JPH01200633A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPH01200633A JPH01200633A JP63024969A JP2496988A JPH01200633A JP H01200633 A JPH01200633 A JP H01200633A JP 63024969 A JP63024969 A JP 63024969A JP 2496988 A JP2496988 A JP 2496988A JP H01200633 A JPH01200633 A JP H01200633A
- Authority
- JP
- Japan
- Prior art keywords
- magazine case
- semiconductor substrate
- semiconductor substrates
- bottom plate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造装置、特に半導体基板を一定の薬液
を入れたエツチング槽に浸漬し、半導体基板上のアルミ
ニウム薄膜をエツチングする半導体製造装置に関するも
のである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to a semiconductor manufacturing equipment that etches an aluminum thin film on a semiconductor substrate by immersing the semiconductor substrate in an etching bath containing a certain chemical solution. It is something.
マガジンケース5には第6図に示すような7字溝6が一
定ピッチで設けられており、第4図、第5図に示すよう
に該7字溝6に半導体基板4の端縁を嵌合させ、複数の
半導体基板4,4・・・をマガジンケース5内に並列に
立て掛けていた。従来、マガジンケース5を載1斤する
多孔底板2はエツチング槽1内に水平に設置されており
、マガジンケース5を多孔底板2上に載置し、該マガジ
ンケース5内の半導体基板4,4・・・を槽1内の薬液
に浸漬し、エツチング処理を行っていた。The magazine case 5 is provided with 7-shaped grooves 6 at a constant pitch as shown in FIG. 6, and the edge of the semiconductor substrate 4 is fitted into the 7-shaped grooves 6 as shown in FIGS. A plurality of semiconductor substrates 4, 4, . . . were placed in parallel in a magazine case 5. Conventionally, the porous bottom plate 2 on which the magazine case 5 is placed is installed horizontally in the etching tank 1, and the magazine case 5 is placed on the porous bottom plate 2, and the semiconductor substrates 4, 4 inside the magazine case 5 are placed horizontally. ... was immersed in a chemical solution in tank 1 and subjected to etching treatment.
ところで、マガジンケース5に半導体基板4を立て掛け
る溝6はV字形であるため、マガジンケース5を水平に
載置した場合、第4図に示すように前方又は後方に傾斜
し、その姿勢が一定せず、第6図に示すように半導体基
板4の表面4aすなわち、アルミニウム薄膜を形成した
面が7字溝6の溝面に接触したり、基板4の傾斜姿勢に
よっては基板4の表面4aと溝6との間に隙間が生じて
エツチング中に発生する気泡7が入り込み、これがエツ
チングを阻害し、製品に悪影響を及ぼしていた。By the way, since the groove 6 for leaning the semiconductor substrate 4 on the magazine case 5 is V-shaped, when the magazine case 5 is placed horizontally, it will tilt forward or backward as shown in FIG. 4, and its posture will not be constant. First, as shown in FIG. 6, the surface 4a of the semiconductor substrate 4, that is, the surface on which the aluminum thin film is formed, may come into contact with the groove surface of the figure-7 groove 6, or depending on the tilted posture of the substrate 4, the surface 4a of the substrate 4 and the groove may come into contact with each other. A gap is created between the etching material 6 and the air bubbles 7 generated during etching, which impede etching and adversely affect the product.
本発明の目的は前記課題を解決した半導体製造装置を提
供することにある。An object of the present invention is to provide a semiconductor manufacturing apparatus that solves the above problems.
上述した従来のウェットエツチング装置に対し、本発明
は半導体基板の裏面側を溝面に接触させて立て掛け、そ
の表面すなわちアルミニウム薄膜を形成した面を薬液に
確実に浸漬してエツチング処理を行うという相違点を有
する。In contrast to the conventional wet etching apparatus described above, the present invention is different in that the back side of the semiconductor substrate is placed against the groove surface and the surface, that is, the surface on which the aluminum thin film is formed, is reliably immersed in the chemical solution to perform the etching process. Has a point.
上記目的を達成するため、本発明の半導体製造装置にお
いては、マガジンケースを載置する多孔底板を前記槽内
に傾斜姿勢に設置し、該多孔底板上しこ、半導体基板を
マガジンケースの底部から一定高さ位置に持ち上げて支
えるウェハー受け台を装備したものである。In order to achieve the above object, in the semiconductor manufacturing apparatus of the present invention, a porous bottom plate on which a magazine case is placed is installed in the tank in an inclined position, and the semiconductor substrate is moved from the bottom of the magazine case to the top of the porous bottom plate. It is equipped with a wafer holder that lifts and supports the wafer at a certain height.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を示す断面図、第2図は第1
図のA−A’線断面図、第3図は第2図の■部拡犬断面
図である。FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG.
FIG. 3 is an enlarged cross-sectional view of part 2 in FIG. 2.
第2図、第3図に示すように、マガジンケース5には半
導体基板4を立て掛けるV字溝6が設けられている。As shown in FIGS. 2 and 3, the magazine case 5 is provided with a V-shaped groove 6 on which the semiconductor substrate 4 is placed.
本発明はマガジンケース5を載置する多孔底板2をエツ
チング槽1内に傾斜させて設置し、該多孔底板2上に、
半導体基板4をマガジンケース5の底部から一定高さ位
置に持ち上げて支える台形状ウェハー受け台3を装備し
たものである。In the present invention, a porous bottom plate 2 on which a magazine case 5 is placed is installed in an inclined manner in an etching bath 1, and on the porous bottom plate 2,
It is equipped with a trapezoidal wafer holder 3 that lifts and supports the semiconductor substrate 4 at a certain height from the bottom of the magazine case 5.
実施例において、複数の半導体基板4,4・・・をマガ
ジンケース5のV字溝6に立て掛けて収容し、該マガジ
ンケース5を槽1内の傾斜した多孔底板2上に設置する
。本発明によれば、多孔底板2が傾斜されており、しか
も該多孔底板2上にウェハー受け台3が設置されている
。そのため、半導体基板4のオリエンテーションフラッ
ト(OF)4aを下部にしてマガジンケース5内に収容
しこれを多孔底板2上に載置すると、半導体基板4の0
F4aがウェハー受け台3に当接しV字溝6内にて上方
に持ち上げられ、かつ傾斜した多孔底板2にて後傾姿勢
に傾斜させられ、複数の半導体基板4,4・・・が平行
な一定姿勢に配列される。ここで、後傾姿勢の半導体基
板4の表面4aがアルミニウム薄膜を形成した而になる
ようにマガジンケース5のV字溝6内に立て掛けるよう
にすれば、半導体基板4の裏面4bがV字溝6に接M
した状態となり、第3図に示すように半導体基板4の表
面4aはV字溝6の溝面から離れるため、半導体基板4
の表面4aは槽1内の薬液に接触する。In the embodiment, a plurality of semiconductor substrates 4, 4, . According to the present invention, the porous bottom plate 2 is inclined, and the wafer holder 3 is installed on the porous bottom plate 2. Therefore, when the semiconductor substrate 4 is housed in the magazine case 5 with the orientation flat (OF) 4a at the bottom and placed on the porous bottom plate 2, the orientation flat (OF) 4a of the semiconductor substrate 4 is placed at the bottom.
F4a contacts the wafer holder 3 and is lifted upward in the V-shaped groove 6, and is tilted backward by the inclined porous bottom plate 2, so that the plurality of semiconductor substrates 4, 4... are parallel to each other. Arranged in a fixed position. Here, if the semiconductor substrate 4 is placed in the V-shaped groove 6 of the magazine case 5 so that the front surface 4a of the semiconductor substrate 4 in the backward-tilting position forms the aluminum thin film, the back surface 4b of the semiconductor substrate 4 can be placed in the V-shaped groove. M tangent to 6
As shown in FIG. 3, the surface 4a of the semiconductor substrate 4 is separated from the groove surface of the V-shaped groove 6.
The surface 4a of is in contact with the chemical solution in the tank 1.
以上説明したように本発明はマガジンケースを載置する
多孔底板を傾斜させ、かつマガジンケース内の半導体基
板を持ち上げるウェハー受け台を設けることにより、半
導体基板を並列な傾斜姿勢に配列することができ、マガ
ジンケースに収容する際、半導体基板の向きを整えるこ
とにより、半導体基板の表面とマガジンケースの溝が接
したり、エツチング中に発生する気泡が両者の間に入り
込んだりすることを防止でき、エツチングを阻害するこ
とがなく、エツチング残りの発生をなくすことができる
効果を有するものである。As explained above, the present invention makes it possible to arrange semiconductor substrates in a parallel inclined posture by tilting the porous bottom plate on which the magazine case is placed and providing a wafer holder that lifts up the semiconductor substrates in the magazine case. By adjusting the orientation of the semiconductor substrate when storing it in the magazine case, it is possible to prevent the surface of the semiconductor substrate and the groove of the magazine case from coming into contact with each other, and to prevent air bubbles generated during etching from entering between the two. It has the effect of eliminating the occurrence of etching residue without inhibiting etching.
第1図は本発明のエツチング装置を示す断面図、第2図
は第1図のA−A’線断面図、第3図は第2図の111
部の拡大断面図、第4図は従来のエツチング装置を示す
断面図、第5図は第4図の卜B′線断面図、第6図は第
5図の■部の拡大断面図である。
1・・エツチング槽 2・・・多孔底板3・・・ウ
ェハー受け台 4・・・半導体基板5・・・マガジン
ケース 6・・・マガジンケースの溝特許出願人
九州日本電気株式会社
・−1
代 理 人 弁理士 菅 野 中 :・ユ
・ ′
\
A′
第1図
第2図
第3図
β′
第4図
第5図
第6図FIG. 1 is a sectional view showing the etching apparatus of the present invention, FIG. 2 is a sectional view taken along the line AA' in FIG. 1, and FIG.
4 is a sectional view showing a conventional etching device, FIG. 5 is a sectional view taken along the line B' in FIG. 4, and FIG. 6 is an enlarged sectional view of the section ■ in FIG. . 1...Etching bath 2...Porous bottom plate 3...Wafer holder 4...Semiconductor substrate 5...Magazine case 6...Groove of magazine case Patent applicant
Kyushu NEC Co., Ltd.-1 Representative Patent Attorney Naka Kanno: Yu
・' \ A' Figure 1 Figure 2 Figure 3 β' Figure 4 Figure 5 Figure 6
Claims (1)
けられた半導体基板を浸漬し、該半導体基板上の薄膜を
除去するウェットエッチング装置におぃて、マガジンケ
ースを載置する多孔底板を前記槽内に傾斜姿勢に設置し
、該多孔底板上に、半導体基板をマガジンケースの底部
から一定高さ位置に持ち上げて支えるウェハー受け台を
装備したことを特徴とする半導体製造装置。1. In a wet etching device that removes a thin film on a semiconductor substrate by immersing a semiconductor substrate leaning against a magazine case in a chemical solution in an etching tank, the porous bottom plate on which the magazine case is placed is placed inside the tank. 1. A semiconductor manufacturing apparatus, which is installed in an inclined position in a magazine case, and is equipped with a wafer holder on the porous bottom plate for lifting and supporting a semiconductor substrate at a certain height from the bottom of a magazine case.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63024969A JPH01200633A (en) | 1988-02-05 | 1988-02-05 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63024969A JPH01200633A (en) | 1988-02-05 | 1988-02-05 | Semiconductor manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01200633A true JPH01200633A (en) | 1989-08-11 |
Family
ID=12152799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63024969A Pending JPH01200633A (en) | 1988-02-05 | 1988-02-05 | Semiconductor manufacturing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01200633A (en) |
-
1988
- 1988-02-05 JP JP63024969A patent/JPH01200633A/en active Pending
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