JPH01241877A - Substrate for electronic device - Google Patents
Substrate for electronic deviceInfo
- Publication number
- JPH01241877A JPH01241877A JP63070598A JP7059888A JPH01241877A JP H01241877 A JPH01241877 A JP H01241877A JP 63070598 A JP63070598 A JP 63070598A JP 7059888 A JP7059888 A JP 7059888A JP H01241877 A JPH01241877 A JP H01241877A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- bix
- single crystal
- ycuzodelta
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 25
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- -1 magnesium aluminate Chemical class 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910026161 MgAl2O4 Inorganic materials 0.000 abstract description 16
- 239000002887 superconductor Substances 0.000 abstract description 10
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 101100326791 Caenorhabditis elegans cap-2 gene Proteins 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Local Oxidation Of Silicon (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体層と絶縁体層、及び超伝導体層とからな
る電子デバイス用基板に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a substrate for electronic devices comprising a semiconductor layer, an insulator layer, and a superconductor layer.
（従来の技術）
Ｂｉ−８ｒ−Ｃａ−Ｃｕ−０系の酸化物は組成に依って
は液体窒素温度以上の臨界温度Ｔ。を有する高温超伝導
材料である。従来超伝導材料として用いられているＮｂ
系合金はその冷却に高価な液体ヘリウムを必要とするの
に対し、Ｂ１−８ｒ−Ｃａ−Ｃｕ−０系酸化物は安価の
液体窒素を用いることができ、工業的実用化材料として
注目されている。(Prior Art) Bi-8r-Ca-Cu-0-based oxides have a critical temperature T that is higher than the liquid nitrogen temperature depending on the composition. It is a high-temperature superconducting material with Nb, conventionally used as a superconducting material
While the B1-8r-Ca-Cu-0 based alloy requires expensive liquid helium for cooling, the B1-8r-Ca-Cu-0 based oxide can use inexpensive liquid nitrogen and is attracting attention as a material for industrial practical use. There is.
高温超伝導材料の電子デバイスへの応用には薄膜デバイ
スが検討されており、Ｂ１−８ｒ−Ｃａ−Ｃｕ−０系材
料の薄膜化が進められている。現在の電子デバイスの主
流はシリコン半導体である。従ってＢ１−８ｒ−Ｃａ−
Ｃｕ−０系の高温超伝導材料をシリコン単結晶基板上に
形成できれば成熟したシリコン半導体技術を用いて高機
能、高集積の超伝導デバイスを開発することが可能であ
る。しかしながらＢ１−８ｒ−Ｃａ−Ｃｕ−０系高温超
伝導材料のシリコン基板上への薄膜形成の公知例は未だ
ない。Thin film devices are being considered for the application of high temperature superconducting materials to electronic devices, and efforts are being made to make B1-8r-Ca-Cu-0-based materials thinner. Silicon semiconductors are the mainstream of current electronic devices. Therefore, B1-8r-Ca-
If a Cu-0-based high-temperature superconducting material can be formed on a silicon single crystal substrate, it will be possible to develop a highly functional, highly integrated superconducting device using mature silicon semiconductor technology. However, there is still no known example of forming a thin film of B1-8r-Ca-Cu-0 based high temperature superconducting material on a silicon substrate.
（発明が解決しようとする課題）
前述の如く、シリコン基板上には、種々の電子デバイス
が作製され実用になっており、超伝導体が薄膜状で作製
できれば、これらのデバイスと共存させて使用でき実用
上の価値は極めて高い。しかしながら、周知のように、
シリコン基板上に酸化物の薄膜を作製すると、シリコン
基板と酸化物との熱膨張差によるクラックの発生及び剥
離の問題がある。(Problems to be Solved by the Invention) As mentioned above, various electronic devices have been fabricated on silicon substrates and are in practical use, and if a superconductor can be fabricated in the form of a thin film, it can be used in coexistence with these devices. Its practical value is extremely high. However, as is well known,
When a thin oxide film is formed on a silicon substrate, there are problems of cracking and peeling due to the difference in thermal expansion between the silicon substrate and the oxide.
また、シリコン上に形成した半導体デバイス同志の配線
を超伝導材料によって行うことを考えると、シリコン基
板と超伝導配線層との間の絶縁を行う必要があるが、こ
れまでその方法は明らかにされていなかった。Furthermore, considering that wiring between semiconductor devices formed on silicon is made of superconducting material, it is necessary to provide insulation between the silicon substrate and the superconducting wiring layer, but a method for this has not yet been clarified. It wasn't.
本発明は上記従来技術の問題を解決するもので、超伝導
体薄膜を具備する電子デバイス用基板を提供することを
目的とする。The present invention solves the problems of the prior art described above, and an object of the present invention is to provide a substrate for an electronic device comprising a superconductor thin film.
（課題を解決するための手段）
すなわち本発明はシリコン単結晶基板上に絶縁体膜が形
成され、該絶縁体膜上に一般式がＢｉｘ（Ｓｒ。(Means for Solving the Problems) That is, in the present invention, an insulating film is formed on a silicon single crystal substrate, and a general formula of Bix(Sr.
Ｃａ）ｙＣｕρ６で表わされ、それぞれの金属元素成分
の組 成 が０．０８≦ｘ／（ｘ ＋ ｙ ＋ ｚ）≦
鉤４１ か つ０．２９≦ｙ／（ｘ ＋ ｙ ＋ ｚ
）≦０．４７かつ１≦Ｓｒ／Ｃａ≦３の範囲内にある超
伝導体酸化物層が形成されていることを特徴とする電子
デバイス用基板である。Ca)yCuρ6, and the composition of each metal element component is 0.08≦x/(x + y + z)≦
Hook 41 and 0.29≦y/(x + y + z
)≦0.47 and 1≦Sr/Ca≦3.
（作用）
シリコン単結晶基板上に形成する絶縁体単結晶膜として
、マグネシウムアルミネートスピネル（ＭｇＡ１２０４
）、マグネシア（ＭｇＯ）が考えられる。この場合、Ｍ
ｇＯは本出願人が提案（特願昭５８−２２９０３３）
シているようにシリコン単結晶基板に直接成長するより
もシリコン基板上に成長したＭｇＡｌ２Ｏ４を介して形
成した方が良質の単結晶膜が形成できる。従って絶縁体
単結晶膜として２層構造のものでも良い。(Function) Magnesium aluminate spinel (MgA1204
) and magnesia (MgO). In this case, M
gO was proposed by the applicant (Japanese Patent Application No. 58-229033)
As shown in Figure 2, it is possible to form a single crystal film of better quality by forming it via MgAl2O4 grown on a silicon substrate than by directly growing it on a silicon single crystal substrate. Therefore, the insulating single crystal film may have a two-layer structure.
また、本出願人はＳｉ基板上に形成したＭｇＡｌ２Ｏ４
エピタキシャル膜は成長後ＭｇＡ１２０４膜を通してＳ
ｉ基板を熱酸化し、ＭｇＡ１□０４／８１０２／８１構
造にすることによってその結晶性を改善できることをす
でに提案（特願昭５６−１０３９６７） している。従
って絶縁体単結晶膜としてＳｉ単結晶基板上に非晶質Ｓ
ｉＯ２を介したような構造のものでも良い。In addition, the applicant has also developed MgAl2O4 formed on a Si substrate.
After the epitaxial film is grown, S is passed through the MgA1204 film.
It has already been proposed (Japanese Patent Application No. 56-103967) that the crystallinity of the i-substrate can be improved by thermally oxidizing the i-substrate into a MgA1□04/8102/81 structure. Therefore, as an insulator single crystal film, amorphous S is formed on a Si single crystal substrate.
It may also have a structure via iO2.
このように良質な結晶性を有する絶縁体単結晶膜上に一
般式がＢｉＸ（Ｓｒ、 Ｃａ）、ＣｕｚＯ６で表わされ
、クラックの発生がなく、臨界温度Ｔ。がバルクセラミ
ックと同等の値を有する高温超伝導体膜を作製すること
ができる。本発明における絶縁体単結晶膜はその熱膨張
係数がＭｇＡｌ２Ｏ４の８．８Ｘ１０−６に−１、Ｍｇ
Ｏの１３．８Ｘ１０−６に−１とＳｉの４．２Ｘ１０−
６に−１よりも大きい。Ｂｉｘ（Ｓｒ、 Ｃａ）、Ｃｕ
ρ６の熱膨張係数は同じ酸化物の高温超伝導材料である
ＹＢａ２Ｃｕ３０゜−８と同等とすると１４〜２５Ｘ１
０−６に一１程度と考えられる。従って、本発明におけ
るＭｇＡｌ２Ｏ４，ＭｇＯ単結晶膜はシリコン基板とＢ
ｉｘ（Ｓｒ、 Ｃａ）ｙＣｕρ６膜との間の熱膨張差に
よって生ずる膜の内部応力を緩和し、クラックの発生を
防ぐ役割を有する。As described above, the general formula is BiX (Sr, Ca), CuzO6 on an insulating single crystal film with good crystallinity, no cracks occur, and the critical temperature T is low. It is possible to fabricate a high-temperature superconductor film having a value equivalent to that of bulk ceramics. The insulator single crystal film in the present invention has a thermal expansion coefficient of 8.8X10-6 of MgAl2O4, -1
13.8X10-6 of O and 4.2X10-1 of Si
greater than -1 to 6. Bix (Sr, Ca), Cu
The thermal expansion coefficient of ρ6 is 14-25X1 if it is equivalent to YBa2Cu30°-8, which is a high-temperature superconducting material made of the same oxide.
It is thought to be about 1 in 0 to 6. Therefore, the MgAl2O4, MgO single crystal film in the present invention is
It has the role of alleviating the internal stress of the film caused by the difference in thermal expansion between the ix(Sr, Ca)yCuρ6 film and preventing the occurrence of cracks.
またシリコン基板上に形成される絶縁体膜が単結晶膜で
あることは、その上に形成されるＢｉｘ（Ｓｒ。Furthermore, the fact that the insulating film formed on the silicon substrate is a single crystal film means that Bix (Sr) formed on it.
Ｃａ）、Ｃｕρ６、超伝導体膜の臨界温度Ｔ。がバルク
のセラミックと同等の値を有するうえに重要な意味をも
つ。高温超伝導体材料の臨界温度Ｔ。は組成敏感な特性
であるので、薄膜の場合にバルクのセラミックと同等の
臨界温度Ｔ。を示すためには基板との相互拡散を防ぐこ
とが重要である。多結晶膜において、粒界は高速拡散径
路であり、その上に膜を形成した場合表面に出た粒界を
通じて相互拡散を起こしやすいことが知られている。従
ってシリコン基板上に形成される絶縁体膜が単結晶膜で
あることは、その上に形成されるＢｉｘ（Ｓｒ、 Ｃａ
）、Ｃｕρ８膜との相互拡散を防ぐ有効な手段である。Ca), Cuρ6, critical temperature T of superconductor film. It has an important value as it has a value equivalent to that of bulk ceramic. Critical temperature T of high temperature superconductor materials. Since is a composition-sensitive property, the critical temperature T in the case of thin films is equivalent to that of bulk ceramics. In order to demonstrate this, it is important to prevent mutual diffusion with the substrate. In polycrystalline films, grain boundaries are high-speed diffusion paths, and it is known that when a film is formed thereon, interdiffusion is likely to occur through the grain boundaries exposed on the surface. Therefore, the fact that the insulator film formed on the silicon substrate is a single crystal film means that the Bix (Sr, Ca
) is an effective means for preventing mutual diffusion with the Cuρ8 film.
さらに、ＭｇＡｌ２Ｏ４の融点２４０８に、 ＭｇＯの
融点３００８にといずれも高く、このことも上記の相互
拡散を防ぐ効果のひとつである。Furthermore, the melting point of MgAl2O4 is 2408, and the melting point of MgO is 3008, both of which are higher, which is also one of the effects of preventing the above-mentioned mutual diffusion.
本発明において高温超伝導膜はＳｉ基板上に形成される
ことから、熟成したＳｉ半導体集積回路技術を用いるこ
とによって高い機能を超伝導デバイスに持たせることが
できる。例えば、超伝導体膜をソース電極とドレイン電
極に用いた電界効果型の超伝導トランジスタや超伝導配
線によるＬＳＩの開発が可能となる等、本発明の波及効
果は甚大である。In the present invention, since the high temperature superconducting film is formed on the Si substrate, the superconducting device can be provided with high functionality by using mature Si semiconductor integrated circuit technology. For example, the ripple effects of the present invention are enormous, such as making it possible to develop field-effect superconducting transistors using superconductor films for source and drain electrodes and LSIs using superconducting wiring.
（実施例１）
面方位が（１００）のＳｉ単結晶基板上にＭｇＡ１２ｏ
４をエピタキシャル成長し、その上にＢｉｘ（Ｓｒ、
Ｃａ）ｙＣｕρ６をスパッタ法において形成した。第１
図（ａ）、 （ｂ）は本実施の説明図で１は（１００）
Ｓｉ単結晶基板、２は気相成長法で成長したＭｇＡｌ２
Ｏ４エピタキシャル膜である。(Example 1) MgA12o was deposited on a Si single crystal substrate with (100) plane orientation.
4 was epitaxially grown, and Bix(Sr,
Ca)yCuρ6 was formed by sputtering. 1st
Figures (a) and (b) are explanatory diagrams of this implementation, and 1 is (100)
Si single crystal substrate, 2 is MgAl2 grown by vapor phase growth method
It is an O4 epitaxial film.
３はスパッタ法で作成したＢｉｘ（Ｓｒ、 Ｃａ）、Ｃ
ｕρ６膜である。ＭｇＡｌ２Ｏ４の気相成長は本出願人
がすでに提案（特願昭５７−１３６０５１） している
方法で成長した。すなわち反応ガスとしてＭｇＣ１□、
ＡＩにＨＣＩガスを反応させて生成したＡｌＣｌ３．Ｃ
Ｏ２，Ｈ２ガスを用い、キャリアガスとしてＮ２ガスを
用いた。ＭｇＡ１□０４の生成反応は
ＭｇＣｌ２＋２ＡＩＣ１３＋４ＣＯ２＋４Ｈ２→ＭｇＡ
ｌ２Ｏ４＋ ４ＣＯ＋ ８ＨＣ１で表わされる。成長温
度９５０°Ｃで０．１ｐｍ成長し、Ｘ線回折及び電子線
回折で（１００）方位のＭｇＡｌ２Ｏ４がエピタキシャ
ル成長していることを確認した。Ｂｉｘ（Ｓｒ。3 is Bix (Sr, Ca), C prepared by sputtering method.
It is a uρ6 film. MgAl2O4 was grown by vapor phase growth using a method already proposed by the applicant (Japanese Patent Application No. 136051/1982). That is, MgC1□ as a reaction gas,
AlCl3. produced by reacting AI with HCI gas. C
O2 and H2 gases were used, and N2 gas was used as a carrier gas. The production reaction of MgA1□04 is MgCl2+2AIC13+4CO2+4H2→MgA
It is expressed as 12O4+ 4CO+ 8HC1. The film was grown to a thickness of 0.1 pm at a growth temperature of 950°C, and it was confirmed by X-ray diffraction and electron diffraction that MgAl2O4 in the (100) orientation was epitaxially grown. Bix (Sr.
Ｃａ）、Ｃｕ２０ｓ膜は高周波マグネトロンスパッタリ
ング法でｌｐｍ作製した。第１表に示す組成となるよう
に各酸化物を混合し９５０°Ｃで予焼した粉末をターゲ
ットに用い、Ａｒ−０２混合ガス中で、基板温度７００
’Ｃで行った。成膜後、四端子法によりＢｉｘ（Ｓｒ、
Ｃａ）、Ｃｕρ８膜の電気抵抗の温度変化を測定し、
第１表の臨界温度特性を得た。Ca) and Cu20s films were fabricated using a high frequency magnetron sputtering method. A powder of each oxide mixed with the composition shown in Table 1 and pre-fired at 950°C was used as a target, and the substrate temperature was 700°C in Ar-02 mixed gas.
I went with 'C. After film formation, Bix (Sr,
Ca), measuring the temperature change in the electrical resistance of the Cuρ8 film,
The critical temperature characteristics shown in Table 1 were obtained.
上記の組成範囲にあるＢｉｘ（Ｓｒ、 Ｃａ）、Ｃｕρ
６膜は超伝導物質と非超伝導物質が混在しているが超伝
導物質の体積比率が大きいために膜全体として超伝導特
性を再現性良く示す。しかしながら、ＢｉＸ（Ｓｒ。Bix (Sr, Ca), Cuρ in the above composition range
The 6th film contains a mixture of superconducting and non-superconducting materials, but because the volume ratio of the superconducting material is large, the film as a whole exhibits superconducting properties with good reproducibility. However, BiX(Sr.
Ｃａ）、Ｃｕρ８膜の組成が上記の範囲にない場合は非
超伝導物質の体積比率が大きくなり、半導体あるいは絶
縁体的電気特性を表わすようになる。従ってＢｉｘ（Ｓ
ｒ、 Ｃａ）、Ｃｕ７０．膜の組成は０．０８≦ｘ／（
ｘ ＋ｙ ＋ｚ）≦０．４１かつ０．２９≦ｙ／（ｘ
＋ｙ ＋ ｚ）≦０．４７かつ１≦Ｓｒ／Ｃａ≦３であ
ることが望ましい。If the composition of the Ca), Cuρ8 film is not within the above range, the volume ratio of the non-superconducting material becomes large, and the film exhibits semiconductor or insulator-like electrical characteristics. Therefore, Bix(S
r, Ca), Cu70. The composition of the film is 0.08≦x/(
x + y + z)≦0.41 and 0.29≦y/(x
+y + z)≦0.47 and 1≦Sr/Ca≦3.
第１表
（実施例２）
（１００）Ｓｉ単結晶基板上にエピタキシャル成長した
膜厚０．１ｐｍのＭｇＡｌ２Ｏ４膜を通してＳｉ基板を
熱酸化し、ＭｇＡｌ２Ｏ４膜とＳｉ基板の間にＳｉＯ２
を０．５ｐｍ形成したあとでＭｇＡｌ２Ｏ４エピタキシ
ャル膜上にＢｉｘ（Ｓｒ。Table 1 (Example 2) (100) The Si substrate was thermally oxidized through an MgAl2O4 film with a thickness of 0.1 pm epitaxially grown on a Si single crystal substrate, and SiO2
After forming 0.5 pm of Bix(Sr) on the MgAl2O4 epitaxial film.
Ｃａ）、Ｃｕρ６を１１１ｍ成長させた。Ca) and Cuρ6 were grown to 111 m.
第２図は本実施例の工程図である。４はＳｉ基板、５は
ＭｇＡｌ２Ｏ４エピタキシャル膜、６は５１０２．７は
Ｂｉｘ（Ｓｒ、 Ｃａ）ｙＣｕρ６膜で、（ａ）はＭｇ
Ａｌ２Ｏ４のエピタキシャル成長工程、（ｂ）は熱酸化
による５１０２の形成、（Ｃ）はＢｉｘ（Ｓｒ、Ｃａ）
ｙＣｕ２０６の成長工程を示す。熱酸化の条件は１１０
０°Ｃでの水蒸気酸化である。FIG. 2 is a process diagram of this example. 4 is a Si substrate, 5 is a MgAl2O4 epitaxial film, 6 is a 5102.7 Bix(Sr, Ca)yCuρ6 film, and (a) is an MgAl2O4 epitaxial film.
Epitaxial growth process of Al2O4, (b) formation of 5102 by thermal oxidation, (C) Bix (Sr, Ca)
The growth process of yCu206 is shown. Thermal oxidation conditions are 110
Steam oxidation at 0°C.
熱酸化によってＭｇＡｌ２Ｏ４膜のＸ線ロッキングカー
ブの半値幅は３０％減少し、結晶性は改善された。The half width of the X-ray rocking curve of the MgAl2O4 film was reduced by 30% by thermal oxidation, and the crystallinity was improved.
ＭｇＡｌ２Ｏ４及びＢｉＸ（Ｓｒ、 Ｃａ）、Ｃｕρ８
の成長は実施例１と同じ方法によった。いずれの組成に
おいても実施例１と同様な臨界温度特性が得られた。MgAl2O4 and BiX(Sr, Ca), Cuρ8
The growth was performed in the same manner as in Example 1. The same critical temperature characteristics as in Example 1 were obtained in all compositions.
（実施例３）
（１００）Ｓｉ単結晶基板上に膜厚８００人のＭｇＡ１
□０４をエピタキシャル成長しその上に膜厚０．５ｐｍ
のＭｇＯをエピタキシャル成長したのち実施例１と同様
に膜厚２ｐｍのＢｉｘ（Ｓｒ、 Ｃａ）、Ｃｕρ８を成
長した。いずれの組成においても実施例１と同様の臨界
温度が得られた。(Example 3) MgA1 with a film thickness of 800 on a (100)Si single crystal substrate
□04 is grown epitaxially and a film thickness of 0.5 pm is grown on it.
After epitaxially growing MgO, Bix (Sr, Ca) and Cuρ8 with a thickness of 2 pm were grown in the same manner as in Example 1. The same critical temperature as in Example 1 was obtained in all compositions.
第３図に本実施によって成る構成を示す。８はＳｉ単結
晶基板、９はＭｇＡｌ２Ｏ４エピタキシャル膜、１０は
ＭｇＯエピタキシャル膜、１１はＢｉｘ（Ｓｒ、 Ｃａ
）、ＣａＰ２膜である。FIG. 3 shows the configuration obtained by this implementation. 8 is a Si single crystal substrate, 9 is an MgAl2O4 epitaxial film, 10 is an MgO epitaxial film, and 11 is a Bix (Sr, Ca
), CaP2 film.
さらにＳｉ単結晶１ＳｉＯ２／ＭｇＡｌ２Ｏ４／ＭｇＯ
のような構成の基板にＢｉｘ（Ｓｒ、 Ｃａ）、Ｃｕｚ
Ｏ，を形成しても有効であることを確認した。Furthermore, Si single crystal 1SiO2/MgAl2O4/MgO
Bix (Sr, Ca), Cuz
It was confirmed that it is also effective to form O.
以上のように本発明によって、層状ペロブスカイト構造
を有する膜を容易にシリコン単結晶基板上に形成するこ
とが可能となった。シリコン単結晶基板は大口径で良質
のものが低価格に入手できること、及び超伝導体機能素
子とシリコンＩＣとを一体化できるという利点を考えれ
ば本発明の工業的価値は大きい。As described above, according to the present invention, it has become possible to easily form a film having a layered perovskite structure on a silicon single crystal substrate. The industrial value of the present invention is great considering the advantages that large-diameter, high-quality silicon single crystal substrates can be obtained at low cost, and that a superconductor functional element and a silicon IC can be integrated.
第１〜３図は本発明による基板の製造プロセスを示す図
。
１、４．８・・・Ｓｉ単結晶基板、２．５．９・・・Ｍ
ｇＡｌ２Ｏ４エピタキシャル膜、３．７．１１・Ｂｉｘ
（Ｓｒ、 Ｃａ）、ＣａＰ２膜、６・・・５ｉ０２．１
０・・・ＭｇＯエピタキシャル膜。1 to 3 are diagrams showing the manufacturing process of a substrate according to the present invention. 1, 4.8...Si single crystal substrate, 2.5.9...M
gAl2O4 epitaxial film, 3.7.11 Bix
(Sr, Ca), CaP2 film, 6...5i02.1
0...MgO epitaxial film.
Claims (4)
絶縁体膜上に一般式がＢｉ＿ｘ（Ｓｒ、Ｃａ）＿ｙＣｕ
＿ｚＯ＿δで表わされ、それぞれの金属元素成分の組成
が ０．０８≦ｘ／（ｘ＋ｙ＋ｚ）≦０．４１かつ０．２９
≦ｙ／（ｘ＋ｙ＋ｚ）≦０．４７かつ１≦Ｓｒ／Ｃａ≦
３の範囲内にある酸化物層が形成されていることを特徴
とする電子デバイス用基板。(1) An insulator film is formed on a silicon single crystal substrate, and the general formula Bi_x(Sr,Ca)_yCu is formed on the insulator film.
It is expressed as _zO_δ, and the composition of each metal element component is 0.08≦x/(x+y+z)≦0.41 and 0.29
≦y/(x+y+z)≦0.47 and 1≦Sr/Ca≦
A substrate for an electronic device, characterized in that an oxide layer falling within the range of 3 is formed.
グネシウムアルミネートスピネル（ＭｇＡｌ＿２Ｏ＿４
）エピタキシャル膜である特許請求の範囲第１項記載の
電子デバイス用基板。(2) The insulator film formed on the silicon single crystal substrate is magnesium aluminate spinel (MgAl_2O_4
) The electronic device substrate according to claim 1, which is an epitaxial film.
マグネシウムアルミネートスピネル（ＭｇＡｌ＿２Ｏ＿
４）エピタキシャル膜と、さらにその上に形成されるマ
グネシア（ＭｇＯ）エピタキシャル膜である特許請求の
範囲第１項記載の電子デバイス用基板。(3) The insulator film formed on the silicon single crystal film substrate is magnesium aluminate spinel (MgAl_2O_
4) The electronic device substrate according to claim 1, which comprises an epitaxial film and a magnesia (MgO) epitaxial film formed thereon.
シリコン基板表面に形成される二酸化シリコン（ＳｉＯ
＿２）層とこの上に形成される絶縁体エピタキシャル膜
とからなる特許請求の範囲第１項記載の電子デバイス用
基板。(4) The insulator film formed on the silicon single crystal substrate is silicon dioxide (SiO2) formed on the surface of the silicon substrate.
_2) The electronic device substrate according to claim 1, comprising a layer and an insulator epitaxial film formed thereon.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63070598A JPH01241877A (en) | 1988-03-23 | 1988-03-23 | Substrate for electronic device |
| US07/326,783 US5084438A (en) | 1988-03-23 | 1989-03-21 | Electronic device substrate using silicon semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63070598A JPH01241877A (en) | 1988-03-23 | 1988-03-23 | Substrate for electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01241877A true JPH01241877A (en) | 1989-09-26 |
Family
ID=13436161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63070598A Pending JPH01241877A (en) | 1988-03-23 | 1988-03-23 | Substrate for electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01241877A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60161635A (en) * | 1984-02-02 | 1985-08-23 | Nec Corp | Substrate for electronic device |
-
1988
- 1988-03-23 JP JP63070598A patent/JPH01241877A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60161635A (en) * | 1984-02-02 | 1985-08-23 | Nec Corp | Substrate for electronic device |
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