JPH01236671A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPH01236671A JPH01236671A JP6418588A JP6418588A JPH01236671A JP H01236671 A JPH01236671 A JP H01236671A JP 6418588 A JP6418588 A JP 6418588A JP 6418588 A JP6418588 A JP 6418588A JP H01236671 A JPH01236671 A JP H01236671A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- semiconductor
- thin film
- compound semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000005253 cladding Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002912 waste gas Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 101100081684 Singulisphaera acidiphila (strain ATCC BAA-1392 / DSM 18658 / VKM B-2454 / MOB10) olsG gene Proteins 0.000 description 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- LJSQFQKUNVCTIA-UHFFFAOYSA-N diethyl sulfide Chemical compound CCSCC LJSQFQKUNVCTIA-UHFFFAOYSA-N 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- -1 dimethyl chloride Chemical compound 0.000 description 1
- YMUZFVVKDBZHGP-UHFFFAOYSA-N dimethyl telluride Chemical compound C[Te]C YMUZFVVKDBZHGP-UHFFFAOYSA-N 0.000 description 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＩＩ−ＶＩ族化合物半導体の埋め込み層を有す
る半導体レーザの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor laser having a buried layer of a II-VI compound semiconductor.
従来のＩＩ−ＶＩ族化合物半導体薄膜の形成法では、第
３図（ｄ）に示した様にマスク上にＩ［−ＶＩ族化合物
半導体の堆積か行われる為、これを除去する第３図（ｄ
）から第３図（ｅ）への工程が必要であった。従来行わ
れていた、マスク上のＩＩ−ＶＩ族化合物半導体の除去
する２つの方法を以下に述べる。In the conventional method of forming a II-VI group compound semiconductor thin film, the I[-VI group compound semiconductor is deposited on a mask as shown in FIG. d
) to FIG. 3(e) were necessary. Two conventional methods for removing Group II-VI compound semiconductors on a mask will be described below.
１．７第１・リングラフィ技術により、半導体ウェハー
表面上にエピタキシャル成長したｎ −ＶＩ族化合物半
導体薄膜だけを残し、マスク上に堆積したＩｔ −ＶＩ
族化会物半導体のみをエツチングにより除去する。1.7 First, by phosphorography technology, only the n-VI group compound semiconductor thin film epitaxially grown on the semiconductor wafer surface is left behind, and It-VI deposited on the mask.
Only the compound semiconductor is removed by etching.
２、半導体ウェハー表面にエピタキシャル成長した単結
晶ｎ −ＶＩ族化合物半導体と、マスク上に堆積した多
結晶のｎ−ｖｒ族化合物半導体とのエツチングレートの
違いにより、マスク上にｆｆ１ｍした■−■族化合物半
導体のみを選択的に除去する。2. Due to the difference in etching rate between the single crystal n-VI group compound semiconductor epitaxially grown on the semiconductor wafer surface and the polycrystalline n-vr group compound semiconductor deposited on the mask, the Selectively remove only semiconductors.
しかし、前述の従来技術ではマスク上に堆積したｎ−ｖ
ｉ族化合物半導体を除去する工程が必要となる為、歩留
りが低下するという問題点を有する。However, in the prior art described above, the n-v deposited on the mask
Since a process for removing the i-group compound semiconductor is required, there is a problem in that the yield is reduced.
そこで本発明は、この様な問題点を解決するもので、そ
の目的とするところは、マスク上に全く堆積物のない■
−■族化合物半導体薄膜のエピタキシャル成長法により
埋め込み層を形成する半導体レーザの製造方法を提供す
るところにある。Therefore, the present invention is intended to solve these problems, and its purpose is to completely eliminate deposits on the mask.
Another object of the present invention is to provide a method for manufacturing a semiconductor laser in which a buried layer is formed by an epitaxial growth method of a group compound semiconductor thin film.
本発明の半導体レーザの製造方法は、半導体基板上にク
ラッド層、活性層、クラッド層を積層する工程と、前記
半導体ウェハーにマスクを形成する工程と、前記マスク
を介して半導体ウェハーをエツチングする工程と、前記
マスクを用いて半導体表面に選択的に■−■族化合物半
導体薄膜を形成する工程を少なくとも含むことを特徴と
する。The method for manufacturing a semiconductor laser of the present invention includes the steps of stacking a cladding layer, an active layer, and a cladding layer on a semiconductor substrate, forming a mask on the semiconductor wafer, and etching the semiconductor wafer through the mask. The method is characterized in that it includes at least the step of selectively forming a thin film of a 1-2 group compound semiconductor on a semiconductor surface using the mask.
第１図（ａ）〜（ｂ）は本発明の実施例における半導体
レーザの製造工程を示す断面図であって、以下に半導体
レーザの製造工程を順に述べる。FIGS. 1(a) and 1(b) are cross-sectional views showing the manufacturing process of a semiconductor laser in an embodiment of the present invention, and the manufacturing process of the semiconductor laser will be described below in order.
ｒｔ型の伝導型を有するＧａＡｓ基板１上に、ｎ型Ａ、
Ｇ Ｏ，４Ｇａｏ、＊ Ａｓより成る下部クラッド層２
、ノンドープＡ １ ｏｌｓＧ ａ ｏ、 ｓｓＡ ｓ
より成る活性′Ｊ：層３、Ｐ型のＡｊ Ｏ，４Ｇ ａｏ
６Ａ ｓより成る上部コンタクト層４、Ｐ型のＧａＡｓ
より成るコンタクト層５をＭＯＣＶＤ法によりエピタキ
シャル成長し、該ウェハー上面にＳ ｉ Ｈ４を原料と
する熱ＣＶＤ法により５ｉ０２膜６を形成する。この状
態が第１図（ａ）である０次にフォトリングラフィ技術
により、不要な５１０２Ｍを沸酸系のエッチャントによ
り除去し、５ｉｎ２マスクを第１図（ｂ）の様に形成す
る。該５ｉ０２マスクを介して硫酸系のエッチャントに
よりコンタクト層及び上部クラッド層の一部をエツチン
グ除去し、第１図（ｃ）の様にする。この状態で第２図
に示したＭ ＯＣＶ Ｄ装置によりＳｉＯ２膜によりマ
スクされていない部分にＺｎ５ｅ薄膜７を選択的にエピ
タキシャル成長し第１図（ｄ）の様にする。On a GaAs substrate 1 having rt-type conductivity, n-type A,
Lower cladding layer 2 made of G O, 4Gao, *As
, non-doped A 1 olsG ao, ssA s
Active 'J: layer 3, P-type Aj O, 4G ao
Upper contact layer 4 made of 6A s, P-type GaAs
A contact layer 5 is epitaxially grown by MOCVD, and a 5i02 film 6 is formed on the upper surface of the wafer by thermal CVD using SiH4 as a raw material. In this state, as shown in FIG. 1(a), unnecessary 5102M is removed by 0-order photolithography technique using a hydrofluoric acid-based etchant, and a 5in2 mask is formed as shown in FIG. 1(b). The contact layer and a portion of the upper cladding layer are etched away using a sulfuric acid-based etchant through the 5i02 mask, as shown in FIG. 1(c). In this state, a Zn5e thin film 7 is selectively epitaxially grown on the portions not masked by the SiO2 film using the MOCVD apparatus shown in FIG. 2, as shown in FIG. 1(d).
第２図に示したＭＯＣＶＤ装置の各部の説明は以下の様
である。The description of each part of the MOCVD apparatus shown in FIG. 2 is as follows.
石英製横型反応管１０の内部にはグラファイト製サセプ
ター１１が置かれ、該サセプター上に基板１２が置かれ
る。前記石英製横型反応管の側面に配置されたコイル１
３に高周波を印加することにより、前記グラファイト製
サセプターを誘導加熱され基板の加熱が行われる。A graphite susceptor 11 is placed inside the quartz horizontal reaction tube 10, and a substrate 12 is placed on the susceptor. Coil 1 arranged on the side surface of the quartz horizontal reaction tube
By applying high frequency to 3, the graphite susceptor is heated by induction, and the substrate is heated.
基板温度のａｌす定は、グラファイト製サセプター中に
埋め込まれた熱電対１４により行う０石英製横型反応管
は排気ポンプ１５及び廃ガス処理系１６とバルブ１７及
び１８を介して接続されており、減圧及び常圧での成長
か可能となっている。■族原料としてのジメチル亜鉛１
つ及び■族原料であるジメチルセレン２０は、室温付近
で液体である為バブラー２１．２２の中に入っており、
水素ボンベ２３よつ水素′Ｊ？Ｉ製器２４を通してマス
フローコントローラ２５により流量を正確に制御された
水素をキャリアガスとして石英製横型反応管へ導入され
る。又、原料の供給量を一定に保つ為、前記バブラーは
恒温槽２６内に入っており、水素キャリアガスによるバ
ブリング時の温度を一定に閑っている。水素キャリアガ
スによりバブリングレジメチル亜鉛及びジメチルセレン
を含む原料ガスは、希釈の為の水素ガスと合流した後、
三方バルブ２７により石英製横型反応管内への導入或い
は廃ガス処理系への切り換えが行われる。第２図には横
型反応管を用いたＭＯＣＶＤ装置の構成を示したが、縦
型反応管を用いた場合も基本的構成は同じである６但し
縦型反応管の場合基板の回転機構を設けることにより、
得られる膜の膜厚及び膜質の均一性を確保する必要があ
る。The substrate temperature is controlled by a thermocouple 14 embedded in a graphite susceptor.The quartz horizontal reaction tube is connected to an exhaust pump 15 and a waste gas treatment system 16 via valves 17 and 18. Growth under reduced pressure or normal pressure is possible. ■Dimethylzinc 1 as a group raw material
Dimethyl selenium 20, which is a raw material for Groups 2 and 2, is in a bubbler 21.22 because it is liquid at around room temperature.
Hydrogen cylinder 23 hydrogen'J? Hydrogen, the flow rate of which is accurately controlled by a mass flow controller 25, is introduced as a carrier gas into a quartz horizontal reaction tube through an I-manufacturer 24. Further, in order to keep the supply amount of the raw material constant, the bubbler is placed in a constant temperature bath 26 to keep the temperature constant during bubbling with the hydrogen carrier gas. After bubbling with hydrogen carrier gas, the raw material gas containing dimethylzinc and dimethylselenium is combined with hydrogen gas for dilution.
A three-way valve 27 allows the gas to be introduced into the quartz horizontal reaction tube or switched to the waste gas treatment system. Figure 2 shows the configuration of an MOCVD apparatus using a horizontal reaction tube, but the basic configuration is the same even when a vertical reaction tube is used.6 However, in the case of a vertical reaction tube, a substrate rotation mechanism is provided. By this,
It is necessary to ensure uniformity in the thickness and quality of the resulting film.
次に上記ＭＯＣＶＤ装置を用いたＺｎ５ｅ薄膜の成長手
ＨＩＴを以下に説明する。第１図（ｃ）の様になった基
板をサセプター上に置き、排気ポンプにより反応管内を
排気する。次に水素精製器を通した水素ガスを反応管内
に導入する。その後コイルに高周波電圧を印加し１．基
板を成長温度まで昇温する。温度が安定したら、■族及
びＶＩ族原料であるジメチル亜鉛及びジメチルセレンを
反応管内に導入しＺｎ５ｅ薄膜の成長を開始する。成長
条件は以下に示す通りである。Next, HIT for growing a Zn5e thin film using the above MOCVD apparatus will be described below. The substrate as shown in FIG. 1(c) is placed on a susceptor, and the inside of the reaction tube is evacuated using an exhaust pump. Next, hydrogen gas that has passed through a hydrogen purifier is introduced into the reaction tube. After that, apply a high frequency voltage to the coil.1. The substrate is heated to the growth temperature. Once the temperature is stabilized, dimethylzinc and dimethylselenium, which are Group Ⅰ and Group VI raw materials, are introduced into the reaction tube to start growing a Zn5e thin film. The growth conditions are as shown below.
成長温度 ；５５０°Ｃ
成長圧力 ； ４０Ｔｏｒｒジメチル亜ｊ９
供給Ｍ ； １ ｘ １０−５１ｏｌ ／ｍｉｎジメ
チルセレン供給ｍ ； ４ ｘ １０−’ｒＱｏｌ ／
ｎ＋１ｎＶＩ／ｎ比 ；４
水素ガス流量 ； ｌｊ ／ｌｉｎ上記の成長条
件で、Ｚｎ５ｅ薄膜の成長速度は約１μｎ／ｈであった
。Ｚｎ５ｅ薄膜の厚さが、コンタクト層上面の高さと等
し７くなる様にＺｎ５ｅ薄膜７の成長を行う。Growth temperature: 550°C Growth pressure: 40 Torr dimethyl chloride
Supply M; 1 x 10-51 ol/minDimethylselenium supply m; 4 x 10-'rQol/
n+1nVI/n ratio; 4 Hydrogen gas flow rate; lj/lin Under the above growth conditions, the growth rate of the Zn5e thin film was about 1 μn/h. The Zn5e thin film 7 is grown so that the thickness of the Zn5e thin film is 7, which is equal to the height of the upper surface of the contact layer.
この時、５ｉ０２マスク上にはＺｎ５ｅの堆積物は全く
ない、この時の状態を示したのが第１図（ｄ）である。At this time, there was no deposit of Zn5e on the 5i02 mask, and FIG. 1(d) shows the state at this time.
その後５ｉ０２膜を沸酸系の工・ンチング液にて除去し
金属電極８を蒸着してレーザの構造ができる。この状態
が第１図（ｅ）である。Thereafter, the 5i02 film is removed using a hydrochloric acid-based etching solution, and a metal electrode 8 is deposited to form a laser structure. This state is shown in FIG. 1(e).
尚、前記したＺｎ５ｅ薄膜の成長条件以外でも、例えば
成長温度が５００°Ｃ以上６００℃以下、成長圧力がｌ
Ｑ Ｑ Ｔｏｒｒ以下、ＶＩ／ＩＩ比が６以下、又原
料としてジエチル亜鉛及びジエチルセレンを用いた場合
、或いはこれらの原料を組み合わせた場合においてもＺ
ｎ５ｅの選択エピタキシャル成長する。又、■族原料と
してジメチル硫黄、ジエチル硫黄、ジメチルテルル、ジ
エチルテルル及び■族原料としてジメチルカドミウム等
を用いることによりＺ ｎ Ｓ 、 Ｚ ｎ １’ ｅ
、 Ｃｄ Ｓ 、Ｃｄ Ｓ ｅ 、 Ｃｄ Ｔ ｅ等
のＩＩ−ＶＩ族化合物半導体薄膜の選択エピタキシャル
成長も可能である。In addition, there are conditions other than the growth conditions for the Zn5e thin film described above, such as a growth temperature of 500°C or more and 600°C or less, and a growth pressure of l.
Q Q Torr or less, VI/II ratio is 6 or less, and Z
Selective epitaxial growth of n5e. In addition, by using dimethyl sulfur, diethyl sulfur, dimethyl tellurium, diethyl tellurium, etc. as group Ⅰ raw materials and dimethyl cadmium as group Ⅰ raw materials, Z n S , Z n 1' e
It is also possible to selectively epitaxially grow II-VI group compound semiconductor thin films such as , CdS, CdSe, and CdTe.
以上述べた様に本発明の半導体レーザの製造方法によれ
ばｎ−ＶＩ族化合物半導体薄膜層か自己整合的に形成で
きる為以下の様な効果を有する。As described above, according to the method of manufacturing a semiconductor laser of the present invention, since the n-VI group compound semiconductor thin film layer can be formed in a self-aligned manner, it has the following effects.
（ａ）マスク上にＩＩ−ＶＩ族化合物半導体の堆積物が
全くない為、従来技術では必要であったマスク上の堆積
物を除去する工程が省略できる。(a) Since there is no deposit of the II-VI group compound semiconductor on the mask, the step of removing the deposit on the mask, which was necessary in the prior art, can be omitted.
（ｂ）（ａ）と関連し、工程が簡略化された分、歩留り
が大ｒｉに向上する。(b) In relation to (a), the yield is greatly improved due to the simplified process.
（Ｃ）（ａ）と関連し、従来技術においてマスク上の堆
積物をエツチング除去する際、エツチングされる必要の
ないＺ ｎ Ｓ ｅ ｒｔｊＪ或いはコンタク）・層が
エツチングされることがあったが、本発明においては不
要なエツチングは行われない為デバイスとしての性能及
び信顆性が向上する。(C) Related to (a), when removing deposits on a mask by etching in the prior art, a layer that does not need to be etched is sometimes etched. In the present invention, since unnecessary etching is not performed, the performance and reliability of the device are improved.
（ｄ）フォｉ・リソグラフィ技術を用いてパターン形成
がＩＩ−ＶＩ族化合物半導体よりも容易なマスク材を選
ぶことにより、微細加工が可能となる。(d) Fine processing becomes possible by selecting a mask material whose pattern formation is easier than that of II-VI group compound semiconductors using photolithography technology.
第１図（ａ）・〜（ｅ）は本発明における半導体レーザ
の製造工程を示す断面図。
第２図は本発明におけるＩＩ−ＶＩ族化合物半導体薄膜
を形成する為のＭ ＯＣＶ Ｄ装置の構成概略断面図。
第３図（ａ）〜（ｆ）は従来技術における半導体レーザ
の製造工程を示す断面図。
１・・・ｎ型ＧａＡｓ基板
２−−−ｎ型Ａ、Ｉ！０．４ Ｇａｏ６Ａｓ（下部クラ
ッド層）
３ ・・・ＡＮ ｏ、＋５Ｇａｏ、ａｓＡｓ４−−−
Ｐ型ＡＪ ｏ４Ｇａｏ６Ａｓ（上部クラッド層）
５・・・Ｐ型Ｇ５Ａｓ （コンタクト層）６・・・５ｉ
０２膜
７ ・ ・ ・ Ｚｎ５ｅ 薄ｊ摸
８・・・金属電極
９・・・Ｚｎ５ｅ堆積物
１０・・・石英製横型反応管
１１・・・グラファイト製サセプター
１２・・・基板
１３・・・コイル
１４・・・熱電対
１５・・・排気ポンプ
１６・・・廃ガス処理系
１７・・・バルブ
１８・・・バルブ
１つ・・・ジメチル亜鉛
２０・・・ジメチルセレン
２１・・・バブラー
２２・・・バブラー
２３・・・水素ボンベ
２４・・・水素精製器
２５・・・マスフローコントローラー
２６・・・恒温槽
２７・・・三方バルブ
２８・・・バルブ
以上
出願人 セイコーエプソン株式会社
代理人 弁理士 最 上 務（他１名）（）１１）
（ｅ／）（Ｃ，）
（久）（り
（ト〕 じ）（０）
（チ
）／ ＝、））６： Ｂ ！Ｉ ］Ｉ−１：）Ｌ ”ｊ
Ｆ 狭多う困FIGS. 1(a) to 1(e) are cross-sectional views showing the manufacturing process of a semiconductor laser according to the present invention. FIG. 2 is a schematic cross-sectional view of the configuration of an MOCVD apparatus for forming a II-VI group compound semiconductor thin film in the present invention. FIGS. 3(a) to 3(f) are cross-sectional views showing the manufacturing process of a semiconductor laser in the prior art. 1... n-type GaAs substrate 2---n-type A, I! 0.4 Gao6As (lower cladding layer) 3...AN o, +5Gao, asAs4---
P-type AJ o4Gao6As (upper cladding layer) 5...P-type G5As (contact layer) 6...5i
02 membrane 7 ・ ・ ・ Zn5e thin j model 8...Metal electrode 9...Zn5e deposit 10...Quartz horizontal reaction tube 11...Graphite susceptor 12...Substrate 13...Coil 14 ... Thermocouple 15 ... Exhaust pump 16 ... Waste gas treatment system 17 ... Valve 18 ... One valve ... Dimethyl zinc 20 ... Dimethyl selenium 21 ... Bubbler 22 ...・Bubbler 23...Hydrogen cylinder 24...Hydrogen purifier 25...Mass flow controller 26...Thermostatic chamber 27...Three-way valve 28...Valve and above Applicant Seiko Epson Co., Ltd. Agent Patent attorney Senior Executive (1 other person) ()11)
(e/) (C,) (ku) (ri (to) ji) (0)
(chi)/=,))6: B! I ] I-1:) L ”j
F cramped and troubled
Claims (1)
層する工程と、前記半導体ウェハーにマスクを形成する
工程と、前記マスクを介して半導体ウェハーをエッチン
グする工程と、前記マスクを用いて半導体表面に選択的
にII−VI族化合物半導体薄膜を形成する工程を少なくと
も含むことを特徴とする半導体レーザの製造方法。A step of laminating a cladding layer, an active layer, and a cladding layer on a semiconductor substrate, a step of forming a mask on the semiconductor wafer, a step of etching the semiconductor wafer through the mask, and a step of etching the semiconductor surface using the mask. 1. A method for manufacturing a semiconductor laser, the method comprising at least the step of selectively forming a II-VI group compound semiconductor thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63064185A JP2819556B2 (en) | 1988-03-17 | 1988-03-17 | Manufacturing method of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63064185A JP2819556B2 (en) | 1988-03-17 | 1988-03-17 | Manufacturing method of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01236671A true JPH01236671A (en) | 1989-09-21 |
| JP2819556B2 JP2819556B2 (en) | 1998-10-30 |
Family
ID=13250749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63064185A Expired - Lifetime JP2819556B2 (en) | 1988-03-17 | 1988-03-17 | Manufacturing method of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819556B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6284581A (en) * | 1985-10-08 | 1987-04-18 | Fujitsu Ltd | Semiconductor light-emitting device |
| JPS6316689A (en) * | 1986-07-09 | 1988-01-23 | Fujitsu Ltd | Semiconductor device |
-
1988
- 1988-03-17 JP JP63064185A patent/JP2819556B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6284581A (en) * | 1985-10-08 | 1987-04-18 | Fujitsu Ltd | Semiconductor light-emitting device |
| JPS6316689A (en) * | 1986-07-09 | 1988-01-23 | Fujitsu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2819556B2 (en) | 1998-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH10173288A (en) | Method for growing nitride-based iii-v compound semiconductor layer, and manufacture if nitride-based iii-v compound semiconductor substrate | |
| US7253085B2 (en) | Deposition methods | |
| US3941647A (en) | Method of producing epitaxially semiconductor layers | |
| US3661636A (en) | Process for forming uniform and smooth surfaces | |
| EP0241204B1 (en) | Method for forming crystalline deposited film | |
| JPH01270593A (en) | Method for forming compound semiconductor layer | |
| JPH03132016A (en) | Method of forming crystal | |
| JPH05251339A (en) | Semiconductor substrate and its manufacture | |
| JPH01236671A (en) | Manufacture of semiconductor laser | |
| JP3270704B2 (en) | Method for manufacturing semiconductor microstructure | |
| JPH04177825A (en) | Epitaxial growth method and chemical vapor growth device | |
| JP3157280B2 (en) | Method for manufacturing semiconductor device | |
| JPH0355438B2 (en) | ||
| JP3541332B2 (en) | Method for manufacturing semiconductor device | |
| JPH01274107A (en) | Production of optical waveguide | |
| JPH0575163A (en) | Manufacture of semiconductor device | |
| JPH04124814A (en) | Manufacture of soi substrate | |
| JPS63127530A (en) | Vapor growth of gallium arsenide epitaxial crystal | |
| JPH0597582A (en) | Method for depositing thin film of diamond | |
| JPH02191319A (en) | Method of forming soi structure | |
| JPS6362315A (en) | Formation of epitaxial layer film | |
| JPH0226373B2 (en) | ||
| JPH0443631A (en) | Growth method of compound semiconductor crystal and equipment therefor | |
| JPH01181535A (en) | Selectively growing ii-vi compound semiconductor thin film | |
| JPH02297924A (en) | Metal organic vapor growth method for compound semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070828 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080828 Year of fee payment: 10 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080828 Year of fee payment: 10 |