JPH01200645A - Element isolation of molecular device - Google Patents
Element isolation of molecular deviceInfo
- Publication number
- JPH01200645A JPH01200645A JP63025243A JP2524388A JPH01200645A JP H01200645 A JPH01200645 A JP H01200645A JP 63025243 A JP63025243 A JP 63025243A JP 2524388 A JP2524388 A JP 2524388A JP H01200645 A JPH01200645 A JP H01200645A
- Authority
- JP
- Japan
- Prior art keywords
- film
- element isolation
- polymer
- insulating film
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 title claims abstract description 16
- 229920000642 polymer Polymers 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims abstract description 4
- 229920000015 polydiacetylene Polymers 0.000 abstract description 4
- 229920006254 polymer film Polymers 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
Abstract
Description
【発明の詳細な説明】
Ｃ産業上の利用分野〕
本発明は高分子素子を用いた集積回路装置の素子分離法
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a device isolation method for integrated circuit devices using polymer devices.
従来、高分子素子は単体素子の提案はあったが集積回路
装置の提案はなく、その為に、高分子素子の素子分離に
関する具体的な提案はなかった。Conventionally, there have been proposals for single elements for polymer elements, but no proposals for integrated circuit devices, and for this reason, there have been no concrete proposals regarding element separation of polymer elements.
しかし、上記従来技術によると、高分子素子による集積
回路が構成し難いと云う問題点があった。However, the above-mentioned conventional technology has a problem in that it is difficult to construct an integrated circuit using polymer elements.
本発明は、かかる従来技術の問題点をなくし、高分子素
子による集積回路の構成を可能とする素子分離法を提供
する事を目的とする。It is an object of the present invention to provide an element isolation method that eliminates the problems of the prior art and makes it possible to construct an integrated circuit using polymer elements.
上記問題点を解決するために、本発明は、高分子素子に
よる集積回路装置の素子分離に高分子絶縁膜を用いる手
段をとる事を基本とする。In order to solve the above problems, the present invention is based on the use of a polymer insulating film for element isolation of an integrated circuit device using polymer elements.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す分子素子の素子分ｌｆ
ｆ１ｉ造である。すなわち、絶縁基板１の表面には、Ｐ
型及びｒＩ型のポリジアセチレン膜２及び５ｉｓＮ＋等
から成るゲート絶縁膜３、導電膜から成る′ゲート電極
４が形成され、電界効果トランジスタが形成され、該ト
ランジスタの隣接素子との分離のために、ポリイミド等
の高分子膜かあるいはＳｉ３Ｎ４膜等と高分子膜の２層
構造による素子分雛絶縁膜５か形成され、該素子分離絶
縁膜５上に引出し電極６がコンタクト穴を介して形成さ
れ、隣接素子との接続が行なわれる。FIG. 1 shows an element component lf of a molecular device showing an embodiment of the present invention.
It is made by f1i. That is, on the surface of the insulating substrate 1, P
A gate insulating film 3 made of type and rI type polydiacetylene films 2 and 5isN+, and a gate electrode 4 made of a conductive film are formed to form a field effect transistor, and in order to separate the transistor from adjacent elements, An element isolation insulating film 5 having a two-layer structure of a polymer film such as polyimide or a Si3N4 film and a polymer film is formed, and an extraction electrode 6 is formed on the element isolation insulating film 5 through a contact hole. Connections with adjacent elements are made.
尚、絶縁基板１は、ポリジアセチレン２等の素子構成高
分子基板であっても良く、更に、三次元集積回路の場き
には素子分離絶縁膜５は平面方向の素子分離のみならず
、立木方向の素子分離に用いられても良い事は云うまで
もない。The insulating substrate 1 may be an element-constituting polymer substrate such as polydiacetylene 2. Furthermore, in the case of a three-dimensional integrated circuit, the element isolation insulating film 5 is used not only for element isolation in the planar direction but also for Needless to say, it may also be used for directional element separation.
本発明により高分子素子による集積回路装置の形成が可
能となる効果がある。更に、高分子材による素子分離は
、高分子材の低誘電率（ε舛３）から配線容量の低減に
よる高速化を計ることができる効果もある。The present invention has the effect of making it possible to form an integrated circuit device using polymer elements. Furthermore, element isolation using a polymer material has the effect of increasing speed by reducing wiring capacitance due to the low dielectric constant (ε 3) of the polymer material.
第１図は本発明の一実施例を示す高分子素子の素子分離
構造図である。
１・・・絶縁基板
２・・・ポリジアセチレン
３・・・ゲート絶縁膜
４・ ・ ・ゲート電極
５・・・素子分離絶縁膜
６・・・引出し電極
以 上
出願人 セイコーエプソン株式会社FIG. 1 is a diagram of an element isolation structure of a polymer element showing an embodiment of the present invention. 1... Insulating substrate 2... Polydiacetylene 3... Gate insulating film 4... Gate electrode 5... Element isolation insulating film 6... Leading electrode and above Applicant Seiko Epson Corporation
Claims (1)
置の素子分離にはポリイミド膜等の高分子絶縁膜を用い
る事を特徴とする分子装置の素子分離法。A device isolation method for molecular devices characterized in that a polymer insulating film such as a polyimide film is used for device isolation of electronic circuit devices including molecular devices formed on an insulating substrate or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63025243A JPH01200645A (en) | 1988-02-05 | 1988-02-05 | Element isolation of molecular device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63025243A JPH01200645A (en) | 1988-02-05 | 1988-02-05 | Element isolation of molecular device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01200645A true JPH01200645A (en) | 1989-08-11 |
Family
ID=12160543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63025243A Pending JPH01200645A (en) | 1988-02-05 | 1988-02-05 | Element isolation of molecular device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01200645A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010009074A (en) * | 2002-03-14 | 2010-01-14 | Semiconductor Energy Lab Co Ltd | Electrophoretic display device and method of fabricating electrophoretic display device |
-
1988
- 1988-02-05 JP JP63025243A patent/JPH01200645A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010009074A (en) * | 2002-03-14 | 2010-01-14 | Semiconductor Energy Lab Co Ltd | Electrophoretic display device and method of fabricating electrophoretic display device |
| US8599469B2 (en) | 2002-03-14 | 2013-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
| US9122119B2 (en) | 2002-03-14 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
| US9513528B2 (en) | 2002-03-14 | 2016-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
| US10088732B2 (en) | 2002-03-14 | 2018-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
| US10663834B2 (en) | 2002-03-14 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
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