JPH01215025A - Plasma cvd device - Google Patents

Abstract

PURPOSE:To form an excellent film onto the surface of a substrate by installing a coil outside a vacuum vessel, making currents flow through the coil and producing a magnetic field crossing at right angles to an electric field between an anode and a cathode. CONSTITUTION:A flat type coil 18 is mounted outside a vacuum vessel 11, and currents are made to flow through the flat type coil 18 and a magnetic field M crossing at right angles to an electric field E is generated between an anode (the vacuum vessel 11) and a cathode (a sample base 12), thus uniformly generating plasma having high energy intensity to the upper section of a substrate 14 in a wide area.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to plasma C
VD (Che+*fcal Vapor Depo
sltlon) device.

[Conventional technology]

A conventional parallel plate type plasma CVD apparatus is shown in FIG.

In the figure, reference numeral 1 denotes a vacuum container, and inside this vacuum container 1, a cathode 3 which also serves as a mounting table for a substrate 2 is provided. An anode 4 is placed above the cathode 3 to face each other, and power from a high frequency power source 5 is applied via a matching box 6 between these two electrodes 3,4. Also,
The anode 4 is provided with a gas introduction lower for reacting gas, and the vacuum volume 61 is provided with a gas outlet 8 for discharging the reacted gas. Note that 9 in the figure is an insulator that electrically insulates the vacuum container 1 and the anode 4.

In the above configuration, for example, when forming a silicon nitride film on the substrate 2, first the inside of the vacuum chamber l is
The pressure is reduced to about 10-' Torr, and S i H4-NH3 is introduced into the vacuum vessel 1 from the gas introduction lower as a reaction gas. Then, a high frequency power of, for example, 13.58 MHz and 500 W is applied between the cathode 3 and the anode 4 from the high frequency power source 5 via the matching box 6,
Plasma is generated within the vacuum container 1. This plasma activates the reactive gas in the vacuum chamber 1, and a silicon nitride film is formed on the surface of the substrate 2.

By the way, in the conventional apparatus as described above, the plasma energy is weak, so the film growth rate is 300 to 500 people/sin.
5000 because it is slow and the stress on the formed film is large.
It has been difficult to produce a film with a thickness of Å or more. Therefore,
As a means of improving the above-mentioned drawbacks and forming a good film, a thin film production technique in which a film is formed on the surface of a substrate by applying a magnetic field orthogonal to the electric field between the anode and cathode is disclosed in the literature (e.g. It is known from Japanese Patent Publication No. 80-11109).

[Problem to be solved by the invention]

This type of magnetron method requires a uniform magnetic field to be generated between the anode and cathode in order to generate plasma uniformly. Conventionally, a uniform magnetic field was obtained by rotating or moving the magnet. , a drive mechanism is required to rotate or move the magnet, and the magnetic field per unit time is weak, so the plasma intensity is strong where there is a magnetic field, but the plasma intensity is weak on average.

The present invention was made in view of these problems, and uses plasma C that can form a good film on the surface of a substrate.
The purpose is to provide a VD device.

[Means to solve the problem]

In order to solve the above problems, the present invention is characterized in that a coil is provided outside the vacuum container, and a current is passed through the coil to generate a magnetic field orthogonal to the electric field between the anode and the cathode. do.

[For production]

In the present invention, since high-energy plasma is uniformly generated over a wide area above the substrate, a good film can be formed on the surface of the substrate.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows an embodiment of the present invention, in which reference numeral 11 indicates a vacuum vessel which also serves as an anode, and 12 indicates a sample stage installed within the vacuum vessel 11 with an electrical insulator 13 interposed therebetween. This sample stage 1
A substrate 14 is placed on top of the reactor gas (for example, SiH) introduced into the vacuum container 11 from a gas introduction nozzle 15.
4-NH3) to form a silicon nitride film or the like on the surface of the substrate 14.

A high frequency oscillator 17 is connected to the sample stage 12 via a matching box 16.
The high-frequency power oscillated from 7 is applied to the sample stage 12 and the vacuum container 11 to generate plasma in the vacuum container 11.

On the other hand, a magnetic field M perpendicular to the electric field E exists outside the vacuum chamber 11.
A flat coil 18 is provided that generates. This flat coil 18 has a ratio of winding thickness A to winding width B of 1=3, and is designed to generate a uniform magnetic field M' over a wide area. If the ratio of the winding thickness to the winding width is 1=3 or more, a more uniform magnetic field can be obtained over a wide range. In addition, 19 in the figure
is an exhaust nozzle for evacuating the inside of the vacuum container 11, and a vacuum pump (not shown) is connected to this exhaust nozzle 19.

When forming a silicon nitride film on the substrate 14 using the apparatus configured as described above, first, the inside of the vacuum container 11 is heated to a high vacuum (for example, IX 10
``6 Torr), a reaction gas (for example, SI H4N H3) is introduced into the vacuum vessel 11 from the gas introduction nozzle 15, and the pressure inside the vacuum vessel 11 is reduced to txto-', ~
Raise the temperature to about 1×10' Torr. Next, in this state, a high frequency power of 13.56 MHz and 500 W is applied from the high frequency oscillator 17 to the vacuum container 11 and the sample stage 12 to generate an electric field E above the substrate 14.
A current is passed through the flat coil 18 to generate a magnetic field M perpendicular to the electric field E described above. As a result, high-energy plasma is uniformly generated over a wide area above the substrate 14, and the plasma activates the reactive gas in the vacuum chamber 11, forming a silicon nitride film on the surface of the substrate 14.

In this way, a flat coil 18 is provided outside the vacuum vessel 11, and a current is passed through the flat coil 18 to create a magnetic field perpendicular to the electric field E between the anode (vacuum vessel 11) and cathode (sample stage 12). By generating the field M, high-energy plasma is uniformly generated over a wide area above the substrate 14, so that a good film can be formed on the surface of the substrate 14.

In addition, because the stress on the biomembranes is small, it has become possible to provide biomembranes for 5,000 people. Furthermore, since strong plasma can be obtained, the film growth rate is also as fast as 2000 to 3000 people/ml.

Note that the present invention is not limited to the above embodiments.

For example, in the above embodiment, the flat coil 18 was used to generate the magnetic field, but as shown in FIG. The magnetic field distribution on the substrate may be changed by adjusting the current flowing through the substrate 20. Generally, when the magnetic field is the same, the plasma in the center becomes stronger, so by weakening the magnetic field in the center, it becomes possible to form a uniform film on the substrate.

〔Effect of the invention〕

As described above, according to the present invention, plasma with high energy intensity can be uniformly generated over a wide area above the substrate, so that a good film can be formed on the surface of the substrate.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of a plasma CVD apparatus showing one embodiment of the present invention, and FIG. 2 is a plasma CVD apparatus showing another embodiment of the present invention.
FIG. 3 is a block diagram of a conventional plasma CVD apparatus. DESCRIPTION OF SYMBOLS 11... Vacuum container, 12... Sample stand, 14... Substrate, 15... Gas introduction nozzle, 17... High frequency oscillator, 18... Flat type coil, 19... Exhaust nozzle,
20...Coil. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2

Claims (1)

[Claims] A substrate is placed on the cathode in a vacuum container in which an anode and a cathode are arranged facing each other, and a reaction gas is introduced into the vacuum container, and electric power is applied to the anode and cathode to form a film on the substrate. A plasma CVD apparatus characterized in that a coil is provided outside the vacuum vessel, and a current is passed through the coil to generate a magnetic field orthogonal to the electric field between the anode and the cathode.