JPH01204292A - Semiconductor storage - Google Patents

Semiconductor storage

Info

Publication number
JPH01204292A
JPH01204292A JP63027223A JP2722388A JPH01204292A JP H01204292 A JPH01204292 A JP H01204292A JP 63027223 A JP63027223 A JP 63027223A JP 2722388 A JP2722388 A JP 2722388A JP H01204292 A JPH01204292 A JP H01204292A
Authority
JP
Japan
Prior art keywords
reading
writing
decoder
port
correspond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63027223A
Other languages
Japanese (ja)
Other versions
JP2618422B2 (en
Inventor
Shigeru Fujii
Shunichi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63027223A priority Critical patent/JP2618422B2/en
Publication of JPH01204292A publication Critical patent/JPH01204292A/en
Application granted granted Critical
Publication of JP2618422B2 publication Critical patent/JP2618422B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To attain high speed reading to correspond to a request in a reading side without using a special memory cell, which intends high speed operation in a writing side, by causing a reading port and a writing port to be pipe-line structure, in which the number of steps is respectively different.
CONSTITUTION: When address information are given to the reading port or the writing port, a memory cell 14 to correspond to the address information is selected by a reading decoder 3 or a writing decoder 13 and the reading or writing of storing information is executed by a read amplifier or a write amplifier 15. Before and after the reading decoder 3 and read amplifier, the pipe-line structure of the latch of the plural steps is provided to hold data in the reading side based on a clock signal CLK. Then, before and after the writing decoder 13 and write amplifier 15, the pipe-line structure of the latch of the step number, which is different from the reading side, is provided to hold the data in the writing side based on the clock signal CLK. Thus, while the writing is executed with comparatively low speed operation to correspond to a speed in the writing side, the reading speed can be easily improved at a low cost.
COPYRIGHT: (C)1989,JPO&Japio
JP63027223A 1988-02-08 1988-02-08 Semiconductor storage device Expired - Lifetime JP2618422B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63027223A JP2618422B2 (en) 1988-02-08 1988-02-08 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63027223A JP2618422B2 (en) 1988-02-08 1988-02-08 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPH01204292A true JPH01204292A (en) 1989-08-16
JP2618422B2 JP2618422B2 (en) 1997-06-11

Family

ID=12215098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63027223A Expired - Lifetime JP2618422B2 (en) 1988-02-08 1988-02-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JP2618422B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0589664A (en) * 1991-09-27 1993-04-09 Nec Corp Dynamic random-access memory device
US5963483A (en) * 1997-08-28 1999-10-05 Hitachi, Ltd. Synchronous memory unit
KR100501749B1 (en) * 1996-12-26 2005-10-28 프리스케일 세미컨덕터, 인크. Pipeline Fast Access Floating Gate Memory Architecture and How It Works
JP2007164888A (en) * 2005-12-13 2007-06-28 Matsushita Electric Ind Co Ltd Semiconductor storage device
JP2008269751A (en) * 2007-04-25 2008-11-06 Semiconductor Energy Lab Co Ltd Semiconductor memory device and electronic equipment having semiconductor memory device
JP2009070474A (en) * 2007-09-13 2009-04-02 Panasonic Corp Semiconductor integrated circuit
JP2010510615A (en) * 2006-11-17 2010-04-02 フリースケール セミコンダクター インコーポレイテッド 2-port SRAM with improved write operation
JP2013524396A (en) * 2010-04-02 2013-06-17 アルテラ コーポレイション Memory elements with soft error upset insensitivity

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148692A (en) * 1984-12-24 1986-07-07 Nippon Telegr & Teleph Corp <Ntt> Memory device
JPS61237289A (en) * 1985-04-15 1986-10-22 Ibm Pipeline type memory system
JPS62217481A (en) * 1986-03-18 1987-09-24 Fujitsu Ltd Multiport memory circuit
JPS62222490A (en) * 1985-12-18 1987-09-30 Brooktree Corp Converter system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148692A (en) * 1984-12-24 1986-07-07 Nippon Telegr & Teleph Corp <Ntt> Memory device
JPS61237289A (en) * 1985-04-15 1986-10-22 Ibm Pipeline type memory system
JPS62222490A (en) * 1985-12-18 1987-09-30 Brooktree Corp Converter system
JPS62217481A (en) * 1986-03-18 1987-09-24 Fujitsu Ltd Multiport memory circuit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0589664A (en) * 1991-09-27 1993-04-09 Nec Corp Dynamic random-access memory device
KR100501749B1 (en) * 1996-12-26 2005-10-28 프리스케일 세미컨덕터, 인크. Pipeline Fast Access Floating Gate Memory Architecture and How It Works
US5963483A (en) * 1997-08-28 1999-10-05 Hitachi, Ltd. Synchronous memory unit
JP2007164888A (en) * 2005-12-13 2007-06-28 Matsushita Electric Ind Co Ltd Semiconductor storage device
JP2010510615A (en) * 2006-11-17 2010-04-02 フリースケール セミコンダクター インコーポレイテッド 2-port SRAM with improved write operation
JP2013257937A (en) * 2006-11-17 2013-12-26 Freescale Semiconductor Inc Two-port sram performing improved write operation, and operation method thereof
JP2008269751A (en) * 2007-04-25 2008-11-06 Semiconductor Energy Lab Co Ltd Semiconductor memory device and electronic equipment having semiconductor memory device
JP2009070474A (en) * 2007-09-13 2009-04-02 Panasonic Corp Semiconductor integrated circuit
JP2013524396A (en) * 2010-04-02 2013-06-17 アルテラ コーポレイション Memory elements with soft error upset insensitivity

Also Published As

Publication number Publication date
JP2618422B2 (en) 1997-06-11

Similar Documents

Publication Publication Date Title
JPH03250500A (en) Semiconductor memory
JPH01204292A (en) Semiconductor storage
JPS60178562A (en) Data transfer method
JPH01277397A (en) Method and device for storing and reading information
JPS60197997A (en) Semiconductor storage device
JPS618791A (en) Static semiconductor memory
JPS63145582A (en) Data storage system
JPS63184991A (en) Random access memory
JPH01128295A (en) Semiconductor memory device
JPH02137184A (en) Semiconductor storage device
JPH04145552A (en) Cache storage device
JPS63253600A (en) Circuit for detecting fault of memory cell
JPH0489698A (en) Writable non-volatile memory
JPS61269264A (en) Information recording device
JPH03278394A (en) Synchronous sram device
JPS62147549A (en) Storage device
JPS62154286A (en) Write access system for rewritable memory
JPH04336644A (en) Storage device
JPS62121528A (en) Disk device
JPH0243645A (en) Storage device
JPS6132150A (en) Storage device
JPH01307329A (en) Reception circuit
JPH02226351A (en) Data writing and reading device
JPS53141518A (en) Storing system
JPH01265358A (en) Bit reversing circuit