JPS60145629A - Heat treating method - Google Patents
Heat treating methodInfo
- Publication number
- JPS60145629A JPS60145629A JP59002175A JP217584A JPS60145629A JP S60145629 A JPS60145629 A JP S60145629A JP 59002175 A JP59002175 A JP 59002175A JP 217584 A JP217584 A JP 217584A JP S60145629 A JPS60145629 A JP S60145629A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- substrate
- transparent substrate
- absorbed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体デバイスの製造方法、特に透明基板上の
不透明膜、特に半導体膜を光加熱によって熱処理する方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for heat-treating an opaque film on a transparent substrate, particularly a semiconductor film, by optical heating.
（従来技術）
従来の電気炉法に替り、近年ハロゲンランプ等を用いた
短時間アニール法が注目されている。この方法は発熱源
の温度を、熱処理温度よシ尚くすることによシ、よシ大
きな輻射熱を発生させ、短時間で加熱し、所定の温度に
達すると発熱を弱めて温度を一定に保つというものであ
る。(Prior Art) In place of the conventional electric furnace method, a short-time annealing method using a halogen lamp or the like has recently been attracting attention. This method generates a large amount of radiant heat by raising the temperature of the heat source to a level higher than the heat treatment temperature, heats it in a short time, and when it reaches a predetermined temperature, the heat generation is reduced to keep the temperature constant. That is what it is.
（従来技術の問題点）
この方法を５ＯＳ（シリコン・オン・ザファイア）など
透明基板上に半導体デバイスを形成する工程に用いると
、輻射光が基板を透過してしまい吸収量が少ないため短
時間で加熱することができない。(Problems with the prior art) When this method is used in the process of forming semiconductor devices on a transparent substrate such as 5OS (Silicon on the Fire), the radiation light passes through the substrate and the amount of absorption is small, so it can be completed in a short time. cannot be heated.
またＩＣ−？ＬＳＩの製造工程において透明基板上に厚
さ０．５μｍ程度の薄いシリコン膜でできたパターンが
存在すると、薄いシリコン膜はある程度光を吸収するた
めパターンの密度によって吸ｌＡ駄がかわり、温度の上
昇率や、到達温度が変シテバイス特性に大きな変動を与
え不都合を生じる。IC- again? In the LSI manufacturing process, when a pattern made of a thin silicon film with a thickness of about 0.5 μm exists on a transparent substrate, the thin silicon film absorbs a certain amount of light, so the absorption capacity changes depending on the density of the pattern, causing a rise in temperature. The rate of change and the temperature reached will cause large fluctuations in the device characteristics, causing inconvenience.
第１図は従来法を説明するための基板の断面模式図であ
る。透明基板１上に、２で示すように、基板１の厚さに
比し大きな寸法の不透明半導体膜がある場合、光臨から
の光はこの半導体膜２に吸収され、半導体膜２は短時間
で同温に達する。しかし、３に示した、基板１の厚さに
比し小さな寸法の不透明半導体膜では、光源からの光は
半導体３で吸収される以外は透過して加熱に寄与せず、
半導体膜３で吸収した熱エネルギーは半導体膜３の１０
下のみならず近傍を３改元的拡りをもって加熱する必要
があるため短時間では昇温しない。特にランプアニール
のような短時間アニールでは最高温度がパターン形状に
より変わり、イオン注入不純物原子の活性化や拡散に不
均一が生じる。FIG. 1 is a schematic cross-sectional view of a substrate for explaining the conventional method. When there is an opaque semiconductor film on the transparent substrate 1, which has a larger size than the thickness of the substrate 1, as shown by 2, the light from the light is absorbed by the semiconductor film 2, and the semiconductor film 2 is absorbed by the semiconductor film 2 in a short time. reach the same temperature. However, in the opaque semiconductor film shown in 3, which is smaller in size than the thickness of the substrate 1, the light from the light source is transmitted, except for being absorbed by the semiconductor 3, and does not contribute to heating.
Thermal energy absorbed by the semiconductor film 3 is
Since it is necessary to heat not only the bottom but also the vicinity in a three-dimensional manner, the temperature will not rise in a short period of time. In particular, in short-time annealing such as lamp annealing, the maximum temperature varies depending on the pattern shape, causing non-uniform activation and diffusion of ion-implanted impurity atoms.
（発明の目的）
本発明は上記欠点を除去し、透明基板上にどのような形
状、密ＭＥでパターンが形成されていても均一に加熱が
できる方法を提供することを目的とする０
（発明の構成）
本発明は、光加熱によって熱処理される透明基板の裏面
に光を吸収する膜を付けることにより構成される。(Objective of the Invention) An object of the present invention is to eliminate the above-mentioned drawbacks and provide a method that can uniformly heat a pattern no matter what shape or density ME is formed on a transparent substrate. (Constitution) The present invention is constituted by attaching a light-absorbing film to the back surface of a transparent substrate that is heat-treated by optical heating.
（（１＃成の詳細な説明）
第２図は本発明のように光吸収膜４例えば多結晶シリコ
ン膜を付けた試料の断面模式図である。(Detailed Description of 1# Formation) FIG. 2 is a schematic cross-sectional view of a sample provided with a light absorption film 4, for example, a polycrystalline silicon film, as in the present invention.
この場合、寸法の小さい半導体膜３に吸収されなかった
光も光吸収膜４で吸収されるだめ、寸法の大小にかかわ
らず半導体膜２．３は同一の温度になる。透明基板１の
厚みによる熱伝導の遅れの時定数は基板１の熱伝導度を
Ａ、比熱をＢ、比重をＣ１厚みをＷとするとｗ２ＢＣ／
Ａと表わされ、基板１の拐質を石英とするとＡ＝０．０
２ Ｊ／ｃｍ−ｓｅｔ・Ｋ 。In this case, the light that is not absorbed by the semiconductor film 3, which is small in size, is also absorbed by the light absorption film 4, so that the semiconductor film 2.3 has the same temperature regardless of its size. The time constant of the delay in heat conduction due to the thickness of the transparent substrate 1 is w2BC/, where the thermal conductivity of the substrate 1 is A, the specific heat is B, the specific gravity is C1, and the thickness is W.
It is expressed as A, and if the matrix of the substrate 1 is quartz, then A=0.0
2 J/cm-set・K.
Ｂ＝１．ＯＪ／ｆ・Ｋ、Ｃ＝２．２ｔ／ｃｒＡでＷは通
常の半導体製造プロセスでは０．０３Ｃｒｎ程度なので
約０．１ｓｅｃとな９、ハロゲンランプアニールなどで
通常用いる１０８程度の加熱時間にくらべれば無視でき
る。B=1. OJ/f・K, C=2.2t/crA, W is about 0.03Crn in a normal semiconductor manufacturing process, so it is about 0.1 sec9, compared to the heating time of about 108 normally used in halogen lamp annealing etc. Can be ignored.
なおラングアニールは光吸収膜４の側から行なっても、
その反対側から行なってもどちらでもよい。Note that even if run annealing is performed from the light absorption film 4 side,
You can do it from the opposite side.
寸だ透明基板１としては石英に限らず、ザファイア、ス
ピネル等ももちろん使うことができる。The material for the transparent substrate 1 is not limited to quartz, but may also be made of zaphire, spinel, etc.
（発明の効果）
以上のように本発明によれば透明基板上の不透明膜にパ
ターン形状の差や密度の差があっても均一な短時間光加
熱が可能となる。(Effects of the Invention) As described above, according to the present invention, even if there is a difference in pattern shape or density in an opaque film on a transparent substrate, uniform short-time optical heating is possible.
第１図は従来法による試料の断面模式図で、１は透明基
板、２は大きな面積の被熱処理不透明膜、３は小さな面
積の被熱処理不透明膜である。
第２図は本発明による試料の断面模式図で、４は本発明
による光吸収膜である。
オＩ図FIG. 1 is a schematic cross-sectional view of a sample according to a conventional method, in which 1 is a transparent substrate, 2 is a large area of an opaque film to be heat treated, and 3 is a small area of an opaque film to be heat treated. FIG. 2 is a schematic cross-sectional view of a sample according to the present invention, and 4 is a light-absorbing film according to the present invention. O I diagram
Claims (1)
によって加熱する熱処理法において、光を吸収する膜を
前記基板のｌＩＪ記パターンのない側に全面に形成した
状態で光加熱を行なうことを特徴とする熱処理法。In a heat treatment method in which an opaque film pattern formed on a transparent substrate is heated by optical heating, optical heating is performed with a light-absorbing film formed entirely on the side of the substrate where the pattern is not provided. Characteristic heat treatment method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59002175A JPS60145629A (en) | 1984-01-10 | 1984-01-10 | Heat treating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59002175A JPS60145629A (en) | 1984-01-10 | 1984-01-10 | Heat treating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60145629A true JPS60145629A (en) | 1985-08-01 |
Family
ID=11522025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59002175A Pending JPS60145629A (en) | 1984-01-10 | 1984-01-10 | Heat treating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60145629A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63265425A (en) * | 1987-04-23 | 1988-11-01 | Seiko Epson Corp | Selective heating method of transparent substrate |
| JPS63265424A (en) * | 1987-04-23 | 1988-11-01 | Seiko Epson Corp | Selective heating method of transparent substrate |
| US5463975A (en) * | 1987-03-02 | 1995-11-07 | Canon Kabushiki Kaisha | Process for producing crystal |
| DE19544525C2 (en) * | 1994-11-30 | 1999-10-21 | New Japan Radio Co Ltd | Process for the heat treatment of a semiconductor body |
| US7218847B2 (en) * | 2003-10-24 | 2007-05-15 | Ushio Denki Kabushiki Kasiha | Heating unit for heating a workpiece with light-absorbing heat conducting layer |
-
1984
- 1984-01-10 JP JP59002175A patent/JPS60145629A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463975A (en) * | 1987-03-02 | 1995-11-07 | Canon Kabushiki Kaisha | Process for producing crystal |
| JPS63265425A (en) * | 1987-04-23 | 1988-11-01 | Seiko Epson Corp | Selective heating method of transparent substrate |
| JPS63265424A (en) * | 1987-04-23 | 1988-11-01 | Seiko Epson Corp | Selective heating method of transparent substrate |
| DE19544525C2 (en) * | 1994-11-30 | 1999-10-21 | New Japan Radio Co Ltd | Process for the heat treatment of a semiconductor body |
| US7218847B2 (en) * | 2003-10-24 | 2007-05-15 | Ushio Denki Kabushiki Kasiha | Heating unit for heating a workpiece with light-absorbing heat conducting layer |
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