JPH01214112A - Optical reactor - Google Patents
Optical reactorInfo
- Publication number
- JPH01214112A JPH01214112A JP3851988A JP3851988A JPH01214112A JP H01214112 A JPH01214112 A JP H01214112A JP 3851988 A JP3851988 A JP 3851988A JP 3851988 A JP3851988 A JP 3851988A JP H01214112 A JPH01214112 A JP H01214112A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- light
- plane reflection
- optical axis
- reflection mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 239000012495 reaction gas Substances 0.000 claims abstract description 10
- 238000005086 pumping Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000005530 etching Methods 0.000 abstract description 6
- 230000005469 synchrotron radiation Effects 0.000 abstract description 6
- 230000005284 excitation Effects 0.000 abstract description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- -1 CH4 is flowed Chemical compound 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光励起によって反応ガスを分解し、半導体素
子製造に必要なＣＶＤ 、エツチング、エピタキシャル
結晶成長などの反応を行なう光反応装置に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photoreaction device that decomposes a reactive gas by photoexcitation and performs reactions such as CVD, etching, and epitaxial crystal growth necessary for manufacturing semiconductor devices. be.
これまで光を励起光源とする光反応装置としては５７ｎ
ｅｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｅｘｃｉｔｅ
ｄ ＣＶＤａｎｄ Ｅｔｅｈｉｎｇ″Ｔａｕｎｅｏ Ｕ
ｒｉａｕ 、 ＨａｋａｒｕＫｙｕｒａｇｌ 、 Ｊ、
Ｖａｅ、Ｓｅｌ、ａｎｄ Ｔｅｅｈ、Ｂ５Ｊ９８７゜Ｐ
１４３６に開示され念ものが知られている。これは光源
としてスペクトル帯域中の広い電子シンクロトロン放射
光装置を使用したもので、反応容器内に反応チャンバー
に反応ガスと流し、これに電子シンクロトロン放射光装
置からの真空紫外光を照射すると、基板表面に各種の光
反応を誘起することが出来る。例えば、ＳｉＨ４ガスを
流せば基板上にアモルファスシリコンやポリシリコンあ
るいはシリコン単結晶が堆積する。また、ＣＨ４などの
カーボンを含むガスを流せばカーボン膜が堆積する。ま
た、ＳＦ６ 、 ＮＦ３ガスなどのエツチングガスを流
すと、半導体、金属、絶縁膜などをエツチングすること
が出来る。Until now, the only photoreaction device that uses light as an excitation light source is 57n.
ehrotron Radiation Excite
dCVDand Eteching"Tauneo U
riau, HakaruKyuragl, J.
Vae, Sel, and Teeh, B5J987゜P
It was disclosed in 1436 and is well known. This uses an electron synchrotron radiation device with a wide spectral band as a light source, and when a reaction gas is flowed into a reaction chamber in a reaction vessel and vacuum ultraviolet light from the electron synchrotron radiation device is irradiated, Various photoreactions can be induced on the substrate surface. For example, by flowing SiH4 gas, amorphous silicon, polysilicon, or silicon single crystal is deposited on the substrate. Further, if a gas containing carbon such as CH4 is flowed, a carbon film is deposited. Further, by flowing an etching gas such as SF6 or NF3 gas, semiconductors, metals, insulating films, etc. can be etched.
ところで、これらの反応は照射する光の波長に大きく依
存する。特にカーボン膜の堆積には、５０久以下の短波
長光が重要な役割を果たす。従ってカーボン膜を堆積し
たい時は、この短波長光を含む光を照射する必要がある
。また、逆にｓｌの結晶成長やシリコン基板上の自然酸
化膜などをエツチングによって除きたい時は、カーボン
の堆積は、望ましくない要因となるので、５０Ｘ以下の
短波長光をカットし、より長波長の光のみで反応を起こ
させることが望ましい。この様に反応に応じて波長を選
択することは、真空紫外光、特に眠子シンクロトロン放
射光を用いた光反応においては、重要である。Incidentally, these reactions largely depend on the wavelength of the irradiated light. In particular, short wavelength light of 50 Km or less plays an important role in the deposition of carbon films. Therefore, when it is desired to deposit a carbon film, it is necessary to irradiate light containing this short wavelength light. Conversely, when you want to remove SL crystal growth or natural oxide film on a silicon substrate by etching, carbon deposition is an undesirable factor, so cut short wavelength light of 50X or less and use longer wavelength light. It is desirable to cause the reaction only with light. Selection of the wavelength according to the reaction in this way is important in photoreactions using vacuum ultraviolet light, especially Nemiko synchrotron radiation light.
しかし、このような従来の光反応装置においては、照射
光の波長を必要に応じて可変設定するための手段を備え
ていないため、望ましくない反応を抑制しながら望まし
い反応を選択的に進ませることができず、高い反応制御
性と高い反応効率を有する光反応装置の実現が要望され
ている。However, such conventional photoreaction devices do not have a means to variably set the wavelength of irradiated light as necessary, so it is difficult to selectively allow desired reactions to proceed while suppressing undesirable reactions. Therefore, it is desired to realize a photoreaction device with high reaction controllability and high reaction efficiency.
したがって、本発明は上述したような問題点を解決し、
簡単な構成で照射光の波長を簡便に可変し得て反応容器
に入射できるようＫすると共に、適切なビーム径に集光
し、これにより反応容器の差動排気部の光通過口径を極
力小さくシ、この部分で反応ガスの大きな真空度差を実
現し、高い反応制御性と反応効率を有する光反応装置を
提供することと目的とするものである。Therefore, the present invention solves the above-mentioned problems,
With a simple configuration, the wavelength of the irradiated light can be easily varied so that it enters the reaction vessel, and the beam is focused to an appropriate beam diameter, thereby minimizing the light passage aperture of the differential pumping part of the reaction vessel. Second, it is an object of the present invention to provide a photoreaction device that realizes a large difference in the degree of vacuum of the reaction gas in this part and has high reaction controllability and reaction efficiency.
本発明は上記目的を達成するために、真空紫外線から紫
外線の領域の光ビームを出射する光源と、この光源から
出射した前記光ビームを反射する第１の平面反射ミラー
と、この第１の平面反射ミラーに当って反射した反射光
を反応容器の差動排気部を経由して該反応容器内に導き
反応ガスに照射する第２の平面反射ミラーと、一定の曲
率を有して前記第１の平面反射ミラーの前方もしくは前
記第２の平面反射ミラーの後方に設置され、前記光源か
らの光ビームを前記差動排気部に集光する曲面ミラーと
を備え、前記第１の平面反射ミラーは光軸を直交する軸
を中心として回動自在に設けられ、前記第２の平面反射
ミラーは前記第１の平面反射ミラーの回動に伴い、前記
光軸と直交する軸を中心として回動されると同時に光軸
と平行に移動し、前記反応容器に入射するビームの光軸
を一定に保つものである。In order to achieve the above object, the present invention includes a light source that emits a light beam in the range from vacuum ultraviolet to ultraviolet rays, a first plane reflection mirror that reflects the light beam emitted from the light source, and a first plane reflection mirror that reflects the light beam emitted from the light source. a second plane reflecting mirror that guides the reflected light reflected by the reflecting mirror into the reaction vessel via the differential pumping section of the reaction vessel and irradiates the reaction gas; a curved mirror installed in front of the plane reflection mirror or behind the second plane reflection mirror to focus the light beam from the light source on the differential exhaust section, the first plane reflection mirror The second plane reflection mirror is provided to be rotatable about an axis orthogonal to the optical axis, and the second plane reflection mirror is rotated about the axis orthogonal to the optical axis as the first plane reflection mirror rotates. At the same time, the beam moves parallel to the optical axis to keep the optical axis of the beam incident on the reaction vessel constant.
本発明において、可変的波長選択２２枚の平面反射ミラ
ーの回動と移動の運動で実現している。In the present invention, variable wavelength selection is realized by the rotation and movement of 22 plane reflection mirrors.
すなわち、真空紫外領域では、反射率のスペクトル分布
は、平面反射ミラーへの光の入射角に依存し、入射角が
小さくなるに伴って反射スペクトル分布の短波長限界が
徐々に長波長側にシフトする。That is, in the vacuum ultraviolet region, the spectral distribution of reflectance depends on the angle of incidence of light on the plane reflecting mirror, and as the angle of incidence becomes smaller, the short wavelength limit of the reflection spectral distribution gradually shifts to the longer wavelength side. do.
つまり平面反射ミラーが短波長カットフィルターとして
働く。したがって、平面反射ミラーの入射角を変えるこ
とによシ反射光の波長分布を変えることができる。In other words, the plane reflection mirror acts as a short wavelength cut filter. Therefore, the wavelength distribution of reflected light can be changed by changing the incident angle of the plane reflection mirror.
また、本発明では２枚の平面反射ミラーの回動と移動運
動を組み合わせることにより、一定の入射光光軸のもと
て第１の平面反射ミラーが回動しても、第２の平面反射
ミラーからの反射光の光軸の位置は不変である。In addition, in the present invention, by combining the rotation and movement of the two plane reflection mirrors, even if the first plane reflection mirror rotates based on a constant optical axis of the incident light, the second plane reflection The position of the optical axis of the reflected light from the mirror remains unchanged.
さらに、本発明では、真空紫外領域においては、光を透
過する適切な材料がないため反応容器の差動排気部に真
空隔壁としての窓材を設置することができないが、集光
ミラーにより光を集光することにより差動排気部の口径
を十分細くすることができるため、真空排気コンダクタ
ンスを十分小さくでき、そのため差動排気により反応容
器と大きな光源との真空度差を維持できる。Furthermore, in the present invention, in the vacuum ultraviolet region, it is not possible to install a window material as a vacuum partition in the differential pumping part of the reaction vessel because there is no suitable material that transmits light. By focusing the light, the aperture of the differential pumping section can be made sufficiently thin, so the vacuum pumping conductance can be made sufficiently small, and therefore, the differential pumping can maintain the vacuum difference between the reaction vessel and the large light source.
以下、本発明を図面に示す実施例に基づいて詳細に説明
する。Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第１図は本発明に係る光反応装置の一実施例を示す構成
図で、１は真空紫外線から紫外線の領域の光ビームＬを
出射する光源としての電子シンクロトロン放射光装置、
２は前記光ビームＬを集光する曲面ミラー、３は曲面ミ
ラー２の後方に配置され光軸と直交する軸を中心として
、換言すれば紙面を含む面内にて回動する第１の平面反
射ミラー、４は第１の平面ミラー３の後方に配置され該
ミラー３０回動に伴って光軸と直交する軸を中心として
回動されると共罠、光軸と平行に移動される第２の平面
反射ミラー、５は反応ガスＧが供給される反応容器、６
は基板ホルダー７に配設された基板、８はミラーチャン
バー９と反応容器５とを接続する差動排気部、１０はガ
ス供給口、１１ａ。FIG. 1 is a configuration diagram showing one embodiment of a photoreaction device according to the present invention, in which 1 is an electron synchrotron radiation device as a light source that emits a light beam L in the range from vacuum ultraviolet to ultraviolet;
2 is a curved mirror that condenses the light beam L, and 3 is a first plane that is arranged behind the curved mirror 2 and rotates about an axis perpendicular to the optical axis, in other words, within a plane that includes the plane of the paper. A reflective mirror 4 is disposed behind the first plane mirror 3, and when the mirror 30 is rotated about an axis perpendicular to the optical axis, a mirror 4 is moved parallel to the optical axis. 2 a plane reflection mirror; 5 a reaction vessel to which the reaction gas G is supplied; 6
8 is a differential exhaust unit connecting the mirror chamber 9 and the reaction vessel 5; 10 is a gas supply port; and 11a.
１ｉｂは排気口である。1ib is an exhaust port.
第２図はミラー基板表面に耐蝕性の良い白金をコートし
た平面反射ミラーの反射スペクトルのミラーへの光の斜
入射角依存性を示す図である。この図から明らかなよう
に斜入射角が大きくなると、反射光スペクトル【分布の
短波長限界は長波長側に移動する。したがって、第１図
において、第１および第２の平面反射ミラー３，４を紙
面内で回動させることにより反応容器５に入射する光り
の波長分布を可変することができる。また、第１の平面
反射ミラー３の回動に伴って第２の平面反射ミラー４を
回動させ、かつ光軸と平行に左または右に移動させるこ
とにより、反応容器５に入射する光りの光軸を一定に保
つことができる。さらに本発明は曲面ミラー２を用いて
光りを差動排気部８に集光しているので、該排気部８０
口径を十分細くすることができる。曲面ミラー２として
は所定の曲率を有するトロイダルミラー、または放物面
ミラーが使用される。曲面ミラー２の基板材質としては
放射光りによる損傷に十分耐え得る材質、例えばＳｉＣ
、無酸素鋼などが適している。一方、第１および第２の
平面反射ミラー３，４の基板材質としては加工性の良い
石英が適している。FIG. 2 is a diagram showing the dependence of the reflection spectrum of a plane reflection mirror whose mirror substrate surface is coated with platinum, which has good corrosion resistance, on the angle of oblique incidence of light onto the mirror. As is clear from this figure, as the oblique incidence angle increases, the short wavelength limit of the reflected light spectrum [distribution] moves toward the long wavelength side. Therefore, in FIG. 1, the wavelength distribution of light incident on the reaction vessel 5 can be varied by rotating the first and second plane reflection mirrors 3 and 4 within the plane of the paper. In addition, by rotating the second plane reflection mirror 4 along with the rotation of the first plane reflection mirror 3 and moving it to the left or right in parallel with the optical axis, the light incident on the reaction vessel 5 can be reduced. The optical axis can be kept constant. Furthermore, since the present invention uses the curved mirror 2 to focus the light on the differential exhaust section 8, the exhaust section 80
The diameter can be made sufficiently thin. As the curved mirror 2, a toroidal mirror or a parabolic mirror having a predetermined curvature is used. The substrate material of the curved mirror 2 is a material that can sufficiently withstand damage caused by radiation, such as SiC.
, oxygen-free steel, etc. are suitable. On the other hand, quartz, which has good workability, is suitable as the substrate material for the first and second plane reflection mirrors 3 and 4.
このような構成において、ガス供給口１０より反応容器
５内に反応ガスＧを供給すると、これを反応容器５に導
かれた放射光りが分解し、しかして上述した通９基板６
の表面にエツチングやＣＶＤやエピタキシャル結晶成長
などの加工を施すことができる。In such a configuration, when the reaction gas G is supplied into the reaction container 5 from the gas supply port 10, the radiant light guided into the reaction container 5 decomposes the reaction gas G, and the above-mentioned through 9 substrate 6 is decomposed.
Processing such as etching, CVD, and epitaxial crystal growth can be performed on the surface of the substrate.
ここで、本発明においては第１および第２の平面反射ミ
ラー３，４を回動させているので、放射光りの波長を簡
便に可変選定できる。したがって、例えば望ましくない
反応は制御しながら望ましい反応を選択的に進ませるな
ど、光励起反応の制御が容易である。また曲面ミラー２
によって光を集光しているので、差動排気部８の口径を
極力小さくでき、したがってこの部分で反応ガスＧＯ大
きな真空度差を実現できる。特に、このような構成にお
いては差動排気部８のビーム通過部口径を最／ｊ・１■
×１１ｍ程度まで小さく絞ることが可能で、そのためミ
ラーチャンバー９の真空度を１０−８ｔｏｒｒ程度に維
持したままで反応容器５の真空度を１Ｏ−１ｔｏｒｒ以
上まで上昇することも可能である。Here, in the present invention, since the first and second plane reflection mirrors 3 and 4 are rotated, the wavelength of the emitted light can be easily and variably selected. Therefore, it is easy to control photoexcited reactions, for example, by selectively allowing desired reactions to proceed while controlling undesirable reactions. Also curved mirror 2
Since the light is focused by , the diameter of the differential pumping section 8 can be made as small as possible, and therefore, a large vacuum difference between the reaction gas GO and the reactant gas GO can be realized in this section. In particular, in such a configuration, the diameter of the beam passing section of the differential pumping section 8 is set to
It is possible to reduce the pressure to about 11 m, and therefore it is possible to increase the vacuum degree of the reaction vessel 5 to 10-1 torr or more while maintaining the vacuum degree of the mirror chamber 9 at about 10-8 torr.
さらに、曲面ミラー２と第１．第２の平面反射ミラー３
，４との組合わせにより第２の平面反射ミラー４からの
反射光の光軸の位置を不変にすることができ、光反応装
置を簡便にまとめることができる。Furthermore, the curved mirror 2 and the first . Second plane reflection mirror 3
, 4, the position of the optical axis of the reflected light from the second plane reflection mirror 4 can be kept unchanged, and the photoreaction device can be easily assembled.
なお、上記実施例は曲面ミラー２を第１の平面反射ミラ
ー３の前方に配置した例を示したが、本発明はこれに特
定されるものではなく、第２の平面反射ミラー４の後方
に配置しても上記実施例と同様な効果が得られるもので
ある。但し、この場合は、放射光りによる損傷を防止す
るため第１の平面反射ミラー３の基板をＳＩＣまたは無
酸素鋼で製作し、第２の平面反射ミラー４と曲面ミラー
２を石英で製作することが望ましい。Although the above embodiment shows an example in which the curved mirror 2 is placed in front of the first flat reflecting mirror 3, the present invention is not limited to this, and the curved mirror 2 is placed behind the second flat reflecting mirror 4. Even if it is arranged, the same effect as the above embodiment can be obtained. However, in this case, in order to prevent damage due to radiation, the substrate of the first flat reflecting mirror 3 should be made of SIC or oxygen-free steel, and the second plane reflecting mirror 4 and curved mirror 2 should be made of quartz. is desirable.
また、ミラー保護の点で、上記実施例はミラー基板表面
に耐蝕性の良い白金コートを施した平面反射ミラー３，
４を用いたが、白金単層膜ではなく、軟Ｘ線に対し、光
学定数が大きく異なる２種類の材料（例Ｗ−Ｃ、Ｗ−Ｂ
ｅ 、 Ｍｏ−Ｂ ｅ 、 Ｐｔ−Ｃ、Ｍ。In addition, from the point of view of mirror protection, the above embodiment has a flat reflecting mirror 3, which has a platinum coating with good corrosion resistance on the surface of the mirror substrate.
4 was used, but instead of a platinum monolayer film, two types of materials (e.g. W-C, W-B) with significantly different optical constants for soft X-rays were used.
e, Mo-Be, Pt-C, M.
−８ｉ等）の薄膜を交互に積層した、いわゆる多層膜を
平面反射ミラーの表面に堆積形成しておいてもよく、そ
うすることにより特定の波長の光のみが反射されるよう
になｐ１特定の選択された波長の光のみを反応容器５に
入射させることができる。A so-called multilayer film, in which thin films of (-8i, etc.) are alternately laminated, may be deposited on the surface of the plane reflection mirror, so that only light of a specific wavelength is reflected. Only light having a selected wavelength can be allowed to enter the reaction vessel 5.
以上説明したように本発明に係る光反応装置においては
、２枚の平面反射ミラーと１枚の曲面ミラーとの組合わ
せにより、光源からの光の波長を簡便に可変設定するこ
とができるため、望ましくない反応は抑制しなから望ま
しくない反応を選択的に進ませることができるようにな
り、高い反応制御性と反応効率を有する反応装置を提供
し得、半導体素子製造に必要なＣＶＤ 、エツチング、
エピタキシャル結晶成長などに用いて好適である。As explained above, in the photoreaction device according to the present invention, the wavelength of the light from the light source can be easily and variably set by the combination of two plane reflection mirrors and one curved mirror. It is now possible to selectively advance undesired reactions without suppressing them, providing a reaction apparatus with high reaction controllability and reaction efficiency, and improving CVD, etching, and other processes necessary for semiconductor device manufacturing.
It is suitable for use in epitaxial crystal growth, etc.
また、曲面ミラーで光を集光するようにしているため、
差動排気部の口径を十分小さくでき、したがって真空排
気コンダクタンスを小さくし得、真空紫外領域での使用
に際して、該排気部に真空隔壁としての窓材を設置する
必要もない。In addition, since the light is focused using a curved mirror,
The diameter of the differential pumping section can be made sufficiently small, so the vacuum pumping conductance can be made small, and there is no need to install a window material as a vacuum partition in the pumping section when used in the vacuum ultraviolet region.
第１図は本発明の一実施例を示す構成図、第２図は白金
表面の軟Ｘ線反射率スペクトル分布の斜入射角依存性を
示す図−である。
１・・・・電子シンクロトロン放射光装置、２・・・・
曲面ミラー、３・・・・第１の平面反射ミラー、４奢・
９畳第２の平面反射ミラー、５や・・・反応容器、６・
・・・基板、Ｔ・・・・基板ホルダー、８・・・・差動
排気部、３・・・・ミラーチャンバー。
特許出願人 日本電信之話株式会社FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing the dependence of the soft X-ray reflectance spectrum distribution on the platinum surface on the oblique incidence angle. 1...Electron synchrotron radiation device, 2...
Curved mirror, 3...first flat reflecting mirror, 4
9 tatami 2nd flat reflecting mirror, 5... Reaction container, 6...
...Substrate, T...Substrate holder, 8...Differential exhaust section, 3...Mirror chamber. Patent applicant Nippon Telegraph Co., Ltd.
Claims (2)
る光源と、この光源から出射した前記光ビームを反射す
る第１の平面反射ミラーと、この第１の平面反射ミラー
に当つて反射した反射光を反応容器の差動排気部を経由
して該反応容器内に導き反応ガスに照射する第２の平面
反射ミラーと、一定の曲率を有して前記第１の平面反射
ミラーの前方もしくは前記第２の平面反射ミラーの後方
に設置され、前記光源からの光ビームを前記差動排気部
に集光する曲面ミラーとを備え、前記第１の平面反射ミ
ラーは光軸に直交する軸を中心として回動自在に設けら
れ、前記第２の平面反射ミラーは前記第１の平面反射ミ
ラーの回動に伴い、前記光軸と直交する軸を中心として
回動されると同時に光軸と平行に移動し、前記反応容器
に入射するビームの光軸を一定に保つことを特徴とする
光反応装置。(1) A light source that emits a light beam in the range from vacuum ultraviolet rays to ultraviolet rays, a first plane reflection mirror that reflects the light beam emitted from this light source, and a reflection reflected by the first plane reflection mirror. a second plane reflection mirror that guides light into the reaction vessel through the differential pumping part of the reaction vessel and irradiates the reaction gas; a curved mirror installed behind the second plane reflection mirror and condensing the light beam from the light source onto the differential exhaust part, the first plane reflection mirror being centered about an axis perpendicular to the optical axis. With the rotation of the first plane reflection mirror, the second plane reflection mirror is rotated about an axis perpendicular to the optical axis, and simultaneously parallel to the optical axis. A photoreaction device characterized in that the optical axis of a beam that moves and enters the reaction container is kept constant.
射ミラーはその表面に、軟Ｘ線に対し、光学定数が大き
く異なる２種類の元素の所定の膜厚の薄膜が交互に積層
形成されていることを特徴とする光反応装置。(2) In claim 1, the first and second plane reflection mirrors have thin films of a predetermined thickness alternately laminated on their surfaces of two types of elements having greatly different optical constants with respect to soft X-rays. A photoreaction device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63038519A JP2544644B2 (en) | 1988-02-23 | 1988-02-23 | Light reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63038519A JP2544644B2 (en) | 1988-02-23 | 1988-02-23 | Light reaction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01214112A true JPH01214112A (en) | 1989-08-28 |
| JP2544644B2 JP2544644B2 (en) | 1996-10-16 |
Family
ID=12527521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63038519A Expired - Fee Related JP2544644B2 (en) | 1988-02-23 | 1988-02-23 | Light reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2544644B2 (en) |
-
1988
- 1988-02-23 JP JP63038519A patent/JP2544644B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2544644B2 (en) | 1996-10-16 |
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