JPH01203943A - Evaluating method for clean room - Google Patents
Evaluating method for clean roomInfo
- Publication number
- JPH01203943A JPH01203943A JP2929488A JP2929488A JPH01203943A JP H01203943 A JPH01203943 A JP H01203943A JP 2929488 A JP2929488 A JP 2929488A JP 2929488 A JP2929488 A JP 2929488A JP H01203943 A JPH01203943 A JP H01203943A
- Authority
- JP
- Japan
- Prior art keywords
- clean room
- air
- pure water
- particles
- meter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title description 6
- 239000002245 particle Substances 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000003749 cleanliness Effects 0.000 claims description 7
- 238000011156 evaluation Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 9
- 230000005587 bubbling Effects 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000000428 dust Substances 0.000 abstract description 3
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- -1 ionic molecules Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Ventilation (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、クリーンルームの清浄度の評価方法に関し、
クリーンルームの洗浄度をパーティクルの大きさ、数の
測定結果だけでなく、総合的評価可能な方法を提供する
ことを目的とし、クリーンルーム内の空気中に浮遊する
パーティクル測定結果およびクリーンルーム内雰囲気成
分測定結果に基いて、該ルーム内の清浄度を評価する。[Detailed Description of the Invention] [Summary] The present invention relates to a method for evaluating the cleanliness of a clean room.
The purpose is to provide a method that can comprehensively evaluate the cleanliness of a clean room, not only by measuring the size and number of particles, but also by measuring the particles floating in the air inside the clean room and the results of measuring the components of the atmosphere in the clean room. The cleanliness in the room is evaluated based on the following.
本発明は、半導体装置等の製造に使用されるクリーンル
ームの評価方法に関する。The present invention relates to a method for evaluating a clean room used for manufacturing semiconductor devices and the like.
近年、半導体装置の微細化、高集積化に伴い、半導体装
置の製造設備を設置したクリーンルーム内を高い清浄度
に保つことが必要となる。半導体装置の製造において、
空気中に浮遊する塵芥の粒子（パーティクル）の大きさ
や数が半導体装置の製造歩留りに決定的な影響を与える
ことは知られている。従って従来はクリーンルームの評
価として、一般にパーティクルの大きさ、数によって行
われている。パーティクルの測定にはレーザ光線を利用
して空気中のパーティクルを測定するパーティクルカウ
ンタ等が一般に使用されている。In recent years, as semiconductor devices have become smaller and more highly integrated, it has become necessary to maintain a high degree of cleanliness in a clean room in which semiconductor device manufacturing equipment is installed. In the manufacturing of semiconductor devices,
It is known that the size and number of dust particles floating in the air have a decisive impact on the manufacturing yield of semiconductor devices. Therefore, in the past, clean rooms have generally been evaluated based on the size and number of particles. To measure particles, a particle counter or the like that measures particles in the air using a laser beam is generally used.
ところでクリーンルーム内の雰囲気中には、半導体装置
の製造装置や、薬品等から発する各種ガス、イオン分子
、金属分子等が拡散しており、クリーンルーム雰囲気中
を汚染している。例えば有機酸性ガスの影響で半導体製
造設備９機械等を腐食劣化させ、製造装置の寿命を短縮
したり。By the way, various gases, ions, metal molecules, etc. emitted from semiconductor device manufacturing equipment, chemicals, etc. are diffused in the atmosphere inside the clean room, contaminating the atmosphere inside the clean room. For example, the effects of organic acidic gases can cause corrosion and deterioration of semiconductor manufacturing equipment, 9 machines, etc., shortening the lifespan of manufacturing equipment.
又半導体装置の製造工程において悪影響を与え製造歩留
りの低下をきたしている。Moreover, it has an adverse effect on the manufacturing process of semiconductor devices, resulting in a decrease in manufacturing yield.
従って従来のようにクリーンルームの評価として単にパ
ーティクルの数のみで管理するだけでは現実に即したも
のとならない。Therefore, simply managing the number of particles to evaluate a clean room as in the past is not realistic.
そこで本発明の目的は上記従来の問題点を解決し、クリ
ーンルーム内の雰囲気を総合的に評価する方法を提供す
るものである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and provide a method for comprehensively evaluating the atmosphere in a clean room.
上記目的は、本発明によれば、クリーンルーム内の空気
中に浮遊するパーティクル測定の結果およびクリーンル
ーム内雰囲気成分測定結果に基いて該ルーム内の清浄度
を評価することを特徴とするクリーンルームの評価方法
により達成される。According to the present invention, the above object is a method for evaluating a clean room, which comprises evaluating the cleanliness within the clean room based on the results of measuring particles floating in the air within the clean room and the results of measuring the atmospheric components within the clean room. This is achieved by
本発明ではクリーンルーム内のパーティクルの測定のみ
によりクリーンルームの清浄度を評価するのでなく、半
導体製造工程および半導体製造装置の寿命等に直接影響
を及ぼすクリーンルーム内の各種ガス、イオン分子、金
属分子等の測定結果を考慮することにより、総合的に、
より適切にクリーンルームの評価をすることが可能とな
る。In the present invention, the cleanliness of a clean room is evaluated not only by measuring particles in the clean room, but also by measuring various gases, ionic molecules, metal molecules, etc. in the clean room that directly affect the semiconductor manufacturing process and the life span of semiconductor manufacturing equipment. By considering the results, comprehensively,
It becomes possible to evaluate the clean room more appropriately.
以下図により本発明の詳細な説明する。 The present invention will be explained in detail below with reference to the drawings.
図は本発明の実施例構成図を示す。The figure shows a configuration diagram of an embodiment of the present invention.
空気中の浮遊塵芥の粒子（パーティクル）については従
来と同様にパーティクルカウンタ１により測定する。パ
ーティクルカウンタ１はレーザ光照射装置１−１からの
光を空気中に通し、パーティクルにより生じる光の散乱
光を受光判定装ｗ１−２で受はパーティクルの数、大き
さ等を測定する。Particles of floating dust in the air are measured by a particle counter 1 as in the conventional case. The particle counter 1 passes the light from the laser beam irradiation device 1-1 into the air, and uses the light reception determining device w1-2 to measure the number of particles, size, etc. of the scattered light generated by the particles.
一方りリーンルーム内雰囲気成分の測定は空気を一旦フ
ィルタ２を通してパーティクルの完全除去を行なってか
ら、純水ＩＯが入っている純水バブリング槽３に送る。On the other hand, when measuring the atmospheric components in a lean room, air is once passed through a filter 2 to completely remove particles, and then sent to a pure water bubbling tank 3 containing pure water IO.
バブリングにより空気中の化学的汚染物質を純水中に吸
着、溶解せしめる。By bubbling, chemical pollutants in the air are adsorbed and dissolved in pure water.
純水を使用する理由は純水は他の物質にきわめて汚染さ
れやすいことおよびクリーンルーム内で調達が容易なこ
とである。使用する純水の比抵抗は１８ＭΩ／ ｃ ｍ
位のものを使用する。The reason for using pure water is that pure water is highly susceptible to contamination with other substances and is easy to procure in a clean room. The specific resistance of the pure water used is 18MΩ/cm
Use the one with the highest rank.
純水中に空気を送り込み、バブリングを行なうため真空
ポンプ８を使用し空気中の水分を水分除去装置９で除去
してから排気する。純粋１０中に吸収・溶解したガス、
イオン分子、金属分子等は純粋中に挿入された電極６お
よび７からそれぞれＰＨ計４および導電率計５に導かれ
、ＰＨ計４により溶液のＰＨ値を、導電率計５により導
電率を測定する。Air is sent into pure water, a vacuum pump 8 is used to perform bubbling, moisture in the air is removed by a moisture removal device 9, and then the water is evacuated. Gases absorbed and dissolved in pure 10,
Ionic molecules, metal molecules, etc. are guided from electrodes 6 and 7 inserted into the pure medium to a PH meter 4 and a conductivity meter 5, respectively, and the PH meter 4 measures the pH value of the solution, and the conductivity meter 5 measures the conductivity. do.
この結果純水に溶けた化学的物質の割合が測定でき、間
接的にクリーンルーム雰囲気中の化学的な物質の測定が
可能となる。As a result, the proportion of chemical substances dissolved in pure water can be measured, making it possible to indirectly measure chemical substances in the clean room atmosphere.
パーティクルカウンタ１の測定結果と、ＰＨ計４および
導電率計５の測定結果は判定装置１１に入力されパーテ
ィクルおよび化学的物質によるクリーンルーム内雰囲気
の汚染の度合いを総合的に判定する。The measurement results of the particle counter 1 and the measurement results of the PH meter 4 and the conductivity meter 5 are input to a determination device 11, which comprehensively determines the degree of contamination of the atmosphere in the clean room due to particles and chemical substances.
従って例えばパーティクルの数が従来の基準では問題な
い値であっても、クリーンルーム内の化学的物質の測定
結果に問題ある場合はクリーンルームの総合評価は良く
ないとして警告を発する場合もある。Therefore, for example, even if the number of particles is a value that is acceptable according to conventional standards, if there are problems with the measurement results of chemical substances in the clean room, a warning may be issued because the overall evaluation of the clean room is not good.
本発明はクリーンルームの評価として、従来のようにパ
ーティクルカウンタの測定結果によってのみ行なうので
なく、半導体装置製造工程や製造装置の寿命に影響をお
よぼすクリーンルーム内雰囲気の化学的物質の測定結果
も加味して総合的に評価を行なっている。The present invention evaluates clean rooms not only based on particle counter measurement results as in the past, but also takes into account the measurement results of chemical substances in the clean room atmosphere that affect the semiconductor device manufacturing process and the life of manufacturing equipment. We are conducting a comprehensive evaluation.
従ってより実態に即したクリーンルームの評価方法を提
供することができる利点がある。Therefore, there is an advantage that a clean room evaluation method that is more in line with the actual situation can be provided.
図は本発明の実施例であるクリーンルーム評価装置ブロ
ック図を示す。
図において
１はパーティクルカンウタ、２はフィルタ、３は純水バ
ブリング装置、４はＰＨ計、５は導電率計６，７は電極
、８は真空ポンプ、９は水分除去装置を示す。The figure shows a block diagram of a clean room evaluation device that is an embodiment of the present invention. In the figure, 1 is a particle counter, 2 is a filter, 3 is a pure water bubbling device, 4 is a PH meter, 5 is a conductivity meter 6, 7 is an electrode, 8 is a vacuum pump, and 9 is a water removal device.
Claims (2)
ル測定の結果およびクリーンルーム内雰囲気成分測定結
果に基いて、該ルーム内の清浄度を評価することを特徴
とするクリーンルームの評価方法。(1) A clean room evaluation method characterized by evaluating the cleanliness inside the clean room based on the results of measuring particles floating in the air inside the clean room and the results of measuring the atmospheric components in the clean room.
しめ、その溶液を分析することにより雰囲気成分を測定
することを特徴とする請求項１項記載のクリーンルーム
の評価方法。(2) The clean room evaluation method according to claim 1, characterized in that the atmospheric components are measured by sucking and dissolving the air in the clean room into pure water and analyzing the solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2929488A JPH01203943A (en) | 1988-02-10 | 1988-02-10 | Evaluating method for clean room |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2929488A JPH01203943A (en) | 1988-02-10 | 1988-02-10 | Evaluating method for clean room |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01203943A true JPH01203943A (en) | 1989-08-16 |
Family
ID=12272223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2929488A Pending JPH01203943A (en) | 1988-02-10 | 1988-02-10 | Evaluating method for clean room |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01203943A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09145616A (en) * | 1995-11-29 | 1997-06-06 | Matsushita Electric Ind Co Ltd | Method and device for air impurity monitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6044742A (en) * | 1983-08-19 | 1985-03-09 | Toshiba Corp | Clean room |
-
1988
- 1988-02-10 JP JP2929488A patent/JPH01203943A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6044742A (en) * | 1983-08-19 | 1985-03-09 | Toshiba Corp | Clean room |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09145616A (en) * | 1995-11-29 | 1997-06-06 | Matsushita Electric Ind Co Ltd | Method and device for air impurity monitor |
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