medium side and the silicone oil side of the sealing member 16 and screw 17, and a pressure of several hundred atmospheres is applied to the diaphragm 1b. Even if the steel ball valve 16 and screw 17 are
Since the silicone oil 1e receives a pressure of several hundred atmospheres from the pressure medium on the side, the silicone oil 1e does not leak to the outside, and the reliability as a sensor is improved.
次に本発明の第２実施例を第２図を用いて説明する。尚
、第１実施例と同一構成の要素は第１実施例と同一の符
号を付して説明する。この第２実施例は、ハウジング１
８の形状及び封止部材１９とネジ２０の取付は位置が異
なることを除けば、基本的に上記第１実施例と同様であ
る。Next, a second embodiment of the present invention will be described with reference to FIG. Note that elements having the same configuration as in the first embodiment will be described with the same reference numerals as in the first embodiment. In this second embodiment, the housing 1
The shape of the sealing member 8 and the attachment of the sealing member 19 and the screw 20 are basically the same as in the first embodiment, except that the positions of the sealing member 19 and the screw 20 are different.
鋼球バルブ１９とネジ２０が、ネジ部８のところに取付
けられ、シリコーンオイル１ｅと圧力媒体との間に位置
する。ハウジング１８が有するネジ部８と他部品５０と
のすき間には圧力媒体が介在しており、０リング９によ
ってシールされている。A steel ball valve 19 and a screw 20 are installed at the threaded part 8 and are located between the silicone oil 1e and the pressure medium. A pressure medium is present in the gap between the threaded portion 8 of the housing 18 and the other component 50, and the gap is sealed by an O-ring 9.
上記第２実施例の半導体式圧力センサによれば、上記第
１実施例と同様に、シリコーンオイル１ｅを封止してい
る封止部材１９及びネジ２０の圧力媒体側とシリコーン
オイル側の圧力差はほとんど無く、ダイヤフラムｌｂに
数百気圧の圧力がかかった場合でも、シリコーンオイル
１ｅを介して封止部材１９及びネジ２０にかかる圧力と
、圧力媒体から鋼球バルブ１９及びネジ２０が受ける圧
力は等しいので、鋼球バルブ１９及びネジ２０の圧力媒
体側とシリコーンオイル側の圧力差は無く、従ってシリ
コーンオイル１ｅが外部に洩れる心配が無くなる。また
、鋼球バルブ１９とネジ２０の取付は位置をネジ部８の
ところに配置したため、第１実施例においてネジ１７よ
り突出した分だけセンサ全体の大きさを小さくできる。According to the semiconductor pressure sensor of the second embodiment, as in the first embodiment, there is a pressure difference between the pressure medium side and the silicone oil side of the sealing member 19 and the screw 20 that seal the silicone oil 1e. Even if a pressure of several hundred atmospheres is applied to the diaphragm lb, the pressure applied to the sealing member 19 and the screw 20 via the silicone oil 1e and the pressure applied to the steel ball valve 19 and the screw 20 from the pressure medium are Since they are equal, there is no pressure difference between the pressure medium side and the silicone oil side of the steel ball valve 19 and the screw 20, and therefore there is no fear that the silicone oil 1e will leak to the outside. Further, since the steel ball valve 19 and the screw 20 are attached to the screw portion 8, the size of the entire sensor can be reduced by the amount of the portion that protrudes from the screw 17 in the first embodiment.
尚、上記第１、第２実施例においては、シリコーンオイ
ル１ｅを封止するため、鋼球バルブ１６゜１９をネジ１
７．２０で押圧固定したが、鋼球バルブとネジの代りに
先端が円錐状のネジやエキスパンダ（商品名）等を用い
て封止するようにしても良い。In the first and second embodiments described above, in order to seal the silicone oil 1e, the steel ball valve 16° 19 is attached to the screw 1.
Although the steel ball valve and screw were fixed by pressing in 7.20, a screw with a conical tip, an expander (trade name), or the like may be used for sealing.
また、鋼球バルブ１６．１９及びネジ１７．２０の取付
は位置は上記第１、第２実施例に示した位置に限られず
に、圧力媒体とシリコーンオイルｌｅ０間にあれば良い
。Further, the mounting positions of the steel ball valve 16.19 and the screw 17.20 are not limited to the positions shown in the first and second embodiments, but may be any position between the pressure medium and the silicone oil le0.
本発明は、以上説明したように、封入液を封止している
封止部材が、封入液と被検出圧力の圧力媒体との間に配
置されるように構成しているので、封入液が洩れる心配
がなく、信顛性の高い半導体式圧力センサを得ることが
できるという優れた効果を奏する。As explained above, the present invention is configured such that the sealing member sealing the filled liquid is disposed between the filled liquid and the pressure medium of the detected pressure, so that the sealed liquid is sealed. This provides an excellent effect in that a highly reliable semiconductor pressure sensor can be obtained without fear of leakage.
【図面の簡単な説明】
第１図は本発明の第１実施例を示す縦断面図、第２図は
本発明の第２実施例を示す縦断面図、第３図は従来例を
示す縦断面図である。
■・・・センサ感圧部、Ｉａ・・・圧力室、ｌｂ・・・
ダイヤフラム、ｌｃ・・・台座、ｌｄ・・・半導体圧力
検出素子、ｌｅ・・・シリコーンオイル、１「・・・ワ
イヤ、２・・・内部空間、３．１８・・・ハウジング、
４・・・回路基板部、５・・・カバ一部材、６・・・ガ
ラス製絶縁シール。
７・・・リード、８・・・ネジ部、９・・・０リング、
１０・・・リード線、１１・・・シリコーンゲル、１２
・・・ハウジングの端部、１３・・・樹脂製被膜、１４
・・・リード線。
１５・・・エポキシ樹脂、１６．１９・・・鋼球バルブ
。
１７．２０・・・ネジ。
代理人弁理士 岡 部 隆
第２図[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a longitudinal sectional view showing a first embodiment of the present invention, Fig. 2 is a longitudinal sectional view showing a second embodiment of the invention, and Fig. 3 is a longitudinal sectional view showing a conventional example. It is a front view. ■...Sensor pressure sensitive part, Ia...Pressure chamber, lb...
diaphragm, lc... pedestal, ld... semiconductor pressure detection element, le... silicone oil, 1... wire, 2... internal space, 3.18... housing,
4... Circuit board part, 5... Cover member, 6... Glass insulation seal. 7...Lead, 8...Threaded part, 9...0 ring,
10...Lead wire, 11...Silicone gel, 12
...End of housing, 13...Resin coating, 14
···Lead. 15... Epoxy resin, 16.19... Steel ball valve. 17.20...Screw. Representative Patent Attorney Takashi Okabe Figure 2
Claims (3)
号を発生する半導体圧力検出素子と、前記半導体圧力検
出素子に電気接続され、前記電気信号を外部に伝達する
伝達手段と、 前記半導体圧力検出素子の劣化を防ぐ為に、前記凹部内
に封入される封入液と、 前記凹部を塞ぐように形成されたダイヤフラムと、 前記ハウジング内の前記凹部につながる部分に形成され
、前記凹部に前記封入液を封止する封止部材と を備えた半導体式圧力センサであって、 前記封止部材は、前記封入液と前記被検出圧力の圧力媒
体との間に配置していることを特徴とする半導体式圧力
センサ。(1) A housing having a recessed portion, a semiconductor pressure sensing element installed in the recessed portion and generating an electric signal according to the pressure to be detected, and electrically connected to the semiconductor pressure sensing element and transmitting the electric signal to the outside. a liquid sealed in the recess to prevent deterioration of the semiconductor pressure sensing element; a diaphragm formed to close the recess; and a portion of the housing connected to the recess. and a sealing member that seals the filled liquid in the recess, the sealing member being disposed between the filled liquid and the pressure medium having the detected pressure. A semiconductor pressure sensor characterized by:
の取付け位置に配置することを特徴とした請求項１記載
の半導体式圧力センサ。(2) The semiconductor pressure sensor according to claim 1, wherein the sealing member is arranged at a position where it is attached to other parts via the pressure medium.
０気圧の圧力を検出する請求項１又は請求項２記載の半
導体式圧力センサ。(3) The semiconductor pressure sensor has a pressure of 50 atm to 200 atm.
The semiconductor pressure sensor according to claim 1 or 2, which detects a pressure of 0 atmospheres.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63075552A JPH0820326B2 (en) | 1988-03-29 | 1988-03-29 | Semiconductor pressure sensor |
| US07/316,647 US5000047A (en) | 1988-03-29 | 1989-02-28 | Pressure sensor |
| DE3908855A DE3908855A1 (en) | 1988-03-29 | 1989-03-17 | PRESSURE SENSOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63075552A JPH0820326B2 (en) | 1988-03-29 | 1988-03-29 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01248033A true JPH01248033A (en) | 1989-10-03 |
| JPH0820326B2 JPH0820326B2 (en) | 1996-03-04 |
Family
ID=13579463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63075552A Expired - Fee Related JPH0820326B2 (en) | 1988-03-29 | 1988-03-29 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0820326B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5565629A (en) * | 1992-12-11 | 1996-10-15 | Nippondenso Co., Ltd. | Semiconductor-type pressure sensor with isolation diaphragm with flat portion between corrugations |
| KR20040024324A (en) * | 2002-09-13 | 2004-03-20 | 주식회사 케이이씨 | Pressure sensor package |
| JP2020034305A (en) * | 2018-08-27 | 2020-03-05 | 横河電機株式会社 | Field equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4563903A (en) * | 1983-04-13 | 1986-01-14 | Ermeto Armaturen Gmbh | Pressure sensor |
-
1988
- 1988-03-29 JP JP63075552A patent/JPH0820326B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4563903A (en) * | 1983-04-13 | 1986-01-14 | Ermeto Armaturen Gmbh | Pressure sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5565629A (en) * | 1992-12-11 | 1996-10-15 | Nippondenso Co., Ltd. | Semiconductor-type pressure sensor with isolation diaphragm with flat portion between corrugations |
| KR20040024324A (en) * | 2002-09-13 | 2004-03-20 | 주식회사 케이이씨 | Pressure sensor package |
| JP2020034305A (en) * | 2018-08-27 | 2020-03-05 | 横河電機株式会社 | Field equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0820326B2 (en) | 1996-03-04 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |