JPH01227401A - Non-linear voltage-dependent resistor - Google Patents
Non-linear voltage-dependent resistorInfo
- Publication number
- JPH01227401A JPH01227401A JP63052507A JP5250788A JPH01227401A JP H01227401 A JPH01227401 A JP H01227401A JP 63052507 A JP63052507 A JP 63052507A JP 5250788 A JP5250788 A JP 5250788A JP H01227401 A JPH01227401 A JP H01227401A
- Authority
- JP
- Japan
- Prior art keywords
- coating layer
- oxide
- insulating coating
- resin
- silicone resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001419 dependent effect Effects 0.000 title 1
- 239000011247 coating layer Substances 0.000 claims abstract description 29
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229920002050 silicone resin Polymers 0.000 claims abstract description 11
- 239000011787 zinc oxide Substances 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims abstract 3
- 239000011521 glass Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011737 fluorine Substances 0.000 abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011230 binding agent Substances 0.000 abstract description 4
- 229910000410 antimony oxide Inorganic materials 0.000 abstract description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 238000010304 firing Methods 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011268 mixed slurry Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は電気系統における過電圧保護装置に有用な電
圧非直線抵抗体、とくに酸化亜鉛を主成分とする電圧非
直線抵抗体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a voltage nonlinear resistor useful for overvoltage protection devices in electrical systems, and particularly to a voltage nonlinear resistor containing zinc oxide as a main component.
（従来の技術）
通常は絶縁体で過大な電流が流れたときに導電体として
作用する特性を備え、電圧安定素子やサージアブソーバ
等に広く利用される電圧非直線抵抗体は、例えば特開昭
５５−９８８０２号公報に開示されているようにその側
面に沿面放電の防止を目的として高抵抗層を、さらにそ
の表面に該高抵抗層の表面汚損の防止あるいは絶縁耐力
の向上を目的としてガラス層を設けるのが一般的であっ
た。と′ころで上記のような従来の素子ではとくにガラ
ス層を形成する際の熱処理に起因した素子の電気特性の
劣化やばらつきが不可避でありしかも ・長期間安定
した品質を確保するのが難しいという不利があった。(Prior art) Voltage nonlinear resistors, which are usually insulators and have the property of acting as conductors when an excessive current flows, and are widely used in voltage stabilizing elements, surge absorbers, etc. As disclosed in Japanese Patent No. 55-98802, a high resistance layer is provided on the side surface for the purpose of preventing creeping discharge, and a glass layer is further provided on the surface for the purpose of preventing surface staining of the high resistance layer or improving dielectric strength. It was common to have a However, with conventional devices such as those mentioned above, deterioration and variations in the electrical characteristics of the device are inevitable, especially due to heat treatment during the formation of the glass layer.In addition, it is difficult to ensure stable quality over a long period of time. There was a disadvantage.
この点に関する先行文献として例えば特開昭５６−５５
００４号公報あるいは特開昭５７−１８８４７６号公報
などが参照される。As a prior document on this point, for example, Japanese Patent Application Laid-Open No. 56-55
No. 004 or Japanese Unexamined Patent Publication No. 57-188476 are referred to.
（発明が解決しようとする課題）
上記公報に開示の技術、は、電圧非直線抵抗体の製造場
程において素子の側面に直接シリコン樹脂あるいはふ、
っ素樹脂、をコーティングすることによって、該素子の
特性や品質の向上を図ろうとするところにある。しかし
ながら素子の、側面にシリコンやふっ素の如き樹脂を単
にコーティングするだけでは、素子側面の絶縁性能が不
充分で長期間安定した品質を確保するのが難しいという
問題があった。(Problems to be Solved by the Invention) The technique disclosed in the above publication is a technique in which silicone resin or plastic is directly applied to the side of the element in the manufacturing process of voltage nonlinear resistors.
The aim is to improve the characteristics and quality of the element by coating it with fluorine resin. However, simply coating the side surfaces of the element with a resin such as silicon or fluorine has the problem that the insulation performance of the side surfaces of the element is insufficient and it is difficult to ensure stable quality over a long period of time.
この発明は上述したような従来問題を解消し、電気的緒
特性、とくに電圧非直線指数や雷サージ放電耐量の良好
な電圧非直線抵抗体を与えることが目的である。The object of the present invention is to solve the above-mentioned conventional problems and to provide a voltage nonlinear resistor with good electrical characteristics, particularly voltage nonlinearity index and lightning surge discharge resistance.
（課題を解決するための手段）
この発明は酸化亜鉛を主成分とする焼結体の電極形成面
を除く領域に被覆した絶縁被覆層の外周面に、シリコン
樹脂又はふっ素樹脂のコーティング層を備えてなる電圧
非直線抵抗体である。(Means for Solving the Problems) This invention includes a coating layer of silicone resin or fluororesin on the outer circumferential surface of an insulating coating layer that covers an area other than the electrode forming surface of a sintered body containing zinc oxide as a main component. It is a voltage non-linear resistor.
ここに電圧非直線抵抗体のＶｌ−Ａが４００ Ｖ／＋ｎ
＋ｎを超えるものを対象とする場合には、雷サージ放電
耐量の低下等を防止するために、絶縁被覆層とシリコン
又はふっ素樹脂のコーティング層の間にガラス層を設け
るのが有効である。Here, Vl-A of the voltage nonlinear resistor is 400 V/+n
When the target is a material exceeding +n, it is effective to provide a glass layer between the insulating coating layer and the silicone or fluororesin coating layer in order to prevent a decrease in lightning surge discharge resistance.
（作 用）
酸化亜鉛を主成分とする電圧非直線抵抗体の製造におい
て、絶縁被覆層の表面にさらにシリコン樹脂又はふっ素
樹脂のコーティング層を形成すると、素子側面の絶縁性
が改善され、長期的に安定した特性となるので、素子の
特性は改善され、品質のばらつきも小さく、しかも素子
のＶｌ、Ａ ４００Ｖ／ｍｍ未満、とくに２００ Ｖ／
ｍｍ程度の素子を対象とする場合においては、ガラス層
を形成する熱処理工程を省略できるのでこれに起因した
特性の劣化は皆無となる。(Function) When manufacturing a voltage nonlinear resistor whose main component is zinc oxide, if a coating layer of silicone resin or fluororesin is further formed on the surface of the insulating coating layer, the insulation properties of the side surfaces of the element will be improved and the long-term resistance will be improved. As a result, the characteristics of the element are improved and the variation in quality is small, and the Vl and A of the element are less than 400V/mm, especially 200V/mm.
In the case of a device with a size of about mm, the heat treatment step for forming the glass layer can be omitted, so there is no deterioration in characteristics caused by this.
以下、この発明に従う電圧非直線抵抗体の製造要領につ
いて説明する。Hereinafter, a method for manufacturing a voltage nonlinear resistor according to the present invention will be explained.
所定の粒度に調整した酸化亜鉛の主原料と所定粒度に調
整した酸化ビスマス、酸化コバルト、酸化マンガン、酸
化アンチモン、酸化クロム、酸化ケイ素、酸化ニッケル
等よりなる添加物および好ましくは銀を含むホウケイ酸
ビスマスガラスの所定量を混合する。次いでこれらの原
料粉末に対して所定量のポリビニルアルコール水溶液お
よび酸化アルミニウム源として硝酸アルミニウム溶液の
所定量を添加する。この混合操作は好ましくは乳化機を
用いる。The main raw material of zinc oxide adjusted to a predetermined particle size, additives such as bismuth oxide, cobalt oxide, manganese oxide, antimony oxide, chromium oxide, silicon oxide, nickel oxide, etc. adjusted to a predetermined particle size, and borosilicate preferably containing silver. Mix a predetermined amount of bismuth glass. Next, a predetermined amount of an aqueous polyvinyl alcohol solution and a predetermined amount of an aluminum nitrate solution as an aluminum oxide source are added to these raw material powders. This mixing operation preferably uses an emulsifying machine.
次に好ましくは２００ ｍｍｍ１（以下の真空度で減圧
脱気を行い混合泥漿を得る。混合泥漿の水分量は３０〜
３５ｗｔ％程度に、またその混合泥漿の粘度は１００Ｃ
ＩＩ±５０とするのが好ましい。Next, a mixed slurry is obtained by degassing under reduced pressure, preferably at a vacuum degree of 200 mm 1 (or less).The water content of the mixed slurry is 30 to
About 35wt%, and the viscosity of the mixed slurry is 100C.
It is preferable to set it to II±50.
次に得られた混合泥漿を噴霧乾燥装置に供給して平均粒
径５０〜１５０μｍ、好ましくは８０〜１２０μｍで、
水分量が０，５〜２． Ｑｗｔ％、より好ましくは１．
０〜ｌ、５ｗｔ％の造粒粉を造粒する。Next, the obtained mixed slurry is fed to a spray drying device so that the average particle size is 50 to 150 μm, preferably 80 to 120 μm,
Moisture content is 0.5-2. Qwt%, more preferably 1.
Granulated powder of 0 to 1 and 5 wt% is granulated.
次に得られた造粒粉を、成形工程において、成形圧力８
００〜１０００ｋｇ／ ＣＩＩｔの下で所定の形状に成
形する。そしてその成形体を昇降温度５０〜７０℃／ｈ
ｒで８００〜１０００℃、保持時間１〜５時間という条
件で仮焼成して結合剤を飛散除去する。Next, the obtained granulated powder was subjected to a molding process at a molding pressure of 8
It is molded into a predetermined shape under 00 to 1000 kg/CIIt. Then, the molded body is raised and lowered at a temperature of 50 to 70°C/h.
The binder is scattered and removed by calcination under the conditions of 800 to 1000[deg.] C. and a holding time of 1 to 5 hours.
次に、仮焼成した仮焼体の側面に絶縁被覆層を形成する
。絶縁被覆層は酸化ケイ素を５ｌＯ３に換算して５０〜
８０モル％、より好ましくは６０〜７０モル％、酸化亜
鉛をＺｎＯに換算して１０〜４０モル％、より好ましく
は２０〜３０モル％ 、酸化ビスマスを８１□０３ に
換算して１〜５モル％、残部酸化アンチモンの混合物に
有機結合剤としてエチレンセルロース、プチルカルビト
ーノベ酢酸ｎブチル等を加えた酸化物ペーストよりなる
ものとし、これを３０〜３００μｍの厚さで仮焼体側面
に塗布する。Next, an insulating coating layer is formed on the side surface of the calcined body. The insulating coating layer has a silicon oxide content of 50 to 5 lO3.
80 mol%, more preferably 60 to 70 mol%, zinc oxide 10 to 40 mol%, more preferably 20 to 30 mol%, bismuth oxide 1 to 5 mol% converted to 81□03 %, the remainder being antimony oxide, and an organic binder such as ethylene cellulose, butyl carbitone, n-butyl acetate, etc. added to the mixture, and this is applied to the side surface of the calcined body in a thickness of 30 to 300 μm. .
次にこれを昇降温速度３０〜６０℃／ｈｒ 、保持温度
１０００〜１３００℃、好ましくは１０００〜１２５０
℃で２〜７時間という条件で本焼成する。Next, this is heated at a temperature raising/lowering rate of 30 to 60°C/hr and a holding temperature of 1000 to 1300°C, preferably 1000 to 1250°C.
Main firing is performed at ℃ for 2 to 7 hours.
次に、従来法によればガラス粉末に有機結合剤としてエ
チルセルロース、ブチルカルピトール、酢酸ｎブチル等
を加えたガラスペーストを上記絶縁被覆層上に例えば５
０〜３００μｍの厚さに塗布し、それをさらに空気中で
昇降温速度１００〜２００℃／ｈｒ 。Next, according to the conventional method, a glass paste prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder is applied to the insulating coating layer, for example, 5
It is coated to a thickness of 0 to 300 μm, and then heated and cooled in air at a rate of 100 to 200°C/hr.
４００〜６００℃で０．５〜２時間という条件で熱処理
することによりガラス層を形成するが、この発明では、
シリコン樹脂又はふっ素樹脂を０゜３〜３．０ｍｍ好ま
しくは０．８〜２．０の厚さに塗布し、それに自然乾燥
させるかもしくは１００〜２００℃の温度域にて強制的
に乾燥させ、上記樹脂のコーティング層を形成する。こ
こで例えば素子のＶ、ｍ八が４００Ｖ／ｍｍを超える場
合は、上記絶縁被覆層の表面にまずガラス層を設け、そ
れからシリコン又はふっ素樹脂のコーティング層を設け
る。A glass layer is formed by heat treatment at 400 to 600°C for 0.5 to 2 hours, but in this invention,
Apply silicone resin or fluororesin to a thickness of 0.3 to 3.0 mm, preferably 0.8 to 2.0 mm, and dry naturally or forcefully in a temperature range of 100 to 200 ° C. A coating layer of the above resin is formed. Here, for example, when the V and m8 of the element exceed 400 V/mm, a glass layer is first provided on the surface of the above-mentioned insulating coating layer, and then a coating layer of silicon or fluorine resin is provided.
そして最後に得られた素体の両端面を平滑に研磨し、そ
こに例えばアルミニウムの如き材質になる電極を溶射に
より形成する。Finally, both end faces of the obtained element body are polished smooth, and electrodes made of a material such as aluminum are formed thereon by thermal spraying.
（実施例）
側面に絶縁被覆層を介してシリコン樹脂又はふっ素樹脂
のコーティング層（１，０ａｍ）を形成した直径４７ｍ
ｍ、厚さ２２．５＋ｎｍの電圧非直線抵抗体（Ｖ、、Ａ
：２００ｖ ／＋＋ｕａ ）と絶縁被覆層の表面にガラ
ス層を形成した同じく直径４７ｍｍ、厚さ２２．５＋ｎ
ｍの電圧非直線抵抗体をそれぞれ製造し、得られた素子
の電圧非直線指数（α）および雷サージ放電耐量につい
て調査した。その結果を表−１に示す。なお電圧非直線
指数αは、Ｉ＝ＫＶ″ （Ｉ：電流、Ｖ：電圧、Ｋ：比
例定数）の式に基づきＶ、、 ＡとＶ１００μＡとの値
から、また雷サージ放電耐量は、１１０にＡ１１２０Ｋ
Ａおよび１３０ＫＡの電流をそれぞれ４７１０μｓの電
流波形で２回繰り返し印加した後、素子が破壊しなかっ
た割合について示す。(Example) A diameter of 47 m with a coating layer (1.0 am) of silicone resin or fluororesin formed on the side surface via an insulating coating layer.
m, thickness 22.5+nm voltage nonlinear resistor (V,,A
:200v/++ua) and a glass layer formed on the surface of the insulating coating layer.The diameter is 47mm and the thickness is 22.5+n.
m of voltage nonlinear resistors were manufactured, and the voltage nonlinearity index (α) and lightning surge discharge resistance of the obtained devices were investigated. The results are shown in Table-1. The voltage non-linearity index α is calculated from the values of V, A and V100μA based on the formula I=KV'' (I: current, V: voltage, K: proportionality constant), and the lightning surge discharge withstand capacity is 110. A1120K
The graph shows the percentage of devices that were not destroyed after repeatedly applying currents of A and 130 KA twice with current waveforms of 4710 μs each.
表−１より明らかなようにこΦ発明に適合する電圧非直
線抵抗体は、電圧非直線指数および雷サージ放電耐量が
ともに良好であることが確認できた。As is clear from Table 1, it was confirmed that the voltage nonlinear resistor conforming to the Φ invention had good voltage nonlinearity index and lightning surge discharge resistance.
次に、側面の絶縁被覆層とシリコン樹脂又はふっ素樹脂
のコーティング層の間にガラス層を設けた直径：４７ｍ
ｍ、厚さ２２．５ｍｍ５ Ｖｌａ＾：４ＱＱＶ／ｍｍ以
上になる電圧非直線抵抗体を製造し、その素子の雷サー
ジ放電耐量について調査した。その結果比較例の調査結
果とともに表−２に示す。Next, a glass layer was provided between the side insulation coating layer and the silicone resin or fluororesin coating layer.Diameter: 47m
A voltage non-linear resistor having a voltage of 22.5 mm and a thickness of 22.5 mm5 Vla^:4QQV/mm or more was manufactured, and the lightning surge discharge resistance of the element was investigated. The results are shown in Table 2 along with the investigation results of comparative examples.
Ｖ、ｍＡが４００Ｖ／ｍｍを超える電圧非直線抵抗体の
製造に際しては、絶縁被覆層とガラス層の上にさらにシ
リコン又はふっ素樹脂のコーティング層を設けるのが有
効であることが明らかである。When manufacturing a voltage nonlinear resistor with V and mA exceeding 400 V/mm, it is clear that it is effective to further provide a coating layer of silicon or fluororesin on the insulating coating layer and the glass layer.
（発明の効果）
この発明によれば、電圧非直線指数や雷サージ放電耐量
が良好であり、しかも品質の安定した電圧非直線抵抗体
を得ることができる。(Effects of the Invention) According to the present invention, it is possible to obtain a voltage nonlinear resistor that has a good voltage nonlinearity index and lightning surge discharge capacity, and has stable quality.
特許出願人 日本碍子株式会社Patent applicant: Nippon Insulator Co., Ltd.
Claims (2)
領域に被成した絶縁被覆層の外周面に、シリコン樹脂又
はふっ素樹脂のコーティング層を備えてなる電圧非直線
抵抗体。1. A voltage nonlinear resistor comprising a silicone resin or fluororesin coating layer on the outer peripheral surface of an insulating coating layer formed on an area other than the electrode forming surface of a sintered body mainly composed of zinc oxide.
ティング層との間にガラス層を備える請求項１記載の電
圧非直線抵抗体。2. 2. The voltage nonlinear resistor according to claim 1, further comprising a glass layer between the insulating coating layer and the silicone resin or fluororesin coating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63052507A JPH01227401A (en) | 1988-03-08 | 1988-03-08 | Non-linear voltage-dependent resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63052507A JPH01227401A (en) | 1988-03-08 | 1988-03-08 | Non-linear voltage-dependent resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01227401A true JPH01227401A (en) | 1989-09-11 |
Family
ID=12916645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63052507A Pending JPH01227401A (en) | 1988-03-08 | 1988-03-08 | Non-linear voltage-dependent resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01227401A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943749B1 (en) * | 1969-10-02 | 1974-11-22 | ||
| JPS502707A (en) * | 1973-05-10 | 1975-01-13 | ||
| JPS57128904A (en) * | 1981-02-03 | 1982-08-10 | Mitsubishi Electric Corp | Method of forming protective film layer for nonlinear resistor |
-
1988
- 1988-03-08 JP JP63052507A patent/JPH01227401A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943749B1 (en) * | 1969-10-02 | 1974-11-22 | ||
| JPS502707A (en) * | 1973-05-10 | 1975-01-13 | ||
| JPS57128904A (en) * | 1981-02-03 | 1982-08-10 | Mitsubishi Electric Corp | Method of forming protective film layer for nonlinear resistor |
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