JPH01209739A - Sucking jig for semiconductor element - Google Patents
Sucking jig for semiconductor elementInfo
- Publication number
- JPH01209739A JPH01209739A JP63034380A JP3438088A JPH01209739A JP H01209739 A JPH01209739 A JP H01209739A JP 63034380 A JP63034380 A JP 63034380A JP 3438088 A JP3438088 A JP 3438088A JP H01209739 A JPH01209739 A JP H01209739A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic body
- ceramic
- jig
- suction
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000919 ceramic Substances 0.000 claims abstract description 40
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000008188 pellet Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229920004943 Delrin® Polymers 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は半導体素子を空気吸引力で吸引保持して移送す
る半導体素子吸引治具に関する。DETAILED DESCRIPTION OF THE INVENTION [Purpose of the Invention (Industrial Application Field) The present invention relates to a semiconductor device suction jig that suctions and holds a semiconductor device using air suction force and transfers the semiconductor device.
（従来の技術）
例えばＳｔやＧｅなどの半導体素子を用いた回路基板を
製作する場合には、ウェハに３ｔやＧのなどの半導体回
路を作り込んで半導体素子であるペレッ）１−製作し、
このペレットヲ回路基板に装着して、ベレットと回路基
板に形成した回路とを電気的に接続するようにしている
。(Prior art) For example, when manufacturing a circuit board using a semiconductor element such as St or Ge, a semiconductor circuit such as 3T or G is fabricated on a wafer and the semiconductor element (Pellet) is manufactured.
This pellet is mounted on a circuit board to electrically connect the pellet to a circuit formed on the circuit board.
そして、この回路基板の製造において、半導体素子のペ
レットを回路基板に取付ける工程では、移送用シャンク
の先端部に空気吸引装置に接続したグイコレットと呼ば
れる吸引治具を取付けた装置を使用し、吸引治具でベレ
ットを吸引保持して移送シャンクを回路基板まで移動さ
せることによシペレットを回路基板の表面上の所定位置
まで移送している。この工程で使用する吸引治具は、空
気吸引装置に接続する空気孔を中心軸線上に形成すると
ともに、先端部に空気孔に接続した吸引口を形成し、ま
た基端部には移送シャンクに取付けるためのねじなどの
取付部を形成して構成し、空気吸引装置により吸引口か
ら空気孔を通して外部の空気を吸引することにより、吸
引口にペレットを吸引して保持するようにしたものであ
る。In the manufacturing of this circuit board, in the process of attaching semiconductor element pellets to the circuit board, a device with a suction jig called a guicolet connected to an air suction device is used at the tip of the transfer shank. The pellet is transferred to a predetermined position on the surface of the circuit board by suctioning and holding the pellet with a tool and moving the transfer shank to the circuit board. The suction jig used in this process has an air hole connected to the air suction device on the central axis, a suction port connected to the air hole at the tip, and a transfer shank at the base end. It is configured by forming a mounting part such as a screw for mounting, and by sucking external air from the suction port through the air hole with an air suction device, the pellets are sucked into the suction port and held. .
そして、従来の吸引治具は超硬合金、デルリンあるいは
サファイアなどの広い範囲のものを材料として形成して
いた。Conventional suction jigs have been made of a wide range of materials such as cemented carbide, Delrin, and sapphire.
（発明が解決しようとする課題）
しかして、前記のようにして使用される半導体素子吸引
治具は、ペレットを吸引する時にペレットが吸引口に衝
突するとともに、この吸引が連続して反復されるので、
優れた耐衝撃性と耐摩耗性を有することが要求される。(Problem to be Solved by the Invention) However, in the semiconductor device suction jig used as described above, the pellet collides with the suction port when sucking the pellet, and this suction is continuously repeated. So,
It is required to have excellent impact resistance and abrasion resistance.
また、ペレットを回路基板に配置した後に続けてペレッ
トを回路基板と電気的に接続するためにハンダ付けを行
なっておシ、吸引治具はこのハンダ付けに伴う２００〜
２５０℃の高温の雰囲気の中で使用されるので耐熱性も
要求される。In addition, after placing the pellets on the circuit board, soldering is performed to electrically connect the pellets to the circuit board.
Since it is used in a high temperature atmosphere of 250°C, heat resistance is also required.
これに対して従来の吸引治具において、超硬合金および
デルリンで形成したものは耐摩耗性、耐衝撃性および耐
熱性の各特性がいずれも充分で無く、この結果として耐
久性が悪いという問題がある。また、サファイアによ多
形成したものは前記の各特性が夫々優れているが、超硬
合金およびデルリンで形成したものに比較して遥かに高
価であり、このことが半導体素子の製造コストにはね返
るという問題がある。In contrast, conventional suction jigs made of cemented carbide and Delrin lack sufficient wear resistance, impact resistance, and heat resistance, resulting in poor durability. There is. Additionally, although multi-layered sapphire has each of the above-mentioned properties, it is much more expensive than those formed from cemented carbide and Delrin, which increases the cost of manufacturing semiconductor devices. There is a problem.
本発明はこのような問題点を解決するためのもので、耐
久性に優れて安価な半導体素子吸引治具を提供すること
を目的とする。The present invention is intended to solve these problems, and it is an object of the present invention to provide a semiconductor element suction jig that is highly durable and inexpensive.
［発明の構成コ
（課題を解決するための手段と作用）
本発明者は半導体素子吸引治具について種々研究を重ね
てた。この結果、吸引治具の耐久性を高めるには従来の
ように金属および合成樹脂で形成していたのでは限界が
あり、新しい材料を採用して形成することが必要である
との結論に達した。[Configuration of the Invention (Means and Effects for Solving the Problems) The present inventor has conducted various studies on semiconductor device suction jigs. As a result, we came to the conclusion that there is a limit to increasing the durability of suction jigs when they are conventionally made of metal and synthetic resin, and that it is necessary to use new materials to make them. did.
そして、吸引治具を形成する材料としてセラミックスが
適しておシ、なかでも炭化けい素およびジルコニアが耐
衝撃性、耐摩耗性および耐熱性が優れていて長期にわた
り損傷が少なく最適であることを見出した。さらＫ、発
明者は吸引治具をセラミックスで形成しただけでは不充
分であシ、吸引治具における吸引した半導体素子ペレッ
トが接触する表面の粗さｔ６る特定の範囲に設定するこ
とＫよシ、セラミックスの特性２ペレツトを吸引する治
具に最も生かすことができることを見出した。We discovered that ceramics are suitable as materials for forming the suction jig, and that silicon carbide and zirconia are particularly suitable for their excellent impact resistance, abrasion resistance, and heat resistance, with little damage over a long period of time. Ta. Furthermore, the inventor found that it is not sufficient to simply make the suction jig made of ceramics, and that the roughness of the surface of the suction jig with which the sucked semiconductor element pellets come into contact is set within a specific range t6. It was discovered that the two characteristics of ceramics can be best utilized in a jig for sucking pellets.
本発明はこの知見に基づいてなされたものである。The present invention has been made based on this knowledge.
本発明の半導体素子吸引治具は、空気吸引力で半導体素
子を吸引保持して移送する治具であって、少なくとも吸
引した半導体素子が接触する先端部をセラミックスで形
成し、且つこの先端部の表面の粗さを０．３〜１．５μ
ｍとすることを特徴とするものである。The semiconductor element suction jig of the present invention is a jig that suctions and holds a semiconductor element using air suction force and transfers the semiconductor element. Surface roughness 0.3~1.5μ
It is characterized in that it is m.
本発明の半導体素子吸引治具の基本的な態様を第１図に
ついて説明する。A basic aspect of the semiconductor device suction jig of the present invention will be explained with reference to FIG.
図面で示す吸引治具は、半導体素子を吸引する部分を形
成するセラミックス体１と移送シャンクに取付ける部分
を形成する金属体２とを連結して構成したもので、セラ
ミックス体１と金属体２の中心軸線に涜って共通に空気
孔３が形成しである。The suction jig shown in the drawing is constructed by connecting a ceramic body 1 which forms a part for sucking semiconductor elements and a metal body 2 which forms a part to be attached to a transfer shank. Air holes 3 are formed in common along the central axis.
セラミックス体１は一方の端部に空気孔３と接続するテ
ーパ形の吸引口４が形成してあシ、他方の端部には凸形
の連結部５が形成しである。金属体２は一方の端部に凹
形の連結部６が形成してあシ、他方の端部には移送シャ
ンクに取付けるための取付部７例えばねじ部が形成しで
ある。The ceramic body 1 has a tapered suction port 4 formed at one end that connects to an air hole 3, and a convex connecting portion 5 formed at the other end. The metal body 2 is formed at one end with a concave coupling part 6, and at the other end is formed with an attachment part 7, for example a threaded part, for attachment to the transfer shank.
セラミックス体ｌはジルコニア（Ｚｒ０ｚ ） 、炭化
けい素（ｓｔｃ ） 、窒化けい素（８１，Ｎ４）、ア
ルミナ（Ａｔ２０． ）などのセラミックスの焼結体で
形成されている。なかでもジルコニアと炭化けい素が耐
衝撃性、耐摩耗性および耐熱性に優れており、吸引治具
のセラミックス体１を形成する材料として最適である。The ceramic body 1 is formed of a sintered body of ceramics such as zirconia (Zr0z), silicon carbide (stc), silicon nitride (81,N4), and alumina (At20.). Among them, zirconia and silicon carbide have excellent impact resistance, abrasion resistance, and heat resistance, and are most suitable as materials for forming the ceramic body 1 of the suction jig.
セラミックス体１の吸引口４０表面は表面粗さが０．３
〜１．５μｍ好ましくは０．３〜０，８μｍの範囲とな
るように仕上げられている。なお、吸引口４のテーノＪ
？角度は６０〜１２０度の範囲に設定されている。The surface of the suction port 40 of the ceramic body 1 has a surface roughness of 0.3.
It is finished to have a thickness in the range of ~1.5 μm, preferably 0.3 ~ 0.8 μm. In addition, Theno J with suction port 4
? The angle is set in the range of 60 to 120 degrees.
このセラミックス体１を製作するに際しては、常圧焼結
によりセラミックス焼結体を形成する、この焼結に際し
ては、高密度化を図る友めに焼結助剤としてイツトリア
（ｙ２ｏ、 ）、アルミナ（Ａｔ２０３）、窒化アルミ
ニウム（ＡｔＮ ）、酸化チタン（ＴｉＯ□）を添加す
る。具体的な成分組成は、ジルコニアの場合には、Ｚｒ
Ｏ□５０〜９５重量部、Ｙ２Ｏ３０，１〜４０ ！ｊｉ
部、Ａｔ２０．１〜４０ ｉｉｉ部、ＡｔＮ０〜２５重
量部、ＴｉＯ□０〜１０重量部であり、炭化けい素の場
合には、ＳｉＣ５０〜１ｏｏ重量部、Ｂ４Ｃまたは８０
．１〜２０重量部、Ｃ０，５〜２０重量部である。さら
に焼結体にＨＩＰ （静水圧ホットブレス焼結）処理を
行なうと、−層焼結体の密度を高めることができる。ま
た、セラミックス体のベレット吸引部にラップ加工を施
してその表面を前記範囲の粗さに仕上げる。When producing this ceramic body 1, a ceramic sintered body is formed by pressureless sintering. During this sintering, itria (y2o, ) and alumina ( At203), aluminum nitride (AtN), and titanium oxide (TiO□) are added. In the case of zirconia, the specific component composition is Zr
O□50-95 parts by weight, Y2O30,1-40! ji
parts, At20.1 to 40 parts by weight, AtN0 to 25 parts by weight, TiO□0 to 10 parts by weight, and in the case of silicon carbide, SiC50 to 10 parts by weight, B4C or 80 parts by weight.
．． 1 to 20 parts by weight, and 5 to 20 parts by weight. Further, by subjecting the sintered body to HIP (hydrostatic pressure hot breath sintering) treatment, the density of the -layer sintered body can be increased. Further, the pellet suction portion of the ceramic body is lapped to finish its surface to a roughness within the above range.
金属体２は耐食性および耐熱性に優れた金属、例えばス
テンレス鋼で形成する。The metal body 2 is made of a metal with excellent corrosion resistance and heat resistance, such as stainless steel.
セラミックス体１と金属体２は夫々の連結部５゜６を相
互に組合わせ、例えばロウ付接合等８により固定する。The ceramic body 1 and the metal body 2 are assembled together at their respective connecting portions 5 and 6 and fixed by, for example, soldering or the like 8.
そして、この吸引治具は半導体素子を用いた装置例えば
回路基板を製造する製造工程のなかで、半導体素子を吸
引して移送する治具として使用する。すなわち、金属体
２の取付部７を移送シャンク（図示せず）に取付け、空
気孔３の金属体２で開口する開口端を空気吸引装置に接
続する。そして、外部の空気をセラミックス体１の吸引
口４がら空気孔３ｔ−通して空気吸引装置に吸引してい
る状態で、セラミックス体１の吸引口４を半導体素子で
あるＩＣのベレット１０に接近させると、図面で示すよ
うにベレット１０が吸引されてセラミックス体１の吸引
口４に接触して保持される。この状態で移送シャンクを
移動させて吸引保持されたベレット１０を回路基板まで
移送してその表面の所定位置に配置する。吸引治具はこ
の動作を連る吸引口４を有する部分を、耐衝撃性、耐摩
耗性および耐熱性に優れたセラミックス体１で形成しで
ある。セラミックス体１はペレッ隅吸引する毎にベレッ
トが吸引口４に衝突して衝撃力を受けるが、この連続し
て作用する衝撃に対して長期にわたシ充分に摩耗および
破損を抑制することがでハンダ付けする時に２００〜２
５０℃程度の熱を受けても、長期にわた９表面部が劣化
することがなく安定した品質で使用することができる。This suction jig is used as a jig for sucking and transporting semiconductor elements in a manufacturing process for manufacturing devices such as circuit boards using semiconductor elements. That is, the attachment part 7 of the metal body 2 is attached to a transfer shank (not shown), and the open end of the air hole 3 that opens at the metal body 2 is connected to an air suction device. Then, while external air is being sucked into the air suction device through the suction port 4 of the ceramic body 1 through the air hole 3t, the suction port 4 of the ceramic body 1 is brought close to the pellet 10 of the IC, which is a semiconductor element. Then, as shown in the drawing, the pellet 10 is attracted and held in contact with the suction port 4 of the ceramic body 1. In this state, the transfer shank is moved to transfer the suction-held pellet 10 to the circuit board and place it at a predetermined position on the surface of the circuit board. The suction jig has a portion having a suction port 4 that performs this operation, and is made of a ceramic body 1 having excellent impact resistance, abrasion resistance, and heat resistance. The ceramic body 1 is subjected to impact force as the pellet collides with the suction port 4 every time the pellet corner is suctioned, but wear and damage can be sufficiently suppressed over a long period of time against this continuous impact. 200~2 when soldering
Even when subjected to heat of about 50° C., the nine surface parts do not deteriorate over a long period of time, and can be used with stable quality.
また、セラミックス体１の吸引口４の表面の粗さが０．
３〜１．５μＦＦＩＫ設定しであるため、吸引されたベ
レット１０が吸引口４の表面に接触した時にベレット１
０のウェハをセラミックス体１が傷つけることがなく、
且つ吸引されたベレット１０が吸引口４の表面に接触し
た時に渭って吸引口４から落下することがなく、ベレッ
ト１０ｆ、安全に且つ確実に吸引して移送することがで
きる。すなわち、この吸引口４の表面粗さは、吸引した
ベレット１ｏが表面に接触した時に、ベレット１０が破
損する程粗くはなく、しかもベレット１０が滑ってしま
う程平滑では無く、ベレット１０が清らない程度の摩擦
抵抗が得られるものである。つまり、セラミックス体１
の表面はそＯままであると、粗すぎて衝突した（レット
１０のウェハを破損することＫなる。Further, the surface roughness of the suction port 4 of the ceramic body 1 is 0.
Since the setting is 3 to 1.5 μFFIK, when the sucked pellet 10 contacts the surface of the suction port 4, the pellet 1
Ceramic body 1 does not damage wafer 0,
Moreover, when the sucked pellet 10 comes into contact with the surface of the suction port 4, it does not waver and fall from the suction port 4, and the pellet 10f can be safely and reliably sucked and transferred. That is, the surface roughness of the suction port 4 is not so rough that the pellet 10 will be damaged when the sucked pellet 1o comes into contact with the surface, nor is it so smooth that the pellet 10 will slip. It is possible to obtain a certain level of frictional resistance. In other words, ceramic body 1
If the surface is left as it is, it will be too rough and will collide (damage to the wafer at 10).
また、セラミックス体１は溶けたハンダに触れてもぬれ
性が無く良好であった。Moreover, the ceramic body 1 did not have wettability even when it came into contact with melted solder, and was good.
なお、上述の説明は吸引治具のベレットを吸引する部分
のみをセラミックスで形成したが、この構成は移送シャ
ンクに取付ける部分のねじを容易に加工できる利点があ
る。しかし、これに限定さ（実施例）
以下本発明の一実施例について説明する・第１図で示す
吸引治具を製作するためにセラミックス体と金属体を形
成した。セラミックス体を形成するに際しては、ＺｒＯ
２９５重量部、Ｙ２Ｏ，５ｉ量部の成分の粉末を成形圧
１トン／１２Ｉ２で加圧した後に、酸素雰囲気、温度１
６００℃、時間６０分の条件で焼結してセラミックス体
音形成した。その後セラミックス体の吸引口の表面をラ
ッピングにより表面粗さ０．４μｍに仕上げた。このセ
ラミックス体の特性は次の通シであった。破壊靭性筐は
９、７ ＭＰａ−ｍ １７２ 、圧縮強度４００ ｋｇ
・ｆ／ｍ２ テ；％ 、 タ。In the above explanation, only the part of the suction jig that suctions the pellet is made of ceramic, but this structure has the advantage that the thread of the part to be attached to the transfer shank can be easily machined. However, it is limited to this (Example) An example of the present invention will be described below. A ceramic body and a metal body were formed in order to manufacture the suction jig shown in FIG. When forming a ceramic body, ZrO
After pressurizing powder containing 295 parts by weight and 5i parts of Y2O at a molding pressure of 1 ton/12I2, the powder was heated in an oxygen atmosphere at a temperature of 1
Ceramic body tone was formed by sintering at 600°C for 60 minutes. Thereafter, the surface of the suction port of the ceramic body was finished by lapping to a surface roughness of 0.4 μm. The characteristics of this ceramic body were as follows. Fracture toughness of the casing is 9.7 MPa-m 172, compressive strength 400 kg
・f/m2 te;%, ta.
耐熱性としては温度３６０”ｋ測定した。この結果は良
好であった。また、金属体はステンレス鋼（ＳＵ８３０
４）で形成した。セラミックス体と金属体をろう付けで
接着して吸引治具を製作した。この吸引治具をペレット
移送シャンクに取付けてペレットの移送に使用した。こ
の結果長時間使用しても何等破損や大きな摩耗が無く支
障なく使用できた。The heat resistance was measured at a temperature of 360"k. The results were good. Also, the metal body was made of stainless steel (SU830
4). A suction jig was manufactured by bonding a ceramic body and a metal body together using brazing. This suction jig was attached to a pellet transfer shank and used to transfer pellets. As a result, it was possible to use it for a long time without any damage or major wear and tear.
［発明の効果］
以上説明したように本発明の半導体素子吸引治具によれ
ば、セラミックスで形成したので、安価であシなから耐
久性に優れ長期にわたり安定して使用することができる
。特にジルコニアまたは炭化けい素で形成することによ
シ、耐衝撃性、耐摩耗性および耐熱性を高めることがで
きる。[Effects of the Invention] As explained above, since the semiconductor device suction jig of the present invention is made of ceramic, it is inexpensive and durable, and can be used stably over a long period of time. In particular, by forming it with zirconia or silicon carbide, impact resistance, abrasion resistance, and heat resistance can be improved.
を示す一部切欠正面図である。It is a partially cutaway front view showing.
１・・・セラミックス体、２・・・金属体。1...Ceramic body, 2...Metal body.
第１図Figure 1
Claims (3)
る治具であって、少なくとも吸引した前記半導体素子が
接触する先端部がセラミックスで形成され、且つこの先
端部の表面粗さが０．３〜１．５μｍであることを特徴
とする半導体素子吸引治具。(1) A jig for suctioning and holding a semiconductor element using air suction force and moving it, in which at least the tip with which the sucked semiconductor element comes into contact is formed of ceramics, and the surface roughness of the tip is 0. A semiconductor device suction jig characterized in that the diameter is 3 to 1.5 μm.
載の半導体素子吸引治具。(2) The semiconductor device suction jig according to claim 1, wherein the ceramic is zirconia.
載の半導体素子吸引治具。(3) The semiconductor device suction jig according to claim 1, wherein the ceramic is silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63034380A JPH01209739A (en) | 1988-02-17 | 1988-02-17 | Sucking jig for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63034380A JPH01209739A (en) | 1988-02-17 | 1988-02-17 | Sucking jig for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01209739A true JPH01209739A (en) | 1989-08-23 |
Family
ID=12412563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63034380A Pending JPH01209739A (en) | 1988-02-17 | 1988-02-17 | Sucking jig for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01209739A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383349A (en) * | 1989-08-28 | 1991-04-09 | Toshiba Corp | Collet for die bonding |
| JPH0745315A (en) * | 1993-07-30 | 1995-02-14 | Asahi Glass Co Ltd | Static electricity removing member |
| US6024393A (en) * | 1996-11-04 | 2000-02-15 | Applied Materials, Inc. | Robot blade for handling of semiconductor substrate |
| US6152506A (en) * | 1997-07-22 | 2000-11-28 | Matsushita Electric Industrial Co., Ltd. | Nozzle block of electronic part suction holding nozzle |
| JP2010080915A (en) * | 2008-08-28 | 2010-04-08 | Kyocera Corp | Vacuum suction nozzle assembly |
| US8128078B2 (en) | 2005-03-09 | 2012-03-06 | Ihi Corporation | Jig |
-
1988
- 1988-02-17 JP JP63034380A patent/JPH01209739A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383349A (en) * | 1989-08-28 | 1991-04-09 | Toshiba Corp | Collet for die bonding |
| JPH0745315A (en) * | 1993-07-30 | 1995-02-14 | Asahi Glass Co Ltd | Static electricity removing member |
| US6024393A (en) * | 1996-11-04 | 2000-02-15 | Applied Materials, Inc. | Robot blade for handling of semiconductor substrate |
| US6199927B1 (en) | 1996-11-04 | 2001-03-13 | Applied Materials, Inc. | Robot blade for handling of semiconductor substrates |
| US6152506A (en) * | 1997-07-22 | 2000-11-28 | Matsushita Electric Industrial Co., Ltd. | Nozzle block of electronic part suction holding nozzle |
| US6282787B1 (en) * | 1997-07-22 | 2001-09-04 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for an electronic part absorbing nozzle |
| US8128078B2 (en) | 2005-03-09 | 2012-03-06 | Ihi Corporation | Jig |
| JP2010080915A (en) * | 2008-08-28 | 2010-04-08 | Kyocera Corp | Vacuum suction nozzle assembly |
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