JPH01189965A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPH01189965A JPH01189965A JP63014926A JP1492688A JPH01189965A JP H01189965 A JPH01189965 A JP H01189965A JP 63014926 A JP63014926 A JP 63014926A JP 1492688 A JP1492688 A JP 1492688A JP H01189965 A JPH01189965 A JP H01189965A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic compound
- substrate
- gate electrode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 15
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000010408 film Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000004057 1,4-benzoquinones Chemical class 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- -1 8-substituted porphyrin Chemical group 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、電界効果トランジスタに関するものである。[Detailed description of the invention] Industrial applications The present invention relates to field effect transistors.
従来の技術
従来、電界効果トランジスタを構成する半導体材料ｕ、
単結晶シリコン、アモルファスシリコン。BACKGROUND OF THE INVENTION Conventionally, semiconductor materials constituting a field effect transistor are
Single crystal silicon, amorphous silicon.
ポリシリコン、硫化カドミウムなどの無機材料が使われ
ている。単結晶基板を用いる方法では、基板製造装置の
制約から、大面積化が困難である。Inorganic materials such as polysilicon and cadmium sulfide are used. In the method using a single crystal substrate, it is difficult to increase the area due to limitations of substrate manufacturing equipment.
また、プラズマ堆積法によシ形成されたアモルファスシ
リコンやポリシリコンを半導体層に使用した電界効果ト
ランジスタの製造方法があるが、大面積に均一に歩留シ
よく製造することは、プラズマ制御の問題から困難であ
る。以上のよう罠、無機半導体では任意の形状の基板に
電界効果トランジスタを形成するＫは多くの問題を抱え
ている。There is also a method for manufacturing field effect transistors that uses amorphous silicon or polysilicon formed by plasma deposition as a semiconductor layer, but manufacturing uniformly over a large area with a high yield is a problem in plasma control. It is difficult because As described above, inorganic semiconductors have many problems in forming field effect transistors on substrates of arbitrary shapes.
そこで、有機化合物を半導体層に使用した技術提案（例
えば特開昭５８−１１４４６５号公報など）がなされて
いる。提案されている有機高分子半導体の製造方法は、
大面積基板に触媒を塗布し、その後原料ガスを基板上に
導入する方法である。しかし、触媒を大面積に均一に塗
布することは困難であり、さらに、原料ガスを大面積に
均一に導入することも困難である。Therefore, technical proposals have been made in which organic compounds are used in semiconductor layers (for example, Japanese Patent Application Laid-Open No. 114465/1983). The proposed method for manufacturing organic polymer semiconductors is
This is a method in which a catalyst is applied to a large-area substrate, and then a raw material gas is introduced onto the substrate. However, it is difficult to uniformly apply the catalyst over a large area, and furthermore, it is difficult to uniformly introduce the raw material gas over a large area.
また、別の提案として、半導体層に有機化合物の電解重
合膜を使用する方法がある、しかしこの方法も大面積に
均一に重合膜を形成することは困難であり、脱ドープ処
理を行う必要がある。Another proposal is to use an electrolytically polymerized film of an organic compound for the semiconductor layer, but this method also makes it difficult to form a polymerized film uniformly over a large area, and requires dedoping. be.
さらにクラスターイオンビーム蒸着などの蒸着法でフタ
ロシアニンなどの有機化合物を蒸着し、これを半導体層
とした素子の形成法が提案されている。この方法も蒸着
装置を使うため、大面積に均一に歩留りよく素子を製造
することは困難である。Furthermore, a method has been proposed in which an organic compound such as phthalocyanine is deposited by a vapor deposition method such as cluster ion beam vapor deposition, and an element is formed using this as a semiconductor layer. Since this method also uses a vapor deposition apparatus, it is difficult to manufacture devices uniformly over a large area with a high yield.
発明が解決しようとする課題
本発明は電界効果トランジスタを大面積基板に高密度、
均一、高歩留りに形成しようとするものである。Problems to be Solved by the Invention The present invention aims to fabricate field-effect transistors on a large-area substrate with high density.
It is intended to be formed uniformly and at a high yield.
課題を解決するための手段
ゲート電極、ソース電極およびドレーン電極からなる電
極系と、絶縁膜と、板状低分子の有機化合物からなる半
導体層を備えた電界効果トランジスタを構成する。ここ
で使用される板状低分子の有機化合物はディスコティッ
ク液晶相をしめす化合物からなる。Means for Solving the Problems A field effect transistor is constructed which includes an electrode system consisting of a gate electrode, a source electrode, and a drain electrode, an insulating film, and a semiconductor layer consisting of a plate-shaped low-molecular organic compound. The plate-like low-molecular organic compound used here consists of a compound exhibiting a discotic liquid crystal phase.
作用
前記有機化合物の薄膜を半導体層として使用する方法は
、溶液から薄膜を得るこ、とが可能であるので、大面積
に半導体層を使用した素子を集積する場合であっても、
均一に、歩留シよく作成することが容易である。Function: The method of using a thin film of an organic compound as a semiconductor layer allows the thin film to be obtained from a solution, so even when devices using semiconductor layers are integrated over a large area,
It is easy to produce uniformly and with good yield.
実施例
本発明に使用可能な板状低分子の有機化合物はディスコ
ティック液晶相を示す化合物がよい。例示すると以下の
ごとくである。Examples The plate-like low molecular weight organic compound that can be used in the present invention is preferably a compound that exhibits a discotic liquid crystal phase. An example is as follows.
■フタロシアニンの８置換体
■ポリフィリンの８置換体
ＲＲ’
■ベンゼンの６置換体
ｖ ｉ
■ベンゾキノンの４置換体
ＯＯ−Ｒ
■ルフィガロール（Ｄ６置換Ｋ
Ｒ
Ｒ〆 ＼バ
これら化合物の単独あるいは混、金物の薄膜を使用する
ことによシ半導体層が形成される。この理由は次のよう
に推測される。すなわち、溶媒の蒸発過程において、有
機化合物と基板との相互作用により、板状に分子が配向
し結晶化するためである。■8-substituted phthalocyanine ■8-substituted porphyrin RR' ■6-substituted benzene v i ■4-substituted benzoquinone OO-R ■Lufigarol (D6-substituted K A semiconductor layer is formed by using a thin film of .The reason for this is presumed to be as follows: During the evaporation process of the solvent, molecules are formed in a plate shape due to the interaction between the organic compound and the substrate. This is for orientation and crystallization.
次に、図面を用いて本発明の電界効果トランジスタにつ
いて説明する。Next, the field effect transistor of the present invention will be explained using the drawings.
第１図は本発明の一実施例である電界効果トランジスタ
の素子断面図であり、１は絶縁基板、２はゲート電極、
３は絶縁膜、４は半導体層を構成する有機化合物、５，
６はソース電極及びドレイン電極である。製造法は、絶
縁基板１上にゲート電ＦＭ２を形成し、ゲート電極２上
に電子ビーム蒸着法で絶縁膜３を形成し、絶縁膜に接し
て間隙を設けてソース電極とドレイン電極を形成、さら
にソース電極とドレイン電極の間隙に板状低分子の有機
化合物の薄膜を形成する。FIG. 1 is a cross-sectional view of a field effect transistor according to an embodiment of the present invention, in which 1 is an insulating substrate, 2 is a gate electrode,
3 is an insulating film, 4 is an organic compound constituting a semiconductor layer, 5,
6 is a source electrode and a drain electrode. The manufacturing method is to form a gate electrode FM2 on an insulating substrate 1, form an insulating film 3 on the gate electrode 2 by electron beam evaporation, form a source electrode and a drain electrode with a gap in contact with the insulating film, Further, a thin film of a plate-like low-molecular organic compound is formed in the gap between the source electrode and the drain electrode.
この様にして製造した素子のソース電極とドレイン電極
間の電流制御は、ゲート電圧の印加で行うことが可能で
ある。以上のごとくにして、電界効果トランジスタを製
造することが可能となることが判明した。以下、実施例
をもとにして本発明の詳細な説明する。Current control between the source electrode and drain electrode of the device manufactured in this way can be performed by applying a gate voltage. It has been found that it is possible to manufacture a field effect transistor in the manner described above. Hereinafter, the present invention will be explained in detail based on examples.
（実施例１）
絶縁基板１としてガラス基板を用い、アルミニウムを蒸
着し、次に公知のホトリソグラフ法でパターンニングし
、ゲート長１０μｍ 、ゲート幅２Ｈのゲート電極を形
成した。次に、ゲート電極２上に絶縁膜３として、電子
ビーム蒸着法で酸化珪素膜を５００オングストローム形
成した。次に、絶縁膜３上に金からなるソース電極６及
びドレーン電極６を形成した。(Example 1) A glass substrate was used as the insulating substrate 1, and aluminum was vapor-deposited and then patterned by a known photolithography method to form a gate electrode having a gate length of 10 μm and a gate width of 2H. Next, a silicon oxide film having a thickness of 500 angstroms was formed as an insulating film 3 on the gate electrode 2 by electron beam evaporation. Next, a source electrode 6 and a drain electrode 6 made of gold were formed on the insulating film 3.
次に、フタロシアニンの８置換体の１．５Ｘ１０’Ｍｏ
ｌアセトニトリル溶液をソース電極６とドレーン電極６
間に滴下し乾燥した。Next, 1.5X10'Mo of 8-substituted phthalocyanine
1. Apply acetonitrile solution to the source electrode 6 and drain electrode 6.
It was dripped in between and dried.
このようにして、製造した素子の特性を第２図に示す。The characteristics of the device manufactured in this way are shown in FIG.
第２図からゲート電圧でソースとトレー／間の電流を制
御し得うるスイッチング素子であることがわかる。すな
わち、電界効果トランジスタが製造されたことを示す。It can be seen from FIG. 2 that this is a switching element that can control the current between the source and the tray by controlling the gate voltage. That is, it indicates that a field effect transistor has been manufactured.
（実施例２）
実施例１と同様の構成で用いる有機化合物を、ポリフィ
リンの８置換本にかえて素子を製造した。(Example 2) A device was manufactured in the same manner as in Example 1 except that the organic compound used was replaced with 8-substituted porphyrin.
こうして得られた素子も、実施例１と同様の効果を示し
た。The device thus obtained also exhibited the same effects as in Example 1.
発明の効果
本発明によれば、高価な蒸着装置を用いることなく大面
積基板に均一に、高歩留シに、トランジスタを形成する
ことが可能である。大型の壁掛はテレビや大面積のイメ
ージセンサ−などのスイッチング素子を集積する素子の
製造などに有効である。この半導体層はＭＩＳ構造のダ
イオードなどにも有効であることは自明である。Effects of the Invention According to the present invention, it is possible to uniformly form transistors on a large-area substrate at a high yield without using expensive vapor deposition equipment. Large wall hangings are effective for manufacturing elements that integrate switching elements such as televisions and large-area image sensors. It is obvious that this semiconductor layer is also effective for diodes of MIS structure.
第１図は本発明の一実施例の電界効果トランジスタ素子
の断面図、第２図は同電界効果トランジスタの出力特性
図である。
１・・・・・・絶縁基板、２・・・・・・ゲート電極、
３・・・・−・絶縁膜、４・・・・・・有機化合物膜、
６・・・・・・ソース電極、６・・・・・・ドレーン電
極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
ＶＧ （Ｖ）FIG. 1 is a sectional view of a field effect transistor element according to an embodiment of the present invention, and FIG. 2 is an output characteristic diagram of the same field effect transistor. 1...Insulating substrate, 2...Gate electrode,
3...--Insulating film, 4... Organic compound film,
6... Source electrode, 6... Drain electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 VG (V)
Claims (2)
なる電極系と、板状低分子の有機化合物からなる半導体
層と、前記ゲート電極と前記半導体層間に設けた絶縁膜
を具備することを特徴とする電界効果トランジスタ。(1) An electrode system consisting of a gate electrode, a source electrode, and a drain electrode, a semiconductor layer made of a plate-shaped low-molecular organic compound, and an insulating film provided between the gate electrode and the semiconductor layer. field effect transistor.
相をしめす化合物からなることを特徴とする請求項１に
記載の電界効果トランジスタ。(2) The field effect transistor according to claim 1, wherein the plate-like low-molecular organic compound comprises a compound exhibiting a discotic liquid crystal phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63014926A JPH01189965A (en) | 1988-01-26 | 1988-01-26 | Field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63014926A JPH01189965A (en) | 1988-01-26 | 1988-01-26 | Field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01189965A true JPH01189965A (en) | 1989-07-31 |
Family
ID=11874569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63014926A Pending JPH01189965A (en) | 1988-01-26 | 1988-01-26 | Field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01189965A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996036082A1 (en) * | 1995-05-13 | 1996-11-14 | The University Of Leeds | Electronic devices based on discotic liquid crystals |
| US7193237B2 (en) | 2002-03-27 | 2007-03-20 | Mitsubishi Chemical Corporation | Organic semiconductor material and organic electronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206259A (en) * | 1985-03-09 | 1986-09-12 | Rikagaku Kenkyusho | Msm or mis type element using phthalocyanine derivative thin-film as semiconductor layer and manufacture thereof |
-
1988
- 1988-01-26 JP JP63014926A patent/JPH01189965A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61206259A (en) * | 1985-03-09 | 1986-09-12 | Rikagaku Kenkyusho | Msm or mis type element using phthalocyanine derivative thin-film as semiconductor layer and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996036082A1 (en) * | 1995-05-13 | 1996-11-14 | The University Of Leeds | Electronic devices based on discotic liquid crystals |
| US7193237B2 (en) | 2002-03-27 | 2007-03-20 | Mitsubishi Chemical Corporation | Organic semiconductor material and organic electronic device |
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