JPH01194351A - Thin film semiconductor device - Google Patents

Thin film semiconductor device

Info

Publication number
JPH01194351A
JPH01194351A JP1691788A JP1691788A JPH01194351A JP H01194351 A JPH01194351 A JP H01194351A JP 1691788 A JP1691788 A JP 1691788A JP 1691788 A JP1691788 A JP 1691788A JP H01194351 A JPH01194351 A JP H01194351A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
tft
tfts
thin film
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1691788A
Inventor
Nobutake Konishi
Akio Mimura
Saburo Oikawa
Kikuo Ono
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To make an operation speed of a driving TFT faster than that of a switching TFT without generating a ununiformity of a thin film and reducing the image quality, by making a second semiconductor thin film thicker than a first one which is formed on the same substrate where the second semiconductor thin film is formed.
CONSTITUTION: About 30,000 pieces of switching TFTs (thin film transistors) 20 are arranged in the form of a matrix in an area 2 on a glass substrate 1 and about 3,000 pieces driving TFT's 30 are arranged in an area 3. Each of the TFTs 20 is a multi-crystal silicon film 200 formed on the substrate 1, having a gate electrode 5 on it with a gate film 4 put between. In a like manner, each of the TFTs 30 is a multi-crystal silicon film 300 formed on the substrate 1, having a gate electrode 5 on it with a gate film 4 put between. Each TFT 20 and 30 also have source areas 21 and 31, drain areas 22 and 32 and channel areas 23 and 33 respectively. By making the film 300 thicker than the film 200, the operation speed of the TFT 30 can be faster than that of the TFT 20 without injuring the uniformity of the characteristics of the TFTs 30 and without increasing the reverse leak current of the TFTs 20.
COPYRIGHT: (C)1989,JPO&Japio
JP1691788A 1988-01-29 1988-01-29 Thin film semiconductor device Pending JPH01194351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1691788A JPH01194351A (en) 1988-01-29 1988-01-29 Thin film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1691788A JPH01194351A (en) 1988-01-29 1988-01-29 Thin film semiconductor device

Publications (1)

Publication Number Publication Date
JPH01194351A true true JPH01194351A (en) 1989-08-04

Family

ID=11929485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1691788A Pending JPH01194351A (en) 1988-01-29 1988-01-29 Thin film semiconductor device

Country Status (1)

Country Link
JP (1) JPH01194351A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04279064A (en) * 1991-03-07 1992-10-05 Sharp Corp Display device
US5530266A (en) * 1991-08-02 1996-06-25 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US5656825A (en) * 1994-06-14 1997-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having crystalline semiconductor layer obtained by irradiation
US5696388A (en) * 1993-08-10 1997-12-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors for the peripheral circuit portion and the pixel portion
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6337232B1 (en) 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
US6613613B2 (en) 1994-08-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Thin film type monolithic semiconductor device
WO2003105236A1 (en) * 2002-06-07 2003-12-18 ソニー株式会社 Display unit and production method therefor, and projection type display unit
US6797550B2 (en) 2001-12-21 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6911358B2 (en) 2001-12-28 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2005223027A (en) * 2004-02-04 2005-08-18 Sony Corp Display device and manufacturing method therefor
JP2008182124A (en) * 2007-01-25 2008-08-07 Semiconductor Energy Lab Co Ltd Display
US7632725B2 (en) 2003-04-25 2009-12-15 Tpo Displays Corp. Method of forming ESD protection device with thick poly film
JP2017046007A (en) * 2009-09-16 2017-03-02 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04279064A (en) * 1991-03-07 1992-10-05 Sharp Corp Display device
US5530266A (en) * 1991-08-02 1996-06-25 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
US5827755A (en) * 1991-08-02 1998-10-27 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US5696388A (en) * 1993-08-10 1997-12-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors for the peripheral circuit portion and the pixel portion
US5940690A (en) * 1994-06-14 1999-08-17 Kusumoto; Naoto Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region
US6541795B2 (en) 1994-06-14 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device and production method for the same
US5656825A (en) * 1994-06-14 1997-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having crystalline semiconductor layer obtained by irradiation
US6613613B2 (en) 1994-08-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Thin film type monolithic semiconductor device
US6337232B1 (en) 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
US7319055B2 (en) 2001-12-21 2008-01-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam
US6797550B2 (en) 2001-12-21 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US7129121B2 (en) 2001-12-28 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6911358B2 (en) 2001-12-28 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7407840B2 (en) 2002-06-07 2008-08-05 Sony Corporation Display device, method of production of the same, and projection type display device
JPWO2003105236A1 (en) * 2002-06-07 2005-10-13 ソニー株式会社 Display device and a method of manufacturing the same, and a projection display device
US7189993B2 (en) 2002-06-07 2007-03-13 Sony Corporation Display device, method of production of the same, and projection type display device
WO2003105236A1 (en) * 2002-06-07 2003-12-18 ソニー株式会社 Display unit and production method therefor, and projection type display unit
JP4631437B2 (en) * 2002-06-07 2011-02-23 ソニー株式会社 Display device and a method of manufacturing the same, and a projection display device
CN100592534C (en) 2002-06-07 2010-02-24 索尼株式会社 Display unit and production method therefor, and projection type display unit
US7588976B2 (en) 2002-06-07 2009-09-15 Sony Corporation Display device, method of production of the same, and projection type display device
US7632725B2 (en) 2003-04-25 2009-12-15 Tpo Displays Corp. Method of forming ESD protection device with thick poly film
JP2005223027A (en) * 2004-02-04 2005-08-18 Sony Corp Display device and manufacturing method therefor
JP2008182124A (en) * 2007-01-25 2008-08-07 Semiconductor Energy Lab Co Ltd Display
JP2017046007A (en) * 2009-09-16 2017-03-02 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method

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