JPH01219097A - Device for producing thin film - Google Patents

Abstract

PURPOSE:To prevent strain of an electron beam diffracted image and to simplify the constitution of the title device by reversing the turning direction of current allowed to flow through the filaments arranged in a crucible in one part for the other part. CONSTITUTION:The crucibles 4, 5 are arranged in a vacuum chamber 1 and the filaments 16, 17 are fitted to the outsides thereof respectively. In this case, the filaments 16, 17 are wound in the reverse directions. An AC electric source 14 for allowing current to flow through the filaments 16, 17 is provided to evaporate the material in the crucibles 4, 5. When a thin film buit-up on a substrate is projected by electron beams 11 with an electron gun 10 and a diffracted image is formed on a fluorescent plate 13, the induction magnetic fields formed in the routes of the beams 11 and diffracted electron beams 12 are mutually canceled and reduced by the current allowed to flow through the filaments 16, 17. Thereby strain of the electron beam diffracted image is reduced. The title device is simplified because the commercial AC electric source 14 is utilized.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a thin film manufacturing apparatus using the MBE (molecular beam epitaxy) method or the like.

(B) Prior Art A conventional thin film manufacturing apparatus includes a crucible 4.5 equipped with an injection port 2.3 in a vacuum chamber 1, as shown in FIG. 3, for example.
Filament 36.37 placed outside the crucible 4.5
The material housed in the crucible is heated to evaporate and deposited on the surface of the substrate 9 on the sample stage 8, and the deposited thin film is irradiated with an electron beam 11 of 5 to 30 keV from the electron gun 10 to cause diffraction. The state of the thin film is observed by detecting the electron beam 12 with a fluorescent screen 13. 34° 35 in rx is a power source for passing current through filaments 36 and 37.

(c) Issues to be Solved: In a series of conventional thin film manufacturing equipment, the electron beam and diffracted electron beam are affected by the induced magnetic field created by the filament current, making it impossible to obtain accurate electron beam diffraction images. there were. -Especially if the filament's power source is an AC power source, the diffracted electron beam will constantly fluctuate, and the electron beam diffraction image may be blurred or not obtained at all, which has a large effect.
If the power source is a DC power source, the effect will be relatively small and the positional relationship of the electron beam diffraction image will be distorted, but a rectifier circuit will be required to obtain the DC current from a normal commercial power source. Furthermore, in order to magnetically shield the filament with a metal such as μ metal having high magnetic permeability, there arises the problem that the filament must be thermally shielded to prevent the shield from melting. The aim is to solve problems such as:

(d) Means for Solving the Problems" - In order to solve the problems described above, in the present invention, the direction of rotation of the current flowing through at least a portion of the filament is reversed from that of the other portions.

(E) Effect: By reversing the direction of rotation of the current flowing through one part of the filament to the other parts, it is possible to reduce (the fluctuations in) the induced magnetic field created by the current in the filament in the path of the electron beam and the diffracted electron beam. can.

(f) Example FIG. 1 is a block diagram showing an embodiment of the present invention.

As shown in this figure, a crucible 4.5 equipped with an injection port 2°3 is arranged in a vacuum chamber 1, and a current is passed through a filament 1-16.17 placed outside the crucible. The material housed in the is heated to evaporate and deposited on the surface of the substrate 9 on the sample stage 8, and the deposited thin film is irradiated with an electron beam 11 of 5 to 30 keV from an electron gun 10 to convert the diffracted electron beam 2 to the fluorescent plate 3. to observe the state of the thin film. ] 4 is an AC power source for passing current through filament 1 (>, 17) 1 In this example, the filament wound around crucible 4.5 - 16 and 17 are wound in the opposite manner, and current is passed through filament 16. The swirling direction of the current is opposite to the swirling direction of the current flowing through the filaments 1 to 17. Therefore, the current flowing through the filaments 16 and 17 decreases as the electron beam and the induced magnetic field created in the electron beam path cancel each other out. In addition, the AC power supply 14
can directly use a normal commercial power supply, and the equipment configuration is sectional.

FIG. 2 is a main part configuration diagram showing the second embodiment, in which the crucible 4.
The filaments 1-26 and 27 are wound in the same way, but the AC power supply 24 and the filaments 26 and 27 are wired so that the AC phase is reversed.

FIG. 4(a) is a diagram showing the main part configuration of the third embodiment (a diagram showing the configuration of the filament 46 and the AC power source 44), in which the filament 46 wound around the crucible is doubled, and adjacent lines The directions of the currents are opposite, and the induced magnetic fields cancel each other out.

FIG. 4(b) is a main part configuration diagram (154 showing the configuration of the filament 56 and AC power source 54) showing the fourth embodiment,
The winding direction of the filament 56 wound around the crucible is reversed halfway, so that the induced magnetic fields cancel each other out.

(1.) Effects According to the present invention, (fluctuations in) the induced magnetic field in the path of the electron beam and diffracted electron beam of high-speed electron diffraction (RHEEI) used in thin film manufacturing equipment is reduced, and accurate electron beam diffraction images are obtained. In addition, since a normal commercial power source can be directly used as the power source for the filament, the device configuration can be simplified, which is an excellent effect.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram showing an embodiment of the thin film manufacturing apparatus of the present invention, FIG. 2 is a configuration diagram of main parts showing the second embodiment, and FIG. 3 is a configuration diagram without showing a conventional thin film manufacturing apparatus. Figure 4(a), (
L+) are main part configuration diagrams showing third and fourth embodiments, respectively. J... Vacuum chamber 2.3... Injection port 4.5... Crucible 8... Sample stage 9... Substrate JO...・・・・・・
Electron gun】】・・・Electron beam 12・・・・・・
・Diffraction electron beam 13... Fluorescent screen 34.3
5...Power supply 16.17, 26, 27.36°37.46.56...Filament 14.24
, 44.54...No changes to the AC power supply drawings and contents of A1> Fig. 1 No. 3 Concave condolence 2 Drawing procedure amendment) June 2, 1988 2, Title of the invention Thin film manufacturing equipment 3, relationship with the case of the person making the amendment Patent applicant: 1 (199) Kuwabara-cho, Nishinokyo, Nakagyo-ku, Kyoto City Shimadzu Corporation Representative Director and President Minoru Nishihejo 4, agent The drawings that have been engraved as shown in the attached document submit.

Claims (1)

[Claims] (1) Electric current is passed through a filament placed outside the crucible to heat and evaporate the material contained in the crucible and deposit it on the substrate, and the deposited thin film is irradiated with an electron beam and the diffracted electron beam is detected to detect the A thin film manufacturing apparatus for observing the state of a thin film, characterized in that the swirling direction of the current flowing through at least a portion of the filament is reversed from that of the other portion.