JPH01220404A - Thin film thermistor - Google Patents
Thin film thermistorInfo
- Publication number
- JPH01220404A JPH01220404A JP4622788A JP4622788A JPH01220404A JP H01220404 A JPH01220404 A JP H01220404A JP 4622788 A JP4622788 A JP 4622788A JP 4622788 A JP4622788 A JP 4622788A JP H01220404 A JPH01220404 A JP H01220404A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- pair
- glass
- coating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 24
- 239000011521 glass Substances 0.000 claims abstract description 27
- 239000011247 coating layer Substances 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000012298 atmosphere Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、耐熱性に優ｎｆこ薄膜サーミスタに関するも
ので、この薄膜サーミスタは、電気オーブンなどの温度
センサとして利用される。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film thermistor with excellent heat resistance, and this thin film thermistor is used as a temperature sensor for electric ovens and the like.
従来の技術
薄膜サーミスタは、例えば、長井能、ナショナルテクニ
カルレポート（Ｎａｔｌｏｎａｌ Ｔｅｃｈｎｉｃａｌ
Ｒｅｐｏｒｔ）ｖｏｌ、２９（１９８３）Ｐｙ１４５に
示さｎているように、アルミナなどの平板状アルミナ基
板の一方の表面に形成さｎｆこ一対の電極膜と前記一対
の電極膜表面に感温抵抗体被膜として形成さｎだ炭化硅
素被膜（以下ＳＩＣ膜と表す）と、前記一対の電極膜に
そｎぞｎ接続される白金（Ｐｔ）線などのリード線及び
、前記平板状アルミナ基板の一方の表面に形成される硝
子被覆層から構成される。Conventional technology thin film thermistors are described, for example, in Noh Nagai's National Technical Report.
Report) vol., 29 (1983) Py145, a pair of electrode films formed on one surface of a flat alumina substrate such as alumina and a temperature-sensitive resistor coating on the surface of the pair of electrode films. A silicon carbide film (hereinafter referred to as SIC film) formed as a silicon carbide film, lead wires such as platinum (Pt) wires connected to the pair of electrode films, and one surface of the flat alumina substrate. It consists of a glass coating layer formed on
実用に供する場合、一対の電極膜として、Ａｕ−ｐｔ厚
膜電極膜が用いらｎる。そして、前記電極膜にＰｔリー
ド線を溶接接続しｒこ後、ＳｉＣ膜を結露、汚ｎなどの
外部環境から保護するｒこめ、硝子被Ｎ層が形成さｎる
。For practical use, an Au-pt thick film electrode film is used as the pair of electrode films. After welding and connecting the Pt lead wire to the electrode film, a glass coating layer is formed to protect the SiC film from external environments such as dew condensation and dirt.
発明が解決しようとする課題
従来、前述の薄膜サーミスタの耐熱温度は空気中で、４
００℃であっｒこ。ところが、庫内壁面に付着しｒこ油
などの食品の汚ｎを、高温で焼き切る機能を備えｒこ電
気オーブンなどの場合、庫内温度は、食品汚ｎを焼き切
るｆこめに、約５００°Ｃまでに加熱さｎる。このｒこ
め、薄膜サーミスタは、ＳＯＯ″Ｃ以上の耐熱性を要求
さｎる。しかし、従来の薄膜サーミスタの耐熱性は前述
の通り４００“Ｃであり、薄膜サーミスタ素子が４００
″Ｃ以上の高温に曝さｎｒコとき、時間経過と共に抵抗
値が大きく増大する、という課題があっｒコ。Problems to be Solved by the Invention Conventionally, the above-mentioned thin film thermistor has a heat resistance temperature of 4.
It's 00℃. However, in the case of an electric oven that has a function of burning off food dirt such as oil that adheres to the inner wall surface at high temperature, the temperature inside the oven is about 500° to burn off the food dirt. Heat to C. Because of this, thin film thermistors are required to have heat resistance of SOO''C or higher.However, as mentioned above, the heat resistance of conventional thin film thermistors is 400''C, and thin film thermistor elements are required to have heat resistance of 400''C or higher.
There is a problem in that when exposed to high temperatures of 100°F or higher, the resistance value increases significantly over time.
本発明は、上記従来の課題を解消しｆこ薄膜サーミスタ
を提供するものである。The present invention solves the above-mentioned conventional problems and provides a thin film thermistor.
課題を解決するｒこめの手段
Ｊ：記課題を解決するｒこめの、本発明の薄膜サーミス
タは、平板状アルミナ基板と前記平板状アルミナ基板の
一方の表面に形成さｎｒニ一対の電極膜と前記一対の電
極膜が互いに電気的に接続されるようにｌ￥ｔＩ記アル
ミナ基板の一方の表面上、および前記一対の電極膜表面
に形成さｎｆコ引引換膜、前記一対の電極膜にそれぞれ
接続さｎｒ：ｐｔ リード線とよりなり、少なくとも不
活性雰囲気中で焼成した転移点６００〜７５０ ”Ｃの
硝子被覆層を、前記ＳｔＣ＠の表面に形成して構成さｎ
る点にある。Means for Solving the Problems J: A thin film thermistor of the present invention for solving the above problems comprises a flat alumina substrate, a pair of electrode films formed on one surface of the flat alumina substrate, and a pair of electrode films formed on one surface of the flat alumina substrate. An exchange film is formed on one surface of the alumina substrate and on the surface of the pair of electrode films so that the pair of electrode films are electrically connected to each other, and an exchange film is formed on the pair of electrode films, respectively. A glass coating layer having a transition temperature of 600 to 750 "C and fired in at least an inert atmosphere is formed on the surface of the StC@.
The point is that
作 用
薄膜サーミスタの耐熱性は、電極焼成条件、ＳＩＣ膜形
成条件、硝子被覆層形成条件、など多くの要因に支配さ
ｎるが、なかでも硝子被覆層形成条件の寄与の大きいこ
とが見いだされた。すなわち実施例で詳述するように硝
子被覆層形成時の雰囲気中に酸素が多く含まｎていると
、薄膜サーミスタの耐熱性は低下する。この原因の詳細
は不明であるが、耐熱試験で抵抗値の大幅に増大した薄
膜サーミスタを用い、ＳＩＣ膜と電極膜の接触部を絶縁
物で軽く機械的に押さえると、抵抗値が大幅に減少する
ことから、硝子被覆層形成時の酸素は、電極膜とＳＩＣ
膜の接触部に絶縁層を形成するのに寄与し、この結果、
抵抗値が大幅に増大すると思わｎる。本発明は上述した
ように、硝子被覆層を不活性雰囲気中で形成する。硝子
被覆層形成時に酸素が少ないので、電極膜とＳＩＣ膜の
接触部が安定化さｎ耐熱性が向１する。The heat resistance of a thin film thermistor is controlled by many factors, such as electrode firing conditions, SIC film formation conditions, and glass coating layer formation conditions, but it has been found that the glass coating layer formation conditions have a particularly large contribution. Ta. That is, as will be described in detail in the Examples, if the atmosphere during the formation of the glass coating layer contains a large amount of oxygen, the heat resistance of the thin film thermistor will decrease. The details of this cause are unknown, but when a thin film thermistor whose resistance value significantly increased in a heat resistance test was used and the contact area between the SIC film and the electrode film was lightly mechanically pressed with an insulating material, the resistance value significantly decreased. Therefore, during the formation of the glass coating layer, oxygen is present between the electrode film and the SIC.
It contributes to the formation of an insulating layer at the membrane contacts, resulting in
I think the resistance value will increase significantly. In the present invention, as described above, the glass coating layer is formed in an inert atmosphere. Since there is less oxygen during the formation of the glass coating layer, the contact area between the electrode film and the SIC film is stabilized, and the heat resistance is improved.
まｒこ、薄膜サーミスタの耐熱性として５００″Ｃ以上
を必要とすることと、電極膜への熱的影響を小さくする
ことを考慮し、硝子材料の転移点は６００〜７５０℃が
要求さｎる。Considering that the thin film thermistor requires heat resistance of 500"C or more and to minimize the thermal influence on the electrode film, the transition point of the glass material is required to be 600 to 750C. Ru.
実施例
以下、本発明の一実施例を図面を用いて説明する。第１
図は、本発明の一実施例を示す薄膜サーミスタの断面図
である。平板状アルミナ基板１の一方の表面上に一対の
Ａｕ−Ｐｔ厚膜電極膜２を形成し、この後Ａｕ−Ｐｔ電
極膜２に互いに電気的に接続されるようにスパッタ法に
より前記平板状アルミナ基板１の一方の表面と、および
前記Ａｕ −Ｐｔ ｗｔ電極膜にＳＩＣ膜を形成しｒこ
。次に、前記Ａｕ−Ｐｔ厚膜ｌＩ！極＠２にｐｔリード
線４を溶接した後、転移点６７０°Ｃの硝子被覆層５を
形成しｒ、＝。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
The figure is a sectional view of a thin film thermistor showing an embodiment of the present invention. A pair of Au-Pt thick film electrode films 2 are formed on one surface of the flat alumina substrate 1, and then the flat alumina substrate 1 is coated with the flat alumina substrate 1 by sputtering so as to be electrically connected to each other on the Au-Pt electrode films 2. An SIC film is formed on one surface of the substrate 1 and on the Au-Pt wt electrode film. Next, the Au-Pt thick film lI! After welding the PT lead wire 4 to the pole @2, a glass coating layer 5 with a transition point of 670°C is formed, r,=.
ここで形成する硝子被覆層の材料は、硝子被覆層へのク
ランク防止のｒこめ、平板状アルミナ基板との熱膨張係
数を同程度にする必要がある。硝子成分として、鉛系（
ＰｂＯ−８２０３−５１０２） 、亜鉛系（ＺｎＯ−８
２０３−引ｏ２） 等があるが、この場合アルカリ成
分を含まないで、クラックが入りにくい非結晶性硝子が
適当である。ここでは、ＣａＯ−ＢａＯ−９１０２系硝
子を用いｒこ。この硝子粉末と溶剤（テルピネオール）
およびバインダ（アクリル系樹脂）からなるペーストを
Ａｕ−Ｐｔ厚膜電極膜２およびＳＩＣ膜３に、に塗布し
、窒素ガス中で、８５０〜９００″Ｃの温度で約１０分
間焼成し、硝子被覆層５を形成しｆコ。硝子焼成時の雰
囲気中に約２０％の酸素を含む場合、この薄膜サーミス
タを空気中５００ ”Ｃで１０００時間放置試験すると
、抵抗値は１０倍以上変化し、Ｂ定数は一２０％以下に
なっｒこ。約０．１％の酸素を含む場合前記試験で抵抗
値は約１００％、Ｂ定数は一１０％以下であっｒこ。約
１００ ｐｐｍの酸素を含む場合、同様の試験で、抵抗
値は１０％以内、Ｂ定数は一２％以内であっｒこ。The material for the glass coating layer formed here needs to have a coefficient of thermal expansion comparable to that of the flat alumina substrate in order to prevent cranking of the glass coating layer. As a glass component, lead-based (
PbO-8203-5102), zinc-based (ZnO-8
203-O2), but in this case, amorphous glass that does not contain an alkali component and is difficult to crack is suitable. Here, CaO-BaO-9102 glass is used. This glass powder and solvent (terpineol)
A paste consisting of a binder (acrylic resin) and a binder (acrylic resin) is applied to the Au-Pt thick film electrode film 2 and the SIC film 3, and baked in nitrogen gas at a temperature of 850 to 900"C for about 10 minutes to coat the glass. When the atmosphere during glass firing contains approximately 20% oxygen, when this thin film thermistor is left in the air at 500"C for 1000 hours, the resistance value changes by more than 10 times, and B The constant will be less than -20%. When containing about 0.1% oxygen, the resistance value in the above test was about 100% and the B constant was less than -10%. When containing about 100 ppm of oxygen, a similar test showed that the resistance value was within 10% and the B constant was within -2%.
以上のことから、硝子材料を焼成させる場合、不活性雰
囲気中の酸素濃度は、１００ ｐｐｒｎ以下が望ましい
。このようにして形成しｒこ本発明の薄膜サーミスタを
空気中５００ ”Ｃで１０００時間の耐熱試験放置にか
けｆこ。その試験結果を＠２図に示す。同図から判るよ
うに本発明の薄膜サーミスタは、１０００時間経過で抵
抗値変化率は５％以下であっｒこ。まｒこ８定数変化率
−１％以内であり実用上問題なく抵抗温度特性が安定し
ていることが見いださｎｆこ。From the above, when firing the glass material, the oxygen concentration in the inert atmosphere is preferably 100 pprn or less. The thin film thermistor of the present invention thus formed was subjected to a heat resistance test for 1000 hours at 500"C in air. The test results are shown in Figure 2. As can be seen from the figure, the thin film thermistor of the present invention The resistance value change rate of the thermistor was found to be less than 5% after 1000 hours.It was found that the resistance value change rate was within -1%, so there was no problem in practical use, and the resistance temperature characteristics were stable. .
発明の効果
以上述べてきｒこように、本発明の薄膜サーミスタによ
ｎば次に示す効果が得らｎる。Effects of the Invention As described above, the thin film thermistor of the present invention provides the following effects.
（１）硝子を焼成させるときの雰囲気が不活性雰囲気中
（酸素濃度１００ ｐｐｍ以下）であるので硝子焼成中
にｍ極模とＳＩＣ膜の接馳部に絶縁層を形成することな
く薄膜サーミスタの特性の安定化が図ｎる。(1) Since the atmosphere in which the glass is fired is an inert atmosphere (oxygen concentration of 100 ppm or less), the thin film thermistor can be formed without forming an insulating layer at the interface between the m-pole model and the SIC film during glass firing. The characteristics are stabilized.
（２）通常の窒素雰囲気中焼成用トンネル炉を使用でき
るので、硝子被覆層を容易に形成することができ、生産
性に優ｎる。(2) Since an ordinary tunnel furnace for firing in a nitrogen atmosphere can be used, a glass coating layer can be easily formed, and productivity is excellent.
第１図は本発明の一実施例を示す薄膜サーミスタの断面
図、第２図は同薄膜サーミスタの放置時間に対する抵抗
値変化率を示す特性図である。
１・・・・・・平板状アルミナ基板、２・・・・・・Ａ
ｕ−Ｐｔ厚膜電極嘆、３・・・・・・ＳＩＣ膜、４・・
・・・・Ｐｔリード線、５・・・・・・硝子被覆層。FIG. 1 is a sectional view of a thin film thermistor showing an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing the rate of change in resistance value of the thin film thermistor with respect to the standing time. 1... Flat alumina substrate, 2... A
u-Pt thick film electrode, 3...SIC film, 4...
...Pt lead wire, 5...Glass coating layer.
Claims (2)
一方の表面に形成された一対の電極膜と前記一対の電極
膜が互いに電気的に接続されるように前記アルミナ基板
の一方の表面に形成された炭化硅素被膜と、前記一対の
電極膜にそれぞれ接続された白金リード線とより成り、
少なくとも不活性雰囲気中で焼成した転移点６００〜７
５０℃の硝子被覆層を前記ＳＩＣ膜の表面に形成した薄
膜サーミスタ。(1) A flat alumina substrate and a pair of electrode films formed on one surface of the flat alumina substrate, and a pair of electrode films formed on one surface of the alumina substrate so that the pair of electrode films are electrically connected to each other. comprising a silicon carbide film and platinum lead wires respectively connected to the pair of electrode films,
Transition point 600-7 fired in at least an inert atmosphere
A thin film thermistor in which a 50° C. glass coating layer is formed on the surface of the SIC film.
００ｐｐｍ以下である特許請求の範囲第１項記載の薄膜
サーミスタ。(2) The oxygen concentration in the inert atmosphere during firing of the glass material is 1
The thin film thermistor according to claim 1, which has a concentration of 00 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4622788A JPH01220404A (en) | 1988-02-29 | 1988-02-29 | Thin film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4622788A JPH01220404A (en) | 1988-02-29 | 1988-02-29 | Thin film thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01220404A true JPH01220404A (en) | 1989-09-04 |
Family
ID=12741223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4622788A Pending JPH01220404A (en) | 1988-02-29 | 1988-02-29 | Thin film thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01220404A (en) |
-
1988
- 1988-02-29 JP JP4622788A patent/JPH01220404A/en active Pending
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