JPH01220850A - Electrode structure of semiconductor device - Google Patents

Electrode structure of semiconductor device

Info

Publication number
JPH01220850A
JPH01220850A JP63047291A JP4729188A JPH01220850A JP H01220850 A JPH01220850 A JP H01220850A JP 63047291 A JP63047291 A JP 63047291A JP 4729188 A JP4729188 A JP 4729188A JP H01220850 A JPH01220850 A JP H01220850A
Authority
JP
Japan
Prior art keywords
electrode
insulating layer
wire
film
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63047291A
Other languages
Japanese (ja)
Other versions
JP2527457B2 (en
Inventor
Kenji Toyosawa
健司 豊沢
Akizo Minamide
南出　彰三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63047291A priority Critical patent/JP2527457B2/en
Publication of JPH01220850A publication Critical patent/JPH01220850A/en
Application granted granted Critical
Publication of JP2527457B2 publication Critical patent/JP2527457B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable the copper wire bonding with high yield without generating cracks in an insulating layer under an electrode, by interposing a protective film to protect the insulating layer from the external force applied at the time of wire bonding, between a metal electrode and the insulating layer. CONSTITUTION:On a LOCOS oxide film 12 formed on a silicon substrate 11, a silicon nitride film 15 is formed as a protective film, on which an electrode 14, an insulating layer 13 and a passivation film 16 are formed, and a copper wire 17 is wire-bonded to the upper surface of the electrode 14. On a silicon substrate 61, an LOCOS oxide film 62 is formed, an insulating layer 63 and an electrode 64 are formed thereon, a passivation film 66 is formed leaving the upper part of the electrode 64, a protective film 68 is formed on the peripheral upper part of the electrode 64, and a copper wire 67 is bonded to a copper ball 65 which is joined to the surface of the electrode 64 via a part of the protective film 68. Further the electrode is made to contain metal whose hardness is higher than the electrode.

Description

【発明の詳細な説明】 （イ）産業上の利用分野 この発明はワイヤボンディングされる単導体装置の電極
部の構造に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to the structure of an electrode portion of a single conductor device to be wire bonded.

（ロ）従来の技術 従来ＩＣチップのような半導体装置の電極部においては
、半導体基板上にＰ　Ｓ　Ｇ　（ｐｈｏｓｐｈｏ　５ｉ
ｌｉｃａｔｅ　ｇｌａｓｓ）やＢ　Ｐ　Ｓ　Ｇ　（ｂｏ
ｒｏ　ｐｈｏｓｐｈｏ　ｓｉｌｉｃａｔｅｇｌａｓｓ）
のようなＣＶ　Ｄ　（ｃｈｅｍｉｃａｌ　ｖａｐｏｒ　
ｄｅｐｏｓｉｔｉｏｎ）絶縁膜または熱酸化シリコン膜
から成る絶縁層を介してアルミニウムまたはアルミニウ
ムシリコンから成る金属電極が形成され、その金属電極
にＡｕワイヤを用いてワイヤボンディングを行うように
している。(b) Conventional technology Conventionally, in the electrode part of a semiconductor device such as an IC chip, PSG (phospho 5i) is used on a semiconductor substrate.
licate glass) and B P S G (bo
ro phospho silicate glass)
CV D (chemical vapor) like
A metal electrode made of aluminum or aluminum silicon is formed through an insulating layer made of an insulating film or a thermally oxidized silicon film, and wire bonding is performed using an Au wire to the metal electrode.

（ハ）発明が解決しようとする課題 Ａｕワイヤを用いたワイヤボンディングにおいては、Ａ
ｕが柔らかく延性に優れているため、金属電極の下部に
存在する絶縁層は、ＰＳＧやＢＰＳＧというような機械
的に脆い層であっても、ワイヤボンディングによるクラ
ックの発生は見られなかった。しかしながら、銅ワイヤ
を用いてワイヤボンディングする場合には、銅ワイヤは
Ａｕワイヤに比べて硬く、また延性に劣るため、ワイヤ
ボンディング時に電極下部の絶縁層がクラックを生じた
り、ワイヤ先端のポールが金属電極中に入り込んで下部
絶縁層にクラックを発生させるという問題があった。(c) Problems to be solved by the invention In wire bonding using Au wire, A
Since u is soft and has excellent ductility, no cracks were observed in the insulating layer under the metal electrode due to wire bonding, even if it was a mechanically fragile layer such as PSG or BPSG. However, when wire bonding is performed using copper wire, copper wire is harder and less ductile than Au wire, so the insulating layer under the electrode may crack during wire bonding, or the pole at the tip of the wire may be made of metal. There was a problem that it penetrated into the electrode and caused cracks in the lower insulating layer.

この発明はこのような事情を考慮してなされたもので、
銅ワイヤを用いてワイヤボンディングを行っても、電極
下部の絶縁層がクラックを発生することのない半導体装
置の電極構造を提供するしのである。This invention was made in consideration of these circumstances,
The present invention provides an electrode structure for a semiconductor device in which the insulating layer under the electrode does not crack even when wire bonding is performed using copper wire.

（ニ）課題を解決するための手段 この発明は、半導体基板上に絶縁層を介して設けられた
金属電極に銅ワイヤを用いてボールボンディング法によ
りワイヤボンディングする電極構造において、ワイヤボ
ンデング時に加わる外力から絶縁層を保護する保護膜を
金属電極と絶縁層との間に介在させたことを特徴とする
半導体装置の電匪溝造である。保護膜は厚さ０．０５〜
０．６μｍのチッ化シリコン膜または厚さ０．１〜０．
６μｍのＴｉ−Ｗ膜であることが好ましい。(d) Means for Solving the Problems This invention provides an electrode structure in which a metal electrode provided on a semiconductor substrate via an insulating layer is wire-bonded by a ball bonding method using a copper wire. This is a semiconductor device characterized by interposing a protective film between a metal electrode and an insulating layer to protect the insulating layer from external forces. The thickness of the protective film is 0.05~
Silicon nitride film of 0.6 μm or thickness of 0.1-0.
Preferably, it is a 6 μm Ti-W film.

更にこの発明は、半導体基板上に絶縁層を介して設けら
れた金属電極に銅ワイヤを用いてボールボンディング法
によりワイヤボンディングする電極構造において、ワイ
ヤボンディング時の金属電極中に金属電極よりも硬度の
高い金属を含有させ、金属電極の硬度を増大させたこと
を特徴とする半導体装置の電極構造である。アルミニウ
ムやアルミニウム・シリコンの金属電極には、銅を含有
さ仕ることか好ましい。Furthermore, the present invention provides an electrode structure in which a copper wire is wire-bonded to a metal electrode provided on a semiconductor substrate through an insulating layer by a ball bonding method. This is an electrode structure for a semiconductor device characterized by containing a high amount of metal and increasing the hardness of the metal electrode. It is preferable that aluminum or aluminum-silicon metal electrodes contain copper.

またこの発明は、半導体基板上に絶縁層を介して設けら
れｆ二金属電極に銅ワイヤを用いてホールホンディング
法によりワイヤボンディングする電極構造において、金
属電極の変形を抑制する保護膜を銅ワイヤ先端のポール
部と金属電極との接合面に部分的に介在さ仕たことを特
徴とする半導体装置の電極構造である。この保護膜とし
ては電極近傍のパッシベーション膜等の絶縁層を金属電
極上に延出して形成しても良いし、Ｔｉ−Ｗ膜またはＷ
膜を別に設けるようにしてもよい。The present invention also provides an electrode structure in which a copper wire is used as a metal electrode provided on a semiconductor substrate via an insulating layer and wire bonded by a hole bonding method. This is an electrode structure for a semiconductor device, characterized in that it is partially interposed at the joint surface between the pole portion at the tip and the metal electrode. This protective film may be formed by extending an insulating layer such as a passivation film near the electrode onto the metal electrode, or a Ti-W film or W film.
A separate membrane may be provided.

（ホ）作用 金属電極と絶縁層との間に保護膜を設けた場合には、ワ
イヤボンディング時に金属電極に加わる外力が絶縁層ま
で伝達されないので、絶縁層が機械的にもろい層であっ
てもクラックを生じることがほとんど無い。また、金属
電極中に金属電極よりも硬度の高い金属を含有させた場
合には、金属電極の硬度が増大しワイヤボンディング時
に金属電極が変形することがないので、その下部の絶縁
層に加えられるワイヤボンディング時の外力が金属電極
でさえぎられて絶縁層のクラックの発生が防止される。(e) If a protective film is provided between the working metal electrode and the insulating layer, the external force applied to the metal electrode during wire bonding will not be transmitted to the insulating layer, even if the insulating layer is mechanically fragile. Almost no cracks occur. In addition, when a metal with higher hardness than the metal electrode is contained in the metal electrode, the hardness of the metal electrode increases and the metal electrode is not deformed during wire bonding. External force during wire bonding is blocked by the metal electrode, preventing cracks from occurring in the insulating layer.

更に、ワイヤ先端のポール部と金属電極との接合面に部
分的に保護膜を設けた場合には、ワイヤボンディング時
の衝撃が保護膜によっ一緩和されワ、イヤ先端のホール
部が保護膜で支持され金属電極内に入り込むことが抑制
されるので金属電極下部の絶縁層のクラックの発生率が
低減される。Furthermore, if a protective film is partially provided on the bonding surface between the pole part at the tip of the wire and the metal electrode, the impact during wire bonding is alleviated by the protective film, and the hole part at the tip of the ear is covered with the protective film. Since the metal electrode is supported by the metal electrode and is prevented from entering the metal electrode, the occurrence rate of cracks in the insulating layer under the metal electrode is reduced.

（へ）実施例 以下、図面に示す実施例に基づいて、この発明を詳述す
る。これによって、この発明が限定されるものではない
。(f) Examples The present invention will now be described in detail based on examples shown in the drawings. This invention is not limited by this.

第１図に示す実施例において、ｌはシリコン基板、２は
基ｔｉｔ上に形成された厚さ０．７μｍのＬＯＧ　ＯＳ
　（ｌｏｃａｌ　ｏｘｉｄａｔｉｏｎ　ｏｆ　５ｉｌｉ
ｃｏｎ）酸化膜、３はＬＯＧＯＳ酸化膜２の上に形成さ
れた厚さ０．５ｐｍのＰＳＧ、ＢＰＳＧ又は５ｉｆｔか
ら成る絶縁層、４はアルミ・シリコンを用いて形成され
た厚さ１．０μｍの電極、５は電極４と絶縁層３との間
に保護膜としてＣＶＤ法で形成された厚さ０．０５〜０
６μｍのチッ化シリコン膜、６は厚さ０．６μｍのバッ
ソベーンヨン膜、７は電極４にボールボンディング法に
よってワイヤボンディングされた直径３０μｍの銅ワイ
ヤである。In the embodiment shown in FIG. 1, l is a silicon substrate, and 2 is a 0.7 μm thick LOG OS formed on a substrate.
(local oxidation of 5ili
con) oxide film, 3 is an insulating layer made of PSG, BPSG, or 5ift with a thickness of 0.5 pm formed on the LOGOS oxide film 2, 4 is an insulating layer with a thickness of 1.0 μm formed using aluminum silicon. The electrode 5 is formed as a protective film between the electrode 4 and the insulating layer 3 by the CVD method and has a thickness of 0.05 to 0.
A 6 μm silicon nitride film, 6 a 0.6 μm thick basso venillon film, and 7 a 30 μm diameter copper wire wire-bonded to the electrode 4 by ball bonding.

第２図に示す実施例において、シリコン基板１１上に形
成された厚さ０．７μｍのＬＯＧＯＳ酸化膜１２上に、
ＣＶＤ法で７さ０．０５〜ｆｌ　、　ｈｍのチッ化シリ
コン膜１５が保護膜として形成される。その上に厚さ１
．０μｍの電極１４が形成され、更に、厚さ０．５μｍ
のＰＳＧＳＢＰＳＧ又は５ｉｆｔから成る絶縁層１３及
び厚さ０．６μｍのパッシベーション膜１６が形成され
、電極ｒ４の上面に銅ワイヤ１７がボールボンディング
法によりワイヤボンディングされる。In the embodiment shown in FIG. 2, on a LOGOS oxide film 12 with a thickness of 0.7 μm formed on a silicon substrate 11,
A silicon nitride film 15 with a thickness of 0.05-fl, hm is formed as a protective film by the CVD method. On top of that, the thickness is 1
．． An electrode 14 with a thickness of 0 μm is formed, and an electrode 14 with a thickness of 0.5 μm is formed.
An insulating layer 13 made of PSGSBPSG or 5ift and a passivation film 16 with a thickness of 0.6 μm are formed, and a copper wire 17 is wire-bonded to the upper surface of the electrode r4 by a ball bonding method.

第３図に示す実施例において、シリコン基板２１上に厚
さ０．１＃Ｉｍのり、０ＣＯＳ酸化膜２２が形成され、
更にその上に厚さ０．５μｍのＰＳＧＳＢＰＳＧ又はＳ
ｉｎ、から成る絶縁層２３が形成され、その上に保護膜
として厚さ０．１〜０．６μｍ／Ｊ）Ｔｉ−Ｗ膜２５が
形成される。Ｔｉ−’ｖＶ膜２５の真上にアルミニウム
・シリコンから成る厚さ１．０μｍの電極２４が形成さ
れ、電極２４の上部以外は厚さ０．６μｍのパッシベー
ション膜２６によって被覆される。In the embodiment shown in FIG. 3, a 0.1 #Im thick 0COS oxide film 22 is formed on a silicon substrate 21,
Furthermore, on top of that, 0.5 μm thick PSGSBPSG or S
An insulating layer 23 consisting of In, is formed, and a Ti--W film 25 with a thickness of 0.1 to 0.6 μm/J) is formed thereon as a protective film. An electrode 24 made of aluminum silicon and having a thickness of 1.0 μm is formed directly above the Ti-'vV film 25, and the area other than the upper part of the electrode 24 is covered with a passivation film 26 having a thickness of 0.6 μm.

そして、電極２４の上面には直径３０ｕｍの銅ワイヤ２
７がボールボンディング法によってワイヤボンディング
される。A copper wire 2 with a diameter of 30 um is placed on the upper surface of the electrode 24.
7 is wire-bonded by the ball bonding method.

第４図に示す実施例においてはシリコン基板３１の上に
厚さ０．１μｒｎのＬＯＧＯＳ酸化膜３２が形成され、
その上に保護膜として厚さ０．１〜０，６μｍのＴｉ−
Ｗ膜３５とＰ　Ｓ　Ｇ、Ｂ　Ｐ　Ｓ　Ｇ又はＳｉＯ□か
ら成る厚さ０．５μｍの絶縁層３３が形成される。In the embodiment shown in FIG. 4, a LOGOS oxide film 32 with a thickness of 0.1 μrn is formed on a silicon substrate 31.
On top of that, as a protective film, a Ti-
A 0.5 μm thick insulating layer 33 made of W film 35 and PSG, BPSG, or SiO□ is formed.

そしてＴ　ｉ−Ｗ膜３５の真上にはアルミニウム・シリ
コンから成る厚さｌ、０μｍの電極３４が形成され、ｌ
ｌ１３４以外には厚さ０．６μｍのパッシベーション膜
３６が形成される。そして、電極３４の上面には直径３
０μｍの銅ワイヤがボールボンディング法によりワイヤ
ボンディングされる。Immediately above the Ti-W film 35, an electrode 34 made of aluminum silicon and having a thickness l and 0 μm is formed.
A passivation film 36 with a thickness of 0.6 μm is formed in areas other than 1134. The upper surface of the electrode 34 has a diameter of 3 mm.
A 0 μm copper wire is wire-bonded by a ball bonding method.

第５図に示す実施例においては、シリコン基板４！の上
に厚さ０．１μｍのＬＯＧＯ９酸化膜４２が形成され、
更にその上に厚さ０．５μｍのＰＳＧ、ＢＰＳＧまたは
５ｉＯｚから成る絶縁層４３が形成され、その上面にア
ルミニウム・シリコンに銅を含有さけた金属（Ａ　Ｉ　
−１％５ｉ−２％Ｃｕ）から成る′＠睡４４が形成され
、電極４４の上面を残して厚さ０６μｍのパッシベーシ
ョン膜４６が形成される。そして、′電極４４の上面に
は直径３０μｍの銅ワイヤ４７の銅ボール４５がボール
ボンディング法によってワイヤボンディングされる。In the embodiment shown in FIG. 5, the silicon substrate 4! A LOGO9 oxide film 42 with a thickness of 0.1 μm is formed on the
Furthermore, an insulating layer 43 made of PSG, BPSG, or 5iOz with a thickness of 0.5 μm is formed on the insulating layer 43, and a metal (A I
-1%5i-2%Cu) is formed, and a passivation film 46 with a thickness of 06 μm is formed leaving the upper surface of the electrode 44. Then, a copper ball 45 of a copper wire 47 having a diameter of 30 μm is wire-bonded to the upper surface of the 'electrode 44 by a ball bonding method.

第６図に示す実施例においては、シリコン基板５１の上
に厚さ０．７μｍのＬＯＧＯＳ酸化膜５２が形成され、
更にその上に厚さ０，５μｍのＰＳＧ、Ｂ’ＰＳＧ又は
ＳｉＯｘから成る絶縁層５３が形成される。その上に厚
さ１　、０４ｍのアルミニウム・シリコンから成る電極
５４が形成され、その上から厚さ０．６μｍのパッシベ
ーション膜５６か形成される。In the embodiment shown in FIG. 6, a LOGOS oxide film 52 with a thickness of 0.7 μm is formed on a silicon substrate 51.
Furthermore, an insulating layer 53 made of PSG, B'PSG or SiOx with a thickness of 0.5 μm is formed thereon. An electrode 54 made of aluminum and silicon with a thickness of 1.04 m is formed thereon, and a passivation film 56 with a thickness of 0.6 μm is formed thereon.

そして、パッシベーション膜５６は、電極５４の上部周
辺を覆って形成されるので、直径３０μｍの銅ワイヤ５
７がワイヤボンデングされるきき、つまり銅ボール５５
が電極５４に接合される時、パッシベーション膜５６の
一部が銅ボール５５と電極５４の間に部分的に介在する
ことになる第７図に示す実施例においては、シリコン基
板６１の上に厚さＬ１μｍのＬＯＧＯＳ酸化膜６２が形
成され、更にその上に厚さ０．５μｍのＰＳＧ、ＢＰＳ
ＧまたはＳ　ｉ　Ｏ２から伎る絶縁層６３が形成される
。さらに、その絶縁層６３の上にアルミニウム・シリ゛
コンから成る厚さ１．０μｍの電極６４か形成され、更
にその上から電極６４の上面を残しテ厚さＯ，ｌＢｚｍ
のパッシベーション膜６６が形成される。そして、電極
６４の周縁上部には保護膜６８が形成され、電極６４の
上面に直径３０μｍの銅ワイヤ６７がワイヤボンディン
グされると、銅ボール６５は保護膜６８を部分的に介し
て電極６４の上面に接合されることになる。Since the passivation film 56 is formed to cover the upper periphery of the electrode 54, the copper wire 56 with a diameter of 30 μm
7 is wire bonded, that is, the copper ball 55
In the embodiment shown in FIG. 7, a portion of the passivation film 56 is partially interposed between the copper ball 55 and the electrode 54 when the copper ball 55 is bonded to the electrode 54. A LOGOS oxide film 62 with a thickness of L1 μm is formed, and PSG and BPS with a thickness of 0.5 μm are further formed on it.
An insulating layer 63 made of G or SiO2 is formed. Further, an electrode 64 made of aluminum silicon and having a thickness of 1.0 μm is formed on the insulating layer 63, and then an electrode 64 with a thickness of O, 1Bzm is formed on top of the insulating layer 63, leaving the upper surface of the electrode 64.
A passivation film 66 is formed. A protective film 68 is formed on the upper peripheral edge of the electrode 64, and when a copper wire 67 with a diameter of 30 μm is wire-bonded to the upper surface of the electrode 64, the copper ball 65 is attached to the electrode 64 through the protective film 68. It will be joined to the top surface.

第８図は第６図及び第７図の要部上面図であり、ｉｔ極
と銅ボールとの間に部分的に介在するパッシベーション
膜５６または保護膜６８の形状例を示すものである。な
お、電極４，１４，２４．３４゜５４．６４にはＡ１−
１％Ｓｉを使用した。FIG. 8 is a top view of the essential parts of FIGS. 6 and 7, and shows an example of the shape of the passivation film 56 or the protective film 68 partially interposed between the IT electrode and the copper ball. In addition, A1-
1% Si was used.

第１〜４図に示す実施例においては、電極と電極下部の
絶縁層との間に保護膜を設けたため、ワイヤボンディン
グ時に電極に加わる外力が絶縁層まで伝達され、絶縁層
が機械的にもろい層であってらクラックを生じることが
ほとんど無い。まｆ六第５図に示す実施例によれば、電
極中ｊこ電圧よｊンら硬度の高い金属を含有させたので
、電極の硬度が増大しワイヤボンディング時に電極か変
形す４ことがなく、その下部の絶縁層に加えられるワイ
ヤボンディング時の外力が金属電極でさえぎられて電極
下部の絶縁層のクラックの発生が防止される。更に、第
６〜７図に示す実施例によれば、ワイヤ先端のボール部
と電極との接合面に部分的に保護膜を設けたため、ワイ
ヤボンディング時の衝撃が保護膜によって緩和され、ワ
イヤ先端のボール部が保護膜で支持され電極内に入り込
むことが抑制されろことにより、電極下部の絶縁層のク
ラックの発生率が低減される。In the embodiments shown in Figures 1 to 4, a protective film is provided between the electrode and the insulating layer below the electrode, so that the external force applied to the electrode during wire bonding is transmitted to the insulating layer, making the insulating layer mechanically fragile. Although it is a layer, cracks hardly occur. According to the embodiment shown in FIG. 5, since the electrode contains a metal with high hardness, including the voltage, the hardness of the electrode increases and the electrode does not deform during wire bonding. The external force applied to the insulating layer below the wire bonding is blocked by the metal electrode, thereby preventing the occurrence of cracks in the insulating layer below the electrode. Furthermore, according to the embodiment shown in FIGS. 6 and 7, since a protective film is partially provided on the bonding surface between the ball part of the wire tip and the electrode, the impact during wire bonding is alleviated by the protective film, and the wire tip The ball portion is supported by the protective film and is prevented from penetrating into the electrode, thereby reducing the incidence of cracks in the insulating layer below the electrode.

これらの実施例の電極構造におけるクラック発生の有無
を従来例と比較したが、従来の電極構造においてはクラ
ック発生率が７０〜９０％であるのに対し、これらの実
施例のクラック発生率はほとんど０％であることが確認
された。なお、クラック発生有無の確認は、ワイヤボン
ディングされた銅ワイヤを硝酸で除去した後、ＮａＯＨ
水溶液で電極をエツチングし、更に、絶縁層のクラック
直下の基ｖＬ（シリコン単結晶）をエツチングし、クラ
ックを顕在化して、目視によってクラックの存在を確認
する方法を用いた。The presence or absence of cracks in the electrode structures of these examples was compared with conventional examples, and while in the conventional electrode structures the crack generation rate was 70 to 90%, the crack generation rate in these examples was almost 70% to 90%. It was confirmed that it was 0%. To check whether cracks have occurred, remove the wire-bonded copper wire with nitric acid, and then remove it with NaOH.
A method was used in which the electrodes were etched with an aqueous solution, and then the base VL (silicon single crystal) directly under the cracks in the insulating layer was etched to expose the cracks, and the presence of the cracks was visually confirmed.

（ト）発明の効果 この発明によれば、電極下部の絶縁層にクラックが発生
することがなく、歩留りの高い銅ワイヤボンディングが
可能となり、安価で信頼性の高い半導体装置を得ること
ができる。(G) Effects of the Invention According to the present invention, cracks do not occur in the insulating layer below the electrode, copper wire bonding can be performed with a high yield, and an inexpensive and highly reliable semiconductor device can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ないし第７図はこの発明の実施例を示す縦断面図
、第８図は第６図及び第７図に示す実施例の要部上面図
である。 １、ＩＩ、２１，３１，４１，５１．６１・・・・・・
基板、 ２、＋２．２２．３２，４２．５２．６２・・・・・・
ＬＯＧＯＳ酸化膜、 ３．１３，２３，３３，４３．５３．６３・・・・・・
絶縁層、 ６．１６，２６，３６，４６，５６．６６・・・・・・
パッシベーション膜、 ４、＋４．２４，３４．４４，５４．６４・・・・・・
電極、 ７．１？、２７．３７．４７．５７．６７・・・・・・
銅ワイヤ、 ５．１５・・・・・・チッ化シリコン膜、２５　、　３
５−−−−＝　Ｔ　ｉ　−ＷＭ。 ６８・・・・・・保護膜。 第　１　図 第　３　図 ！　４　図 第　５　図1 to 7 are longitudinal cross-sectional views showing embodiments of the present invention, and FIG. 8 is a top view of essential parts of the embodiment shown in FIGS. 6 and 7. 1, II, 21, 31, 41, 51.61...
Board, 2, +2.22.32, 42.52.62...
LOGOS oxide film, 3.13, 23, 33, 43.53.63...
Insulating layer, 6.16, 26, 36, 46, 56.66...
Passivation film, 4, +4.24, 34.44, 54.64...
Electrode, 7.1? , 27.37.47.57.67...
Copper wire, 5.15...Silicon nitride film, 25, 3
5----= T i -WM. 68...Protective film. Figure 1 Figure 3! Figure 4 Figure 5

Claims (1)

【特許請求の範囲】 １、半導体基板上に絶縁層を介して設けられた金属電極
に銅ワイヤを用いてボールボンディング法によりワイヤ
ボンディングする電極構造において、ワイヤボンデング
時に加わる外力から絶縁層を保護する保護膜を金属電極
と絶縁層との間に介在させたことを特徴とする半導体装
置の電極構造。 ２、半導体基板上に絶縁層を介して設けられた金属電極
に銅ワイヤを用いてボールボンディング法によりワイヤ
ボンディングする電極構造において、ワイヤボンディン
グ時の金属電極中に金属電極よりも硬度の高い金属を含
有させ、金属電極の硬度を増大させたことを特徴とする
半導体装置の電極構造。 ３、半導体基板上に絶縁層を介して設けられた金属電極
に銅ワイヤを用いてボールボンディング法によりワイヤ
ボンディングする電極構造において、金属電極の変形を
抑制する保護膜を銅ワイヤ先端のボール部と金属電極と
の接合面に部分的に介在させたことを特徴とする半導体
装置の電極構造。[Claims] 1. In an electrode structure in which copper wire is wire-bonded to a metal electrode provided on a semiconductor substrate via an insulating layer by a ball bonding method, the insulating layer is protected from external force applied during wire bonding. An electrode structure for a semiconductor device, characterized in that a protective film is interposed between a metal electrode and an insulating layer. 2. In an electrode structure in which a copper wire is wire-bonded to a metal electrode provided on a semiconductor substrate through an insulating layer by a ball bonding method, a metal with a higher hardness than the metal electrode is used in the metal electrode during wire bonding. An electrode structure for a semiconductor device, characterized in that the hardness of the metal electrode is increased by containing the metal electrode. 3. In an electrode structure in which a copper wire is wire-bonded to a metal electrode provided on a semiconductor substrate through an insulating layer by a ball bonding method, a protective film that suppresses deformation of the metal electrode is attached to the ball portion of the tip of the copper wire. An electrode structure for a semiconductor device, characterized in that the electrode structure is partially interposed at a bonding surface with a metal electrode.
JP63047291A 1988-02-29 1988-02-29 Electrode structure of semiconductor device Expired - Fee Related JP2527457B2 (en)

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JP2527457B2 JP2527457B2 (en) 1996-08-21

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Cited By (15)

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US5288661A (en) * 1989-10-17 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having bonding pad comprising buffer layer
DE4019848A1 (en) * 1989-10-17 1991-04-25 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE WITH A CONNECTING SURFACE HAVING A BUFFER LAYER
US5525546A (en) * 1991-01-29 1996-06-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing thereof
DE4201792A1 (en) * 1991-01-29 1992-08-06 Mitsubishi Electric Corp Improved corrosion-resistant plastic encapsulated integrated circuit - having elastic insulating layer on top of the passivation layer of the side sealing round the ball and and preventing moisture ingress
US5430329A (en) * 1991-01-29 1995-07-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with bonding pad electrode
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JPH06204284A (en) * 1993-01-08 1994-07-22 Nec Yamagata Ltd Semiconductor device
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EP2685511A4 (en) * 2011-03-10 2014-08-13 Dowa Electronics Materials Co Semiconductor light-emitting element and method of manufacturing thereof
US9172005B2 (en) 2011-03-10 2015-10-27 Dowa Electronics Materials Co., Ltd. Semiconductor light emitting diode having a contact portion and a reflective portion
JP2014082367A (en) * 2012-10-17 2014-05-08 Nippon Micrometal Corp Power semiconductor device
JP2017132163A (en) * 2016-01-29 2017-08-03 株式会社沖データ Light-emitting element unit, exposure device, image formation device, and manufacturing method for light-emitting element unit
WO2018037736A1 (en) * 2016-08-22 2018-03-01 三菱電機株式会社 Semiconductor device
JPWO2018037736A1 (en) * 2016-08-22 2019-01-31 三菱電機株式会社 Semiconductor device

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