JPH01212218A - Production of thin superconducting oxide film - Google Patents
Production of thin superconducting oxide filmInfo
- Publication number
- JPH01212218A JPH01212218A JP63037939A JP3793988A JPH01212218A JP H01212218 A JPH01212218 A JP H01212218A JP 63037939 A JP63037939 A JP 63037939A JP 3793988 A JP3793988 A JP 3793988A JP H01212218 A JPH01212218 A JP H01212218A
- Authority
- JP
- Japan
- Prior art keywords
- source
- bis
- substrate
- heated
- hexafluoroacetylacetonate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010949 copper Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- 239000007983 Tris buffer Substances 0.000 claims abstract description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 13
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 239000002994 raw material Substances 0.000 abstract description 10
- 239000012159 carrier gas Substances 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、化学気相蒸着法を用いて酸化物超電導薄膜
を製造する方法に関し、例えば、酸化物超電導材を金属
などのテープ上に成膜し線材として用いたり、コイル化
し高磁場磁石や送電線に利用したり、或いはエレクトロ
ニクス用配線材料やジッセフソン素子によるセンサーと
して用いるための超電導薄膜の製造方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for producing an oxide superconducting thin film using chemical vapor deposition, for example, a method for forming an oxide superconducting material on a tape of metal or the like. The present invention relates to a method for producing a superconducting thin film, which can be used as a coated wire, coiled and used as a high-field magnet or power transmission line, or used as a wiring material for electronics or a sensor using a Gisefson element.
（従来の技術）
ペロプスカイト構造の酸化物Ｙ１ＢａｔＣｕ２０ｆｆ−
Ｊは液体窒素温度以上でも超電導状態を示すことが知ら
れている。しかし、このいわゆる超電導セラミックスは
現在のところ工業用材料として１よ確立されておらず未
だ研究段階である。これらの研究のうち粉末を焼結させ
たバルクセラミックスの研究が主流であり、また、酸化
物粉末を材料とする線材の製造方法（例えば、金属管に
上記酸化物の粉末を封入しで線引きする方法）について
も若干の報告がある。しかし、焼結法では緻密な焼結体
が得られないことや、セラミックスであるため加工が難
しいので、例えば線材化しても電流密度が高くできない
など、実用化には多くの課題が残されている。(Prior art) Perovskite structure oxide Y1BatCu20ff-
It is known that J exhibits a superconducting state even at temperatures above liquid nitrogen temperature. However, this so-called superconducting ceramic has not yet been established as an industrial material and is still at the research stage. Among these studies, the mainstream is research on bulk ceramics made by sintering powder, and there are also methods for producing wire rods made from oxide powder (for example, drawing the wire by enclosing the oxide powder in a metal tube). There are also some reports regarding this method. However, the sintering method does not produce a dense sintered body, and since it is made of ceramic, it is difficult to process, so even if it is made into a wire, it is not possible to achieve a high current density. There is.
一方、酸化物超電導の薄膜では、緻密なものが得られ電
流密度が高いものが出来ることが知られており、前記の
ような各方面への実用化が期待されている。しかし、薄
膜の製作法としてこれまで成功したのは、わずかにスパ
ッタリング法が報告されているのみである（例えばＪａ
ｐａｎｅｓｅ Ｊｏｕｒｎａｌｏｒ Ａｐｐｌｉｅｄ
Ｐｈｙｓｉｃｓ Ｖｏｌ、２６．Ｎｏ、７ Ｌ１２４８
）、 Ｌ／かしスパッタリング法は高真空装置が必要で
あり、しかも薄着速度が小さいなど実用化には問題が多
い。On the other hand, it is known that oxide superconducting thin films can be dense and have high current densities, and are expected to be put to practical use in various fields as described above. However, only a few sputtering methods have been reported to have been successful in producing thin films (for example, Ja
panese Journal Applied
Physics Vol, 26. No, 7 L1248
), the L/cutter sputtering method requires a high-vacuum device, and has many problems in practical application, such as a slow deposition rate.
（発明が解決しようとする課題）
本発明の目的は、ＹｌＢａｇＣｕｓＯｙ−Ｊの薄膜を、
スパッタリング法に較べて簡単な装置を使用できる化学
気相蒸着法（ＣＶＤ法）で製造する方法を提供すること
にある。(Problems to be Solved by the Invention) The purpose of the present invention is to provide a thin film of YlBagCusOy-J.
It is an object of the present invention to provide a manufacturing method using a chemical vapor deposition method (CVD method) which can use simpler equipment than a sputtering method.
（課題を解決するための手段）
ＣＶＤ法は作製したい膜の成分を含むガスを高温に加熱
した基板上に流すことにより、基板表面でガスが熱分解
し、被膜が生成するものである。しかし、これまでＹｌ
ＢａｌＣｕｓＯｖ−Ｊを作るために必要なＹ、Ｂａ、Ｃ
ｕを含み、しかも蒸気圧の高い物質が知られていないた
め、ＣＶＤ法によるＹＪａｚＣｕｓＯｙＪ薄膜の製造に
ついては報告がない。(Means for Solving the Problems) The CVD method is a method in which a gas containing the components of the film to be produced is passed over a substrate heated to a high temperature, whereby the gas is thermally decomposed on the substrate surface and a film is produced. However, until now Yl
Y, Ba, and C required to make BalCusOv-J
Since no substance containing u and having a high vapor pressure is known, there are no reports on the production of YJazCusOyJ thin films by CVD.
本発明者は、ＣＶＤ法によるＹ＋ＢａｔＣｕ３０．−ｆ
薄膜の製造を試み、Ｖ源、Ｂａ源およびＣｕ源として適
当な化合物を探究した結果それぞれ下記の化合物が適当
であることを見出した。The present inventor has developed Y+BatCu30. -f
As a result of trying to manufacture a thin film and searching for compounds suitable as a V source, Ba source, and Cu source, the following compounds were found to be suitable for each.
Ｙの原料として、
トリス（ジピバロイルメタナート）イツトリウム、１１
ａの原料として、
ビス（ヘキサフルオロアセチルアセトナート）バリウム
Ｃｕの原料として、
ビス（ジピバロイルメタナート）銅、またはビス（ヘキ
サフルオロアセチルアセトナート）ｗ４これらの化合物
を用い、窒素またはＡｒガスをキャリヤーガスとし、酸
素を反応させればＹ＋Ｂａ＋Ｃｕの酸化物が生成するこ
とが分かった。従ってキャリヤーガス流量などをコント
ロールしてＹ＋ＢａｔＣｕ３０、−為の組成になるよう
にすれば目的とする超電導性の薄膜が製造できる。As a raw material for Y, tris(dipivaloyl methanate) yttrium, 11
As a raw material for a, as a raw material for bis(hexafluoroacetylacetonato) barium Cu, as a raw material for bis(dipivaloyl methanato) copper or bis(hexafluoroacetylacetonate) w4, these compounds are used, and nitrogen or Ar gas is used. It has been found that by using the carrier gas as a carrier gas and reacting with oxygen, an oxide of Y+Ba+Cu is generated. Therefore, the desired superconducting thin film can be produced by controlling the flow rate of the carrier gas to obtain a composition of Y+BatCu30,-.
（作用）
ＣＶＤ法は基板を加熱し、この上にガスを流すだけで膜
が生成するため、真空や特別の電源などが不要であり、
スパッタリング法に比べて安価に生膜ができる。(Operation) The CVD method generates a film by simply heating the substrate and flowing gas over it, so there is no need for a vacuum or special power source.
A biofilm can be formed at a lower cost than the sputtering method.
上記の原料ガスを選んだ理由は、これらのガスが１００
〜１３０℃において数ｍｌＨｇの蒸気圧があるため、原
料ガスを１００℃前後に加熱することにより、容易に加
熱基板上に導くことができるためである。The reason for choosing the above raw material gases is that these gases have 100
This is because there is a vapor pressure of several mlHg at ~130°C, so by heating the raw material gas to around 100°C, it can be easily guided onto the heated substrate.
ＣＶＤ法では、通常塩化物がよく使用されるが、Ｃｕ、
Ｙｓ Ｂａの塩化物は数１００℃に加熱しなければ蒸発
しない。In the CVD method, chloride is usually used, but Cu,
YsBa chloride does not evaporate unless it is heated to several hundred degrees Celsius.
上記の原料を使用する本発明の薄膜製造方法の基本的な
条件を述べれば次のとおりである。The basic conditions of the thin film manufacturing method of the present invention using the above raw materials are as follows.
基板としては、例えば、チタン酸ストロンチウムの仮が
使用できる。この場合、基板の加熱温度は４００〜８０
０℃が適当である。As the substrate, for example, strontium titanate can be used. In this case, the heating temperature of the substrate is 400 to 80°C.
0°C is suitable.
ＣＶＤの条件としては、まず、原料ガスの加熱温度は、
トリス（ジピバロイルメタナート）イツトリウムで１２
０〜１４０℃、ビス（ヘキサフルオロアセチルアセトナ
ート）バリウムで５０〜７０℃、ビス（ジピバロイルメ
タナート）銅で７０〜９０℃、またビス（ヘキサフルオ
ロアセチルアセトナート）ｗ４で６０〜８０℃、がそれ
ぞれ適当である。As conditions for CVD, first, the heating temperature of the raw material gas is
Tris (dipivaloyl methanate) Yttrium 12
0 to 140°C, 50 to 70°C for bis(hexafluoroacetylacetonate) barium, 70 to 90°C for copper bis(dipivaloyl methanate), and 60 to 80°C for bis(hexafluoroacetylacetonate) w4. °C is appropriate.
キャリヤーガスには、窒素、アルゴン等の不活性ガスを
使用し、その流量は各原料毎に、１００〜５００ｓ ｊ
！ ７分とする。酸素は５０〜３００ｍ ｊ！ ／分程
度がよい。An inert gas such as nitrogen or argon is used as the carrier gas, and its flow rate is 100 to 500 sj for each raw material.
! It will be 7 minutes. Oxygen is 50-300mj! / minute is good.
（実施例１）
図示のＣＶＤ装置によって、チタン酸ストロンチウム基
板の上にＹｌＢａｌＣｕｓＯｔ−ＪのＥｉｌｌｌｌを生
成させた。(Example 1) Eill of YlBalCusOt-J was produced on a strontium titanate substrate using the illustrated CVD apparatus.
実施条件は第１表のとおりである。The implementation conditions are as shown in Table 1.
図に示すように、反応管８の中に基板６を置き、加熱装
置７でこれを加熱した。一方、原料加熱炉３．４．５か
らそれぞれ所定の温度に加熱されたトリス（ジピバロイ
ルメタナート）イツトリウム（Ｙ （ＤＰＭ） ３）と
ビス（ヘキサフルオロアセチルアセトナート）バリウム
（Ｂａ （ＩＦ＾）８）と、ビス（ジピバロイルメタナ
ート）銅（Ｃｕ （ＤＰＭ） ｘ）を、窒素ガスボンベ
２から送られるキャリアーガスとともに反応管８に供給
した。酸素は酸素ボンベｌから送られて、原料ガスおよ
びキャリヤーガスと混合される。As shown in the figure, a substrate 6 was placed in a reaction tube 8 and heated by a heating device 7. On the other hand, tris (dipivaloyl methanate) yttrium (Y (DPM) 3) and bis (hexafluoroacetylacetonate) barium (Ba (IF ^) 8) and bis(dipivaloyl methanate) copper (Cu (DPM) x) were supplied to the reaction tube 8 together with a carrier gas sent from the nitrogen gas cylinder 2. Oxygen is sent from an oxygen cylinder 1 and mixed with the source gas and carrier gas.
第 １ 表
このようにして、３０分の反応の結果、３μｍ厚のＹ＋
Ｂａ１Ｃｕ３０．−Ｊ組成の緻密な膜が生成した。この
膜に０□雰囲気中で８８０°Ｃ×３０分の熱処理を施し
、室温まで１２時間で冷却した後、Ｘ線回折で調べたと
ころ、Ｙ＋ＢａｚＣｕｓＯｔｊの斜方晶ペロブスカイト
型の結晶が生成していることが確認された。Table 1 Thus, as a result of 30 minutes of reaction, a 3 μm thick Y+
Ba1Cu30. A dense film of -J composition was produced. This film was heat-treated at 880°C for 30 minutes in a 0□ atmosphere, cooled to room temperature for 12 hours, and examined by X-ray diffraction, which revealed that orthorhombic perovskite crystals of Y+BazCusOtj were formed. This was confirmed.
更に、四端子法で電気抵抗を測定した結果、７７Ｋ（液
体窒素温度）で０Ωになることがわかっｋ。Furthermore, as a result of measuring the electrical resistance using the four-terminal method, it was found that it became 0Ω at 77K (liquid nitrogen temperature).
なお、Ｃｕ源としてビス（ジピバロイルメタナ−） ）
ｗ４（Ｃｕ（ＤＰＭ）いを使用した場合も、ビス（ヘ
キサフルオロアセチルアセトナート） ！Ｆｉ（Ｃｕ（
ＨＦ＾）冨）を用いた場合も同じ結果が得られた。Note that bis(dipivaloylmethana) is used as the Cu source.
Even when using w4(Cu(DPM)), bis(hexafluoroacetylacetonate)!Fi(Cu(
The same results were obtained when using HF^).
（発明の効果）
本発明の方法によれば、ＣＶＤ法を用いて比較的簡単な
装置でＹＩＢａｌＣｕユ０．−５系の超電導セラミック
スの薄膜ができる。基板に金属（例えば、銀）のテープ
を使用し、その上に本発明方法によってＹ、ＢａｇＣｕ
ｓＯｔ−Ｊの薄膜を形成させた後、これを適当に加工す
れば、超電導線材を製造することができる。また、上記
のようにして基板上にＹｌＢａｚＣｕｓＯｔＪの薄膜を
形成して、各種のセンサー素子も製造できる。(Effects of the Invention) According to the method of the present invention, YIBalCu can be produced using a relatively simple device using the CVD method. A thin film of -5 series superconducting ceramics is produced. A metal (e.g. silver) tape is used for the substrate, and Y, BagCu
After forming a thin film of sOt-J, if it is processed appropriately, a superconducting wire can be manufactured. Moreover, various sensor elements can also be manufactured by forming a thin film of YlBazCusOtJ on a substrate as described above.
図は本発明の方法を実施するＣＶＤ装置の概要を示すも
のである。The figure shows an outline of a CVD apparatus that implements the method of the present invention.
Claims (1)
リウム、Ｂａ源としてビス（ヘキサフルオロアセチルア
セトナート）バリウム、Ｃｕ源としてビス（ジピバロイ
ルメタナート）銅またはビス（ヘキサフルオロアセチル
アセトナート）銅を用い、化学気相蒸着法で酸化物を基
板に蒸着させることを特徴とするＹ−Ｂａ−Ｃｕ−Ｏ系
超電導薄膜の製造方法。Tris (dipivaloyl methanate) yttrium as a Y source, bis (hexafluoroacetylacetonate) barium as a Ba source, bis (dipivaloyl methanate) copper or bis (hexafluoroacetylacetonate) copper as a Cu source 1. A method for producing a Y-Ba-Cu-O based superconducting thin film, which comprises depositing an oxide on a substrate by chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63037939A JPH01212218A (en) | 1988-02-19 | 1988-02-19 | Production of thin superconducting oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63037939A JPH01212218A (en) | 1988-02-19 | 1988-02-19 | Production of thin superconducting oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01212218A true JPH01212218A (en) | 1989-08-25 |
Family
ID=12511525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63037939A Pending JPH01212218A (en) | 1988-02-19 | 1988-02-19 | Production of thin superconducting oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01212218A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193405A (en) * | 1987-06-16 | 1989-04-12 | Kawasaki Steel Corp | Complex compound for forming oxide superconductor thin film and method for forming said thin film |
| JPH03243779A (en) * | 1990-02-20 | 1991-10-30 | Fuyuutec Fuaanesu:Kk | Device for producing oxide superconducting thin film |
-
1988
- 1988-02-19 JP JP63037939A patent/JPH01212218A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193405A (en) * | 1987-06-16 | 1989-04-12 | Kawasaki Steel Corp | Complex compound for forming oxide superconductor thin film and method for forming said thin film |
| JPH03243779A (en) * | 1990-02-20 | 1991-10-30 | Fuyuutec Fuaanesu:Kk | Device for producing oxide superconducting thin film |
| JPH07108764B2 (en) * | 1990-02-20 | 1995-11-22 | 株式会社フューテックファーネス | Oxide superconducting thin film manufacturing equipment |
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