JPH01187989A - Semiconductor laser and manufacture thereof - Google Patents
Semiconductor laser and manufacture thereofInfo
- Publication number
- JPH01187989A JPH01187989A JP63012863A JP1286388A JPH01187989A JP H01187989 A JPH01187989 A JP H01187989A JP 63012863 A JP63012863 A JP 63012863A JP 1286388 A JP1286388 A JP 1286388A JP H01187989 A JPH01187989 A JP H01187989A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- contact layer
- junction
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 229910000679 solder Inorganic materials 0.000 abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 239000002019 doping agent Substances 0.000 abstract description 3
- 238000005253 cladding Methods 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/2209—GaInP based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、高出力動作に不可欠のジャンクションダウ
ン組立が可能な半導体レーザおよびその製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser capable of junction-down assembly, which is essential for high-output operation, and a method for manufacturing the same.
第４図は、例えばＥｌｅｃｔｒｏｎｉｃｓ、Ｌｅｔｔｅ
ｒｓ ２６ｔｈＳｅｐｔ、１９８５ Ｐ、９０３に記載
されたり、Ｊ、ＭＡＷＳＴ ｅｔ ａｌによる半導体レ
ーザを示す図であり、この図において、１はｎ型（以下
ｎ−と略す）ＧａＡｓからなる基板、２は前記基板１上
に設けられたｎ−ＧａＡｓからなるバッファ層、３は前
記バッファ層２上に設けられたｎ Ａ Ｊ２ ｏ、
６０Ｇ ａ ｏ４ｏＡ Ｓからなる第１クラッド層、４
は前記第１クラッド層３上に設けられた真性（以下ｉ−
と略す）ＧａＡｓからなる活性層、５は前記活性層４上
に設けられたｐ型（以下ｐ−と略す） ＡＪ２ｏ、ａｏ
Ｇａｏ４゜Ａｓからなる第２クラッド層で、ストライブ
状のリッジ部分８を有している。６はｐ −Ｇ ａ Ａ
ｓ ｈ）らなるコンタクト層で、第２クラッド層５の
ストライブ状のリッジ部分８上に設けられている。７は
ｎ−ＧａＡｓからなる電流阻止層で、第２クラッド層５
のストライブ状のリッジ部分８以外の領域上に設けられ
ている。FIG. 4 shows, for example, Electronics, Lette
rs 26thSept, 1985 P, 903 or by J. MAWST et al. In this figure, 1 is a substrate made of n-type (hereinafter abbreviated as n-) GaAs, and 2 is the substrate. 1 is a buffer layer made of n-GaAs provided on the buffer layer 2; 3 is an n A J2 o provided on the buffer layer 2;
A first cladding layer consisting of 60G ao4oA S, 4
is an intrinsic layer provided on the first cladding layer 3 (hereinafter referred to as i-
5 is a p-type (hereinafter abbreviated as p-) provided on the active layer 4 AJ2o, ao
The second cladding layer is made of Gao4°As and has a striped ridge portion 8. 6 is p-G a A
A contact layer consisting of s h) is provided on the striped ridge portion 8 of the second cladding layer 5 . 7 is a current blocking layer made of n-GaAs, and the second cladding layer 5
It is provided on a region other than the stripe-shaped ridge portion 8.
また、第５図は、第４図に示した半導体レーザをジャン
クショ・ンダウン組立した様子を示す断面図であり、こ
の図において、第４図と同一符号は同一のものを示し、
９はＳｉやダイヤモンド等で作られたサブマウント、１
０はダイボンド用のはんだ材である。Further, FIG. 5 is a cross-sectional view showing the state in which the semiconductor laser shown in FIG. 4 is assembled in a junction-down manner. In this figure, the same reference numerals as in FIG. 4 indicate the same parts,
9 is a submount made of Si, diamond, etc., 1
0 is a solder material for die bonding.
次に動作について説明する。Next, the operation will be explained.
コンタクト層６と基板１の間にコンタクト層６が正とな
るようなバイアスを印加すると、ストライブ状のリッジ
部分８以外の領域においては、コンタクト層６、電流阻
止層７、第２クラッド層５によるｐｎｐ接合かあるため
に電流は流れず、ストライブ状のりッシ部分８のみに電
流が流れる。When a bias is applied between the contact layer 6 and the substrate 1 so that the contact layer 6 becomes positive, the contact layer 6, the current blocking layer 7, and the second cladding layer 5 are removed in the region other than the striped ridge portion 8. Since there is a pnp junction, current does not flow, and current flows only through the striped ridge portion 8.
この電流の経路は第４図中に矢印で示しである。The path of this current is indicated by an arrow in FIG.
電流が流れることにより活性層４内に注入された電子お
よび正孔は再結合して光を輻射し、電流を大きくしてい
くと光の誘導放出が始まり、やがてレーザ発振に至る。As the current flows, electrons and holes injected into the active layer 4 recombine to radiate light, and as the current increases, stimulated emission of light begins, eventually leading to laser oscillation.
レーザ光は素子の上下方向では活性層４と第１クラッド
層３および第２クラッド層５の間の実屈折率差により効
率良く活性層４近傍に閉じ込められ、また、素子の左右
方向では、レーザ光に対して吸収係数の大きな電流阻止
層７か存在することによるロスガイド型の導波機構によ
りストライブ状のリッジ部分８の直下に閉じ込められる
。The laser light is efficiently confined near the active layer 4 in the vertical direction of the device due to the real refractive index difference between the active layer 4 and the first cladding layer 3 and the second cladding layer 5, and in the horizontal direction of the device, the laser light is confined in the vicinity of the active layer 4. The light is confined directly under the striped ridge portion 8 due to the loss guide type waveguide mechanism due to the presence of the current blocking layer 7 having a large absorption coefficient for light.
（発明が解決しようとする課題）
上記のような従来の半導体レーザは、高出力動作を目的
として発熱を小さくするために、いわゆるジャンクショ
ンダウン組立を行うと、第５図に示すような組立用のは
んだ材１０のもつあがりによりコンタクト層６と基板１
あるいはバッファ層２あるいは第１クラッド層３がショ
ートしてしまい、装置が動作しなくなるという問題点が
あった。(Problem to be Solved by the Invention) When the conventional semiconductor laser as described above is assembled by so-called junction down assembly in order to reduce heat generation for the purpose of high-output operation, the assembly as shown in FIG. The contact layer 6 and the substrate 1 are bonded together by the rising of the solder material 10.
Alternatively, there is a problem in that the buffer layer 2 or the first cladding layer 3 is short-circuited, and the device becomes inoperable.
一般に、はんだ材１０の量を適正化すると、このもつあ
がりは小さくすることができるが、１〜２μｍ程度のも
つあがりは適正化しても避けることが困難である。Generally, by optimizing the amount of solder material 10, this bulging can be reduced, but it is difficult to avoid bulging of about 1 to 2 μm even if the amount of solder material 10 is optimized.
この発明は、かかる課題を解決するためになされたもの
で、ジャンクションダウン組立を行ってもショートが発
生しない半導体レーザおよびその製造方法を得ることを
目的とする。The present invention has been made in order to solve this problem, and an object of the present invention is to provide a semiconductor laser that does not cause short circuits even when junction-down assembly is performed, and a method for manufacturing the same.
この発明に係る半導体レーザは、コンタクト層の厚さを
２μｍ以上としたものである。In the semiconductor laser according to the present invention, the contact layer has a thickness of 2 μm or more.
また、この発明に係る半導体レーザの製造方法は、コン
タクト層を有機金属の熱分解法により形成するものであ
る。Further, in the method for manufacturing a semiconductor laser according to the present invention, the contact layer is formed by an organic metal thermal decomposition method.
この発明の半導体レーザにおいては、装置をサブマウン
ト等にジャンクションダウンに組立てる際に発生するダ
イボンド用はんだ材のもつあがりがコンタクト層以外の
各層に接することがなくなる。In the semiconductor laser of the present invention, the bulge of the die-bonding solder material that occurs when the device is assembled to a submount or the like in a junction-down manner does not come into contact with any layer other than the contact layer.
また、この発明の半導体レーザの製造方法においては、
表面状態が良好で、高濃度のコンタクト層を２μｍ以上
の厚さで形成することが可能になる。Further, in the method for manufacturing a semiconductor laser of the present invention,
It becomes possible to form a highly concentrated contact layer with a thickness of 2 μm or more with a good surface condition.
〔実施例） 以下、この発明の一実施例を図面について説明する。〔Example) An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の半導体レーザの一実施例を示す断面
図であり、この図において、第４図と同一符号は同一の
ものを示し、６０は厚さ２μｍ以上のｐ−ＧａＡｓから
なるコンタクト層で、第２クラッド層５のストライブ状
のリッジ部分８および電流阻止層７上に設けられている
。１１はｐ側電極、１２はｎ側電極である。FIG. 1 is a cross-sectional view showing an embodiment of the semiconductor laser of the present invention. In this figure, the same reference numerals as in FIG. This layer is provided on the striped ridge portion 8 of the second cladding layer 5 and the current blocking layer 7 . 11 is a p-side electrode, and 12 is an n-side electrode.
また、第２図は、第１図に示した半導体レーザをジャン
クションダウン組立した様子を示す断面図である。Further, FIG. 2 is a cross-sectional view showing how the semiconductor laser shown in FIG. 1 is assembled in a junction-down manner.
次に動作について説明する。Next, the operation will be explained.
この発明の半導体レーザにおいても、ｐ ＩＩＪ Ｚ極
１１とｎ側電極１２の間にｐ側電極１１が正となるよう
なバイアスを印加すると、ストライブ状のリッジ部分８
以外の領域においてはコンタクト層６０、電流阻止層７
、第２クラッド層５によるｐｎｐ接合が存在するために
電流は流れず、ストライブ状のリッジ部分８のみに流れ
る。この電流の経路は第１図中に矢印で示しである。電
流が流れることにより活性層４内に注入された電子およ
び正孔は再結合して光を輻射し、電流を大きくしていく
と、光の誘導放出が始まり、やがてレーザ発振に至る。Also in the semiconductor laser of the present invention, when a bias is applied between the p IIJ Z pole 11 and the n side electrode 12 so that the p side electrode 11 becomes positive, the striped ridge portion 8
In other regions, the contact layer 60 and the current blocking layer 7
, because of the presence of the pnp junction formed by the second cladding layer 5, no current flows, but only in the striped ridge portion 8. The path of this current is indicated by an arrow in FIG. Electrons and holes injected into the active layer 4 as a result of current flow recombine to radiate light, and as the current increases, stimulated emission of light begins, eventually leading to laser oscillation.
ところで、放熱を改良して高出力動作させるためには、
第２図に示すように、ジャンクションダウン方式で組立
てる必要があるが、この発明の半導体レーザはコンタク
ト層６０を２μｍ以上としているので、ジャンクション
ダウン組立を施す際に、サブマウント９と素子を接着す
るダイボンド用のはんだ材１０が素子の端でもつあがっ
ても、ショートの発生を抑えることができる。By the way, in order to improve heat dissipation and operate at high output,
As shown in FIG. 2, it is necessary to assemble the semiconductor laser using the junction-down method, but since the semiconductor laser of the present invention has a contact layer 60 of 2 μm or more, the submount 9 and the device must be bonded together when performing the junction-down assembly. Even if the solder material 10 for die bonding rises at the ends of the element, it is possible to suppress the occurrence of short circuits.
また、第４図に示したような従来の半導体レーザではコ
ンタクト層６を成長中のドーピングによりそのキャリア
密度をｆ Ｘ ｆ ０１９ｃｍ−３以上としているが、
本発明者等の実験によると、ｐ側電極１１としてＴ ｉ
／ Ａ ｕ電極を用いた場合、コンタクト層６０のキ
ャリア密度が４ｘ １０” ｃｍ”−３以上であれは実
用上問題がないことがわかった。Further, in the conventional semiconductor laser shown in FIG. 4, the carrier density of the contact layer 6 is set to be f x f 019 cm-3 or more by doping during growth.
According to experiments by the present inventors, as the p-side electrode 11, T i
/Au electrode, it was found that there is no practical problem as long as the carrier density of the contact layer 60 is 4 x 10"cm"-3 or more.
次に、第１図に示した半導体レーザの製造方法を第３図
（ａ）〜（Ｃ）を参照して説明する。Next, a method for manufacturing the semiconductor laser shown in FIG. 1 will be explained with reference to FIGS. 3(a) to 3(C).
まず、基板上１に第１回目のＭＯＣＶＤ法による結晶成
長でバッファ層２．第１クラッド層３、活性層４、第２
クラッド層５、コンタクト層６゜の一部６０ａを順次エ
ピタキシャル成長させる（第３図（ａ））。First, a buffer layer 2 is grown on a substrate 1 by the first MOCVD method. First cladding layer 3, active layer 4, second
The cladding layer 5 and a portion 60a of the contact layer 6° are epitaxially grown in sequence (FIG. 3(a)).
次に、ウェハ上の全面にＳｉ３Ｎ４膜１３を成長させ、
写真製版技術およびドライエツチング技術を用いて、Ｓ
ｉ３Ｎ４膜１３をストライブ状に成形する。この後、こ
のストライブ状の８１３Ｎ４膜１３をエツチングマスク
として、第２クラッド層５のなかばまで硫酸系のエツチ
ング液等を用いてエツチングし、ストライブ状のリッジ
部分８を形成する（第３図（ｂ））。Next, a Si3N4 film 13 is grown on the entire surface of the wafer,
Using photolithography technology and dry etching technology, S
The i3N4 film 13 is formed into a stripe shape. Thereafter, using the striped 813N4 film 13 as an etching mask, the second cladding layer 5 is etched halfway up to the middle using a sulfuric acid-based etching solution to form a striped ridge portion 8 (Fig. 3). (b)).
次に、第２回目のＭＯＣＶＤ法による結晶成長でストラ
イブ状のリッジ部分８上を除いて電流阻止層７を成長さ
せる（第３図（Ｃ））。Next, in a second crystal growth process using the MOCVD method, the current blocking layer 7 is grown except on the striped ridge portion 8 (FIG. 3(C)).
次に、ウニ八表面のストライブ状のＳｉ３Ｎ４膜１３を
ＨＦなどにより除去した後、３回目のＭＯＣＶＤ法によ
る結晶成長でコンタクト層６０を成長させ、さらに、ｐ
側電極１１およびｎ側電極１２を形成すれば第１図に示
した半導体レーザが得られる。一般にレーザの製作に用
いられている液相成長法においては、ｐ型のドーパント
を高濃度にドーピングすることは困難であり、また、表
面状態も悪化することが知られている。これに対して、
この発明のように第３回目のＭＯＣＶＤ法によるコンタ
クト層６０の成長において、ｐ型ドーパントとしてジメ
チルジンク（以下、ＤＭＺｎと略す）を用い、Ｇａ源と
してトリメチルガリウム（以下ＴＭＧと略す）を用いた
場合、容易に４ｘ １０１８ｃｍ−３以上のドーピング
を行うことができ、また、平坦性の良好な表面を得るこ
とが可能である。Next, after removing the striped Si3N4 film 13 on the surface of the sea urchin eight using HF or the like, the contact layer 60 is grown by the third MOCVD method, and then the p
By forming the side electrode 11 and the n-side electrode 12, the semiconductor laser shown in FIG. 1 can be obtained. In the liquid phase growth method generally used for manufacturing lasers, it is difficult to dope a p-type dopant at a high concentration, and it is also known that the surface condition deteriorates. On the contrary,
When the contact layer 60 is grown by the third MOCVD method as in this invention, dimethyl zinc (hereinafter abbreviated as DMZn) is used as a p-type dopant and trimethyl gallium (hereinafter abbreviated as TMG) is used as a Ga source. , it is possible to easily perform doping of 4×10 18 cm −3 or more, and to obtain a surface with good flatness.
この発明の半導体レーザは以上説明したとおり、コンタ
クト層の厚さを２μｍ以上としたので、ダイボンド用は
んだ材のもつあがりによるショートを発生させることな
く、ジャンクションダウン組立を行うことができ、高出
力化が可能になるという効果がある。As explained above, in the semiconductor laser of the present invention, since the contact layer has a thickness of 2 μm or more, junction-down assembly can be performed without causing short circuits due to the swelling of the die-bonding solder material, and high output can be achieved. This has the effect of making it possible.
また、この発明の半導体レーザの製造方法は、コンタク
ト層を有機金属の熱分解法により形成するので、表面状
態が良好で、４ｘ １０１６ｃｍ−３以上のキャリア濃
度のコンタクト層を２μｍ以上の厚さで容易に形成する
ことができ、上記発明の半導体レーザを容易に得ること
ができるという効果がある。In addition, in the method for manufacturing a semiconductor laser of the present invention, the contact layer is formed by an organic metal thermal decomposition method, so that the contact layer has a good surface condition and has a carrier concentration of 4 x 1016 cm-3 or more and a thickness of 2 μm or more. This has the advantage that it can be easily formed and the semiconductor laser of the above invention can be easily obtained.
第１図はこの発明の半導体レーザの一実施例を示す断面
図、第２図は、第１図に示した半導体レーザをジャンク
ションダウン組立した様子を示す断面図、第３図はこの
発明の半導体レーザの製造方法の一実施例を説明するた
めの断面図、第４図は従来の半導体レーザを示す断面図
、第５図は従来の半導体レーザをジャンクションダウン
組立した様子を示す断面図である。
図において、１は基板、２はバッファ層、３は第１クラ
ッド層、４は活性層、５は第２クラッド層、７は電流阻
止層、９はサブマウント、１０はぽんだ材、６０はコン
タクト層、６０ａはコンタクト層の一部である。
なお、各図中の同一符号は同一または相当部分を示す。
第１図
６０ コンタクト層
第２図
第３図
第３図（Ｃ）
第４図
第５図
手続補正書（自発）
（ｉ３ ：； ”５
昭和 年 月 日FIG. 1 is a sectional view showing an embodiment of the semiconductor laser of the present invention, FIG. 2 is a sectional view showing the semiconductor laser shown in FIG. FIG. 4 is a cross-sectional view showing a conventional semiconductor laser; FIG. 5 is a cross-sectional view showing a conventional semiconductor laser assembled in a junction-down manner. In the figure, 1 is a substrate, 2 is a buffer layer, 3 is a first cladding layer, 4 is an active layer, 5 is a second cladding layer, 7 is a current blocking layer, 9 is a submount, 10 is a popper material, and 60 is a The contact layer 60a is part of the contact layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Fig. 1 60 Contact layer Fig. 2 Fig. 3 Fig. 3 (C) Fig. 4 Fig. 5 Procedural amendment (voluntary) (i3:; ”5 Showa year, month, day
Claims (2)
ト層上にそれぞれｐ、ｎの電極を有する半導体レーザに
おいて、前記コンタクト層の厚さを２μｍ以上としたこ
とを特徴とする半導体レーザ。(1) A semiconductor laser having p and n electrodes on a substrate and a contact layer provided on the opposite side of the substrate, wherein the contact layer has a thickness of 2 μm or more.
ることを特徴とする請求項（１）記載の半導体レーザの
製造方法。(2) The method for manufacturing a semiconductor laser according to claim (1), wherein the contact layer is formed by an organic metal thermal decomposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63012863A JPH01187989A (en) | 1988-01-22 | 1988-01-22 | Semiconductor laser and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63012863A JPH01187989A (en) | 1988-01-22 | 1988-01-22 | Semiconductor laser and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01187989A true JPH01187989A (en) | 1989-07-27 |
Family
ID=11817251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63012863A Pending JPH01187989A (en) | 1988-01-22 | 1988-01-22 | Semiconductor laser and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01187989A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62200786A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
-
1988
- 1988-01-22 JP JP63012863A patent/JPH01187989A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62200786A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
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