JPH01197386A - Hot wall epitaxial growth device - Google Patents
Hot wall epitaxial growth deviceInfo
- Publication number
- JPH01197386A JPH01197386A JP2263388A JP2263388A JPH01197386A JP H01197386 A JPH01197386 A JP H01197386A JP 2263388 A JP2263388 A JP 2263388A JP 2263388 A JP2263388 A JP 2263388A JP H01197386 A JPH01197386 A JP H01197386A
- Authority
- JP
- Japan
- Prior art keywords
- source
- crucible
- epitaxial growth
- sub
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 14
- 230000002265 prevention Effects 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 229910002665 PbTe Inorganic materials 0.000 description 6
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ホットウォールエピタキシャル成長装置に関し、エピタ
キシャル成長用坩堝内で高温で加熱する主ソースの蒸発
成分が、低温で加熱する副ソースを収容する突出管の内
部に逆流しないようにするのを目的とし、
真空室と、該真空室内に設置され、エピタキシャル結晶
層形成用の主ソースを底部に収容する坩堝と、副ソース
を収容し一端が開放で前記坩堝底部より上方に突出し、
他端が底部より下方に突出した有底の突出管を備え、エ
ピタキシャル成長用基板を設置する基板設置台を含み、
前記坩堝内に収容した主ソース、および突出管内に収容
した副ソースの蒸発成分を基板に被着させる装置であっ
て、前記副ソースを収容する突出管の上部開放端部から
主ソースの蒸発成分が前記突出管内に逆流しないような
逆流防止手段を付設して構成する。[Detailed Description of the Invention] [Summary] Regarding a hot wall epitaxial growth apparatus, there is a need to prevent evaporated components of a main source heated at a high temperature in an epitaxial growth crucible from flowing back into a protruding tube housing a sub-source heated at a low temperature. A vacuum chamber, a crucible installed in the vacuum chamber and accommodating a main source for forming an epitaxial crystal layer at the bottom, and a crucible accommodating a sub-source with one end open and protruding upward from the bottom of the crucible. ,
a bottomed protrusion tube whose other end protrudes below the bottom, and includes a substrate installation stand on which a substrate for epitaxial growth is placed;
An apparatus for depositing evaporated components of a main source housed in the crucible and a sub-source housed in a protruding tube onto a substrate, the evaporated components of the main source being deposited on a substrate from an upper open end of the protruding tube accommodating the sub-source. A backflow prevention means is provided to prevent backflow of water into the projecting tube.
本発明はホットウォールエピタキシャル成長装置に係り
、特に低温で加熱する副ソースを収容する突出管内に坩
堝内に設置し、高温で加熱する主ソースの蒸発成分が逆
流しないようにしたホットウォールエピタキシャル成長
装置に関する。The present invention relates to a hot wall epitaxial growth apparatus, and more particularly to a hot wall epitaxial growth apparatus that is installed in a crucible within a protruding tube that accommodates a sub-source that is heated at a low temperature to prevent the evaporated components of the main source that is heated at a high temperature from flowing back.
ホットウォールエピタキシャル成長装置は、鉛テルル（
ＰｂＴｅ）や、鉛・錫・テルル（ＰｂＳｎＴｅ）等の■
−■族の化合物半導体結晶や、ガリウム砒素（ＧａＡｓ
）に代表される■−■族化合物半導体結晶や、カドミウ
ムテルル（ＣｄＴｅ）等のＩＩ−Ｖｌ族化合物半導体結
晶を用いた光デバイスの形成、および集積回路の結晶製
造技術として確立しつつある。The hot wall epitaxial growth equipment uses lead tellurium (
■ PbTe), lead, tin, tellurium (PbSnTe), etc.
−■ group compound semiconductor crystals, gallium arsenide (GaAs)
) and II-Vl group compound semiconductor crystals such as cadmium telluride (CdTe) are being established as a crystal manufacturing technology for optical devices and integrated circuits.
このホットウォールエピタキシャル成長装置は高真空に
排気された室内に、形成すべき化合物半導体結晶のソー
スを収容し、かつ側壁が加熱されたソース坩堝を複数個
配設し、該坩堝の開口部にエピタキシャル層を形成する
基板を設置し、その坩堝内の蒸発した成分を基板にエピ
タキシャル層として付着させるようにしている。そのた
め、閉管型気相成長方法と類似しており、ソースの蒸発
した成分がホットウォールの側壁に衝突しながら基板上
に到達するため、熱平衡に近い状態で成長でき、形成さ
れる結晶層内に偏析を発生しない均一な組成、およびキ
ャリア濃度の薄層状態の結晶が得られる。This hot wall epitaxial growth apparatus accommodates a source for the compound semiconductor crystal to be formed in a chamber evacuated to high vacuum, and arranges a plurality of source crucibles with heated side walls, and forms an epitaxial layer in the opening of the crucible. A substrate for forming the crucible is placed, and the evaporated components in the crucible are deposited on the substrate as an epitaxial layer. Therefore, it is similar to the closed-tube vapor phase growth method, and the evaporated components of the source reach the substrate while colliding with the side walls of the hot wall, allowing growth to occur in a state close to thermal equilibrium, and the resulting crystal layer is A crystal with a uniform composition without segregation and a thin layer of carrier concentration can be obtained.
第６図は従来のホットウォールエピタキシャル成長装置
の概略図で、ＰｂＴｅ （鉛テルル）の基板上にＰｂＴ
ｅのエピタキシャル層を形成する装置である。Figure 6 is a schematic diagram of a conventional hot-wall epitaxial growth apparatus.
This is an apparatus for forming an epitaxial layer of e.
図示するように１０− ’Ｐａ （パスカル）程度の高
真空に排気された真空室１内には、エピタキシャル結晶
層形成用のＴｅより成る副ソース２を収容し、一端３八
が開放で坩堝４の底部４八より上部に突出し、他端が有
底で底部４Ａより下部に突出した有底の突出管３を備え
、底部４八に主ソース５を収容する坩堝４が設置されて
いる。そしてこの坩堝４の側壁と、突出管３の側壁には
主ソース５、および副ソース２を、それぞれ別個に加熱
するためのヒータ６．７が設けられている。As shown in the figure, a vacuum chamber 1 evacuated to a high vacuum of about 10-'Pa (Pascals) contains a sub-source 2 made of Te for forming an epitaxial crystal layer, and one end 38 is open and a crucible 4 is placed inside the vacuum chamber 1. The crucible 4 for storing the main source 5 is installed in the bottom 48. The crucible 4 is provided with a protruding tube 3 having a bottom and the other end protruding downward from the bottom 4A. Heaters 6.7 are provided on the side wall of the crucible 4 and the side wall of the protruding tube 3 to heat the main source 5 and the sub-source 2 separately.
また該坩堝４上には、エピタキシャル成長用基板８を設
置し、内部にヒータ９を備えた基板設置台１０が設置さ
れている。Further, on the crucible 4, a substrate 8 for epitaxial growth is placed, and a substrate installation table 10 having a heater 9 inside is installed.
このような装置を用いてＰｂＴｅの基板８上にＰｂＴｅ
のエピタキシャル層を形成する場合について述べると、
坩堝４上に基板８を設置し、主ソース５を５００°Ｃの
高温で加熱し、副ソース２を２５０°Ｃの低温度で加熱
してエピタキシャル成長を行っている。Using such a device, PbTe is deposited on the PbTe substrate 8.
Regarding the case of forming an epitaxial layer,
A substrate 8 is placed on a crucible 4, and epitaxial growth is performed by heating the main source 5 at a high temperature of 500°C and heating the sub-source 2 at a low temperature of 250°C.
このようにＰｂＴｅのエピタキシャル層を形成する際、
主ソースとしてＰｂＴｅのソースを用い、副ソースとし
てＴｅを用いる理由は、Ｔｅが成長したＰｂＴｅのエピ
タキシャル層より蒸発して抜は出し易く、そのためＴｅ
を副ソースとして同一坩堝内に別個に設け、この副ソー
スの蒸発せる成分を主ソースの蒸発せる成分に補充して
いる。When forming the PbTe epitaxial layer in this way,
The reason why a PbTe source is used as the main source and Te is used as the sub-source is that Te evaporates from the grown PbTe epitaxial layer and is easier to extract.
is separately provided in the same crucible as a sub-source, and the evaporable components of this sub-source are supplemented to the evaporable components of the main source.
然し、従来のホットウォールエピタキシャル成長装置で
は、高温で加熱される主ソース５の蒸発成分が低温で加
熱される副ソース２を収容している突出管３内に、上部
開放端部３Ａより流入されるおそれがあり、突出管の上
部開放端部に主ソースの成分が付着してその出口を塞い
だり、副ソース内に主ソースの成分が混入する恐れがあ
る、そのためヒータ６．７の温度調節を行って、主ソー
スおよび副ソースの蒸気圧を所定の値に制御しているが
、この温度調節のみでは上記した問題点を解決するには
不十分で、所望の組成のエピタキシャル層を得られない
問題が生じる。However, in the conventional hot wall epitaxial growth apparatus, the evaporated components of the main source 5 heated at a high temperature flow into the protruding tube 3 housing the sub source 2 heated at a low temperature from the upper open end 3A. There is a risk that components of the main source may adhere to the upper open end of the protruding tube and block the outlet, or components of the main source may mix into the sub-source. The vapor pressure of the main source and sub-source is controlled to a predetermined value, but this temperature control alone is not sufficient to solve the above problems, and it is not possible to obtain an epitaxial layer with the desired composition. A problem arises.
本発明は上記した問題点を除去し、主ソースの蒸発成分
が副ソースを収容する突出管に流入されないようにした
新規なホットウォールエピタキシャル成長装置の提供を
目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a novel hot wall epitaxial growth apparatus which eliminates the above-mentioned problems and prevents the evaporated components of the main source from flowing into the protruding tube housing the sub-source.
上記目的を達成するための本発明のホットウォールエピ
タキシャル成長装置は、第１図に示すように、エピタキ
シャル成長装置の坩堝２１で副ソース２２を収容せる。In order to achieve the above object, the hot wall epitaxial growth apparatus of the present invention, as shown in FIG. 1, accommodates a sub-source 22 in a crucible 21 of the epitaxial growth apparatus.
突出管２３の出口端ｇＷ２３ｐ、に、坩堝２１の底部に
収容した主ソース２４からの蒸発成分が導入されないよ
うな逆流防止手段２５を設けたことで構成する。A backflow prevention means 25 is provided at the outlet end gW23p of the protrusion tube 23 to prevent the evaporated components from the main source 24 housed in the bottom of the crucible 21 from being introduced.
本発明のホットウォールエピタキシャル成長装置は、突
出管の開放端部を絞った構造、突出管の開放端部に三角
錐状の逆流防止弁を設けた構造等で主ソースの蒸発成分
の逆流防止手段を施し、この手段によって副ソースが収
容されている突出管内部に主ソースの蒸発成分が逆流し
ないようにする。The hot wall epitaxial growth apparatus of the present invention has a structure in which the open end of the protrusion tube is narrowed, a structure in which a triangular pyramid-shaped check valve is provided at the open end of the protrusion tube, etc., to prevent the backflow of the evaporated components of the main source. By this means, the evaporated components of the main source are prevented from flowing back into the projecting tube in which the sub-source is accommodated.
以下、図面を用いながら本発明の実施例につき詳細に説
明する。Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は本発明のホットウォールエピタキシャル成長装
置の第１実施例の概略図である。FIG. 2 is a schematic diagram of a first embodiment of the hot wall epitaxial growth apparatus of the present invention.
図示するように、本発明の装置に於ける坩堝２１の突出
管２３の上部開放端部２３Ａは絞られており、そのため
この絞られた箇所２３Ａより坩堝２１の底部２１Ａに収
容した主ソース２４の蒸発成分が、上記副ソース２２を
収容している突出管２３内部に導入され難くなる。As shown in the figure, the upper open end 23A of the protruding tube 23 of the crucible 21 in the apparatus of the present invention is constricted, so that the main source 24 accommodated in the bottom 21A of the crucible 21 can be accessed from the constricted portion 23A. Evaporated components are less likely to be introduced into the protrusion tube 23 housing the sub-source 22.
そのため、副ソースの２２の表面が主ソース２４の蒸発
成分で汚染されるおそれが無くなる。Therefore, there is no possibility that the surface of the sub-source 22 will be contaminated by the evaporated components of the main source 24.
ところで第１実施例では突出管２３の上部開放端部２３
Ａは絞っているが、該端部２３への口径（断面積）は一
定である。このため副ソース２２の蒸気圧が充分高い場
合は、絞っである開放端部２３Ａより主ソース２４の蒸
発成分が突出管２３内へ逆流することは無いが、副ソー
スの蒸気圧が低い場合は、開放端部２３Ａが絞ってあっ
ても、その絞りが必ずしも充分と言えず、主ソース２４
の蒸発成分が突出管２３内へ逆流する恐れがある。By the way, in the first embodiment, the upper open end 23 of the protruding tube 23
Although A is narrowed, the aperture (cross-sectional area) to the end 23 is constant. Therefore, if the vapor pressure of the sub source 22 is sufficiently high, the evaporated components of the main source 24 will not flow back into the protruding tube 23 from the open end 23A, which is a restriction, but if the vapor pressure of the sub source is low, then , even if the open end 23A is narrowed, the narrowing is not necessarily sufficient, and the main source 24
evaporated components may flow back into the protrusion tube 23.
第３図は本発明の第２実施例の要部の説明図で上記第１
実施例の問題を解決したもので、図示するように突出管
２３の上部開放端部２３Ａに円錐状、三角錐状或いは球
状の石英ガラスより形成された逆流防止弁３１を設ける
。この逆流防止弁３１は副ソース２２の蒸気圧が低い場
合は、下方に下がり開放端部２３＾の口径（出口断面積
）を副ソース２２の蒸気圧に対応して塞いでゆく。その
ため、第１実施例と比較して副ソース２２の蒸気圧が高
い蒸気圧より低い蒸気圧まで高範囲にわたって対応でき
るようになる。そのため、第１実施例と比較して突出管
２３の上部開放端部２３Ａに、導入され金主ソース２４
の蒸発成分が付着するような事故がより少な（なり、よ
り高信頼度のホットウォールエピタキシャル成長装置が
得られる。FIG. 3 is an explanatory diagram of the main parts of the second embodiment of the present invention.
This solves the problem of the embodiment, and as shown in the figure, a check valve 31 made of conical, triangular pyramid, or spherical quartz glass is provided at the upper open end 23A of the protruding tube 23. When the vapor pressure of the auxiliary source 22 is low, the check valve 31 moves downward and closes the diameter (exit cross-sectional area) of the open end 23^ in accordance with the vapor pressure of the auxiliary source 22. Therefore, compared to the first embodiment, the vapor pressure of the sub source 22 can be handled over a wide range from a high vapor pressure to a low vapor pressure. Therefore, compared to the first embodiment, the gold main source 24 is introduced into the upper open end 23A of the protrusion tube 23.
Accidents such as adhesion of evaporated components are reduced, and a more reliable hot wall epitaxial growth apparatus is obtained.
第４図は本発明の第３実施例の説明図で、第５図は第４
図の要部の説明図で、第４図および第５図に示すように
突出管２３全体をテーパー形状に加工する。更にこのテ
ーパー状に加工した突出管２３の上部開放端部２３Ａの
管の内部に球状の石英部材を逆流防止弁４１とする。す
ると副ソース２２を収容する突出管２３の周囲に設けた
ヒータ２６の温度を調節することで、この温度に該当す
る蒸気圧で逆流防止弁４１を持ち上げることにより、副
ソース２２からの蒸発成分量が、主ソース２４からの蒸
発成分の影響を受けることが無く制御できる。FIG. 4 is an explanatory diagram of the third embodiment of the present invention, and FIG.
As shown in FIGS. 4 and 5, the entire protruding tube 23 is processed into a tapered shape. Further, a spherical quartz member is provided as a backflow prevention valve 41 inside the upper open end 23A of the tapered projecting tube 23. Then, by adjusting the temperature of the heater 26 provided around the protruding pipe 23 that accommodates the sub-source 22, the amount of evaporated components from the sub-source 22 is reduced by lifting the check valve 41 at the vapor pressure corresponding to this temperature. can be controlled without being affected by the evaporated components from the main source 24.
本実施例では第２実施例に於けるように逆流防止弁４１
が、副ソース２２の蒸気圧の変動によってテーパー状の
突出管２３に沈む位置が変動するため、副ソースの蒸気
圧が低圧より高圧の高範囲にわたって調節できる。In this embodiment, the check valve 41 is used as in the second embodiment.
However, since the position at which the sub-source 22 sinks into the tapered protruding tube 23 changes depending on the variation in the vapor pressure of the sub-source 22, the vapor pressure of the sub-source can be adjusted over a wide range from low pressure to high pressure.
そのため第１実施例に示すように主ソースの逆流した成
分が突出管の開放端部に凝縮して副ソースの蒸発量に影
響を及°ぼすことがなくなり、主ソースの蒸発成分が副
ソースの表面に付着する事故も防止できる高信頼度のホ
ットウォールエピタキシャル成長装置が得られる。Therefore, as shown in the first embodiment, the components of the main source that flowed back do not condense at the open end of the protruding tube and affect the evaporation amount of the sub-source, and the evaporated components of the main source do not condense on the open end of the protruding tube and affect the amount of evaporation of the sub-source. A highly reliable hot wall epitaxial growth apparatus can be obtained that can prevent the accident of adhesion to the surface of the hot wall epitaxial growth device.
以上述べたように本発明の装置によれば、主ソースの蒸
発成分が突出管の開放端部に付着して副ソースの蒸発量
に影響を与えることがなくなり、また主ソースの蒸発成
分が副ソース側に流入して副ソースの蒸発成分の組成変
動を生じることのない高信頼度のホットウォールエピタ
キシャル成長装置が容易に得られる効果がある。As described above, according to the apparatus of the present invention, the evaporated components of the main source do not adhere to the open end of the protruding tube and affect the evaporation amount of the sub-source, and This has the effect of easily providing a highly reliable hot wall epitaxial growth apparatus that does not flow into the source side and cause compositional fluctuations in the evaporated components of the sub-source.
第１図は本発明の詳細な説明図、
第２図は本発明の第１実施例の説明図、第３図は本発明
の第２実施例の説明図、第４図は本発明の第３実施例の
説明図、第５図は第４図の要部の説明図、
第６図は従来のホットウォールエピタキシャル成長装置
の説明図である。
図に於いて、
２１は坩堝、２１Ａは坩堝の底部、２２は副ソース、２
３は突出管、２３＾は突出管の上部開放端部、２４は主
ソース、２５は逆流防止手段、２６．２７はヒータ、３
１．４１は逆流防止弁を示す。
羊発明ｎ喀！丙数ＧＩ詔
第１図
斗発略ｌ！め才ｊ笑施ｆｉ＾ｔえ明口
第２図
手発萌め憾１）才２究絶例り疏明品
第３図
杢発明耐区里めオ３趙ダ卦収−口
第４図Fig. 1 is a detailed explanatory diagram of the present invention, Fig. 2 is an explanatory diagram of the first embodiment of the present invention, Fig. 3 is an explanatory diagram of the second embodiment of the invention, and Fig. 4 is an explanatory diagram of the second embodiment of the invention. FIG. 5 is an explanatory diagram of the main part of FIG. 4, and FIG. 6 is an explanatory diagram of a conventional hot wall epitaxial growth apparatus. In the figure, 21 is a crucible, 21A is the bottom of the crucible, 22 is a sub-source, 2
3 is a projecting pipe, 23^ is an upper open end of the projecting pipe, 24 is a main source, 25 is a backflow prevention means, 26.27 is a heater, 3
1.41 indicates a non-return valve. Inventing sheep! Heisei number GI edict 1st figure doo departure l! Figure 2 of the opening of the book 1) The ultimate example of the product Figure 3 Figure 3 of the invention
Claims (4)
キシャル結晶層形成用の主ソース（２４）を底部に収容
する坩堝（２１）と、副ソース（２２）を収容し一端が
開放で前記坩堝底部より上方に突出し、他端が底部より
下方に突出した有底の突出管（２３）を備え、エピタキ
シャル成長用基板（８）を設置する基板設置台（１０）
を含み、 前記坩堝（２１）内に収容した主ソース（２４）、およ
び突出管（２３）内に収容した副ソース（２２）の蒸発
成分を基板（８）に被着させる装置であって、前記副ソ
ース（２２）を収容する突出管（２３）の上部開放端部
（２３Ａ）から主ソース（２４）の蒸発成分が前記突出
管（２３）内に逆流しないような逆流防止手段（２５）
を付設したことを特徴とするホットウォールエピタキシ
ャル成長装置。(1) A vacuum chamber (1), a crucible (21) installed in the vacuum chamber that houses a main source (24) for forming an epitaxial crystal layer at the bottom, and a sub-source (22) with one end open. A substrate installation stand (10) on which an epitaxial growth substrate (8) is installed, which is equipped with a bottomed protrusion tube (23) that protrudes upward from the bottom of the crucible and whose other end protrudes downward from the bottom.
An apparatus for depositing evaporated components of the main source (24) housed in the crucible (21) and the sub-source (22) housed in the protruding tube (23) onto the substrate (8), Backflow prevention means (25) that prevents the evaporated components of the main source (24) from flowing back into the projecting tube (23) from the upper open end (23A) of the projecting tube (23) that accommodates the sub-source (22).
A hot wall epitaxial growth apparatus characterized by being equipped with.
部開放端部（２３Ａ）を絞って形成したことを特徴とす
る特許請求の範囲第１項記載のホットウォールエピタキ
シャル成長装置。(2) The hot wall epitaxial growth apparatus according to claim 1, wherein the backflow prevention means (25) is formed by squeezing the upper open end (23A) of the protruding tube (23).
状或いは球状の逆流防止弁（３１）を設置したことを特
徴とする特許請求の範囲第１項記載のホットウォールエ
ピタキシャル成長装置。(3) The hot wall epitaxial growth apparatus according to claim 1, characterized in that a triangular pyramidal, conical, or spherical check valve (31) is installed at the open end of the protruding tube (23). .
ーパー管の出口端部（２３Ａ）に球状の逆流防止弁（４
１）を設置したことを特徴とする特許請求の範囲第１項
記載のホットウォールエピタキシャル成長装置。(4) The projecting pipe (23) is formed into a tapered shape, and a spherical check valve (4) is provided at the outlet end (23A) of the tapered pipe.
1) A hot wall epitaxial growth apparatus according to claim 1, characterized in that: 1) is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2263388A JPH01197386A (en) | 1988-02-01 | 1988-02-01 | Hot wall epitaxial growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2263388A JPH01197386A (en) | 1988-02-01 | 1988-02-01 | Hot wall epitaxial growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01197386A true JPH01197386A (en) | 1989-08-09 |
Family
ID=12088235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2263388A Pending JPH01197386A (en) | 1988-02-01 | 1988-02-01 | Hot wall epitaxial growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01197386A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485151B1 (en) * | 2002-08-26 | 2005-04-22 | 주식회사 실트론 | A Grower For Single Crystalline Silicon |
-
1988
- 1988-02-01 JP JP2263388A patent/JPH01197386A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485151B1 (en) * | 2002-08-26 | 2005-04-22 | 주식회사 실트론 | A Grower For Single Crystalline Silicon |
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