JPH01211914A - Plasma cvd growth apparatus - Google Patents
Plasma cvd growth apparatusInfo
- Publication number
- JPH01211914A JPH01211914A JP3661988A JP3661988A JPH01211914A JP H01211914 A JPH01211914 A JP H01211914A JP 3661988 A JP3661988 A JP 3661988A JP 3661988 A JP3661988 A JP 3661988A JP H01211914 A JPH01211914 A JP H01211914A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- wafer
- plasma cvd
- mounting electrode
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000000356 contaminant Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 7
- 239000007789 gas Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はプラズマＣＶＤ成長装置に関し、特に半導体ウ
ェハーを載置する載置用電極の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma CVD growth apparatus, and particularly to the structure of a mounting electrode for mounting a semiconductor wafer.
従来、この種のプラズマＣＶＤ成長装置は、第５図に示
すように、チャンバー９内に半導体ウェハー（以下単に
ウェハーという）４を載置する載置用電極３とこれに対
向する対向電極６とを設け、上部のガス導入管７より反
応ガスを導入し、電極間でプラズマを発生させてウェハ
ー４上に膜を形成したのち、未反応ガス等を排気口８よ
り排出するように構成されていた。尚、５はヒータであ
る。Conventionally, this type of plasma CVD growth apparatus, as shown in FIG. The reactor gas is introduced through the upper gas inlet pipe 7, plasma is generated between the electrodes to form a film on the wafer 4, and unreacted gas is discharged through the exhaust port 8. Ta. Note that 5 is a heater.
上述した従来のプラズマＣＶＤ成長装置では、装置を動
作させた場合第６図に示すように、ウェハー４の周辺部
の汚れや荒れによりウェハー４の周辺で電界に乱れが生
じ、異常放電が発生したりするため、均一な膜を得るの
が困難であるという欠点がある。In the above-mentioned conventional plasma CVD growth apparatus, when the apparatus is operated, as shown in FIG. 6, the electric field is disturbed around the wafer 4 due to dirt or roughness around the wafer 4, and abnormal discharge occurs. The disadvantage is that it is difficult to obtain a uniform film because of the
本発明の目的は、均一な膜を形成することのできるプラ
ズマＣＶＤ成長装置を提供することにある。An object of the present invention is to provide a plasma CVD growth apparatus that can form a uniform film.
本発明のプラズマＣＶＤ成長装置は、半導体ウェハーを
載置する載置用電極と該載置用電極に対向して設けられ
た対向電極とを有するプラズマＣＶＤ成長装置において
、前記載置用電極上には半導体ウェハーを取り囲むよう
に絶縁体が設けられているものである。The plasma CVD growth apparatus of the present invention includes a mounting electrode on which a semiconductor wafer is placed and a counter electrode provided opposite to the mounting electrode. In this case, an insulator is provided to surround a semiconductor wafer.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
第１図において、チャンバ９内にはウェハー４を載置す
る載置用電極３とこれに対向する対向電極６と、ウェハ
ー４を加熱するヒーター５とが設けられている。そして
特に、載置用電極３上には第２図に示すように、ウェハ
ー４を取り囲む絶縁体として、ウェハー４の載置される
位置に対応する部分に穴１０が形成された絶縁性プラス
チック板１が設けられている。尚、第１図において、７
は反応ガスの導入管、８は排気口である。In FIG. 1, a chamber 9 is provided with a mounting electrode 3 for mounting a wafer 4 thereon, a counter electrode 6 facing the mounting electrode 3, and a heater 5 for heating the wafer 4. In particular, as shown in FIG. 2, on the mounting electrode 3, as an insulator surrounding the wafer 4, there is an insulating plastic plate with a hole 10 formed in a portion corresponding to the position where the wafer 4 is placed. 1 is provided. In addition, in Figure 1, 7
8 is an inlet pipe for the reaction gas, and 8 is an exhaust port.
このように構成された本実施例においては、ウェハー４
を載置して装置を動作させた場合、電界２は第３図に示
すようにウェハー４の上面で平行となるため、ウェハー
４の表面に形成される膜は第４図に示すように、従来の
プラズマＣＶＤ装置により形成されたものに比べ膜厚は
より均一なものとなる。また絶縁性プラスチック板１上
に汚染物が付着してもウェハー４上の電界２に乱れを生
じることはない。In this embodiment configured in this way, the wafer 4
When the device is operated with the wafer mounted, the electric field 2 becomes parallel to the upper surface of the wafer 4 as shown in FIG. 3, so the film formed on the surface of the wafer 4 is as shown in FIG. The film thickness is more uniform than that formed by a conventional plasma CVD apparatus. Further, even if contaminants adhere to the insulating plastic plate 1, the electric field 2 on the wafer 4 will not be disturbed.
上記実施例においては、ウェハー４の載置部分を除く載
置用型１Ｆｆ１３の表面全体を絶縁性プラスチック板１
で覆った場合について説明したが、ウェハー４の周囲の
部分のみを覆ってもよい。また、絶縁体としてプラスチ
ック板を用いたが、これに限定されるものではなく、１
５０″Ｃ以上の温度に耐える他の絶縁性有機材料を用い
てもよい。In the above embodiment, the entire surface of the mounting mold 1Ff13 except the part where the wafer 4 is placed is covered with an insulating plastic plate 1.
Although the case where the wafer 4 is covered with the wafer 4 has been described, only the peripheral portion of the wafer 4 may be covered. In addition, although a plastic plate was used as the insulator, it is not limited to this.
Other insulating organic materials that withstand temperatures above 50"C may also be used.
以上説明したように本発明は、プラズマＣＶＤ成長装置
の載置用電極上に、半導体ウェハーを取り囲むように絶
縁体を設けることにより、厚さの均一な膜を形成できる
という効果がある。As explained above, the present invention has the effect that a film having a uniform thickness can be formed by providing an insulator on the mounting electrode of a plasma CVD growth apparatus so as to surround the semiconductor wafer.
第１図は本発明の一実施例の断面図、第２図及び第３図
は本発明の一実施例に用いな載置用電極の上面図及び断
面図、第４図は実施例及び従来例によるウェハー上の膜
厚の分布を示す図、第５図及び第６図は従来のプラズマ
ＣＶＤ成長装置の断面図及びその載置用電極の断面図で
ある。
１・・・絶縁性プラスチック板、２・・・電界、３・・
・載置用電極、４・・・ウェハー、５・・・ヒータ、６
・・・対向電極、７・・・ガス導入管、８・・・排気口
、９・・・チャンバー、１０・・・穴。FIG. 1 is a sectional view of an embodiment of the present invention, FIGS. 2 and 3 are a top view and a sectional view of a mounting electrode used in an embodiment of the present invention, and FIG. 4 is an embodiment and a conventional FIGS. 5 and 6, which show the distribution of film thickness on a wafer according to an example, are a sectional view of a conventional plasma CVD growth apparatus and a sectional view of its mounting electrode. 1... Insulating plastic plate, 2... Electric field, 3...
- Mounting electrode, 4... wafer, 5... heater, 6
. . . Counter electrode, 7. Gas introduction pipe, 8. Exhaust port, 9. Chamber, 10. Hole.
Claims (1)
に対向して設けられた対向電極とを有するプラズマＣＶ
Ｄ成長装置において、前記載置用電極上には半導体ウェ
ハーを取り囲むように絶縁体が設けられていることを特
徴とするプラズマＣＶＤ成長装置。A plasma CV having a mounting electrode on which a semiconductor wafer is placed and a counter electrode provided opposite to the mounting electrode.
D. A plasma CVD growth apparatus, characterized in that an insulator is provided on the mounting electrode so as to surround the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3661988A JPH01211914A (en) | 1988-02-19 | 1988-02-19 | Plasma cvd growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3661988A JPH01211914A (en) | 1988-02-19 | 1988-02-19 | Plasma cvd growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01211914A true JPH01211914A (en) | 1989-08-25 |
Family
ID=12474819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3661988A Pending JPH01211914A (en) | 1988-02-19 | 1988-02-19 | Plasma cvd growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01211914A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296037A (en) * | 1991-06-21 | 1994-03-22 | Kawasaki Steel Corporation | Plasma CVD system comprising plural upper electrodes |
-
1988
- 1988-02-19 JP JP3661988A patent/JPH01211914A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296037A (en) * | 1991-06-21 | 1994-03-22 | Kawasaki Steel Corporation | Plasma CVD system comprising plural upper electrodes |
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