JPH01238116A - Heating apparatus - Google Patents
Heating apparatusInfo
- Publication number
- JPH01238116A JPH01238116A JP6610888A JP6610888A JPH01238116A JP H01238116 A JPH01238116 A JP H01238116A JP 6610888 A JP6610888 A JP 6610888A JP 6610888 A JP6610888 A JP 6610888A JP H01238116 A JPH01238116 A JP H01238116A
- Authority
- JP
- Japan
- Prior art keywords
- heated
- transmittance
- transmittance variable
- variable transmittance
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 18
- 238000002834 transmittance Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011575 calcium Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
加熱装置における被加熱物の表面温度の分布を任意に変
化させることが可能なフィルタの改良に関し、
一定の温度分布を有する熱源に対して、被加熱物の形状
１寸法に対応して簡単且つ容易に被加熱物の均一な表面
温度分布を得ることが可能な加熱装置の提供を目的とし
、
熱源から熱線を被加熱物に照射する装置であって、前記
熱源と前記被加熱物の間に、透過率可変膜を基板に備え
た透過率可変フィルタを配設するよう構成する。[Detailed Description of the Invention] [Summary] Regarding the improvement of a filter that can arbitrarily change the distribution of the surface temperature of the object to be heated in a heating device. The object of the present invention is to provide a heating device that can simply and easily obtain a uniform surface temperature distribution of a heated object corresponding to one dimension of the shape, and the device irradiates the heated object with heat rays from a heat source, A variable transmittance filter having a variable transmittance film on a substrate is disposed between the heat source and the object to be heated.
本発明は、加熱装置に係り、特に被加熱物の表面温度の
分布を任意に変化させることが可能なフィルタの改良に
関するものである。The present invention relates to a heating device, and particularly to an improvement in a filter that can arbitrarily change the distribution of the surface temperature of an object to be heated.
被加熱物の表面温度を所定の温度に加熱する、赤外線ラ
ンプ等を用いた半導体基板等の熱処理に用いる加熱装置
においては、赤外線ランプ等の熱源の照度分布と被加熱
物の表面温度分布の相関関係は°、被加熱物の寸法或い
は周辺状況により一定とならず、被加熱物の表面温度分
布を被加熱物毎に最適状態にするためには、それぞれの
場合に対応する装置の大幅な改造が必要である。In a heating device used for heat treatment of semiconductor substrates, etc. using an infrared lamp, etc., which heats the surface temperature of the heated object to a predetermined temperature, the correlation between the illuminance distribution of the heat source such as the infrared lamp and the surface temperature distribution of the heated object is determined. The relationship is not constant depending on the size of the heated object or surrounding conditions, and in order to optimize the surface temperature distribution of the heated object for each heated object, significant modification of the equipment corresponding to each case is required. is necessary.
以上のような状況から、一定の温度分布を有する熱源に
対して、被加熱物の形状９寸法に対応した被加熱物の均
一な表面温度分布を得ることが可能な加熱装置が要望さ
れている。Under the above circumstances, there is a need for a heating device that can obtain a uniform surface temperature distribution of a heated object corresponding to the nine dimensions of the heated object using a heat source having a constant temperature distribution. .
従来の半導体基板の加熱装置について第４図〜第５図に
より説明する。A conventional semiconductor substrate heating device will be explained with reference to FIGS. 4 and 5.
第４図に示すような赤外線ランプ加熱装置においては、
処理室■４の中に設けた炭素或いはステンレス、石英等
よりなる載物台１５の上に半導体基板等の被加熱物１２
を載置し、熱源である赤外線ランプ１１から赤外線を放
射させ、石英よりなる入射窓１６を透過した赤外線を被
加熱物１２に照射して被加熱物１２の表面を加熱し、表
面温度を上昇させている。In the infrared lamp heating device as shown in Fig. 4,
An object to be heated 12 such as a semiconductor substrate is placed on a stage 15 made of carbon, stainless steel, quartz, etc. provided in the processing chamber 4.
is mounted, the infrared lamp 11 serving as a heat source emits infrared rays, and the object to be heated 12 is irradiated with infrared rays that have passed through the entrance window 16 made of quartz, thereby heating the surface of the object to be heated 12 and increasing the surface temperature. I'm letting you do it.
このような赤外線ランプ加熱装置の熱源である赤外線ラ
ンプ１１の照度の分布と被加熱物１２の表面温度の分布
の関係は第５図に示すようになる。The relationship between the distribution of illuminance of the infrared lamp 11, which is the heat source of such an infrared lamp heating device, and the distribution of the surface temperature of the object to be heated 12 is shown in FIG.
即ち、第５図ｆａ）に実線で示すように赤外線ランプ１
１の照度分布が略一定の場合には、第５図（ｂ）に実線
で示すように被加熱物１２の表面温度の分布は放熱等に
より周辺部の温度が低くなるので、第５図ｆｂｌに点線
で示すような表面温度の分布を得るためには第５図ｆａ
）に点線で示すような周辺部の照度が高い熱源が必要に
なり、このような照度の調節を行うには装置の大幅な改
造が必要である。That is, as shown by the solid line in Fig. 5 fa), the infrared lamp 1
When the illuminance distribution of 1 is approximately constant, the surface temperature distribution of the heated object 12 becomes lower due to heat radiation, etc., as shown by the solid line in FIG. 5(b). In order to obtain the surface temperature distribution as shown by the dotted line in Figure 5fa
), a heat source with high illuminance in the peripheral area is required, as shown by the dotted line, and significant modification of the equipment is required to adjust the illuminance in this way.
以上説明の従来の加熱装置においては、寸法の異なる複
数の被加熱物に対応して被加熱物の表面温度を均一にす
るには、それぞれの被加熱物に対応した装置の大幅な改
造が必要であるという問題点があった。With the conventional heating device described above, in order to make the surface temperature of the heated objects uniform when handling multiple heated objects with different dimensions, it is necessary to significantly modify the device for each heated object. There was a problem that.
本発明は以上のような状況から一定の温度分布を有する
熱源に対して、被加熱物の形状１寸法に対応して簡単且
つ容易に被加熱物の均一な表面温度分布を得ることが可
能な加熱装置の提供を目的としたものである。In light of the above-mentioned circumstances, the present invention makes it possible to simply and easily obtain a uniform surface temperature distribution of a heated object, corresponding to one dimension of the shape of the heated object, for a heat source having a constant temperature distribution. The purpose is to provide a heating device.
上記問題点は、熱源から熱線を被加熱物に照射する装置
であって、この熱源と前記被加熱物の間に、透過率可変
膜を基板に備えた透過率可変フィルタを配設した本発明
による加熱装置によって解決される。The above problem is solved by the present invention, which is a device that irradiates a heated object with heat rays from a heat source, and a variable transmittance filter having a variable transmittance film on a substrate is disposed between the heat source and the heated object. Solved by a heating device.
即ち本発明においては熱源から照射された熱線を、透過
率可変膜を入射窓に備えた透過率可変フィルタを透過さ
せ、処理室の中に設けた載物台の上にｆｉ３を置した被
加熱物に入射窓を通して照射するので、透過率を部分的
に変更し得る透過率可変膜の各部分の透過率を変化させ
ることにより、被加熱物の表面温度分布を所望の温度分
布にすることが可能となる。That is, in the present invention, the heat rays irradiated from the heat source are transmitted through a variable transmittance filter having a variable transmittance film in the entrance window, and then the heat rays irradiated from the heat source are passed through a variable transmittance filter having a variable transmittance film in the entrance window, and then Since the object is irradiated through the incident window, by changing the transmittance of each part of the variable transmittance film, which can partially change the transmittance, the temperature distribution on the surface of the object to be heated can be made into the desired temperature distribution. It becomes possible.
以下第１図〜第４図により本発明の一実施例及び他の実
施例について説明する。 、本発明の一実施例の透過
率可変フィルタ３は第１図（ａｌに示すように、石英よ
りなる基板３ａの表面に同心円状の各部分毎に、それぞ
れの印加電源により異なる値の電圧を印加することが可
能なイオン伝導ガデスよりなる透過率可変膜３ｂを形成
し、それぞれの透過率可変膜３ｂに印加する電圧を制御
することにより、各部分の透過率可変膜３ｂの透過率を
変化させることが可能なものである。One embodiment and other embodiments of the present invention will be described below with reference to FIGS. 1 to 4. As shown in FIG. 1 (al), the variable transmittance filter 3 of one embodiment of the present invention applies voltages of different values to each concentric portion of the surface of the substrate 3a made of quartz depending on the applied power source. By forming a variable transmittance film 3b made of ion conductive gas that can be applied, and controlling the voltage applied to each variable transmittance film 3b, the transmittance of the variable transmittance film 3b of each part is changed. It is possible to do so.
イオン伝導ガラスは、透明石英ガラスに鉛（Ｐｂ）、カ
リウム（Ｋ）、カルシウム（Ｃａ）等のイオン種を含有
させたガラスであり、印加電圧の値に応じて透過率が変
化するものである。Ion conductive glass is transparent quartz glass containing ionic species such as lead (Pb), potassium (K), and calcium (Ca), and its transmittance changes depending on the value of applied voltage. .
また、オン伝導ガラスの透明電極３Ｃには、５ｎＯｘ等
の導電性のある透明なガラスを用いている。In addition, a conductive transparent glass such as 5nOx is used for the on-conducting glass transparent electrode 3C.
このような構造の透過率可変膜３ｂを有する透過率可変
フィルタ３の透過率変化状態と被加熱物２の表面温度分
布状態の関係は第３図に示すようなものとなる。The relationship between the transmittance change state of the transmittance variable filter 3 having the transmittance variable film 3b having such a structure and the surface temperature distribution state of the heated object 2 is as shown in FIG.
第３図（ａ）は透過率可変膜３ｂに電圧を印加しない状
態を示しており、被加熱物２０表面温度分布は周辺が低
温になっている。FIG. 3(a) shows a state in which no voltage is applied to the variable transmittance film 3b, and the temperature distribution on the surface of the object to be heated 20 is such that the periphery is low temperature.
第３図（ｂ）は透過率可変１１１３ｂの周辺部に電圧を
印加した状態を示しており、被加熱ｖＡ２の表面温度分
布は第２図（ａ）の場合よりもなお一層周辺が低温にな
っている。FIG. 3(b) shows a state in which a voltage is applied to the periphery of the variable transmittance 1113b, and the surface temperature distribution of the heated vA2 becomes even colder at the periphery than in the case of FIG. 2(a). ing.
第３図（Ｃ１は透過率可変膜３ｂの中央部に電圧を印加
した状態を示しており、中央部に照射される熱線が透過
率可変膜３ｂで遮られるので、被加熱物２の表面温度分
布は中央部が低くなり略均−になっている。FIG. 3 (C1 shows a state in which a voltage is applied to the central part of the variable transmittance film 3b, and since the heat rays irradiated to the central part are blocked by the variable transmittance film 3b, the surface temperature of the object to be heated 2 The distribution is approximately average with the center being low.
第３図（ｄ）は透過率可変膜３ｂの周辺部と中央部に電
圧を印加した場合を示しており、照射される熱線が透過
率可変膜３ｂで遮られるので、周辺部は照射されず、直
径が小さい被加熱物２の表面温度分布は中央部が低くな
り略均−になっている。FIG. 3(d) shows a case where a voltage is applied to the peripheral and central parts of the variable transmittance film 3b, and the irradiated heat rays are blocked by the variable transmittance film 3b, so the peripheral parts are not irradiated. The surface temperature distribution of the object 2 to be heated, which has a small diameter, is low in the center and approximately uniform.
このような透過率可変フィルタ３を第４図に示す入射窓
１６の表面に設け、この透過率可変膜３ｂの各部分に電
圧を印加し、それぞれの部分の透過率を変化させること
により、被加熱物２の表面゛温度分布を制御することが
可能となる。Such a variable transmittance filter 3 is provided on the surface of the entrance window 16 shown in FIG. 4, and a voltage is applied to each portion of the variable transmittance film 3b to change the transmittance of each portion. It becomes possible to control the temperature distribution on the surface of the heated object 2.
本発明に用いる透過率可変フィルタ３の冷却が必要な場
合には、透過率可変フィルタ３の表面に沿って空気を流
して空冷するか、或いは透過率可変フィルタ３と、第４
図に示す入射窓１６と、その間の周囲に設けた壁面とか
らなるウォータージャケットを設けて冷却水を流して冷
却を行う。When it is necessary to cool the variable transmittance filter 3 used in the present invention, air is cooled by flowing air along the surface of the variable transmittance filter 3, or the variable transmittance filter 3 and the fourth filter are cooled.
A water jacket consisting of the entrance window 16 shown in the figure and a wall provided around the window is provided, and cooling is performed by flowing cooling water.
なお、透過率可変膜３ｂの形状は上記の同心円状の外に
、被加熱物２の形状に応じて第２図に示す他の実施例の
ように、角形のものをマトリックス状に配置したものと
することも可能である。The shape of the variable transmittance film 3b may be, in addition to the above-mentioned concentric circular shape, a matrix of rectangular shapes, as shown in another embodiment shown in FIG. 2, depending on the shape of the object to be heated 2. It is also possible to do this.
以上の説明から明らかなように本発明によれば、極めて
簡単な構造の透過率可変フィルタを熱源と被加熱物の間
に配設し、透過率可変フィルタの透過率可変膜の各部分
の透過率を、それぞれの印加電圧を調節することにより
任意に変化させ、被加熱物の表面に照射される熱線の量
を制御して被加熱物の表面の均一な温度分布を形成する
ことが可能となる利点があり、著しい経済的及び、信頼
性向上の効果が期待でき工業的には極めて有用なもので
ある。As is clear from the above description, according to the present invention, a variable transmittance filter having an extremely simple structure is disposed between a heat source and an object to be heated, and the transmission of each part of the variable transmittance membrane of the variable transmittance filter is By adjusting the respective applied voltages, it is possible to arbitrarily change the rate and control the amount of heat rays irradiated onto the surface of the object to be heated, thereby forming a uniform temperature distribution on the surface of the object to be heated. It has the following advantages, and can be expected to have significant economical and reliability-improving effects, making it extremely useful industrially.
第１図は本発明による一実施例の透過率可変フィルタの
構造を示す図、
゛ 第２図は本発明による他の実施例の透過率可変フィ
ルタの構造を示す図、
第３図は本発明による一実施例の透過率可変膜の状態と
被加熱物の表面の温度の分布
を示す図、
第４図は赤外線ランプ加熱装置の概略構造図、第５図は
従来の加熱装置における熱源の照度分布と被加熱物の表
面温度の分布を示す
図、である。
図において、
３．１３は透過率可変フィルタ、
３ａ、１３ａは基板、３ｂ、１３ｂは透過率可変膜、３
ｃ、 １３ｃは透明電極、１１は赤外線ランプ、１２は
被加熱物、１４は処理室、１５は載物台、１６は入射窓
、 を示す。
ｆａｌ平面図
［ｂｌ側面図
−本発明による一実施例の通過率可変フィルタの構造を
示す図ｆａ＋乎面図
面図＋側面図
を発明による他の実施例の透過率可変フィルタの構造を
示す図ｆａｌ ｉＢ透過率可変膜電圧を印加しない状
態（ト））透過率可変膜の周辺部に電圧を印加した状態
（Ｃ１透過率可変膜の中心部に電圧を印加した状態（ｄ
） 透過率可変膜の周辺部と中心部に電圧を印加した
状態第３図
Ｏ○○○○○○（）７１１赤外線ランプ赤外線ランプ加
熱装置の概略構造図
第４図
ｔａ＋ 熱源の照度の分布 ｆｂｌ 被加熱
物の表面温度の分布第５図FIG. 1 is a diagram showing the structure of a variable transmittance filter according to one embodiment of the present invention, FIG. 2 is a diagram showing the structure of a variable transmittance filter according to another embodiment of the present invention, and FIG. Fig. 4 is a schematic structural diagram of an infrared lamp heating device, and Fig. 5 is a diagram showing the illuminance of a heat source in a conventional heating device. FIG. 3 is a diagram showing the distribution and the distribution of the surface temperature of the heated object. In the figure, 3.13 is a variable transmittance filter, 3a, 13a are substrates, 3b, 13b are variable transmittance films, 3
13c is a transparent electrode, 11 is an infrared lamp, 12 is an object to be heated, 14 is a processing chamber, 15 is a stage, and 16 is an entrance window. fal Plan view [bl Side view - A diagram showing the structure of a variable transmittance filter according to an embodiment of the present invention fa + Top drawing + Side view fal A diagram showing the structure of a variable transmittance filter according to another embodiment according to the invention iB State where no voltage is applied to the variable transmittance film (g)) State where voltage is applied to the peripheral part of the variable transmittance film (C1 state where voltage is applied to the center of the variable transmittance film (d)
) State where voltage is applied to the periphery and center of the variable transmittance film Figure 3 O○○○○○○ () 711 Infrared lamp Schematic structural diagram of the infrared lamp heating device Figure 4 ta+ Illuminance distribution of the heat source fbl Figure 5 Distribution of surface temperature of heated object
Claims (1)
であって、前記熱源（１）と前記被加熱物（２）の間に
、透過率可変膜（３ｂ）を基板（３ａ）に備えた透過率
可変フィルタ（３）を配設したことを特徴とする加熱装
置。A device for irradiating a heated object (2) with heat rays from a heat source (1), wherein a variable transmittance film (3b) is placed between the heat source (1) and the heated object (2) on a substrate (3a). A heating device characterized in that a variable transmittance filter (3) is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6610888A JP2615783B2 (en) | 1988-03-18 | 1988-03-18 | Heating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6610888A JP2615783B2 (en) | 1988-03-18 | 1988-03-18 | Heating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01238116A true JPH01238116A (en) | 1989-09-22 |
| JP2615783B2 JP2615783B2 (en) | 1997-06-04 |
Family
ID=13306363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6610888A Expired - Fee Related JP2615783B2 (en) | 1988-03-18 | 1988-03-18 | Heating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2615783B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07249589A (en) * | 1994-03-10 | 1995-09-26 | Tokyo Electron Ltd | Heat treatment device |
| US5751896A (en) * | 1996-02-22 | 1998-05-12 | Micron Technology, Inc. | Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| JP2003513442A (en) * | 1999-10-28 | 2003-04-08 | シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method and apparatus for heat treating substrate |
| JP2010135508A (en) * | 2008-12-03 | 2010-06-17 | Tokyo Electron Ltd | Apparatus and method for heating substrate and storage medium |
| JP2016162880A (en) * | 2015-03-02 | 2016-09-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate heat treatment apparatus and substrate temperature adjustment method |
| JP2022536705A (en) * | 2019-06-13 | 2022-08-18 | マトソン テクノロジー インコーポレイテッド | Heat treatment system with transmissive switch plate |
-
1988
- 1988-03-18 JP JP6610888A patent/JP2615783B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07249589A (en) * | 1994-03-10 | 1995-09-26 | Tokyo Electron Ltd | Heat treatment device |
| US5751896A (en) * | 1996-02-22 | 1998-05-12 | Micron Technology, Inc. | Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| US6043450A (en) * | 1996-02-22 | 2000-03-28 | Micron Technology, Inc. | Method to compensate for non-uniform film growth during chemical vapor deposition |
| US6051823A (en) * | 1996-02-22 | 2000-04-18 | Micron Technology, Inc. | Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| US6243534B1 (en) | 1996-02-22 | 2001-06-05 | Micron Technology, Inc. | Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition |
| JP2003513442A (en) * | 1999-10-28 | 2003-04-08 | シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method and apparatus for heat treating substrate |
| JP2010135508A (en) * | 2008-12-03 | 2010-06-17 | Tokyo Electron Ltd | Apparatus and method for heating substrate and storage medium |
| JP2016162880A (en) * | 2015-03-02 | 2016-09-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate heat treatment apparatus and substrate temperature adjustment method |
| JP2022536705A (en) * | 2019-06-13 | 2022-08-18 | マトソン テクノロジー インコーポレイテッド | Heat treatment system with transmissive switch plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2615783B2 (en) | 1997-06-04 |
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