JPH01209767A - Electric/electronic device element - Google Patents

Abstract

PURPOSE:To manufacture an electric/electronic device element with an amplifying operation as observed in a multielectrode vacuum tube or the like and economically by disposing a thin organic film having insulation or semiinsulation between a pair of electrodes, and providing a control lattice region having a shape for controlling the flow of carriers in the film and simultaneously passing the carriers. CONSTITUTION:A primary electrode 1 is provided on a substrate 6, a thin organic film 2, a control lattice layer 3 and a thin organic film layer 4 are so sequentially formed in this order thereon as to sandwich the lattice layer between the film layers, and an upper electrode 5 is further laminated thereon. The material to be applied to the films 2, 4 is needed to be of an organic material exhibiting insulation or semi- insulation, and most of organic materials may be employed. In order to form the thin organic film layer, a depositing method may be applied, and an LB method is preferable in view of controllability, easiness and its reproducibility. A single molecule film of an organic compound having hydrophobic and hydrophilic properties in one molecule or its accumulated film can be easily formed on the substrate, and an uniform and homogeneous, ultrathin organic film with the thickness of molecular order can be stably supplied over a large area.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to electric/electronic device elements, and more specifically, by having a control grid region in an organic thin film disposed between a pair of electrodes. The present invention relates to electric/electronic device elements having an amplifying effect similar to triode vacuum tubes, multi-electrode vacuum tubes, etc.

[Prior Art] Vacuum tubes were invented in the 20th century as electric/electronic devices having a single function, and amplifiers such as triode vacuum tubes or multiode vacuum tubes have been put into practical use.

However, this vacuum tube had various problems, such as requiring a vacuum container, being large and heavy, and requiring a heating power source.Currently, it was invented by Shockley, Pardein, and Brattain of Bell Telephone Laboratories in 1847. Transistors using semiconductors have become the star of electrical and electronic device elements that have an amplification effect. This transistor is a bipolar transistor (hereinafter referred to as BPT) or a field effect transistor (hereinafter referred to as FET), and basically has a structure in which n-type and p-type semiconductors are joined in a sandwich shape in the form of npn or pnp. Compared to vacuum tubes, they have a simple structure, are extremely lightweight and compact, do not require a heating Ml source, and have a long lifespan. However, on the other hand, the current-voltage characteristics of both BPT and FET show that the current saturates as the voltage increases, and the current-voltage characteristic is similar to that seen in triode vacuum tubes. There was a problem in that it was not possible to obtain unsaturated characteristics, and it was not possible to replace all vacuum tubes with transistors. As a solution to this problem, a static induction transistor (SIT), which is made of semiconductor and has a structure and function similar to a triode vacuum tube, has been developed.
ction Transistor) was proposed [Jun Nishizawa-eT, al. Patent No. 2050B8
(Application: 1950) ], the manufacturing technology for this SIT is difficult compared to conventional transistors, and it has been difficult to put it into practical use. However, in recent years, semiconductor crystal growth technology has made rapid progress, and development for practical use has progressed. is being developed. Compared to conventional semiconductors, this SIT amplifies input signals more faithfully, has extremely low distortion, can operate at high speed, consumes little power, and can be used with high power.

However, such various transistors are mainly formed from semiconductor elements made of inorganic materials, and require expensive materials and complicated manufacturing processes such as high-temperature treatment, and require the manufacturing equipment itself. Since it is large-scale and expensive, there is an economical problem. In order to solve these problems, research is being conducted on semiconductor devices using organic materials, but at present no semiconductor device has been provided that solves all the problems.

Additionally, a tunnel emitter amplifier has been proposed as an electric/electronic device element to replace the triode vacuum tube [R, H
, Davi S & H, H, Ho5ack JAP 34
(1983) 8114], this tunnel emitter amplifier has a sandwich structure of metal-insulating inorganic thin film-metal thin film-insulating inorganic thin film-metal, and the three metal parts are used as the emitter, base, and collector. The thickness of the thin film is set to 100 A or less, electrons flow from the emitter to the base through a tunnel, and the tunnel current is controlled by the base electrode. As a result, it has an amplification effect and can theoretically operate at very high frequencies, but it has not yet been put into practical use as an amplifier.

[Problems to be Solved by the Invention] Accordingly, an object of the present invention is to provide an electrical/electronic device that has an amplifying effect as seen in triode vacuum tubes, multipolar vacuum tubes, etc., has the advantages of transistors, and can be manufactured economically. The purpose is to provide an element.

[Means and effects for solving the problem] According to the present invention, an insulating or semi-insulating organic thin film is arranged between a pair of electrodes, and carriers such as electrons and holes flow through the organic thin film. By providing a control grid region with a shape that allows the carrier to pass through at the same time as controlling the
This realizes an electronic device element.

Hereinafter, the present invention will be explained in detail using the drawings.

FIG. 1 is a sectional view showing an example of the configuration of an electric/electronic device element according to the present invention. In FIG. 1, a base electrode 1 is provided on a substrate 6, and an organic frJII! 2 layers 2. Control grid layer 3. An electric/electronic device according to the present invention is manufactured by forming an M-controlled lattice layer sandwiched between organic thin film layers in the order of organic thin film layer 4, and further laminating upper electrode 5 thereon.

The material applicable to the organic thin films 2 and 4 according to the present invention must be an organic material exhibiting insulating or semi-insulating properties, but most of the currently known organic materials can be used.

Regarding the formation of organic thin film layers, it is possible to specifically apply vapor deposition methods, cluster ion beam methods, etc., but among known conventional techniques, LB is preferred due to controllability, ease, and reproducibility.
The method is highly preferred.

According to this LB method, a monomolecular film of an organic compound having a hydrophobic site and a hydrophilic site in one molecule or a cumulative film thereof can be easily formed on a substrate and has a thickness on the order of one molecule. , and can stably supply a uniform and homogeneous ultra-thin organic film over a large area.

The LB method uses a molecule with a structure that has a lignophilic site and a hydrophobic site in one molecule, and when the balance between the two (amphiphilic balance) is maintained appropriately, one molecule has a hydrophilic group on the water surface. This is a method to create a monomolecular film or a cumulative film thereof by using the fact that the monomolecular layer is turned downward to form a monomolecular layer.

Examples of the group constituting the hydrophobic moiety include various hydrophobic groups such as saturated and unsaturated hydrocarbon groups, condensed polycyclic aromatic radicals, and chain polycyclic phenyl groups, which are generally widely known. Each of these may be used singly or in combination to form a hydrophobic portion. On the other hand, the most typical constituent elements of the wood-philic moiety include hydrophilic groups such as carboxyl groups, sulfonic acid groups, and quaternary amino groups.

If the molecule has both these hydrophobic groups and hydrophilic groups in a well-balanced manner, it is possible to form a monomolecular film on the water surface. In addition, for boat fishing, these molecules form an insulating or semi-insulating monomolecular film, and therefore, the monomolecular cumulative film also exhibits insulating or semi-insulating properties, making it an extremely suitable material for the present invention. I can say that.

Examples include the following molecules.

Organic material [I] Fatty acid C) 13 (CH2raCO2Hn = 11~22[
II] Croconic methine dye R1OOR+ [I [I] Squarylium dye A compound in which the croconic methine group of the compound listed in [■] is replaced with a kusarylium group having the following structure.

[IV] Porphyrin dye compound-CH2NH03H7 M = H2, Cu, old, AI! -C1) and rare earth metal ion R=OCR(COOH)CnHzn4+ 5 <
n <25M = H2, Cu, old, Zn, A11
-CI and rare earth metal ion R = CnH2n, + 5 < n < 25M
=H2, Cu, old, Zn, AR-C12 and rare earth metal ion [V]fiIA combination polycyclic aromatic compound COOH [VI] diacetylene compound CH3(CH2)n CmC-C=C(CH2)! XO
n1 sentences<20 However, n1 sentences>10 X is a hydrophilic group, generally -COOH is used, but -O
H, -CONH2, etc. can also be used.

[■]Other Quinquethienyl Organic polymeric materials with a molecular weight of 10,000 or more [I] Addition polymer polyacrylic acid 2) Polyacrylic ester 3) Acrylic acid copolymer 4) Acrylic ester copolymer 5) Polyvinyl acetate 6) Vinyl acetate copolymer COCH3 [rI] Condensation polymer l) Polyamide R (2) Polycarbonate [ml Ring-opening polymer 1) Polyethylene oxide Here, R1 is a long-chain alkyl group introduced to facilitate the formation of a monomolecular film on the water surface, The number of carbon atoms n is 5≦n
≦30 is suitable.

Furthermore, R5 is a short-chain alkyl group, and the number of carbon atoms n is l≦n≦4.
The degree of polymerization m is preferably 100≦m≦5000.

It goes without saying that any organic materials or organic polymer materials other than those mentioned above that are suitable for the LB method are also suitable for the present invention. Also applicable are synthetic polypeptides (PBLG nato), etc.

Such amphiphilic molecules form a monomolecular layer on the water surface with the parent group facing downward. At this time, the monomolecular layer on the water surface has the characteristics of a two-dimensional system, and when the molecules are sparsely dispersed, the two-dimensional ideal gas equation is expressed between the area A per molecule and the surface pressure π. T holds true for πA=, resulting in a "gas film". Here, is the Portzmann constant and T is the absolute temperature. If A is made small enough, the intermolecular interaction will become stronger, resulting in a two-dimensional solid "condensation M" (or solid film).The condensation film can be applied to the surface of any object with various materials and shapes, such as glass and resin. Can be transferred layer by layer. Using this method, a monomolecular film or a cumulative film thereof can be formed and used as the organic thin film layers 2 and 4 according to the present invention.

As a specific manufacturing method, for example, the method shown below can be mentioned.

A desired organic compound is dissolved in a solvent such as chloroform, benzene, acetonitrile, etc. Next, the solution is spread on the aqueous phase 9 using a suitable device as shown in FIG. 4 to form a spread layer 11 of the organic compound. Form into a shape.

Next, a partition plate (or float) is provided to prevent the spread layer 11 from freely diffusing and spreading too much on the aqueous phase 9.
The aggregated state of the membrane material is controlled by limiting the area of 1, and a surface pressure π proportional to the aggregated state is obtained. By moving the partition plate 12, the area of the spreading layer 11 is reduced to control the state of aggregation of the film material, and the surface pressure can be gradually increased to set the surface pressure π suitable for film production. While maintaining this surface pressure, the monomolecular film 13 of the organic compound is transferred onto the substrate IO by gently raising or lowering the clean substrate IO vertically. Such a single molecule 11!13 is the fifth a
It is a film in which molecules are arranged in an orderly manner as schematically shown in Figure 5 or Figure 5b.

The monomolecular film 13 is manufactured as described above, and by repeating the above operations, a desired number of cumulative films can be formed. To transfer the monolayer onto the substrate, in addition to the vertical dipping method described above,
Methods such as horizontal adhesion method and rotating cylinder method are also possible.

The horizontal deposition method is a method in which the monomolecular film 13 is transferred by bringing the substrate 10 into horizontal contact with the water surface, and the rotating cylinder method is a method in which the cylindrical substrate 10 is rotated on the water surface to transfer the monomolecular film 13 onto the substrate IO.
This is a method of transferring it to the surface of

In the vertical immersion method described above, a substrate lO with a hydrophilic surface is used.
When it is pulled out of the water in a direction across the water surface, a single molecule of the organic compound [13] with the hydrophilic group of the organic compound facing toward the substrate IO is formed on the substrate IO (Figure 5b), as described above. When the substrate 10 is moved up and down, single molecules [13] are stacked one by one at each step, forming a cumulative film 16. ! Since the direction of the film molecules is reversed between the pulling process and the dipping process, according to this method, a Y-shaped film is formed between each layer of monomolecular f1113 in which the hydrophobic groups of the organic compound face each other (Figure 6a). In contrast, in the horizontal deposition method, a monomolecular film 13 with the hydrophobic groups of the organic compound facing the substrate 10 is formed on the substrate 10 (Fig. 5a). Even if ji13 is accumulated, there is no change in the direction of the film-forming molecules, and an X-type film is formed in which the hydrophobic group faces the substrate lO in all layers (Fig. 6b) 0On the contrary, in all layers The cumulative film 16 in which the woody groups face the substrate 10 is called a Z-type film (FIG. 6C).

The method of transferring the single molecules 11jJ13 onto the substrate IO is not limited to the above method, and when a large-area substrate is used, a method of extruding the substrate IO from a roll into the aqueous phase may also be adopted. Further, the directions of the hydrophilic groups and hydrophobic groups described above toward the substrate 10 are in principle, and can be changed by surface treatment of the substrate 10, etc.

As described above, the organic thin film layers 2 and 4 consisting of the monomolecular film 13 of the organic compound or its cumulative fi1B are formed.

Next, the control grid layer 3 located between the organic thin film layers 2 and 4 in the present invention is made of a conductive or semiconductive material, and controls the flow of carriers (electrons or holes) and at the same time allows the carriers to pass through. It is necessary to have a watery shape. The control grid layer may have, for example, a mesh shape, a parallel linear shape, as shown in FIG.
Alternatively, a hole-shaped shape may be considered, but any desired shape can be selected without being limited to these as long as the shape satisfies the above-mentioned functions.

The material forming the control lattice layer may be organic or inorganic as long as it exhibits conductivity or semiconductivity; for example, inorganic materials such as Au and Ag.

Aj), old metals and alloys such as Pt, graphite and S
i (single crystal polysilicon, amorphous), silicide, nickel silicide, palladium silicide),
There are many materials including semiconductors such as GaAs, GaP, CdS, and CdSe.

Also, in organic materials, N-methylphenadium T
Examples include conductive organic compounds such as the CNQ complex tetracyanoquinodimethane, docosylpyridinium-ditetracyanoquinodimethane, and octadecylpyridinium-ditetracyanoquinodimethane.

Regarding the formation of the control lattice layer, for example, a method of forming a film of conductive material or semiconducting electrode material by vapor deposition, sputtering, cluster ion beam method, etc. using a mask matching the shape of the desired control lattice layer. is possible. In this case, no conductive material or semiconductive material is formed in the carrier passage part, and this part is directly stacked with the organic thin film layer 4 and is in direct contact with layer 2, allowing the carrier to pass through. Can be done. Further, after forming a conductive material or a semiconductive material on the organic thin film layer 2 by vapor deposition, sputtering, cluster ion beam method, etc., it is patterned into a desired shape using lithography technology to form a control lattice layer. It is also possible to form However, in this case, the material of the organic thin film layer 2 needs to be able to withstand patterning.

In addition to the above-mentioned formation method, there is a control lattice layer formation method using the LB method. This method involves forming a control lattice layer by the LB method, and depending on the desired shape, conductive molecules or semiconductive molecules on the liquid surface and insulating or semi-insulating organic thin film layers 2 and 4. This is a method of forming a control lattice layer by developing molecules exhibiting a pattern in a pattern and transferring the patterned film-forming molecules onto the organic thin film layer 2. An example thereof will be briefly explained using FIG.

For example, as shown in FIG. 8a, film-forming molecules are spread out in a pattern on the liquid surface. One is an insulating or semi-insulating molecule such as araxic acid (this is referred to as molecule A), and the other is an electrically conductive or semiconductive molecule such as tetracyanoquidimethanandocylpyridinium (this is referred to as molecule B). ), these two types of molecules are placed on the liquid surface 17 as shown in FIG. 8a.

B, A, B... are developed alternately in the order of the liquid level 17.
On top, monomolecular films a and b consisting of molecules A and B are formed in stripes (for example, "l + bI + a2 + b2
...), the substrate lO is vertically moved up and down across the liquid level 17 and transferred as it is, and a parallel linear control grating layer as shown in FIG. 8b is formed on the substrate. It is formed on the IO.

Specifically, the above-mentioned spreading of the film-forming molecules on the liquid surface may be carried out, for example, as follows.

First, the film-forming molecule is dissolved in a required solvent, such as chloroform for the above-mentioned alaxic acid, or a (1:l)i mixture of acetonitrile and benzene for tetracyanoquidimethanandocylpyridinium, and the like. It is developed into an aqueous phase that has a moving barrier etc. that can make the area of the liquid surface variable. At this time, if you want to obtain a striped pattern as shown in FIG. 8b above, first, molecule A
is spread on the liquid surface 17, and the moving barrier 18-1 is moved forward to increase the surface pressure of the molecules to obtain a monomolecular film Al. At this time, the movable barrier 18-2 can be moved back and forth by the hook 18-3 in the same way as the movable barrier 18-1.

Next, a fixed barrier (not shown) for preventing film diffusion is provided adjacent to the moving barrier 18-1.

The moving barrier 18-1 is moved backward to spread the molecules B on the liquid surface. In this state, molecules B are spread between the migration barrier 18-1 and the monolayer a1, and the migration barrier is moved forward in the same manner as described above to obtain the monomolecular film bl. By repeating these operations sequentially, molecules A and B each become al
A striped pattern alternately repeated in the order + bl + a2 * b2 . . . is obtained on the liquid surface. At this time, it is preferable to move the fixed barrier sequentially each time molecules are spread on the liquid surface, and remove it after forming a pattern on the liquid surface.

By variously changing the shapes of the moving barrier and the fixed barrier, it is possible to obtain not only the above-mentioned stripe pattern but also a pattern of a desired shape on the liquid surface.

If the control lattice layer formation method using the LB method as described above is used, the organic thin film layer 2, the control lattice layer 3, and the organic thin film layer 4 are all L
It can be formed by method B, which is very advantageous.

Furthermore, in the present invention, since the carrier flowing in the organic thin film layer between a pair of electrodes is controlled by a control grid layer, the thickness between the electrodes is 10,000 OOA or less, preferably 1,000 OOA or less.
Must be below A.

In the present invention, the substrate for supporting the thin film as described above may be made of any material such as metal, glass, ceramics, or plastic materials, and biomaterials with extremely low heat resistance may also be used.

The above-mentioned substrate may have any shape and is preferably flat, but is not limited to a flat plate.

That is, the above film forming method has the advantage that a film can be formed in accordance with the shape of the surface of the substrate, no matter what shape it is.

On the other hand, the electrode material for sandwiching the organic thin film may be any material as long as it has high conductivity, such as Au.

Pt, Ag, Pd, AR, In, Sn, Pb
There are many materials including metals such as , alloys thereof, graphite, silicide, and even conductive oxides such as ITO, and these materials can be considered to be applied to the present invention. As a method for forming electrodes using such materials, conventionally known thin film techniques are sufficient. However, what should be noted here is that when forming an electrode on the LBllji in the production of an electric/electronic device element in the present invention,
The B layer must not be damaged, and for this purpose high temperatures (>1
Avoid manufacturing processes that require temperatures (00°C). In addition, the electrode material that is directly formed on the substrate must be made of a conductive material that does not form an insulating oxide film when forming the LB film on the surface, such as a noble metal or an oxide conductor such as ITO. It is preferable to use

[Example] The present invention will be explained in more detail by showing examples below.

Example 1 Base electrode (metal) 1/organic thin film layer (single molecule cumulative film) 2/control lattice layer (metal) 3/organic thin film layer (
A sample (FIG. 2) having a structure of monomolecular cumulative film) 4/upper electrode (metal) 5 was prepared. Figure 2a shows the top view;
Figure b shows a cross-sectional view when the sample is cut along the A-A' plane. -1.7-2.7-3 indicates an extraction electrode.

First, hydrophobic treatment (araxic acid Cd salt [C
On a glass substrate 10 (manufactured by Corning, 7059) on which three layers of H3(CH2)Is CO5.Cd2.1 were accumulated, Cr was vacuum deposited as an undercoat layer to a thickness of 500 A (resistance heating method, substrate temperature at room temperature). , further Au was evaporated by the same method (
Film thickness: 1000 A) I. This was used as the base electrode 11.

However, mask deposition was performed in the shape shown in FIG. 2a.

Using the substrate 6 as a carrier, araxic acid Cd is produced by the LB method.
A monomolecular film of salt was accumulated to create a cumulative film 2. Next, the details of the accumulation method are described.
The chloroform solvent in which H2) + aCOOH) was dissolved at a concentration of 1 rag/laR was mixed with KH (GdCh adjusted to pH 8.4 in 03 8 degrees 4 X 1O-4s + oi)/
j) The monomolecular film 1 is developed on the water phase at a water temperature of 20° C. and the monomolecular film 13 is formed on the water surface after the solvent is evaporated and removed.
The surface pressure of the substrate 6 was increased to 30+sN/g, and while keeping this constant, the substrate 6 was moved at a constant speed in the direction across the water surface.
After being gently immersed at ms/win, it was then gently pulled up at the same speed to accumulate a 2H Y-type monomolecular film. By repeating this operation an appropriate number of times, on the substrate 6,
Cumulative films 2 of 2, 4, 6.8 and 10 fi were formed, respectively.

Next, a striped pattern AJ (width t
A parallel linear control grid layer 3 was formed by vapor deposition using a mask (same method as for forming the base electrode). However, only the part of the extraction electrode 72 is coated with Aβ on the entire surface.
Next, 10 layers of 2, 4, and 6.8 monomolecular films of Araxin film Cd salt were accumulated in exactly the same manner as above, and the cumulative film 4
was formed, and then Au was deposited using a mask (thickness: 10 GOA) as the upper electrode 5 in the shape shown in FIG. 2a.

Next, in a sample with two layers of monomolecular cumulative films, for each of the lower electrode 1, control grid layer 3, and upper electrode 5? -1,7-2
，? At -3, I set up the probe and made contact.

Especially at this time? In case -1, contact was made by pressing the probe strongly to break through the monomolecular cumulative film layer. Furthermore, a DC power supply 8-1 for bias voltage VBP and an input signal power supply Vtn 8-2 are connected to the probe.
, input bias voltage vB, DC power supply 8-3, and load resistor RL 8-4 were connected to assemble the electric circuit shown in FIG. A metal film type 300Ω resistor was used for RL, and the potential VOut generated in the load resistance was observed with an oscilloscope (input resistance IMΩ) connected to both ends of the resistor.

First, the input signal source Vin 8-2 and VH2, 8-
3 (1) While keeping the output at Ov, increase the bias voltage Vep.
A bias voltage of IOV is applied between both ends of the electrode by the DC power source 8-1 for input bias voltage V[19].

Vibration Il@120mV, frequency 1 due to input signal source Vin
When a kHz sine wave was applied, a 1 kHz sine wave with an amplitude of 100 mV was obtained at both ends of the resistor. In other words, it was shown that such a sample functions as an amplification element.

Note that as long as the frequency was changed up to I GHz, the amplification factor hardly changed.

In addition, as a result of conducting similar studies on samples with 4, 6, 8, and 10 layers of monomolecular cumulative films, similar amplification characteristics were obtained, although the amplification characteristics deteriorated slightly as the number of layers increased.
It was shown that such a sample functions as an amplification element.

Example 2 The sample shown in FIG. 2 was prepared using the same method and composition as in Example 1, except that the number of monomolecular cumulative films of organic thin films 2 and 4 was changed. The number of monomolecular cumulative films at this time is shown in the table below.

Table 1 The number of layers of organic thin films 2 and 4 is 2 layers and 6 layers, respectively.
When the same experiment as in Example 1 was conducted on a sample with a total number of monomolecular cumulative film layers of 8, V was obtained. , t, a sine wave with the same frequency as Vin and an amplitude of 120 mV is obtained.

Better amplification characteristics were obtained than the sample shown in Example 1 in which the number of layers of organic thin films 2 and 4 was 4 each, and the total number of layers was 8.

In addition, other samples in the table (the total number of monomolecular cumulative film layers is 12 layers,
Similar results were obtained for samples with 18 layers and 20 layers, indicating that such samples functioned as amplification elements.

Example 3 The sample shown in Figure 2 was prepared using the same method and configuration as in Example 1, except that the material for organic thin films 2 and 4 was changed to poly-α-n-hexadecyl acrylic acid. . However, a monomolecular cumulative film of poly-α-n-hexadecyl acrylic acid was formed as follows.

Poly-α-n-hexadecyl acrylic acid (molecular weight lO
CdCIh concentration 5 x 10-' moj!, which was prepared by dissolving a benzene solution with a concentration of I x 10-3% (vat haol) and adjusting the pH to 8.7 with KHCO3. /i' and developed on an aqueous phase at a water temperature of 20°C to form a monomolecular film on the water surface. Waiting for the solvent to evaporate, the surface pressure of this monomolecular film is reduced to 1
The temperature was increased to 5 mN/s, and while keeping this constant, the substrate was immersed and pulled up at a speed of 3 am/win in the direction across the water surface to accumulate a monomolecular film. By repeating the above operation an appropriate number of times, 2, 4, 6.8 and 1, respectively.
A cumulative film 2 or 4 with 0 layers was created.

When the same experiment as in Example 1 was carried out on samples with two organic thin layers H2 and H4, a sine wave with the same frequency as Vin and an amplitude of about 110 layers V was obtained at Vout, and such an element functioned as an amplification element. It turns out that it does.

In addition, as a result of conducting similar studies on samples with 4, 6, 8, and 10 layers of monomolecular cumulative films, it was found that similar amplification characteristics were obtained, although the amplification characteristics deteriorated slightly as the number of calendars increased. It was shown that it functions as

Example 4 Organic Thin II! The sample shown in FIG. 2 was prepared in exactly the same manner and with the same configuration as in Example 1, except that the materials in Examples 2 and 4 were changed to poly-isobutyl methacrylate (PIBM). However, the monomolecular cumulative film of PIBM was formed as follows.

PIBM at a concentration of I x 10-3% (vol/vol)
The dissolved benzene solution was developed on an aqueous phase with a CdCh concentration of 5 x 10-'moR# adjusted to pH 8.7 with KHCO3 and a water temperature of 20°C.

A monomolecular film was formed on the water surface. After waiting for the solvent to evaporate and be removed, the surface pressure of this monomolecular film was increased to 15 mN/m, and while keeping this pressure constant, the substrate was moved at a speed I in the direction across the water surface.
Dipping and pulling were performed at Q+*m/win to accumulate a monomolecular film. By repeating this operation an appropriate number of times, cumulative films 2 and 4 having 2, 4, 6.8, and 10 layers, respectively, were created.

When the same experiment as in Example 1 was carried out on a sample with two layers of organic thin films 2 and 4, a sine wave with an amplitude of 100 V and the same frequency as Vin was obtained at vout, and the element functioned as an amplification element. It turns out that it does.

In addition, as a result of conducting similar studies on samples with 4, 6, 8, and 10 layers of monomolecular cumulative films, similar amplification characteristics were obtained, although the amplification characteristics deteriorated slightly as the number of calendars increased.
It was shown that such a sample functions as an amplification element.

Example 5 The sample shown in FIG. 2 was prepared in exactly the same manner and with the same configuration as in Example 1, except that the control grid layer 3 was formed using an organic material using the LB method.

First, in the same manner as in Example 1, a glass substrate was subjected to hydrophobic treatment, and then a base electrode l was formed, and an organic f! After forming a total of five samples of 2, 4° 6.8 and 10 layers of monomolecular cumulative films which will become the J film layer 2, the control grid layer 3 is formed.

Next, a fixed barrier 13 was placed adjacent to the moving barrier. After the migration barrier 18 was moved to the initial position, docosylpyridinium ditetracyanokidimethane was spread on the liquid surface between the monomolecular film of alexic acid and the migration barrier (see Figure 9d).

After removing the solvent by evaporation, the transfer barrier 18 was moved, the surface pressure was increased to 30 dyn/cm, and monomolecular Hb of docosylpyridinium-ditetracyanokidimethane was transferred adjacent to the monomolecular films of araxic acid. 20 layers were formed on the liquid surface (see Figure 9e).

After that, the same operation is repeated, and the 8th f is placed on the liquid level 17.
A striped pattern as shown in the figure was obtained.

Finally, by reciprocating the glass substrate on which the base electrode 1 and the organic thin film layer 2 are laminated across the liquid surface at a speed of losm/in to transfer the pattern on the liquid surface,
A parallel linear control lattice layer with a striped pattern was successfully formed using docosylpyridinium-ditetracyanoki dimethane as a conductive layer.

Thereafter, in the same manner as in Example 1, 10 layers of 2, 4, and 6.8 monomolecular films were accumulated to form a cumulative film 4, and then an upper electrode was laminated to prepare the second sample.

As a result of conducting the same experiment as in Example 1 using the samples prepared as described above, almost the same amplification characteristics were obtained for all the samples of this example, and it was confirmed that the samples functioned as amplification elements. Shown.

In the embodiments described above, organic thin film layers 2 and 4 have 7
Although a rachidic acid film was used, the film is not limited to this as long as it is an insulating or semi-insulating material, and the formation method is not limited to the LB method. Any film forming method that can produce an organic thin film exhibiting properties can be used. Specifically, vacuum evaporation methods, electrolytic polymerization methods, CVO methods, etc. are mentioned, and the range of usable organic materials is expanded. Furthermore, the shape of the control grid layer sandwiched between the organic thin films is not limited to the parallel linear shape described in the examples, but may be any shape that can control the flow of the carrier and at the same time allow the carrier to pass through. Examples include a mesh shape, a hole shape, and the like. Also, any film forming method that can create a control lattice layer having the above-mentioned functions can be used.

Furthermore, the present invention does not limit the substrate material or its shape in any way.

[Effects of the Invention] As explained above, an insulating or semi-insulating organic thin film is arranged between a pair of electrodes, and the flow of carriers such as electrons and holes is controlled in the organic thin film, and at the same time the carriers are By providing a control grid region with a shape that allows it to pass through, we were able to realize an electrical/electronic device element with an amplification effect. At the same time, since it is only necessary to use organic materials, there is a high degree of freedom in materials, and since films can be formed using the LB method, film thickness control on the molecular order (several A to several dozen) can be easily realized. Since the reproducibility when forming elements is improved and the film forming apparatus itself is inexpensive, it has become possible to provide electrical/electronic device elements that can be manufactured economically.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of the electric/electronic device element of the present invention.
Figures 2d and 2b are a plan view and a cross-sectional view of the sample prepared in the example. FIG. 3 is an electrical circuit diagram of a measuring instrument used when measuring the amplification characteristics of the present invention. FIG. 4 is a diagram schematically showing a method of forming an organic thin film layer of the present invention by the LB method. Figures 5a and 5b are schematic diagrams of monomolecular films, and Figures 6a, 8b, and 8c are schematic diagrams of cumulative films. FIG. 7 is an example of the shape of the control grid layer of the present invention. 8a and 8a to 9f are views schematically showing a method of forming the control grating layer of the present invention by the LB method, and FIG. 8b shows the formed pattern.

Claims (2)

[Claims] (1) In an element consisting of a pair of electrodes and an organic thin film placed between the electrodes, the organic thin film has a shape that controls the flow of carriers, such as electrons or holes, and at the same time allows the carriers to pass through the organic thin film. An electrical/electronic device element characterized by having a control grid region. (2) The electric/electronic device element according to claim 1, wherein the organic thin film is a thin film of an organic compound having a hydrophilic site and a hydrophobic site within the molecule.