JPH01197366A - Discharge working method for silicon nitride-base molded ceramic body - Google Patents
Discharge working method for silicon nitride-base molded ceramic bodyInfo
- Publication number
- JPH01197366A JPH01197366A JP63021386A JP2138688A JPH01197366A JP H01197366 A JPH01197366 A JP H01197366A JP 63021386 A JP63021386 A JP 63021386A JP 2138688 A JP2138688 A JP 2138688A JP H01197366 A JPH01197366 A JP H01197366A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- molded body
- weight
- powder
- discharge machining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 9
- 229910052710 silicon Inorganic materials 0.000 title abstract description 4
- 239000010703 silicon Substances 0.000 title abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 229920001940 conductive polymer Polymers 0.000 claims description 20
- 238000009760 electrical discharge machining Methods 0.000 claims description 15
- 229920000620 organic polymer Polymers 0.000 claims description 6
- 229920001795 coordination polymer Polymers 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 abstract description 17
- -1 polyphenylene Polymers 0.000 abstract description 12
- 238000000465 moulding Methods 0.000 abstract description 11
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 7
- 229920001197 polyacetylene Polymers 0.000 abstract description 7
- 229920000642 polymer Polymers 0.000 abstract description 7
- 238000005245 sintering Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 4
- 229920000265 Polyparaphenylene Polymers 0.000 abstract description 3
- 238000000227 grinding Methods 0.000 abstract description 3
- 229920000128 polypyrrole Polymers 0.000 abstract description 3
- 229920000123 polythiophene Polymers 0.000 abstract description 3
- 239000011812 mixed powder Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 8
- 239000004743 Polypropylene Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920001155 polypropylene Polymers 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- 238000011899 heat drying method Methods 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920006228 ethylene acrylate copolymer Polymers 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 238000000462 isostatic pressing Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002482 conductive additive Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003257 polycarbosilane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、窒化珪素系セラミックスの加工技術にか〜わ
り、より詳しくは窒化珪素に導電性高分子を添加するこ
とにより導電体化し、放電加工する方法に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a processing technology for silicon nitride ceramics, and more specifically, silicon nitride is made into a conductor by adding a conductive polymer to the silicon nitride, and the silicon nitride is made into a conductor by adding a conductive polymer. It is related to the method of processing.
［従来の技術］
窒化珪素系セラミックスは、導電体ではないため電気的
な加工が難しく、研削による加工についても目詰りを起
こし易いことが問題点とされている。[Prior Art] Silicon nitride ceramics are difficult to electrically process because they are not electrically conductive, and the problem is that they are easily clogged when processed by grinding.
そこで、窒化珪素系セラミックスに導電性の添加物Ｔｉ
Ｎ等を加え、電気的な加工を行なう試みがなされている
（特公昭ｅｔ −１１１９６９号公報、特公昭８１−２
８１０５９号公報）。Therefore, we added a conductive additive, Ti, to silicon nitride ceramics.
Attempts have been made to perform electrical processing by adding N, etc.
81059).
［発明が解決しようとする課題］
しかし、添加物として加えるＴｉＮ量が３０体積％を超
え、窒化珪素セラミックスのもつ性質を劣化させる。[Problems to be Solved by the Invention] However, the amount of TiN added as an additive exceeds 30% by volume, which deteriorates the properties of silicon nitride ceramics.
本発明は素地成形体の導電化を行なう放電加工を提供す
るものである。The present invention provides electrical discharge machining for making a green compact compact electrically conductive.
［課題を解決するための手段］
本発明は、窒化珪素系粉末に導電性の高分子を用い、造
粒かつ成形を行なうことによって、素地成形体を導電体
化し、放電加工を行なうことを特徴とする。[Means for Solving the Problems] The present invention is characterized in that a conductive polymer is used in a silicon nitride-based powder, and by granulating and molding the base molded body, it is made into a conductor, and electrical discharge machining is performed. shall be.
即ち、窒化珪素系粉末試料に、該粉末に対して３〜３０
重量％の導電性高分子ポリアセチレン、ポリフェニレン
、ポリピロール、並びにポリチオフェンから選ばれる少
なくとも１種の化合物と、必要によりこれに０．１〜２
０重二％重量機高分子または有機金属高分子を添加する
。That is, in a silicon nitride powder sample, 3 to 30
% by weight of at least one compound selected from the conductive polymer polyacetylene, polyphenylene, polypyrrole, and polythiophene, and if necessary, 0.1 to 2% of the conductive polymer.
Add 0.2% mechanical polymer or organometallic polymer.
有機高分子としてはポリエチレン、ポリプロピレン、ア
タクチックポリプロピレン、ＥｖＡ樹脂、ポリスチレン
、エチレン−アクリエート共重合体、アクリル樹脂、ワ
ックス、ポリアミドに種類分けされる化合物、有機金属
高分子としてはポリサイラゼン、ポリ男ルボシランがあ
る。Organic polymers include polyethylene, polypropylene, atactic polypropylene, EvA resin, polystyrene, ethylene-acrylate copolymer, acrylic resin, wax, and polyamide; organic metal polymers include polycyrazene and polyalubosilane. There is.
これらから選ばれる少なく゛とも１種を混合した粉末を
従来公知の成形法、例えば有機溶媒を用いてスラリーと
なし、このスラリーを粉末とした後、これを成形した成
形体を、または、スラリーを直接鋳込み成形を行なうこ
とによって得られた成形体について、比抵抗値ｌ０−３
Ω・口以下として、放電加工するものである。A powder mixture of at least one selected from these is made into a slurry using a conventionally known molding method, for example, using an organic solvent, and after this slurry is made into a powder, a molded article made by molding this or the slurry is made into a slurry. Regarding the molded body obtained by direct casting, the specific resistance value l0-3
Electrical discharge machining is performed as the resistance is less than Ω.
ここで、導電性高分子が３重量％未満の場合には、比抵
抗値がｌロー３Ω・（１）以下にならず、効果的に放電
加工ができない。また、３０重量％を超えれば、脱脂の
際に保形性が悪くなり、焼成の際に収縮率が高くなる問
題を生ずる。Here, if the content of the conductive polymer is less than 3% by weight, the specific resistance value will not be less than 1<0><3 Ω·(1), and electric discharge machining cannot be performed effectively. Moreover, if it exceeds 30% by weight, the problem of poor shape retention during degreasing and high shrinkage during firing will occur.
有機高分子を加える理由として、熱可塑性を利用した射
出成形技術や型との離型性、さらに粉体同志の流動性を
上げるための滑剤としてのはたらきをすることがあげら
れる。Reasons for adding organic polymers include injection molding technology that utilizes thermoplasticity, mold releasability, and acting as a lubricant to increase fluidity between powders.
有機金属高分子の添加は、それ自体がセラミックス化す
ることによる実質的な成形密度の向上あるいは焼成過程
での成形体の強度保持を主旨とする。The main purpose of the addition of organometallic polymers is to substantially improve the compacted density or to maintain the strength of the compact during the firing process by converting the organometallic polymer into a ceramic.
この加工体を焼成した後は、導電性高分子が熱分解し導
電性を失うので、研削加工をすることになるが、焼結前
に焼成後の形状に近ずける素地加工を本発明による方法
で施しであるため、この際の加工代の軽減につながる。After firing this processed body, the conductive polymer thermally decomposes and loses its conductivity, so it must be ground. However, the present invention allows the base material to be processed to approximate the shape after firing before sintering. Since it is applied by a method, the processing cost at this time can be reduced.
しかも、導電性高分子であるポリアセチレン、ポリフェ
ニレン、ポリピロール、並びにポリチオフェン、有機高
分子であるポリエチレン、ポリプロピレン、アタクチッ
クポリプロピレン、ＥｖＡ樹脂、ポリスチレン、エチレ
ン−アクリエート共重合体、アクリル樹脂、ワックス、
ポリアミドに種類分けされる化合物は、いずれも熱分解
によって、除去可能であるため、窒化珪素自体の性質を
損なわない。Moreover, conductive polymers such as polyacetylene, polyphenylene, polypyrrole, and polythiophene, organic polymers such as polyethylene, polypropylene, atactic polypropylene, EvA resin, polystyrene, ethylene-acrylate copolymer, acrylic resin, wax,
All of the compounds classified as polyamides can be removed by thermal decomposition, so they do not impair the properties of silicon nitride itself.
また、上記化合物を成形体から分解除去した後に、気孔
が残り、焼成体強度の劣化を引き起こしたり、分解除去
の成形体密度の低下による焼成収縮率の上昇による歪み
が残る場合がある。Furthermore, after the above-mentioned compound is decomposed and removed from the molded body, pores may remain, causing a deterioration in the strength of the fired body, or distortion may remain due to an increase in the firing shrinkage rate due to a decrease in the density of the molded body after decomposition and removal.
この点が問題になる場合には、それ自体がセラミックス
化するポリサイラゼン、ポリカルボシランを混合するこ
とで解決または軽減できる。If this problem becomes a problem, it can be solved or alleviated by mixing polycylazene or polycarbosilane, which themselves become ceramics.
有機高分子としてポリエチレン、ポリプロピレン等は、
分解温度の広域化と熱的な成形法への応用を考慮して添
加する。Polyethylene, polypropylene, etc. are organic polymers.
It is added in consideration of widening the decomposition temperature range and application to thermal molding methods.
さらに、導電性高分子として、ジメチルポリアセチレン
構造をもつ鎖状高分子の骨格となる炭素を珪素で置き換
えた化合物を用いる°場合は、この高分子自体が炭化珪
素のセラミックス化することで、焼成後は複合セラミッ
クスとなる。Furthermore, when using a compound in which the carbon that forms the backbone of a chain polymer with a dimethylpolyacetylene structure is replaced with silicon as a conductive polymer, the polymer itself becomes a ceramic of silicon carbide, so that after firing, becomes composite ceramics.
［実施例１］
窒化珪素系セラミックスとして、窒化珪素粉末を９２重
量％、焼結助剤として酸化マグネシウム５重量％、酸化
アルミニウム３重量％を用い、導電性の高分子として、
表１に示すポリアセチレンなどを前記３種混合粉末の合
計量に対して１５重量比用い、窒化珪素製のポット、ボ
ールによるボールミルを使って、有機溶媒中で混練し、
噴霧熱乾燥法による造粒を行なった。[Example 1] As a silicon nitride ceramic, 92% by weight of silicon nitride powder, 5% by weight of magnesium oxide and 3% by weight of aluminum oxide were used as sintering aids, and as a conductive polymer,
Using polyacetylene etc. shown in Table 1 at a weight ratio of 15 to the total amount of the three types of mixed powder, kneading in an organic solvent using a ball mill with a silicon nitride pot and balls,
Granulation was performed using a spray heat drying method.
得られた粉体を、１軸成形圧１０００ｋｇ ｆ ／ ｃ
ｄ、静水圧成形圧２０００ｋｇｆ／ｃ−によって、５０
Ｘ ５０ Ｘ １Ωｍ＋ｓに成形した。The obtained powder was subjected to a uniaxial molding pressure of 1000 kg f/c
d, 50 by isostatic pressing pressure 2000 kgf/c-
It was molded to X 50 X 1Ωm+s.
この成形体は、比抵抗値５ Ｘ １０’Ω・印であった
。This molded body had a specific resistance value of 5×10′Ω·mark.
これを、放電加工した条件を以下に示す。The conditions under which this was subjected to electrical discharge machining are shown below.
加工電圧・・・８０Ｖ
加工電流・・・２．ＯＡ
加工方法・・・ワイヤーカット放電加工（電極；φ０．
２真ちゅう製ワイヤー）加工速度−Ｌ、Ｏｍｔａ／ｓｉ
ｎ。Processing voltage...80V Processing current...2. OA processing method...Wire cut electric discharge machining (electrode; φ0.
2 Brass wire) Processing speed-L, Omta/si
n.
この結果、導電性高分子を用いた放電加工が可能になり
、さらに焼成すれば、比抵抗にして、、１４Ω・印の高
い非導電性を示した。As a result, electrical discharge machining using a conductive polymer became possible, and when it was further fired, it exhibited high non-conductivity with a specific resistance of 14Ω.
［実施例２］
窒化珪素系セラミックスとして、窒化珪素粉末を９２重
量％、焼結助剤として酸化マグネシウム５重量％、酸化
アルミニウム３重量％を用い、導電性の高分子としてポ
リアセチレンを前記３種混合粉末の合計量に対して１５
１１Ｉ量比用い、ポリエチレン等の各種有機高分子とし
て１５重量比程度添加し、窒化珪素製のポット、ボール
によるボールミルを使って、有機溶媒中で混練し、噴霧
熱乾燥法による造粒を行なった。[Example 2] As a silicon nitride ceramic, 92% by weight of silicon nitride powder, 5% by weight of magnesium oxide and 3% by weight of aluminum oxide were used as sintering aids, and a mixture of the above three types of polyacetylene was used as a conductive polymer. 15 for the total amount of powder
Using a weight ratio of 11I, various organic polymers such as polyethylene were added at a weight ratio of about 15, kneaded in an organic solvent using a ball mill with a silicon nitride pot and balls, and granulated by a spray heat drying method. .
得られた粉体を、１軸成形圧１０００ｋｇ ｆ ／ｄ、
静水圧成形圧２０００ｋｇｆ／ｃ−によって、５０Ｘ
５０Ｘ １０ｍ＋＊に成形した。The obtained powder was subjected to a uniaxial molding pressure of 1000 kg f /d,
50X by hydrostatic molding pressure 2000kgf/c-
It was molded to 50×10m+*.
この成形体について比抵抗値８．５Ｘ １０−４Ω・（
１）を得て、実施例１に準する放電加工を行なった。The specific resistance value of this molded body is 8.5X 10-4Ω・(
1) was obtained, and electrical discharge machining according to Example 1 was performed.
この結果、導電性高分子を用いた放電加工が可能になり
、さらに焼成すれば、比抵抗にして１０１３Ω・備の高
い非導電性を示した。As a result, electrical discharge machining using a conductive polymer became possible, and when it was further fired, it exhibited high non-conductivity with a specific resistance of 1013Ω.
［実施例３］
窒化珪素系セラミックスとして、窒化珪素粉末を９２重
量％、焼結助剤として酸化マグネシウム５重量％、酸化
アルミニウム３重量％を用い、導電性の高分子としてポ
リアセチレンを前記３種混合粉末の合計量に対して１５
重量比用い、有機金属高分子としてポリサイラゼン１５
重量比添加し、窒化珪素製のポット、ボールによるボー
ルミルを使って、有機溶媒中で混練し、噴霧熱乾燥法に
よる造粒を行なった。[Example 3] As a silicon nitride ceramic, 92% by weight of silicon nitride powder, 5% by weight of magnesium oxide and 3% by weight of aluminum oxide were used as sintering aids, and a mixture of the above three types of polyacetylene was used as a conductive polymer. 15 for the total amount of powder
Using weight ratio, polycyrazene 15 as organometallic polymer
They were added in a weight ratio, kneaded in an organic solvent using a ball mill with silicon nitride pots and balls, and granulated by a spray heat drying method.
得られた粉体を、１軸成形圧１０００ｋｇ ｆ ／ ｃ
ｊ、静水圧成形圧２０００ｋｇｆ／ｃ−によって、５０
Ｘ ５０Ｘ １０＋１１１１に成形した。The obtained powder was subjected to a uniaxial molding pressure of 1000 kg f/c
j, 50 by isostatic pressing pressure 2000 kgf/c-
It was molded to 50X 10+1111.
この成形体について比抵抗値８．５Ｘ１０’Ω・■を得
て、実施例１に準する放電加工を行なった。A specific resistance value of 8.5×10'Ω·■ was obtained for this molded body, and electrical discharge machining was performed in accordance with Example 1.
この結果、導電性高分子を用いた放電加工が可能になり
、さらに焼成すれば、比抵抗にして１０１２Ω・ｃｍの
高い非導電性を示した。As a result, electrical discharge machining using a conductive polymer became possible, and when it was further fired, it exhibited high non-conductivity with a specific resistance of 1012 Ω·cm.
［実施例４］
窒化珪素系セラミックスとして、窒化珪素粉末を９２重
量％、焼結助剤として酸化マグネシウム５重量％、酸化
アルミニウム３重量％を用い、導電性の高分子として、
ポリアセチレン構造をもち主骨格となる炭素を珪素で置
き換えた構造をもつ化合物を１５重量比用い、窒化珪素
製のポット、ボールによるボールミルを使って、有機溶
媒中で混練し、噴霧熱乾燥法による造粒を行なった。[Example 4] As a silicon nitride ceramic, 92% by weight of silicon nitride powder, 5% by weight of magnesium oxide and 3% by weight of aluminum oxide were used as sintering aids, and as a conductive polymer,
A compound having a polyacetylene structure in which the main skeleton carbon is replaced with silicon is used at a weight ratio of 15, and is kneaded in an organic solvent using a ball mill with a silicon nitride pot and balls, and then manufactured by a spray heat drying method. I did grain.
、得られた粉体を、１軸成形圧１００１００Ｏ／ｄ、静
水圧成形圧２０００ｋｇｆ／ｃ−によって、５０Ｘ ５
０Ｘ １０ｍｍに成形した。, the obtained powder was 50×5 by uniaxial molding pressure of 100100 O/d and hydrostatic molding pressure of 2000 kgf/c-.
It was molded to 0x10mm.
この成形体について比抵抗値７．５Ｘ１０−’Ω・Ｃｍ
を得て、実施例１に準する放電加工を行なった。Specific resistance value of this molded body is 7.5X10-'Ω・Cm
was obtained, and electrical discharge machining was performed in accordance with Example 1.
この結果、導電性高分子を用いた放電加工が可能になり
、さらに焼成すれば、比抵抗にして１０１３Ω・ＣＩＩ
＋の高い非導電性を示した。As a result, electrical discharge machining using a conductive polymer becomes possible, and if it is further fired, the specific resistance will be 1013Ω・CII
It showed high non-conductivity of +.
［発明の効果］
本発明によって、窒化珪素系粉末に導電性の高分子を添
加することで、素地成形体での導電化を行ない、これに
よって素地成形体での放電加工を可能にするとともに、
焼成後に絶縁性を付与できる。[Effects of the Invention] According to the present invention, by adding a conductive polymer to silicon nitride-based powder, the base molded body is made conductive, thereby making it possible to perform electrical discharge machining on the base molded body, and
Insulating properties can be imparted after firing.
また、これまでの導電性窒化珪素セラミックスの問題点
であった焼成後の耐酸化性、高温強さを保持するとき、
もともとの研削のみの加工よりも複雑かつ迅速な加工が
できる。In addition, when maintaining the oxidation resistance and high-temperature strength after firing, which were problems with conventional conductive silicon nitride ceramics,
It allows for more complex and faster machining than the original grinding-only machining.
代 理 人 弁理士 茶野木 立 夫手続補正書（
自発）
昭和６３年３月７日Agent Patent Attorney Tatsuo Chanoki Procedural Amendment (
(Voluntary) March 7, 1986
Claims (2)
量％の導電性高分子を加え、成形して、放電加工するこ
とを特徴とする窒化珪素系セラミックス成形体の放電加
工方法。1. A method for electrical discharge machining of a silicon nitride ceramic molded body, which comprises adding 3 to 30% by weight of a conductive polymer to a silicon nitride ceramic raw material, forming the mixture, and performing electrical discharge machining.
量％の導電性高分子と、０．１〜２０重量％の有機高分
子または有機金属高分子を加え、成形して、放電加工す
ることを特徴とする窒化珪素系セラミックス成形体の放
電加工方法。2. It is characterized by adding 3 to 30% by weight of a conductive polymer and 0.1 to 20% by weight of an organic polymer or an organometallic polymer to a silicon nitride-based ceramic raw material, forming it, and subjecting it to electrical discharge machining. A method for electric discharge machining of a silicon nitride ceramic molded body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63021386A JPH01197366A (en) | 1988-02-02 | 1988-02-02 | Discharge working method for silicon nitride-base molded ceramic body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63021386A JPH01197366A (en) | 1988-02-02 | 1988-02-02 | Discharge working method for silicon nitride-base molded ceramic body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01197366A true JPH01197366A (en) | 1989-08-09 |
Family
ID=12053641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63021386A Pending JPH01197366A (en) | 1988-02-02 | 1988-02-02 | Discharge working method for silicon nitride-base molded ceramic body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01197366A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020014098A (en) * | 2000-08-16 | 2002-02-25 | 박종섭 | Apparatus for hard baking of a photo resist film pattern |
-
1988
- 1988-02-02 JP JP63021386A patent/JPH01197366A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020014098A (en) * | 2000-08-16 | 2002-02-25 | 박종섭 | Apparatus for hard baking of a photo resist film pattern |
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