JPH01191346A - Optical information recording medium - Google Patents
Optical information recording mediumInfo
- Publication number
- JPH01191346A JPH01191346A JP63014219A JP1421988A JPH01191346A JP H01191346 A JPH01191346 A JP H01191346A JP 63014219 A JP63014219 A JP 63014219A JP 1421988 A JP1421988 A JP 1421988A JP H01191346 A JPH01191346 A JP H01191346A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- recording medium
- film
- optical information
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 10
- 239000011347 resin Substances 0.000 abstract description 12
- 229920005989 resin Polymers 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract description 3
- 239000000428 dust Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000001556 precipitation Methods 0.000 abstract description 2
- 229910005900 GeTe Inorganic materials 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 13
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- -1 etc. Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光ビームを用いて情報が記録再生される光記
録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical recording medium on which information is recorded and reproduced using a light beam.
テルル化ゲルマニウム（ＧｅＴｅ）は、光記録材料とし
て記録感度が高く、再生信号の信号対雑音比（ＣＮＲ）
を大きくすることができる好適な材料である。Germanium telluride (GeTe) has high recording sensitivity as an optical recording material, and has a low signal-to-noise ratio (CNR) of the reproduced signal.
It is a suitable material that can increase the size.
さて、光情報記録媒体は、情報の長期保存、例えば１０
年以上の目的に使用されることがあり、高温高湿の環境
下に放置されても記録材料の変化がなく、記録情報を正
確に読み書きできることが必要である。Now, optical information recording media are used for long-term storage of information, for example, 10
Since the recording material may be used for many years or more, it is necessary that the recording material does not change even if it is left in an environment of high temperature and humidity, and that recorded information can be read and written accurately.
ＧｅＴｅ材料はかかる点についてみると、その薄膜が高
温高湿の環境下において徐々にではあるが酸化腐食し反
射率や透過重厚光学的性質が変化する現象がある。Regarding this point, GeTe material has a phenomenon in which its thin film undergoes oxidative corrosion, albeit gradually, in a high temperature and high humidity environment, resulting in changes in reflectance and transmission heavy optical properties.
この原因として、ＧｅＴｅ結晶は菱面体構造をしている
が、原子半径の小さい他の原子が侵入することのできる
すきまが存在することをあげることが出来る。即ち、非
晶質相のＧｅＴｅ薄膜中のＧｅ−Ｔｅ結晶原子間距離は
、均一でな（非常に広い分布をもつために、ＧｅＴｅａ
膜が高温高湿の環境下におかれると、原子半径の小さい
酸素がこのすきまに侵入し、Ｇｅ−Ｔｅ、Ｇｅ−Ｇｅ。This can be attributed to the fact that although the GeTe crystal has a rhombohedral structure, there are gaps through which other atoms with small atomic radii can enter. That is, the distance between Ge-Te crystal atoms in the amorphous phase GeTe thin film is not uniform (it has a very wide distribution, so the GeTea
When the film is placed in a high temperature and high humidity environment, oxygen with a small atomic radius enters this gap, forming Ge-Te and Ge-Ge.
Ｔｅ−Ｔｅ結合を切断し、Ｇｅｍ□、Ｔｅｎｔとなって
徐々に薄膜を酸化させる。The Te-Te bond is cut to form Gem□ and Tent, and the thin film is gradually oxidized.
この為、従来は、ＧｅＴｅ薄膜に酸化物、窒化物等の無
機薄膜を被着させて保護膜とし、高温高湿環境下におけ
るＧｅＴｅ薄膜の劣化を防止していたが、上記保護膜作
製に長時間を要したり、光情報記録媒体作製工程の稽雑
化や媒体製造価格の上昇を招くという欠点があった。For this reason, in the past, inorganic thin films such as oxides and nitrides were deposited on the GeTe thin film as a protective film to prevent the GeTe thin film from deteriorating in high temperature and high humidity environments, but it took a long time to prepare the above protective film. This method has disadvantages in that it takes time, complicates the optical information recording medium manufacturing process, and increases the media manufacturing price.
本出願人はこのような欠点を解消し、高温高温環境下に
放置されても、正確に情報を記録再生できる光情報記録
媒体を提供し得る記録薄膜として、ＧｅＴｅ材料にＣｕ
を添加した材料の記録薄膜を見出した。この様なＣｕが
添加されたＧｅＴｅ薄膜においては、Ｃｕ原子によって
あらかじめＧｅ−Ｔｅ格子内のすきまが埋められている
ため酸素は侵入しにくく、またわずかに侵入した酸素は
ＣＵと結合しＣｕＯとなって安定するので、ＧｅＴｅ薄
膜は酸素の侵入による劣化から保護される。The present applicant has solved these drawbacks by adding Cu to GeTe material as a recording thin film that can provide an optical information recording medium that can accurately record and reproduce information even when left in a high-temperature environment.
We have discovered a recording thin film made of a material doped with . In such a Cu-doped GeTe thin film, the gaps in the Ge-Te lattice are filled in advance by Cu atoms, making it difficult for oxygen to enter, and the small amount of oxygen that enters combines with CU to form CuO. As a result, the GeTe thin film is protected from deterioration due to oxygen intrusion.
ところが、上記Ｃｕ添加Ｇ ｅ Ｔ ｅ 薄ＪｒＩＪを
光記録膜とする光情報記録媒体は、Ｃｕ添加量が多いほ
ど寿命が長くなるものの、逆に信号対雑音比（ＣＮＲ）
は徐々に劣化し、従って、Ｃｕが３原子パーセント以上
では信転できる光情報記録媒体としての性能が得難＜、
又Ｃｕ含有量をへらしたのでは寿命があまり延びないと
いう問題があった。However, although the lifetime of an optical information recording medium using the Cu-added G e T e thin JrIJ as an optical recording film becomes longer as the amount of Cu added increases, the signal-to-noise ratio (CNR)
gradually deteriorates, and therefore, if the Cu content exceeds 3 atomic percent, it is difficult to obtain reliable performance as an optical information recording medium.
There is also the problem that reducing the Cu content does not extend the life very much.
部ち、ＧｅＴｅ薄膜が記録光ビームの照射を受けて非晶
質相から結晶貧相に転移すると、ＧｅＴｅ結合原子間距
離の分布は均一化され、Ｃｕ原子が結晶質相Ｇｅ−Ｔｅ
格子内に入り得る量は制限され、非晶質相Ｇｅ−Ｔｅ格
子内にあったＣｕ原子がＧｅＴｅ薄膜の結晶化によって
Ｇ ｅ −Ｔ’ ｅ結晶格子外に排斥されＣｕが析出す
る。こうして、析出したＣｕが再生光ビームの反射率を
変化させて雑音成分となり、上述の如（ＣＮＲを低下さ
せるものと思われる。However, when the GeTe thin film is irradiated with a recording light beam and transforms from an amorphous phase to a poorly crystalline phase, the distribution of distances between GeTe bond atoms becomes uniform, and Cu atoms change into crystalline phase Ge-Te.
The amount that can enter the lattice is limited, and Cu atoms that were in the amorphous phase Ge-Te lattice are expelled from the Ge-T'e crystal lattice by crystallization of the GeTe thin film, and Cu is precipitated. In this way, the precipitated Cu changes the reflectance of the reproduction light beam and becomes a noise component, which seems to reduce the CNR as described above.
従って本発明は、寿命が長く、しかもＣＮＲの大きい光
情報記録媒体を提供することを目的としてなされたもの
である。Therefore, the present invention has been made with the object of providing an optical information recording medium that has a long life and a high CNR.
ｃ問題点を解決するための手段〕
本発明による光情報記録媒体は、基体上に形成された光
記録薄膜と、該光記録薄膜上に形成された保護膜“から
なる光情報記録媒体において、前記光記録薄膜の主成分
をＣｕが添加されたＧｅ−Ｔｅ系材料とし、前記光記録
薄膜中のＧｅの一部がｐｂで置換されてなることを特徴
とするものである。Means for Solving Problem c] An optical information recording medium according to the present invention comprises an optical recording thin film formed on a substrate and a protective film formed on the optical recording thin film. The main component of the optical recording thin film is a Ge-Te based material to which Cu is added, and a part of the Ge in the optical recording thin film is replaced with PB.
〔作用）
この様に本発明による光情報記録媒体においては、光記
録薄膜中のＧｅの一部がｐｂで置換されているためＧｅ
（Ｐｂ） −Ｔｅ結合の原子間距離はＧｅ−Ｔｅ結合
原子間距離よりも大きくなる。[Function] As described above, in the optical information recording medium according to the present invention, since a part of Ge in the optical recording thin film is replaced with pb, Ge
The interatomic distance of the (Pb) -Te bond is larger than the interatomic distance of the Ge-Te bond.
従って結晶相ＧｅＰｂＴｅ格子内に入りうるＣｕ原子の
量が大きくなり、ＧｅＰｂＴｅ薄膜が結晶化してもＣｕ
の析出は起こらず、ＣＮＲも低下することなく、耐酸化
腐食性だけが向上する。Therefore, the amount of Cu atoms that can enter the crystal phase GePbTe lattice increases, and even if the GePbTe thin film crystallizes, Cu atoms
No precipitation occurs, CNR does not decrease, and only oxidation corrosion resistance improves.
第１図は、本発明による光情報記録媒体の一実施例を示
したものである。即ち、１１はポリカーボネート基板で
あり、その上に光情報薄膜としてＣｕが添加されたｃｅ
ｐｂＴｅｉ膜１２を存している。更に、該記録薄膜上に
傷や埃を防止するための樹脂保護膜１３を積層した。FIG. 1 shows an embodiment of an optical information recording medium according to the present invention. That is, 11 is a polycarbonate substrate, on which is added Cu as an optical information thin film.
A pbTei film 12 is present. Furthermore, a resin protective film 13 was laminated on the recording thin film to prevent scratches and dust.
ここで基板工１はポリカーボネートに限ることなく、従
来からの公知のＰＭＭＡ、ポリオレフィン、エポキシ等
の透明樹脂板、ガラス板を使用できる。Here, the substrate material 1 is not limited to polycarbonate, and conventionally known transparent resin plates such as PMMA, polyolefin, epoxy, etc., and glass plates can be used.
光記録薄膜１２はスパッタリンク法および蒸着法にて作
製する。The optical recording thin film 12 is produced by a sputter link method and a vapor deposition method.
第２図は、該光記録薄膜を作製する時に使用するスパッ
タリング装置の概略図である。真空槽２１内の上部に設
けられた回転式基板支持テーブル２２の下面に、ポリカ
ーボネート基板１１をとりつけ、真空槽２１内を約５Ｘ
１０−’Ｐａに排気後、真空槽２１内にＡｒ等の活性ガ
スを導入してガス圧を５Ｘ１０−’Ｐａにする。この状
態でＧｅ３４原子パーセント、Ｐｂ１６原子パーセント
、Ｔｅ５０原子パーセントからなる合金ターゲット２３
とＣｕターゲット２４に同時に高周波電流を印加すると
、スパソタリオ゛作用によって、基板１１上にＣｕが添
加されたＧｅＴｅ１膜であって、該薄膜中のＧｅの一部
がｐｂで置換されたＣｕ−ＧｅＰｂＴｅが形成される。FIG. 2 is a schematic diagram of a sputtering apparatus used when producing the optical recording thin film. The polycarbonate substrate 11 is attached to the bottom surface of the rotary substrate support table 22 provided at the upper part of the vacuum chamber 21, and the inside of the vacuum chamber 21 is rotated approximately 5X.
After evacuation to 10-'Pa, active gas such as Ar is introduced into the vacuum chamber 21 to make the gas pressure 5×10-'Pa. In this state, an alloy target 23 consisting of 34 atomic percent Ge, 16 atomic percent Pb, and 50 atomic percent Te
When a high-frequency current is simultaneously applied to the Cu target 24 and the Cu target 24, a Cu-GePbTe film, which is a Cu-doped GeTe film on the substrate 11 and in which a part of the Ge in the thin film has been replaced by PB, is formed by the spasotarion action. It is formed.
このとき該薄膜中のｐｂ量は、ＧｅＰｂＴｅ合金ターゲ
ット２３中のＰｂ含有量を変化させることで任意に調整
することができ、ＣｕｌはＣｕターゲット２４に印加さ
れる高周波電力によって任意に調整することができる。At this time, the amount of Pb in the thin film can be adjusted arbitrarily by changing the Pb content in the GePbTe alloy target 23, and Cul can be adjusted arbitrarily by changing the high frequency power applied to the Cu target 24. can.
また、Ｐｂを調整する他の方法としては、ターゲットに
Ｇ−ｅ５０原子パーセント、Ｔｅ５０原子パーセントの
合金を用い、該ターゲット上にＰｂ５０原子パーセント
、Ｔｅ５０原子パーセントの合金チップを載置し、スパ
フタリングすることによって、Ｇｅの一部をＰｂで置換
したＧｅＰｂＴｅ薄膜を得るさい、該ＰｂＴｅ合金チッ
プの数を増減させると、それに伴いＧ ｅ Ｐ ｂ Ｔ
ｅ ｌ膜中のＰｂ量を増減させることができる。Another method for adjusting Pb is to use an alloy of 50 atomic percent Ge and 50 atomic percent Te as a target, place an alloy chip of 50 atomic percent Pb and 50 atomic percent Te on the target, and perform sputtering. When obtaining a GePbTe thin film in which a part of Ge is replaced with Pb, by increasing or decreasing the number of PbTe alloy chips, G e P b T
The amount of Pb in the el film can be increased or decreased.
また、Ｇｅ、Ｐｂ、Ｔｅ量を一定としてＣｕを変化させ
るには、上記方法以外に、ＧｅＰｂＴｅ合金ターゲット
２３上にＣｕチップを載置してスパッタすることで、Ｃ
ｕ添加ＧｅＰｂＴｅＦＩ［膜を得るさい、該Ｃｕチップ
の数を増減させるとＣｕが添加されたＧｅＰｂＴｅ薄膜
中のＣｕ量を増減させることができる。In addition to the above method, in order to change Cu while keeping the amounts of Ge, Pb, and Te constant, a Cu chip is placed on the GePbTe alloy target 23 and sputtered.
When obtaining a u-doped GePbTeFI film, by increasing or decreasing the number of Cu chips, the amount of Cu in the Cu-doped GePbTe thin film can be increased or decreased.
真空蒸着法においても同様に、ＧｅＰｂＴｅ合金とＣｕ
の２種の蒸発源からの２源同時蒸着法で、ＧｅＰｂＴｅ
合金の蒸発速度とＣｕの蒸発速度とを調整してＣｕ添加
ＧｅＰｂＴｅ薄膜が得られる。Similarly, in the vacuum evaporation method, GePbTe alloy and Cu
GePbTe
A Cu-doped GePbTe thin film is obtained by adjusting the evaporation rate of the alloy and the evaporation rate of Cu.
樹脂保護膜１３は、紫外線硬化型樹脂液をスピンナにて
塗布し、その後紫外線を照射すると樹脂は硬化し、皮膜
を形成する。樹脂保護ｒｒＩｉ１３は紫外線硬化型樹脂
のみならず、湿気硬化型樹脂、二液反応型樹脂、溶剤型
樹脂いずれも適用できる。The resin protective film 13 is formed by applying an ultraviolet curable resin liquid using a spinner, and then irradiating ultraviolet rays to cure the resin and form a film. The resin protection rrIi 13 can be applied not only to ultraviolet curable resins but also to moisture curable resins, two-component reactive resins, and solvent-based resins.
この様にして作製したディスク状光情報記録媒体にレー
ザ光を照射して、回転数１８００ｒｍｐ。The disc-shaped optical information recording medium produced in this manner was irradiated with a laser beam at a rotational speed of 1800 rpm.
周波数ＩＭＨｚの信号を記録し、その後ＪＩＳＣ５０２
４Ｍ−１の温湿度加速試験を行い、ビット誤り率の増加
割合から媒体寿命を決定した。第１表に２本実施例によ
る光情報記録媒体の光記録膜組成、光記録膜の結晶化温
度、ＣＮＲ，媒体寿命を示す。また比較のためにＣｕが
添加されたＧｅＴｅ薄膜を光記録膜とする従来の光情報
記録媒体の光記録組成、光記録膜結晶化温度、ＣＮＲ，
媒体寿命も示す。Record the signal with a frequency of IMHz, then JISC502
A 4M-1 temperature and humidity accelerated test was conducted, and the medium life was determined from the rate of increase in the bit error rate. Table 1 shows the optical recording film composition, crystallization temperature of the optical recording film, CNR, and medium life of the optical information recording medium according to the two examples. For comparison, the optical recording composition, optical recording film crystallization temperature, CNR,
It also shows the media lifespan.
第１表
この様に、本実施例による光情報記録媒体はＧｅＴｅ光
記録膜中のＧｅの約３２％がｐｂで置換されているため
に、添加するＣｕ量を５原子パーセントと大きくしても
、ＣＮＲは５１ｄＢと高い値を示し、従来例よりも多量
にＣｕが添加されているので媒体寿命は１８年と極めて
長くなっている。As shown in Table 1, in the optical information recording medium of this example, approximately 32% of Ge in the GeTe optical recording film is replaced with PB, so even if the amount of Cu added is increased to 5 atomic percent, , CNR shows a high value of 51 dB, and since a larger amount of Cu is added than in the conventional example, the medium life is extremely long at 18 years.
第３図には、本実施例と同様にして作製した本発明によ
る光情報記録媒体の光記録膜中のＰｂ量とＣｕ量を種々
に変化させた場合のｐｂ量、 Ｃｕ量と該光情報記録
媒体のＣＮＲ，媒体寿命の関係を示す。FIG. 3 shows the amount of Pb, the amount of Cu, and the optical information when the amount of Pb and the amount of Cu in the optical recording film of the optical information recording medium according to the present invention manufactured in the same manner as in this example were varied. The relationship between CNR of a recording medium and medium life is shown.
従来例、においては、点線３３の如（ＧｅＴｅ薄膜にＣ
ｕを添加するにしたがって、媒体寿命は一点鎖線３４の
如く向上するものの、ＣＮＲが点線３３の如く徐々に低
下し、Ｃｕ添加量が３原子パーセント以上になると、得
られるＣＮＲは４５ｄＢ以下となり、光情報記録媒体と
しての性能は不十分である。Ｃｕ添加量が３原子パーセ
ント未満では光情報記録媒体としての性能は得られるが
媒体寿命は６年未満となり情報長期保存の用途には適さ
なくなる。In the conventional example, as shown by dotted line 33 (C
As u is added, the medium life improves as shown by the dotted line 34, but the CNR gradually decreases as shown by the dotted line 33, and when the amount of Cu added exceeds 3 atomic percent, the obtained CNR becomes 45 dB or less, and the optical Its performance as an information recording medium is insufficient. If the amount of Cu added is less than 3 atomic percent, performance as an optical information recording medium can be obtained, but the medium life will be less than 6 years, making it unsuitable for long-term storage of information.
一方２本発明による光情報記録媒体においては、ＧｅＴ
ｅ光記録膜中のＧｅの一部がｐｂで置換されているため
に、Ｃｕ添加量を増してもＣＮＲの低下は小さく、した
がってＣｕ添加量をおおきくして媒体寿命を長くするこ
とができる。光記録膜中のＰｂＩが２２原子パーセント
においては、ＣＵ添加量が６原子パーセントであっても
ＣＮＲは５５ｄＢが得られ、寿命も２０年以上と極めて
長い。On the other hand, in the optical information recording medium according to the present invention, GeT
Since a portion of Ge in the e-optical recording film is replaced with PB, even if the amount of Cu added is increased, the decrease in CNR is small, and therefore, the lifetime of the medium can be extended by increasing the amount of Cu added. When the PbI content in the optical recording film is 22 atomic percent, a CNR of 55 dB can be obtained even if the amount of CU added is 6 atomic percent, and the lifetime is extremely long, 20 years or more.
以上説明したように、本発明による光情報記録媒体にお
いては、光記録膜はＣｕを添加したＧｅＴｅ薄膜を主成
分とし、Ｇｅの一部がＰｂで置換されているために、光
情報記録媒体のＣＮＲを劣化させることなく、Ｃｕ添加
量を増すことができ、したがって該光情報記録媒体の寿
命を長くすることができる。As explained above, in the optical information recording medium according to the present invention, the optical recording film is mainly composed of a GeTe thin film doped with Cu, and a part of Ge is replaced with Pb. The amount of Cu added can be increased without deteriorating the CNR, and therefore the life of the optical information recording medium can be extended.
第一図は本発明による光情報記録媒体の一実施例を示す
断面図、第２図は本発明に適用しうるスパッタリング装
置の概略図、第３図はその特性の説明に供する線図であ
る。
１１・・・基板
１２・・・光記録薄膜
１３・・・樹脂保護膜
２１・・・真空槽
２２・・・基板支持テーブル
２３・・・ＧｅＰｂＴｅターゲット
２４・・・ＣｕターゲットFIG. 1 is a cross-sectional view showing an embodiment of the optical information recording medium according to the present invention, FIG. 2 is a schematic diagram of a sputtering apparatus applicable to the present invention, and FIG. 3 is a diagram for explaining its characteristics. . 11... Substrate 12... Optical recording thin film 13... Resin protective film 21... Vacuum chamber 22... Substrate support table 23... GePbTe target 24... Cu target
Claims (1)
成された保護膜からなる光情報記録媒体において、前記
光記録薄膜の主成分をＣｕが添加されたＧｅ−Ｔｅ系材
料とし、前記光記録薄膜中のＧｅの一部がＰｂで置換さ
れてなることを特徴とする光情報記録媒体。In an optical information recording medium comprising an optical recording thin film formed on a substrate and a protective film formed on the optical recording thin film, the main component of the optical recording thin film is a Ge-Te-based material doped with Cu, An optical information recording medium characterized in that a part of Ge in the optical recording thin film is replaced with Pb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63014219A JP2696754B2 (en) | 1988-01-25 | 1988-01-25 | Optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63014219A JP2696754B2 (en) | 1988-01-25 | 1988-01-25 | Optical information recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01191346A true JPH01191346A (en) | 1989-08-01 |
| JP2696754B2 JP2696754B2 (en) | 1998-01-14 |
Family
ID=11854969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63014219A Expired - Fee Related JP2696754B2 (en) | 1988-01-25 | 1988-01-25 | Optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2696754B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62202345A (en) * | 1986-02-28 | 1987-09-07 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type optical recording medium |
| JPS62208442A (en) * | 1986-03-07 | 1987-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type optical recording medium |
-
1988
- 1988-01-25 JP JP63014219A patent/JP2696754B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62202345A (en) * | 1986-02-28 | 1987-09-07 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type optical recording medium |
| JPS62208442A (en) * | 1986-03-07 | 1987-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Rewriting type optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2696754B2 (en) | 1998-01-14 |
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