JPH01240663A - Chemical vapor deposition apparatus - Google Patents
Chemical vapor deposition apparatusInfo
- Publication number
- JPH01240663A JPH01240663A JP6532988A JP6532988A JPH01240663A JP H01240663 A JPH01240663 A JP H01240663A JP 6532988 A JP6532988 A JP 6532988A JP 6532988 A JP6532988 A JP 6532988A JP H01240663 A JPH01240663 A JP H01240663A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- silicon raw
- vapor deposition
- silicon material
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 93
- 239000010703 silicon Substances 0.000 claims abstract description 93
- 239000007788 liquid Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000009835 boiling Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims description 76
- 239000013078 crystal Substances 0.000 abstract description 11
- 239000002210 silicon-based material Substances 0.000 abstract description 11
- 230000008016 vaporization Effects 0.000 abstract description 6
- 238000009834 vaporization Methods 0.000 abstract description 5
- 229910003822 SiHCl3 Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 30
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 14
- 239000005052 trichlorosilane Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の目的
［産業上の利用分野］
本発明は、化学的蒸着装置に関し、特にシリコン原料容
器内でシリコン原料液体を沸点以上の温度に加熱するこ
とによりシリコン原料液体を気化せしめて化学的蒸着装
置本体に対し供給してなる化学的蒸着装置に関するもの
である。Detailed Description of the Invention (1) Purpose of the Invention [Field of Industrial Application] The present invention relates to a chemical vapor deposition apparatus, and in particular, the present invention relates to a chemical vapor deposition apparatus, and more particularly, to a chemical vapor deposition apparatus for depositing silicon by heating a silicon raw material liquid to a temperature above the boiling point in a silicon raw material container. The present invention relates to a chemical vapor deposition apparatus in which a raw material liquid is vaporized and supplied to a main body of the chemical vapor deposition apparatus.
［従来の技術］
従来この種の化学的蒸着装置としては、シリコン原料液
体を収容したシリコン原料容器に対して気体（たとえば
水素）を供給しバブリングを生しせしめることによりそ
のシリコン原料液体を気化したのち、供給管を介して化
学的蒸着装置本体すなわち反応室に供給していた。[Prior Art] Conventionally, this type of chemical vapor deposition apparatus vaporizes the silicon raw material liquid by supplying a gas (for example, hydrogen) to a silicon raw material container containing the silicon raw material liquid and causing bubbling. Thereafter, it was supplied to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber, via a supply pipe.
［解決すべき問題点］
しかしなから従来の化学的蒸着装置ては、（ｉ）バブリ
ングのための気体の流量制御上の問題からシリコン原料
ガスを１８ｇ／分以上の割合て化学的蒸着装置本体すな
わち反応室に供給することはできず、ひいてはシリコン
単結晶の成長速度が制約される欠点があり、また（ｉｉ
）シリコン原料液体の気化熱によってシリコン原料液体
の温度か低下してしまい、シリコン原料ガスを化学的蒸
着装置本体すなわち反応室に対して長時間安定して供給
できない欠点があり、結果的に（ｉｉｉ）シリコンの化
学的蒸着膜を低コストて製造てきない欠点があった。[Problems to be solved] However, in conventional chemical vapor deposition apparatuses, (i) due to problems in controlling the flow rate of gas for bubbling, silicon source gas is supplied at a rate of 18 g/min or more to the main body of the chemical vapor deposition apparatus; In other words, it cannot be supplied to the reaction chamber, which has the drawback that the growth rate of silicon single crystals is restricted, and (ii
) The temperature of the silicon raw material liquid decreases due to the heat of vaporization of the silicon raw material liquid, which has the disadvantage that silicon raw material gas cannot be stably supplied to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber for a long time, and as a result (iii ) The drawback was that chemically vapor deposited silicon films could not be manufactured at low cost.
そこて本発明は、これらの欠点を除去すべく。Therefore, the present invention aims to eliminate these drawbacks.
シリコン原料容器内でシリコン原料液体を沸点以上の温
度に加熱することによりシリコン原料液体を気化せしめ
る化学的７Ａ若装置を提供せんとするものである。It is an object of the present invention to provide a chemical device for vaporizing a silicon raw material liquid by heating the silicon raw material liquid to a temperature above the boiling point in a silicon raw material container.
（２）発明の構成 ［問題点の解決手段］ 本発明により提供される問題点の解決手段は。(2) Structure of the invention [Means for solving problems] The solution to the problem provided by the present invention is as follows.
「（ａ）シリコン原料液体を収容するシリコン原料容器
と、
（ｂ）前記シリコン原料容器に対して配設されており、
シリコン原料ガスを発生す
るために前記シリコン原料液体を沸点
以上の温度に加熱して気化する加熱装
置と、
（ｃ）前記シリコン原料ガスを前記シリコン原料容器か
ら化学的に蒸着装置本体に
対して供給するシリコン原料ガス供給
管と
を備えてなることを特徴とする化学的ノに着装惹」
である。``(a) a silicon raw material container containing a silicon raw material liquid; (b) disposed with respect to the silicon raw material container;
a heating device that heats the silicon raw material liquid to a temperature equal to or higher than its boiling point and vaporizes it to generate silicon raw material gas; (c) chemically supplies the silicon raw material gas from the silicon raw material container to the vapor deposition apparatus main body; It is characterized by being equipped with a silicon raw material gas supply pipe that is suitable for chemical applications.
［作用］
本発明にかかる化学的蒸着装置は、シリコン原料容器内
てシリコン原料液体を沸点以上の温度に加熱することに
よりシリコン原料液体を気化して化学的蒸着装置本体に
対し供給してなるので、（ｉ）シリコン原料液体の気化
熱の影響を回避しておりシリコン原料ガスを化学的蒸着
装置本体に対し長時間にわたり安定して供給せしめる作
用をなし、また（ｉｔ）バブリングのための気体を供給
する必要がなくシリコン原料ガスの供給量を増大せしめ
る作用をなし、ひいては（ｉｉｉ）シリコン単結晶の成
長速度を促進せしめる作用をなし、結果的に（ｉｖ）シ
リコンの化学的蒸着膜を低コストで製造する作用をなす
。[Function] The chemical vapor deposition apparatus according to the present invention vaporizes the silicon raw material liquid by heating the silicon raw material liquid to a temperature equal to or higher than the boiling point in the silicon raw material container, and supplies the vaporized silicon raw material liquid to the main body of the chemical vapor deposition apparatus. (i) It avoids the influence of the heat of vaporization of the silicon raw material liquid and has the effect of stably supplying the silicon raw material gas to the main body of the chemical vapor deposition apparatus over a long period of time, and (it) It acts to increase the supply amount of silicon raw material gas without the need for supply, and in turn, (iii) acts to accelerate the growth rate of silicon single crystals, and as a result (iv) makes the chemical vapor deposition film of silicon low cost. It acts to produce.
［実施例］
次に本発明について、添付図面を参照しつつ具体的に説
明する。[Example] Next, the present invention will be specifically described with reference to the accompanying drawings.
第１図は、本発明にかかる化学的蒸着装置の一実施例を
示す部分断面図である。FIG. 1 is a partial sectional view showing an embodiment of a chemical vapor deposition apparatus according to the present invention.
まず本発明にかかる化学的蒸着装置の一実施例について
、その構成を詳細に説明する。First, the configuration of an embodiment of the chemical vapor deposition apparatus according to the present invention will be explained in detail.
川は本発明にかかる化学的蒸着装置であって。A chemical vapor deposition apparatus according to the present invention.
シリコン原料液体（たとえばトリクロロシラン５ｉｌｌ
Ｃ１ｚあるいはテトラクロロシラン５ｉＣ１ｎ ） ｌ
ｌａを収容する、シリコン原料容器１１と、シリコン原
料１１ａの沸点よりも１０’Ｃ以上高い温度にシリコン
原料容器１１を加熱してシリコン原料１１ａを気化しシ
リコン原料ガスとするための加熱装置１２と、シリコン
原料容器１１から化学的蒸着装置本体すなわち反応室２
０に対してシリコン原料ガスを供給するためのシリコン
原料ガス供給管１３と、シリコン原料ガス供給管１３に
対して配設されておりシリコン原料ガスの供給量を調節
する流量：Ａｔ！５装置１４とを包有している。Silicon raw material liquid (e.g. trichlorosilane 5ill
C1z or tetrachlorosilane 5iC1n) l
a heating device 12 for heating the silicon raw material container 11 to a temperature 10'C or more higher than the boiling point of the silicon raw material 11a to vaporize the silicon raw material 11a into a silicon raw material gas; , from the silicon raw material container 11 to the chemical vapor deposition apparatus main body, that is, the reaction chamber 2.
A silicon raw material gas supply pipe 13 for supplying silicon raw material gas to 0 and a flow rate arranged for the silicon raw material gas supply pipe 13 to adjust the supply amount of silicon raw material gas: At! 5 devices 14.
ここでシリコン原料ガス供給管１３の周囲に保温手段（
たとえばリボンヒータ）を配置することにより保温して
おけば、仮にシリコン原料ガス供給管１３が延長されて
も、シリコン原料ガスの液化すなわち結露を防止てきる
ので好ましいが１本発明は、これに限定されるものては
ない。Here, a heat insulating means (
For example, if the silicon raw material gas is kept warm by arranging a ribbon heater (for example, a ribbon heater), even if the silicon raw material gas supply pipe 13 is extended, liquefaction of the silicon raw material gas, that is, dew condensation can be prevented, so it is preferable, but the present invention is limited to this. There is nothing that will be done.
更に本発明にかかる化学的蒸着装置の一実施例について
、その作用を詳細に説明する。Furthermore, the operation of an embodiment of the chemical vapor deposition apparatus according to the present invention will be explained in detail.
シリコン原料容器１１に対しシリコン原料液体（たとえ
ばトリクロロシラン５ｉＨＣ１，あるいはテトラクロロ
シラン５ｉＣＩＪ１１ａを収容したのち、加８装置１２
によりシリコン原料容器１１を加熱してシリコン原料液
体１１ａを、その沸点よりも高い温度（たとえばｌＯ°
Ｃ以上高い温度）に維持する。After storing the silicon raw material liquid (for example, trichlorosilane 5iHC1 or tetrachlorosilane 5iCIJ11a) in the silicon raw material container 11,
The silicon raw material container 11 is heated by heating the silicon raw material liquid 11a to a temperature higher than its boiling point (for example, lO°
temperature above C).
これによりシリコン原料液体１１ａが気化され、シリコ
ン原料ガスとしてシリコン原料ガス供給管１３および流
量調節装置１４を介して化学的蒸着装置本体すなわち反
応家並へ供給される。As a result, the silicon raw material liquid 11a is vaporized and supplied as a silicon raw material gas to the main body of the chemical vapor deposition apparatus, that is, to the reactor via the silicon raw material gas supply pipe 13 and the flow rate adjustment device 14.
加えて本発明にかかる化学的蒸着装置の一実施例につい
て、その理解を一層深めるために具体的な数値などを挙
げて説明する。In addition, an embodiment of the chemical vapor deposition apparatus according to the present invention will be described with reference to specific numerical values in order to further deepen understanding thereof.
±表置カ上
シリコン原料液体１１ａとしてトリクロロシラン５ｉｌ
ｌＣＩ＋を収容したシリコン原料容器１１を加熱装こ１
２によりシリコン原料液体１１ａすなわちトリクロロシ
ラン５ｉｌｌＣｌユの沸点よりも１口℃だけ高い温度に
加熱しつつ、流量調箇装に１４を：１ｇ節してシリコン
原料ガス供給管１３を介し４０ｇ／分までの割合でトリ
クロロシラン５ｉｌｌＣＩｉガスを化学的蒸着装置本体
すなわち反応家並に対して供給した。±trichlorosilane 5il as surface silicon raw material liquid 11a
The silicon raw material container 11 containing lCI+ is heated to 1.
2, while heating the silicon raw material liquid 11a, that is, 1 °C higher than the boiling point of trichlorosilane 5illCl, 14 is added to the flow rate adjustment device, and the silicon raw material gas supply pipe 13 is heated to 40 g/min through the silicon raw material gas supply pipe 13. Trichlorosilane 5illCIi gas was supplied to the main body of the chemical vapor deposition apparatus, that is, to the reactor at a rate of 5illCIi.
これにより化学的蒸着装置本体すなわち反応家並におけ
るシリコン単結晶のエピタキシャル成長膜の成長速度を
、３．０ｇｍ／分まで高めることかてきた。As a result, it has been possible to increase the growth rate of a silicon single crystal epitaxially grown film in the main body of the chemical vapor deposition apparatus, that is, in the reactor to 3.0 gm/min.
化学的蒸着装置本体すなわち反応室料に対し、安定にト
リクロロシラン５ｉｌｌＣ１＋を連続して供給てきる時
間は、シリコン原料容器１１の容量ひいてはシリコン原
料容器１１に収容されたシリコン原料液体１１ａすなわ
ちトリクロロシラン５ｉＨＣ１，の量によって決定され
ており、６０分間以上とできた。The time required to stably and continuously supply trichlorosilane 5illC1+ to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber material, is determined by the capacity of the silicon raw material container 11 and the silicon raw material liquid 11a stored in the silicon raw material container 11, that is, trichlorosilane 5iHC1. , the duration was determined by the amount of water, and the duration was 60 minutes or more.
以上の結果は、第１表に示されている。The above results are shown in Table 1.
呈１ス
また化学的蒸着装置本体すなわち反応室翻で形成されて
、シリコン単結晶エピタキシャル成長膜の肉厚ｔＥＰＩ
は、同一ハツチ内て４％だけのバラツキを有しており、
異なるバッチ間て６％だけのバラツキを有していた。It is also formed in the main body of the chemical vapor deposition apparatus, that is, in the reaction chamber, to increase the thickness of the silicon single crystal epitaxially grown film.
has a variation of only 4% within the same hatch,
There was only a 6% variation between different batches.
化学的蒸着装置本体すなわち反応家並で形成されたシリ
コン単結晶のエピタキシャル成長膜の比抵抗ρＥＰＩは
、１４０〜２００ΩＣ−であり、同一バッチ内で７％だ
けのバラツキを有し、かつ異なるバッチ間て１３％だけ
のバラツキを有していた。The specific resistance ρEPI of the silicon single crystal epitaxially grown film formed in the main body of the chemical vapor deposition equipment, i.e., the reactor, is 140 to 200 ΩC-, with a variation of only 7% within the same batch, and between different batches. It had a variation of only 13%.
以上の結果は、第２表に示されている。The above results are shown in Table 2.
第２表
（比較例）
シリコン原料容器中のシリコン原料液体（ここてはトリ
クロロシラン５ｉ）ｌｃｈ）に対して水素ガスを供給し
、バブリングによりトリクロロシラン５ｉｌｌＣ１＋を
気化せしめてトリクロロシラン５ｉＨＣ１ｔガスとした
。Table 2 (Comparative Example) Hydrogen gas was supplied to the silicon raw material liquid (here, trichlorosilane 5i)lch) in the silicon raw material container, and trichlorosilane 5illC1+ was vaporized by bubbling to form trichlorosilane 5iHC1t gas.
トリクロロシラン５ｉｌｌＣ１，は、供給管を介して１
８ｇ／分まで化学的蒸着装置本体すなわち反応室に供給
された。Trichlorosilane 5illC1, 1
Up to 8 g/min was supplied to the chemical vapor deposition apparatus body or reaction chamber.
これにより化学的蒸着装置本体すなわち反応室における
シリコン単結晶のエピタキシャル成長膜の成長速度は、
１．！ｉＪＬｍ／分まててあった。As a result, the growth rate of the silicon single crystal epitaxially grown film in the main body of the chemical vapor deposition apparatus, that is, the reaction chamber, is
1. ! I was waiting for iJLm/minute.
化学的蒸着装置本体すなわち反応室に対し、安定にトリ
クロロシラン５ｉｌｌＣ１，ガスを連続して供給てきる
時間は、シリコン原料液体（ここてはトリクロロシラン
５ｉＨＣ１３）の気化熱によってその液温か低下してし
まったので、約５０分に過ぎなかった。The time it takes to stably and continuously supply trichlorosilane 5illC1 gas to the main body of the chemical vapor deposition apparatus, that is, the reaction chamber, is due to the temperature of the silicon material liquid (here, trichlorosilane 5iHC13) decreasing due to the heat of vaporization of the silicon raw material liquid (trichlorosilane 5iHC13). So it only took about 50 minutes.
以上の結果は、第１表に併せて示されている。The above results are also shown in Table 1.
また化学的蒸着装置本体すなわち反応室で形成されたシ
リコン単結晶のエピタキシャル成長膜の肉厚ｔ２．．は
、同一バッチ内で７％だけのバラツキを有しており、異
なるハツチ間で９％だけのバラツキを有していた。Also, the thickness t2 of the silicon single crystal epitaxially grown film formed in the main body of the chemical vapor deposition apparatus, that is, the reaction chamber. ．． had a variation of only 7% within the same batch and a variation of only 9% between different batches.
化学的蒸発装置本体すなわち反応室で形成されたシリコ
ン単結晶のエピタキシャル成長膜の比抵抗ρＥＰ□は、
７０〜１２０Ωｃｍであり、同−へウチ内て１２％だけ
のバラツキを有し、かつ異なるバッチ間で１９％だけの
バラツキを有していた。The specific resistance ρEP□ of the silicon single crystal epitaxially grown film formed in the main body of the chemical evaporation device, that is, the reaction chamber, is:
70-120 Ωcm, with a variation of only 12% within the batch and a variation of only 19% between different batches.
以上の結果は、第２表に示されている。The above results are shown in Table 2.
（３）発明の効果
上述より明らかなように本発明にかかる化学的薄着装置
は、
（ａ）シリコン原料液体を収容するシリコン原料容器と
、
（ｂ）前記シリコン原料容器に対して配設されており、
シリコン原料ガスを発生するために前記シリコン原料液
体を沸点以上の温度に加熱して気化する加熱装置と。(3) Effects of the Invention As is clear from the above, the chemical thinning apparatus according to the present invention includes (a) a silicon raw material container containing a silicon raw material liquid; (b) a silicon raw material container disposed with respect to the silicon raw material container; Ori,
A heating device that heats the silicon raw material liquid to a temperature equal to or higher than its boiling point and vaporizes it to generate a silicon raw material gas.
（Ｃ）前記シリコン原料ガスを前記シリコン原料容器か
ら化学的蒸着装置本体に対して供給するシリコン原料ガ
ス供給管と
を備えてなるので、
（ｉ）シリコン原料液体の気化熱の影
響を回避でき、ひいてはシリコ
ン原料ガスを化学的蒸着装置本
体に対し長時間にわたり安定し
て供給できる効果
を有し、また
（ｉｉ）バブリングのための気体を供給する必要がなく
、シリコン原料
ガスの供給量を増大せしめるこ
とかてきる効果
を有し、ひいては
（ｉｉｉ）シリコン単結晶の成長速度を促進せしめるこ
とかてきる効果
を有し、結果的に
（ｉｖ）シリコンの化学的蒸着膜を低コストで製造てき
る効果
を有する。(C) a silicon raw material gas supply pipe that supplies the silicon raw material gas from the silicon raw material container to the main body of the chemical vapor deposition apparatus; (i) the influence of the heat of vaporization of the silicon raw material liquid can be avoided; Furthermore, it has the effect of stably supplying silicon source gas to the chemical vapor deposition apparatus main body over a long period of time, and (ii) there is no need to supply gas for bubbling, increasing the amount of silicon source gas supplied. In turn, (iii) it has the effect of accelerating the growth rate of silicon single crystals, and as a result (iv) it can produce chemically vapor deposited silicon films at low cost. have an effect.
第１図は、本発明にかかる化学的蒸着装置の一実施例を
示す部分断面図である。FIG. 1 is a partial sectional view showing an embodiment of a chemical vapor deposition apparatus according to the present invention.
Claims (1)
、 （ｂ）前記シリコン原料容器に対して配設されており、
シリコン原料ガスを発生するた めに前記シリコン原料液体を沸点以上の温度に加熱して
気化せしめる加熱装置と、 （ｃ）前記シリコン原料ガスを前記シリコン原料容器か
ら化学的蒸着装置本体に対して 供給するシリコン原料ガス供給管と を備えてなることを特徴とする化学的蒸着装置。[Scope of Claims] (a) a silicon raw material container containing a silicon raw material liquid; (b) disposed with respect to the silicon raw material container;
a heating device that heats the silicon raw material liquid to a temperature equal to or higher than its boiling point and vaporizes it in order to generate a silicon raw material gas; (c) supplying the silicon raw material gas from the silicon raw material container to the main body of the chemical vapor deposition apparatus; A chemical vapor deposition apparatus comprising: a silicon raw material gas supply pipe;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6532988A JPH01240663A (en) | 1988-03-18 | 1988-03-18 | Chemical vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6532988A JPH01240663A (en) | 1988-03-18 | 1988-03-18 | Chemical vapor deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01240663A true JPH01240663A (en) | 1989-09-26 |
Family
ID=13283772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6532988A Pending JPH01240663A (en) | 1988-03-18 | 1988-03-18 | Chemical vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01240663A (en) |
-
1988
- 1988-03-18 JP JP6532988A patent/JPH01240663A/en active Pending
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