JPH01246902A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve the airtightness of a semiconductor device and to prevent discontinuation of high frequencies by making signal transmission possible by means of electromagnetic field coupling of a slot line and microstrip line. CONSTITUTION:At the time of packaging a semiconductor device, a microstrip line 7 is formed on an insulating base plate 8. The microstrip line 7 is formed at a position corresponding to the 1/4 open end 2a of a slot line 2 on the rear of a dielectric base body 1 and coupled with the slot line 2 by electromagnetic field coupling with, the dielectric base plate 1 in-between. In other words, the strip line 7 is caused to intersect the slot line 2 at a point which is apart from the open end 2a of the slot line 2 by a distance equal to the 1/4 wavelength of a desired frequency at right angles. Moreover, the open end 7a of the strip line 7 exists at a distance which is equal to the 1/4 wavelength from the intersection. Signal transmission is performed by means of the electromagnetic field coupling performed at this intersection. Therefore, the intersection functions as an input-output port.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a semiconductor element or a circuit component including a semiconductor element is mounted on a dielectric substrate.

[Conventional technology]

Conventionally, this type of semiconductor device, as shown in FIG. 4, has a semiconductor element 13, a circuit component 14 including a semiconductor element, etc. mounted on a dielectric substrate 11, and these are covered with a cap 16 and hermetically sealed. It has stopped.

Terminals 17 serving as input/output ports for signals, etc. are passed through holes made in the dielectric substrate 11, sealed with glass 18, and supported on the substrate, and connected to the semiconductor elements 13 and circuit components by bonding wires 15. Connected to 14.

[Problem to be solved by the invention]

In the conventional semiconductor device described above, the input/output port terminal 17
1 through the dielectric substrate 11, it is difficult to maintain airtightness in this part, which causes a decrease in the reliability of the semiconductor device. Furthermore, when this input/output port is connected to another semiconductor device or the like, there is a problem that the contact portion of the input/output port becomes discontinuous in terms of high frequency, and this discontinuity deteriorates the performance of the semiconductor device.

An object of the present invention is to provide a semiconductor device that can improve airtightness and eliminate high-frequency discontinuities.

[Means to solve the problem]

The semiconductor device of the present invention forms a slot line open to 174 wavelengths of a desired frequency on the surface of a dielectric substrate on which semiconductor elements and circuit components are mounted and is sealed in a camp, and also corresponds to the slot line. A microstrip line that is electromagnetically coupled to the slot line is formed on the back side of the dielectric substrate.

[Effect]

In the above-described configuration, signal transmission can be realized by electromagnetic coupling between the slot line and the microstrip line, so that high-frequency discontinuity can be prevented while ensuring airtightness of the semiconductor device.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIGS. 1(a) and 1(b) are a partially cutaway plan view and a vertical cross-sectional view of a first embodiment of the present invention. As shown in the figure, a slot line 2 is formed on a dielectric substrate 1 using a conductive film, and a semiconductor element 3 and a circuit component 4 including the semiconductor element are mounted thereon. These semiconductor elements 3 and circuit components 4 are connected to the slot line 2 by bonding wires 5. Further, both ends of this slot line 2 are configured as open ends 2a having 174 wavelengths of desired frequencies.

In this example, for a frequency of 10 GH2, the dielectric substrate 1 is an alumina substrate with a thickness of 0.635 mm and a dielectric constant of 9.8, and the width of the slot line 2 is 0.08+nm.

The length to the open end 2a is set to 2.4 mm.

Then, a cap 6 is placed on the dielectric substrate 1,
The interior is sealed by fixing the periphery.

When a semiconductor device having this configuration is mounted, it is placed on an insulating substrate 8 on which a microstrip line 7 is formed, as shown in a plan view in FIG. The microstrip line 7 is formed on the back side of the dielectric substrate 1 at a position corresponding to the open end 2a of the slot line 2, and is electromagnetically coupled to the slot line 2 with the dielectric substrate 1 in between. That is, the microstrip line 7 is perpendicular to the slotline 2 and intersects at a point 1/4 wavelength of the desired frequency from the open end 2a of the slotline 2, and the microstrip line 7 intersects the slotline 2 at a point 1/4 wavelength of the desired frequency from the open end 2a, and the microstripline This is an open end 7a of the strip line 7. In this example, the width of the microstrip line 7 is 0.6 mm,
The length is 4.8 mm or more.

According to this configuration, the slot line 2 and the microstrip line 7 of the semiconductor device perform electromagnetic field coupling at their intersection to transmit signals, and function as a human output port. Therefore, the dielectric substrate 1 and the cap 6
There is no need to provide a through hole in the semiconductor device, and the airtightness of the semiconductor device can be improved. Further, since there is no contact portion in the transmission line, there is no high frequency discontinuity, and the performance of the semiconductor device will not be degraded. - Figures 3(a) and 3(b) are a partially cutaway plan view and a vertical sectional view of a second embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals.

In this embodiment, a microstrip line 7 is directly integrated using a conductive film on the back surface of a dielectric substrate 1 on which a slot line 2 is formed, a semiconductor element 32 and a circuit component 4 are mounted, and the cap 6 is sealed. is forming. The specifications of this microstrip line 7 are exactly the same as in the first embodiment.

Therefore, in this example, the slot line 2 on the dielectric surface
is electromagnetically coupled to the microstrip line 7 on the back surface of the dielectric, and it becomes possible to transmit signals between the two. As in the first embodiment, this allows the semiconductor device to be kept airtight and high frequency discontinuity to be prevented.

〔Effect of the invention〕

As explained above, the present invention utilizes electromagnetic coupling between slot lines formed on the surface of a dielectric substrate mounted with semiconductor elements and circuit components and sealed with a cap, and microstrip lines formed on the back surface. Since signal transmission can be realized, it is possible to ensure airtightness of the semiconductor device and improve the reliability of the semiconductor device, and it also has the effect of preventing high-frequency discontinuities in the transmission line and preventing deterioration of the performance of the semiconductor device. .

[Brief explanation of the drawing]

1(a) and 1(b) are a partially cutaway view and a vertical sectional view thereof of a first embodiment of the present invention, and FIG. 2 is a plan view of the semiconductor device of FIG. 1 mounted on an insulating substrate. 3(a) and 3(b) are a partially cutaway view and a vertical sectional view of a second embodiment of the present invention, and FIG. 4 is a vertical sectional view of a conventional semiconductor device. 1... Dielectric substrate, 2... Slot line, 2a
...1/4 open end, 3... Semiconductor element, 4... Circuit component, 5... Bonding wire, 6... Cap, 7... Microstrip line, 7a... Open end , 8... Insulating substrate, 11... Dielectric substrate, 13
... Semiconductor element, 14... Circuit component, 15... Bonding wire, 16... Cap, 17... Input/output terminal. Figure 1

Claims (1)

[Claims] 1. In a semiconductor device in which semiconductor elements and circuit components are mounted on the surface of a dielectric substrate and these are sealed with a cap, a slot line opened at a wavelength of 1/4 of a desired frequency on the surface of the dielectric substrate. What is claimed is: 1. A semiconductor device characterized in that a microstrip line is formed at a position on the back side of a dielectric substrate corresponding to the slot line, and is electromagnetically coupled to the slot line.