JPH01246150A - Formation of ferrite film - Google Patents
Formation of ferrite filmInfo
- Publication number
- JPH01246150A JPH01246150A JP7250888A JP7250888A JPH01246150A JP H01246150 A JPH01246150 A JP H01246150A JP 7250888 A JP7250888 A JP 7250888A JP 7250888 A JP7250888 A JP 7250888A JP H01246150 A JPH01246150 A JP H01246150A
- Authority
- JP
- Japan
- Prior art keywords
- ferrite
- film
- substrate
- plating
- oxidizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 49
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000001590 oxidative effect Effects 0.000 claims abstract description 21
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000001720 carbohydrates Chemical class 0.000 claims abstract description 12
- 229910001448 ferrous ion Inorganic materials 0.000 claims abstract description 11
- 239000007800 oxidant agent Substances 0.000 claims abstract description 7
- 229920002307 Dextran Polymers 0.000 claims abstract description 5
- 229930006000 Sucrose Natural products 0.000 claims abstract description 5
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims abstract description 5
- 235000013681 dietary sucrose Nutrition 0.000 claims abstract description 5
- 229960004793 sucrose Drugs 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 13
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- -1 iron ions Chemical class 0.000 claims description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 abstract description 10
- 230000035699 permeability Effects 0.000 abstract description 5
- 235000010288 sodium nitrite Nutrition 0.000 abstract description 5
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 abstract description 4
- 239000008103 glucose Substances 0.000 abstract description 4
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 abstract 1
- FZWBNHMXJMCXLU-BLAUPYHCSA-N isomaltotriose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@@H](OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O)O1 FZWBNHMXJMCXLU-BLAUPYHCSA-N 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 36
- 239000000243 solution Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000012153 distilled water Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000000346 sugar Nutrition 0.000 description 5
- 150000008163 sugars Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 3
- 239000005695 Ammonium acetate Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 235000019257 ammonium acetate Nutrition 0.000 description 3
- 229940043376 ammonium acetate Drugs 0.000 description 3
- 235000014633 carbohydrates Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229960002089 ferrous chloride Drugs 0.000 description 3
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- WKPSFPXMYGFAQW-UHFFFAOYSA-N iron;hydrate Chemical compound O.[Fe] WKPSFPXMYGFAQW-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910001035 Soft ferrite Inorganic materials 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compounds Of Iron (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、磁気記録媒体、光磁気記録媒体、磁気ヘッド
、磁気光学素子、マイクロ波素子、出歪素子、磁気音響
素子などに広く応用されているスピネル型フェライト膜
の作製におけるフェライトメツキ膜の形成方法に関する
ものである。[Detailed Description of the Invention] Industrial Application Field The present invention is widely applied to magnetic recording media, magneto-optical recording media, magnetic heads, magneto-optical elements, microwave elements, distortion elements, magneto-acoustic elements, etc. The present invention relates to a method for forming a ferrite plating film in the production of a spinel type ferrite film.
従来の技術
湿式のフェライト膜の作製方法としては、例えば、特開
昭５９−１１１９２９号公報に示されているように、固
体表面に、金属イオンとして少なくとも第１鉄イオンを
含む水浴液を接触させて、固体表面にＦａＯＨ＋または
これと他の水酸化金属イオンを吸着させ、次いで、吸着
したＦｅＯＨを酸化させることによりＦｅＯＨを得、こ
れが水浴液中の水酸化金属イオンとの間でフェライト結
晶化反応を起こし、これによって固体表面にフェライト
膜を形成する方法がある。Conventional wet ferrite film manufacturing methods include, for example, as disclosed in Japanese Patent Application Laid-Open No. 59-111929, in which a water bath solution containing at least ferrous ions as metal ions is brought into contact with a solid surface. Then, FaOH+ or other hydroxide metal ions are adsorbed onto the solid surface, and then the adsorbed FeOH is oxidized to obtain FeOH, which undergoes a ferrite crystallization reaction with the hydroxide metal ions in the water bath liquid. There is a method in which a ferrite film is formed on the solid surface.
この技術をもとに水溶液中の反応を極力排除して、メツ
キ膜の均質化、あるいは反応速度の向上筒をねらったも
の（特開昭６０−１４０７１３号公報）、固体表面に界
面活性を付与して固体とフェライト膜の密着力の向上な
どを計ったもの（特開昭６１−３０６７４号公報）、あ
るいはフェライト生成速度の向上に関するもの（特開昭
６１−１７９８７７号公報ないし待開昭６１−２２２９
２４号公報）がある。（本発明では、これらの方法をす
べて総称してフェライトメツキという。）フェライトメ
ツキは、膜を形成しようとする固体が前述した水溶液に
対して耐性があるものであれば、何でもよく、さらに、
水溶液を介した反応であるため、温度が比較的低温（水
溶液の沸点以下）でスピネル型フェライト膜を作製でき
るという特徴がある。Based on this technology, we aim to homogenize the plating film or improve the reaction rate by eliminating the reaction in the aqueous solution as much as possible (Japanese Unexamined Patent Publication No. 140713/1983), and impart surface activity to the solid surface. (Japanese Unexamined Patent Publication No. 61-30674), or those related to improving the rate of ferrite production (Japanese Unexamined Patent Publications No. 179877/1983 or 1983-1983). 2229
Publication No. 24). (In the present invention, all of these methods are collectively referred to as ferrite plating.) Ferrite plating may be any method as long as the solid on which the film is to be formed is resistant to the above-mentioned aqueous solution.
Since the reaction is carried out through an aqueous solution, it is characterized in that a spinel-type ferrite film can be produced at a relatively low temperature (below the boiling point of the aqueous solution).
そのため、他のフェライト膜作製技術に比べて、固体の
限定範囲が小さい。Therefore, compared to other ferrite film manufacturing techniques, the limited range of solids is small.
発明が解決しようとする課題
しかし、前述したように、これまで膜の均質性、あるい
は膜の生成速度等に種々の改善が提案されているが、得
られる膜の磁気特性については前述した全ての方式とも
不十分であった。つまり、スピネル型フェライトとして
の十分な磁気特性、特にソフトとしての特性が得られて
いない。そのため、各種電子部品等への応用・適用等に
関して大きな課題があった。Problems to be Solved by the Invention However, as mentioned above, although various improvements have been proposed in the homogeneity of the film or the production speed of the film, the magnetic properties of the resulting film cannot be improved by all of the above-mentioned methods. Both methods were inadequate. In other words, sufficient magnetic properties as a spinel type ferrite, especially soft properties, are not obtained. Therefore, there have been major issues regarding its application to various electronic components, etc.
フェライト膜の保磁力については、例えば、金属表面技
術ＶＯＬ、３８ 、 ｌｉ９ 、１９８７ Ｐ、Ｉ
ＶＣ示すれているように約１０ｏｏｅ以上であり、マグ
ネタイトもＭｎおよびＺｎを含んだ（ＭｎＺｎ系）フェ
ライトもほぼ同様の大きさである。Regarding the coercive force of ferrite film, for example, Metal Surface Technology VOL, 38, li9, 1987 P, I
As shown in VC, it is approximately 10 oooe or more, and magnetite and ferrite containing Mn and Zn (MnZn type) are approximately the same size.
課題を解決するための手段
以上の課題を解決するために本発明は、金属イオンとし
て少なくとも第１鉄イオン、第１鉄イオンを酸化するた
めの酸化剤、さらに糖類を少なくとも含んだ液を非酸化
性雰囲気で、基体に接触させて基体の表面上にフェライ
ト膜を堆積させる方法としたものである。Means for Solving the Problems In order to solve the problems above, the present invention provides a method for non-oxidizing a liquid containing at least ferrous ions as metal ions, an oxidizing agent for oxidizing the ferrous ions, and at least saccharides. This method involves depositing a ferrite film on the surface of a substrate by bringing it into contact with the substrate in a neutral atmosphere.
作用
前述した方法によって、つまり、フェライトメツキにお
いて、金属イオンとして少なくとも第１鉄イオン、第１
鉄イオンを酸化するための酸化剤に加えて、新たに糖類
を少なくとも含んだ液を、非酸化性雰囲気で、基体に接
触させて基体の表面上にフェライト膜を堆積ζせること
によって、これまでにないソフト化した磁気特性（低い
保磁力、高い透磁率）を有するフェライト膜が形成でき
る。Effect: By the method described above, that is, in ferrite plating, at least ferrous ions and ferrous ions are added as metal ions.
In addition to an oxidizing agent for oxidizing iron ions, a liquid containing at least sugars is brought into contact with the substrate in a non-oxidizing atmosphere to deposit a ferrite film on the surface of the substrate. It is possible to form a ferrite film with soft magnetic properties (low coercive force, high magnetic permeability) that are not found anywhere else in the world.
実施例 以下、本発明の実施例について説明する。Example Examples of the present invention will be described below.
本発明のフェライトメツキ膜の形成方法の基本的な部分
については、前述した公知の方法と大部分同じである。The basic part of the method for forming the ferrite plating film of the present invention is mostly the same as the known method described above.
しかし、本発明では、フェライトメツキ反応時に、糖類
を含んだ液を基体に供給するため、これまでの方法に比
べると比較的保磁力の小さい（高い透磁率）フェライト
膜が得られるというこれまでに認められていない現象（
膜のソフト化）を見出すことができた。現時点ではその
詳細原因はまったく不明である。However, in the present invention, a saccharide-containing liquid is supplied to the substrate during the ferrite plating reaction, so a ferrite film with a relatively small coercive force (high magnetic permeability) can be obtained compared to conventional methods. Unrecognized phenomenon (
(softening of the membrane). At present, the detailed cause is completely unknown.
結果からみて、糖類つ１ｖ炭水化物は、一般弐〇Ｘ Ｈ
２ｙｏｙで示されるが、この炭水化物がフェライトメツ
キ膜中に分散し、取り込まれることによって、糖類を全
く含まないフェライトメツキ膜よりも膜の内部ひずみあ
るいは応力を緩和して磁気特性のソフト化（低い保磁力
、あるいは高い透磁率）に寄与しているのではないかと
思われる。From the results, sugars and 1v carbohydrates are general
2yoy, but by dispersing and incorporating these carbohydrates into the ferrite-plated film, the internal strain or stress of the film is relaxed compared to a ferrite-plated film that does not contain any sugars, resulting in softer magnetic properties (lower retention). It is thought that this may contribute to the magnetic force (or high magnetic permeability).
本発明のフェライトメツキ膜の形成方法の一例を図を用
いて説明する。An example of the method for forming a ferrite plating film of the present invention will be explained with reference to the drawings.
例えば、−例として、現時点で最もよいとされている。For example: - As an example, it is currently considered the best.
種々の改善がなされたスプレースピンコード法をベース
にした方法について説明する。装置の概略図を第１図に
示す。３はフェライトメツキ膜を形成する基板（基体）
であり、４は回転することができる基板３を取り付ける
回転台である。A method based on the spray spin code method with various improvements will be described. A schematic diagram of the apparatus is shown in FIG. 3 is the substrate (substrate) on which the ferrite plating film is formed
4 is a rotary table on which a rotatable substrate 3 is attached.
金属イオンとして少なくとも第１鉄イオン、第１鉄イオ
ンを酸化するための酸化剤、さらに糖類を少なくとも含
んだ液を用いるためメツキ反応時までは極力第１鉄イオ
ンの酸化を防ぐために液は最低２つに分離して準備する
必要がある。そのため、図は２液に分離した場合である
。１および２はメツキ液を基板３に供給するためのノズ
ルである。適当なノズル１または２を選択することによ
って、液を滴下あるいは噴霧状で供給することができる
。５および６は、分離したメツキ液を貯蔵するタンクで
ある。また、図に示すように基板３および回転台４等の
フェライトメツキ反応を行う部分はケースによって仕切
り、非酸化性雰囲気にする。Since a liquid containing at least ferrous ions as metal ions, an oxidizing agent for oxidizing the ferrous ions, and at least saccharides is used, the liquid should be at least 2.0 mol of iron to prevent oxidation of ferrous ions as much as possible until the plating reaction. It needs to be separated and prepared. Therefore, the figure shows the case where the liquid is separated into two liquids. 1 and 2 are nozzles for supplying plating liquid to the substrate 3. By selecting an appropriate nozzle 1 or 2, the liquid can be supplied in drops or in the form of a spray. 5 and 6 are tanks for storing the separated plating liquid. Further, as shown in the figure, the parts where the ferrite plating reaction is performed, such as the substrate 3 and the rotary table 4, are partitioned off by a case to create a non-oxidizing atmosphere.
このような装置を用い、装置に非酸化性ガス（例えば、
Ｎ２ガス）を送り、ケース内を非酸化性雰囲気にする。Using such a device, the device is supplied with a non-oxidizing gas (e.g.
(N2 gas) to create a non-oxidizing atmosphere inside the case.
タンク６には、例えば酸化剤として亜硝酸ナトリウムＮ
ａＮｏ。を用い、さらに緩衝剤として酢酸アンモニウ
ムＣＨ３ＧＯＯＮＨ４をいれた水溶液（酸化液）を入れ
、タンク６に少なくとも第１鉄イオンを含む水溶液（反
応液）を入れる。酸化液あるいは反応液にさらに糖類を
溶解する。これらの液をポンプ等で、装置内にノズル１
および２全通して供給する。基板３には、回転台４によ
り回転した状態で容赦が供給される。回転台４は、ヒー
ター等により６０〜１００℃に加熱する。このようにし
て、基板３上でフェライト結晶化反応を行わせて、基板
にフェライトメツキ膜を形成する。Tank 6 contains, for example, sodium nitrite N as an oxidizing agent.
aNo. An aqueous solution (oxidizing solution) containing ammonium acetate CH3GOONH4 as a buffer is added to the tank 6, and an aqueous solution (reaction solution) containing at least ferrous ions is put into the tank 6. Sugars are further dissolved in the oxidation solution or reaction solution. These liquids are pumped into the device through nozzle 1.
and 2 supplied throughout. The substrate 3 is supplied with tolerance in a rotated state by a rotating table 4. The turntable 4 is heated to 60 to 100°C using a heater or the like. In this way, a ferrite crystallization reaction is carried out on the substrate 3 to form a ferrite plating film on the substrate.
糖類としては、一般弐ＣｘＨ２ｙＯｙで表されるもので
あればよい。たとえば、ぶどう糖Ｃ０６へ、０６）、カ
ラクトース、マンノース、フルクトース、マルトース、
サッカロース（Ｃ１２Ｈ２２０１１）、ラクトース、ク
リコーゲン、デキストラン（Ｃ６Ｈ１ｏＯ５）ｎ、など
がある。As the saccharide, any one generally represented by 2CxH2yOy may be used. For example, glucose C06, 06), calactose, mannose, fructose, maltose,
Examples include saccharose (C12H22011), lactose, clicogen, dextran (C6H1oO5)n, etc.
次に本発明の更に具体的な実施例について説明する。Next, more specific embodiments of the present invention will be described.
（実施例１）
脱気した（あらかじめ窒素ガスを通じた）蒸留水２１に
塩化第１鉄４ｆ、塩化ニッケル４ノおよび塩化亜鉛５Ｑ
ＩＩ１ｇをそれぞれ溶解した水溶液（反応液）を作製し
た。さらに別の溶液として、蒸留水２１に亜硝酸ナトリ
ウム１ノと酢酸アンモニウム１ｏｙ、サッカロース６０
ノを溶解した水溶液（酸化液）を作製した。(Example 1) 4F of ferrous chloride, 4Q of nickel chloride, and 5Q of zinc chloride were added to 21 degassed (passed with nitrogen gas in advance) distilled water.
Aqueous solutions (reaction solutions) were prepared in which 1 g of II was dissolved in each. Another solution is 1 oz of sodium nitrite, 1 oz of ammonium acetate, 60 saccharose in 2 parts of distilled water.
An aqueous solution (oxidizing solution) was prepared by dissolving .
これらの溶液を用いて、第１図に示すような装置でフェ
ライトメツキを行った。装置には窒素ガスを毎分１．５
１で送り込み非酸化性雰囲気を得、回転台をヒータによ
！１１８０℃一定にした。回転台は毎分３００回転の速
度で回転させた。各溶液は装置上部にある２つのスプレ
ーノズルによって、別々に基板表面にそれぞれ毎分９５
ｒｎｌの流量で噴霧状にして、供給した。約２０分間メ
ツキを行った。メツキに用いた基板はアルミナ基板であ
る。Using these solutions, ferrite plating was performed using an apparatus as shown in FIG. The device is supplied with nitrogen gas at a rate of 1.5 per minute.
1 to obtain a non-oxidizing atmosphere and use the rotary table as a heater! The temperature was kept constant at 1180°C. The turntable was rotated at a speed of 300 revolutions per minute. Each solution was sprayed separately onto the substrate surface by two spray nozzles at the top of the device, each spraying at a rate of 95 minutes per minute.
It was supplied in atomized form at a flow rate of rnl. The plating was performed for about 20 minutes. The substrate used for plating is an alumina substrate.
メツキ後のフェライトメツキ膜の厚みは１，２μｍであ
った。The thickness of the ferrite plating film after plating was 1.2 μm.
比較のために、酸化液にサッカロースδＯｙ−を含まな
い酸化液を作製し、同様にフェライトメツキを行った。For comparison, an oxidizing solution containing no saccharose δOy was prepared and ferrite plating was performed in the same manner.
得られたフェライトメツキ膜の膜厚は１．２μｍであっ
た。The thickness of the obtained ferrite plating film was 1.2 μm.
以上、２種類のフェライトメツキ膜の磁気特性を測定し
たところ、本発明の方法で作製した膜の保磁力は比較の
ために作製した膜の保磁力の約Ａの大きさであった。As described above, when the magnetic properties of the two types of ferrite plating films were measured, the coercive force of the film produced by the method of the present invention was about A larger than the coercive force of the film produced for comparison.
（実施例２）
脱気した（あらかじめ窒素ガスを通じた）蒸留水２ｇに
塩化第１鉄４ノを溶解して反応液を作製した。ざらに、
蒸留水２１に亜硝酸ナトリウム１ｙ−と酢酸アンモニウ
ム１Ｑｆ？、ぶどう糖２０ノを溶解して、酸化液を作製
した。(Example 2) A reaction solution was prepared by dissolving 4 g of ferrous chloride in 2 g of degassed (passed with nitrogen gas in advance) distilled water. Roughly,
Distilled water 21, sodium nitrite 1y- and ammonium acetate 1Qf? An oxidizing solution was prepared by dissolving 20 grams of glucose.
これらの＠液を用いて、実施例１と同様にフェライトメ
ツキを行った。用いた基板はアルミナである。得られた
フェライトメツキ膜の膜厚は約１．２μｍであった。Ferrite plating was performed in the same manner as in Example 1 using these @ solutions. The substrate used was alumina. The thickness of the obtained ferrite plating film was about 1.2 μm.
比較のために、酸化液にぶどう糖５０！？を含まない酸
化液を作製し、同様にフェライトメツキを行った。得ら
れたフェライトメツキ膜の膜厚は１．２７ノｍであった
。For comparison, 50% glucose in the oxidizing solution! ? An oxidizing solution containing no was prepared and ferrite plating was performed in the same manner. The thickness of the obtained ferrite plating film was 1.27 nm.
以上、２種類のフェライトメツキ膜の磁気特性を測定し
たところ、本発明の方法で作製した膜の保磁力は約５０
００であり、比較のために作製した膜の保磁力は約１０
００ａ であった。この場合も実施例１と同様に本発
明の方法では保磁力は約ＩＡの大きさになった。As described above, when the magnetic properties of two types of ferrite plating films were measured, the coercive force of the film produced by the method of the present invention was approximately 50.
00, and the coercive force of the film prepared for comparison was approximately 10
It was 00a. In this case, as in Example 1, the method of the present invention resulted in a coercive force of approximately IA.
（実施例３）
脱気した（あらかじめ窒素ガスを通じた）蒸留水２Ｅに
塩化第１鉄４！？と塩化マンガン４ＳＰおよび塩化亜鉛
ｓｏｍｇをそれぞれ溶解して反応液を作製した。さらに
、蒸留水２ｅに亜硝酸ナトリウム１ｆ？ト酢酸アンモニ
ウム１ｏｙ−、デキストラン１ｙ−を溶解して酸化液を
作製した。(Example 3) Add 4 parts of ferrous chloride to 2 parts of degassed (passed with nitrogen gas in advance) distilled water! ? A reaction solution was prepared by dissolving manganese chloride 4SP and zinc chloride somg, respectively. Furthermore, 1f of sodium nitrite in 2e of distilled water? An oxidizing solution was prepared by dissolving ammonium toacetate 1oy- and dextran 1y-.
これらの溶液を用いて、実施例１と同様にフェライトメ
ツキを行った。用いた基板はアルミナ基板である。Ferrite plating was performed in the same manner as in Example 1 using these solutions. The substrate used was an alumina substrate.
得られたフェライトメツキ膜の膜厚は約１，１μｍであ
った。The thickness of the obtained ferrite plating film was about 1.1 μm.
比較のために、酸化液にデキストランを含丑ない酸化液
を作製し、同様にフェライトメツキを行った。得られた
フェライトメツキ膜の膜厚は約１．２μｍであった。For comparison, an oxidizing solution containing no dextran was prepared and ferrite plating was performed in the same manner. The thickness of the obtained ferrite plating film was about 1.2 μm.
以上、２種類のフェライトメツキ膜の磁気特性を測定し
たところ１本発明の方法で作製した膜の保磁力は比較の
ために作製した膜の保磁力の約Ｉ乙の大きさであった。As described above, the magnetic properties of the two types of ferrite plating films were measured, and the coercive force of the film produced by the method of the present invention was approximately I2 larger than the coercive force of the film produced for comparison.
発明の効果
本発明によって、前述したように、フェライトメツキに
おいて、メツキ液に糖類（炭水化物）を含ませることに
よって、含１ない場合に比べて、非常に小さい保磁力（
高い透磁率）のフェライトメツキ膜を作製することがで
き、各種電子部品等への適用に十分なソフトフェライト
膜を得ることができる。Effects of the Invention According to the present invention, as described above, in ferrite plating, by including sugars (carbohydrates) in the plating solution, a very small coercive force (
A ferrite plating film with high magnetic permeability) can be produced, and a soft ferrite film sufficient for application to various electronic components can be obtained.
第１図は、本発明の実施例に用いたフェライＩ・メツキ
膜の形成装置の概略（８）である。
１．２・・・・・ノズノペ３・・・・・・基板、４・・
・・・・回転台、５．６・・・・・・タンク。FIG. 1 is a schematic diagram (8) of an apparatus for forming a Ferrite I plating film used in an example of the present invention. 1.2... Nozunope 3... Board, 4...
... Rotating table, 5.6 ... Tank.
Claims (3)
鉄イオンを酸化するための酸化剤、さらに糖類を少なく
とも含んだ液を非酸化性雰囲気で、基体に接触させて基
体の表面上にフェライト膜を堆積させることを特徴とす
るフェライト膜の形成方法。(1) As metal ions, at least ferrous ions,
A method for forming a ferrite film, which comprises depositing a ferrite film on the surface of a substrate by contacting the substrate with a liquid containing at least an oxidizing agent for oxidizing iron ions and saccharides in a non-oxidizing atmosphere.
イト膜の形成方法。(2) The method for forming a ferrite film according to claim 1, wherein the saccharide is saccharose.
イト膜の形成方法。(3) The method for forming a ferrite film according to claim 1, wherein the saccharide is dextran.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7250888A JPH01246150A (en) | 1988-03-25 | 1988-03-25 | Formation of ferrite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7250888A JPH01246150A (en) | 1988-03-25 | 1988-03-25 | Formation of ferrite film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01246150A true JPH01246150A (en) | 1989-10-02 |
Family
ID=13491353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7250888A Pending JPH01246150A (en) | 1988-03-25 | 1988-03-25 | Formation of ferrite film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01246150A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885388A (en) * | 1987-09-18 | 1989-12-05 | Bayer Aktiengesellschaft | 2-methyl-4-fluoro-phenols and their preparation |
| JP2007123598A (en) * | 2005-10-28 | 2007-05-17 | Rikogaku Shinkokai | Water solution for ferrite film deposition, producing method of ferrite film, and ferrite film |
| WO2008081917A1 (en) * | 2007-01-05 | 2008-07-10 | Tokyo Institute Of Technology | Spherical ferrite nanoparticle and method for production thereof |
-
1988
- 1988-03-25 JP JP7250888A patent/JPH01246150A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885388A (en) * | 1987-09-18 | 1989-12-05 | Bayer Aktiengesellschaft | 2-methyl-4-fluoro-phenols and their preparation |
| JP2007123598A (en) * | 2005-10-28 | 2007-05-17 | Rikogaku Shinkokai | Water solution for ferrite film deposition, producing method of ferrite film, and ferrite film |
| JP4631056B2 (en) * | 2005-10-28 | 2011-02-16 | 国立大学法人東京工業大学 | Aqueous solution for forming ferrite film, method for producing ferrite film, and ferrite film |
| WO2008081917A1 (en) * | 2007-01-05 | 2008-07-10 | Tokyo Institute Of Technology | Spherical ferrite nanoparticle and method for production thereof |
| JP2008201666A (en) * | 2007-01-05 | 2008-09-04 | Tokyo Institute Of Technology | Spherical ferrite nanoparticle and production method thereof |
| US8394413B2 (en) | 2007-01-05 | 2013-03-12 | Tokyo Institute Of Technology | Spherical ferrite nanoparticles and method for producing the same |
| US8399022B2 (en) | 2007-01-05 | 2013-03-19 | Tokyo Institute Of Technology | Spherical ferrite nanoparticles and method for producing the same |
| JP2014012632A (en) * | 2007-01-05 | 2014-01-23 | Tokyo Institute Of Technology | Spherical ferrite nanoparticle and production method of the same |
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