JPH01184965A - Reflection type photosensor - Google Patents

Reflection type photosensor

Info

Publication number
JPH01184965A
JPH01184965A JP63010243A JP1024388A JPH01184965A JP H01184965 A JPH01184965 A JP H01184965A JP 63010243 A JP63010243 A JP 63010243A JP 1024388 A JP1024388 A JP 1024388A JP H01184965 A JPH01184965 A JP H01184965A
Authority
JP
Japan
Prior art keywords
light
substrate
detected
reflected
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63010243A
Other languages
Japanese (ja)
Inventor
Satoru Murakami
悟 村上
Keiichi Yoshida
恵一 吉田
Yoshinori Yamaguchi
美則 山口
Takehisa Nakayama
中山 威久
Yoshihisa Owada
善久 太和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP63010243A priority Critical patent/JPH01184965A/en
Publication of JPH01184965A publication Critical patent/JPH01184965A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable the reading of code-patterned data marked on an object by a method wherein a light-emitting body, so designed that its emission will pass through a transparent substrate, and a plurality of photodetecting elements, so designed as to receive the light emitted by the light-emitting body and then reflected by the object to be read, are provided. CONSTITUTION:Light emitted by an LED 7 goes into a substrate 1 at a window 1c provided in its surface 1a, and lands on an object 6 to be read after passing through the substrate 1. The quantity of light to be reflected from the surface of the object 6 is different when the data pattern on the surface of the object 6 is different. The reflected light come backs to the surface 1b of the substrate 1, travels through the substrate 1, and arrives at photodetecting elements 5. The light received by the photodetecting elements 5 further proceeds through a transparent electrode 2 before landing on a photoelectric semiconductor 3. The photoelectric semiconductor 3 generates a current with its quantity dependent upon the quantity of light received, and the current is outputted at the transparent electrode 2 and a metal electrode 4. Accordingly, data on the object 6 may be determined by measuring the electric power from the photodetecting elements 5.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、反射型ホトセンサに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a reflective photosensor.

[従来例] 第7図において、lOは従来の反射型ホトセンサのケー
シングである。ケーシングlOは楕円状の形状を有し、
ケーシングIOの表面10aには、有底な長手方向に長
い半楕円状の穴10bが2個ケーシング10の長手方向
中心軸上に離れて形成される。二つの穴tabの内、一
つにはL−ED7が、他方の穴10bにはホトトランジ
スタにてなるホトセンサ11が、それぞれの穴lObの
底面10cのほぼ中央部に一つずつ設置されている。
[Conventional Example] In FIG. 7, lO is a casing of a conventional reflective photosensor. The casing lO has an elliptical shape,
On the surface 10a of the casing IO, two semi-elliptical holes 10b each having a bottom and long in the longitudinal direction are formed apart from each other on the longitudinal center axis of the casing 10. Of the two holes tab, an L-ED7 is installed in one hole 10b, and a photosensor 11 made of a phototransistor is installed in the other hole 10b, one each at approximately the center of the bottom surface 10c of each hole lOb. .

さらに、ケーシング10の表面10aと平行にそして適
宜な間隔を有し被検出物6が設置される。
Further, an object to be detected 6 is installed parallel to the surface 10a of the casing 10 and at an appropriate interval.

上述のような従来の反射型ホトセンサにおいて、LED
7より発した光は被検出物6にて被検出物6に示された
データに応じて反射し、反射した光はホトセンサ11に
て受光される。ホトセンサ11は受光することで電流を
発生し、この電流を検出することで、被検出物6に表示
されているコードパターンなどのデータを検出するらの
である。
In the conventional reflective photosensor as mentioned above, the LED
The light emitted from the detection object 7 is reflected by the detection object 6 according to the data shown on the detection object 6, and the reflected light is received by the photosensor 11. The photosensor 11 generates a current when it receives light, and by detecting this current, data such as a code pattern displayed on the object 6 to be detected is detected.

[発明が解決しようとする課題] ところが、従来の反射型ホトセンサは、1対のL E 
Dとホトセンサを分離させ1個の反射型ホトセンサを形
成するため、センサとして形状が大きくなり高密度なデ
ータを検出することができないという問題点があり、さ
らに、1対のLEDとホトセンサでは一つのデータしか
検出できず、複数のデータを検出するためには、複数の
L E Dを必要とする問題点があった。
[Problems to be Solved by the Invention] However, in the conventional reflective photosensor, a pair of L E
Since D and the photo sensor are separated to form one reflection type photo sensor, there is a problem that the size of the sensor becomes large and it is not possible to detect high-density data. There is a problem that only data can be detected, and in order to detect a plurality of data, a plurality of LEDs are required.

本発明は上述した問題点を解決するためになされたもの
で、一つの発光体にて、被検出物に表示されているコー
ドや種々のパターンの複数のデータ及び高密度なデータ
を検出することができる反射型ホトセンサを提供するこ
とを目的とする。
The present invention has been made to solve the above-mentioned problems, and it is possible to detect codes displayed on an object to be detected, multiple pieces of data in various patterns, and high-density data using a single light emitting body. The purpose of this invention is to provide a reflective photosensor that can.

[課題を解決するための手段] 本発明は、透明な基板と1.この透明な基板を光が透過
するように設けた一つの発光体と、前記基板に設けられ
、この発光体から発した光が被検出物にて反射した反射
光を受光する複数の受光素子とを備えたことを特徴とす
る。
[Means for Solving the Problems] The present invention provides a transparent substrate and 1. One light emitting body provided so that light passes through the transparent substrate, and a plurality of light receiving elements provided on the substrate to receive reflected light emitted from the light emitting body and reflected by an object to be detected. It is characterized by having the following.

[作用] 一つの発光源から発した光は、透明な基板を透過し被検
出物に達し被検出物にて反射する。この反射光の光量は
被検出物に表示されているコードやパターンについての
データに対応して種々存在し、これらの反射光は前記基
板表面に設けられた複数の受光素子にて受光素される。
[Operation] Light emitted from one light emitting source passes through a transparent substrate, reaches an object to be detected, and is reflected by the object. The amount of this reflected light varies depending on the data about the code or pattern displayed on the object to be detected, and this reflected light is received by a plurality of light receiving elements provided on the surface of the substrate. .

受光素子は、受光した光量に応じた電流を発生し、この
電流を測定することで被検出物に表示されているコード
パターンについてのデー・夕が検出される。
The light-receiving element generates a current according to the amount of light it receives, and by measuring this current, the date and time of the code pattern displayed on the object to be detected is detected.

[実施例] 第1の実施例 第1図から第6図において、■はガラス等の透明な材料
にてなる本発明の反射型ホトセンサの基板である。基板
lの上表面にはITO(インジウム−すず酸化物)もし
くは5nOt等にてなるTCOの透明電極2が形成され
る。透明電極2の上表面には非晶質シリコンにてなる光
半導体3が形成される。光半導体3の上表面にはクロミ
ウムもしくはアルミニウム等にてなる金属電極4が形成
され、上述の構成物2.3.4にて受光素子5が形成さ
れる。
[Embodiment] In the first embodiment of FIGS. 1 to 6, symbol 2 is a substrate of a reflective photosensor of the present invention made of a transparent material such as glass. A TCO transparent electrode 2 made of ITO (indium-tin oxide), 5nOt, or the like is formed on the upper surface of the substrate l. An optical semiconductor 3 made of amorphous silicon is formed on the upper surface of the transparent electrode 2. A metal electrode 4 made of chromium, aluminum, or the like is formed on the upper surface of the optical semiconductor 3, and a light receiving element 5 is formed with the above-mentioned structure 2.3.4.

第2図は上述した構成にてなる受光素子5を複数個使用
した本発明の一実施例を示したもので、基板1は一辺が
4y、11、厚さがl 、 l amにてなる方形状で
あり、基板!上には、基板1の表面を4等分するように
区切られる4つの部分に概略方形状でかつ基板中心部分
が円弧状に形成されてなる4個の受光素子5がギャップ
ldを介してカソード、アーノードの少なくとも一方が
電気的に絶縁されて設けられる。さらに詳しくは後述の
LED7の発する光が透過可能なように基板1の中央部
には受光素子5が形成されていない円形の窓1cが形成
されている。尚、各受光素子の有効受光面積は!、ix
2である。さらに、基板lの受光素子5が形成されてい
る上表面1aの窓1cには、上表面1aに発光部を近接
させ、波長660nmの赤色光を発するLED7が1個
設けられる。又、基板lの表面lb側には、表面1bと
間隔をおいて被検出物6が基板lと平行に設置される。
FIG. 2 shows an embodiment of the present invention in which a plurality of light-receiving elements 5 having the above-mentioned configuration are used. The shape and the substrate! Above, four light-receiving elements 5 each having a generally rectangular shape and an arc shape in the center of the substrate are divided into four parts dividing the surface of the substrate 1 into four parts, and are connected to the cathode through a gap ld. , at least one of the anodes is electrically insulated. More specifically, a circular window 1c, in which the light-receiving element 5 is not formed, is formed in the center of the substrate 1 so that light emitted by an LED 7, which will be described later, can pass therethrough. Furthermore, the effective light-receiving area of each light-receiving element is! ,ix
It is 2. Further, in the window 1c of the upper surface 1a where the light receiving element 5 of the substrate 1 is formed, one LED 7, which emits red light with a wavelength of 660 nm, is provided with a light emitting part close to the upper surface 1a. Further, on the surface lb side of the substrate 1, a detection object 6 is installed parallel to the substrate 1 with a distance from the surface 1b.

上述のように構成された反射型ホトセンサにおいて、L
ED7より発した光は基板1の上表面1aの窓1cより
基板1に入射し、基板lを透過し被検出物6に達する。
In the reflective photosensor configured as described above, L
The light emitted from the ED 7 enters the substrate 1 through the window 1c on the upper surface 1a of the substrate 1, passes through the substrate 1, and reaches the object to be detected 6.

被検出物6にて光は被検出物6の表面上に示されるパタ
ーンデータの光の反射率の違いにより被検出物6のデー
タに応じた異なった光量が反射され、種々の光量の反射
光は再び基板lの表面1bに入射し基板lを透過し各受
光素子5に達する。各受光素子5に達した光は、基板I
上の透明電極2を透過し光半導体3に入射する。
Different amounts of light are reflected from the object to be detected 6 depending on the data of the object to be detected 6 due to the difference in the reflectance of the light of the pattern data shown on the surface of the object to be detected. The light enters the surface 1b of the substrate l again, passes through the substrate l, and reaches each light receiving element 5. The light reaching each light receiving element 5 is
The light passes through the upper transparent electrode 2 and enters the optical semiconductor 3.

光半導体3は、入射した光量に応じて電流を発生し、発
生した電流は透明電極2及び金属電極4より出力される
。従って、各受光素子5より得られる電力を測定するこ
とで、被検出物6のデータを検出することができる。
The optical semiconductor 3 generates a current according to the amount of incident light, and the generated current is output from the transparent electrode 2 and the metal electrode 4. Therefore, by measuring the power obtained from each light receiving element 5, data on the object to be detected 6 can be detected.

例えば、上述した反射型ホトセンサを用い、第3図に示
す被検出物を検出された場合、被検出物の白色部は、黒
色部に比べ光の反射率が大きいので、例えば、第2図(
a)に示す受光素子5−1及び5−2は、受光素子5−
3.5−4に比べ受光量が多い。従って、発生する電流
も大きくなる。
For example, when the above-mentioned reflective photosensor is used to detect the object shown in Figure 3, the white part of the object has a higher light reflectance than the black part.
The light receiving elements 5-1 and 5-2 shown in a) are the light receiving elements 5-
The amount of light received is greater than 3.5-4. Therefore, the generated current also increases.

このようにセンサに設置された受光素子の位置とその発
生ずる電流より被検出物に示されるデータを検出するこ
とができる。具体的に発生した電流は、白色部で0.2
μA、黒色部で002μAの電流が各受光素子より得ら
れ、白黒比は20dBの良い結果が得られた。
In this way, data indicated by the object to be detected can be detected from the position of the light receiving element installed in the sensor and the current generated by the light receiving element. Specifically, the generated current is 0.2 in the white part.
A current of 0.002 μA was obtained from each light-receiving element in the black area, and a good black-white ratio of 20 dB was obtained.

第4図は、第1の実施例の変形例であり、本反射型ホト
センサは方形状の基板lの各対辺を等分する線及び対角
線にて区切られる8箇所に、三角形状の受光素子5が電
気的に絶縁されて配置したしのである。この反射型ホト
センサは、先の反射型ホトセンサに比べ受光素子が多い
ため、より複雑なデータを検出することができる。
FIG. 4 shows a modification of the first embodiment, and the present reflective photosensor has triangular light-receiving elements 5 at eight locations divided by lines and diagonal lines that equally divide each opposite side of a rectangular substrate l. are placed in an electrically insulated manner. This reflective photosensor has more light-receiving elements than the previous reflective photosensor, so it can detect more complex data.

第2実施例 第2の実施例は、被検出物を反射した光が直接受光素子
に入射するように被検出物側の基板表面に受光素子を設
けたものである。従って、基板lの表面Ib上には金属
電極4が形成され、金属電極4の上表面には光半導体3
が、光半導体3の上表面には透明電極2が形成される。
Second Embodiment In the second embodiment, a light receiving element is provided on the substrate surface on the side of the detected object so that the light reflected from the detected object is directly incident on the light receiving element. Therefore, a metal electrode 4 is formed on the surface Ib of the substrate l, and an optical semiconductor 3 is formed on the upper surface of the metal electrode 4.
However, a transparent electrode 2 is formed on the upper surface of the optical semiconductor 3.

上述のように構成された反射型ホトセンサにおいて、基
板Iの表面la側よりLED等より発した光は、基板l
を透過し、被検出物6に達し反射する。被検出物6にて
反射した光は、透明電極2を透過し光半導体3に入射す
る。反射光は光半導体3にて電流に変換され、生じた電
力は透明電極2及び金属電極4より出力される。
In the reflective photosensor configured as described above, light emitted from an LED or the like from the surface la side of the substrate I is
, reaches the object to be detected 6 and is reflected. The light reflected by the object to be detected 6 passes through the transparent electrode 2 and enters the optical semiconductor 3. The reflected light is converted into a current by the optical semiconductor 3, and the generated power is output from the transparent electrode 2 and the metal electrode 4.

上述のように本実施例では被検出物と受光素子との距離
が短く、又、被検出物からの反射光が直・接受光素子に
入射するので、受光素子への散乱光等の弊害が少なく、
検出されるデータは高S/N比を得ることができる。
As mentioned above, in this example, the distance between the object to be detected and the light receiving element is short, and the reflected light from the object to be detected directly enters the light receiving element, so there is no problem such as scattered light to the light receiving element. less,
The detected data can have a high S/N ratio.

第3実施例 第3の実施例は、第1の実施例と第2の実施例を複合し
たもので、即ち、基板lの表面la上、表面Ib上の両
面に受光素子5を形成したものである。発光体からの光
は、基板1の表面la側より入射し、被検出物6にて反
射する。反射光は基板1の両表面に存する受光素子5に
入射し、受光することで受光素子5は電流を発生する。
Third Embodiment The third embodiment is a combination of the first embodiment and the second embodiment, that is, the light receiving element 5 is formed on both sides of the surface la and the surface Ib of the substrate l. It is. Light from the light emitter enters the substrate 1 from the surface la side and is reflected by the object 6 to be detected. The reflected light enters the light receiving elements 5 on both surfaces of the substrate 1, and upon receiving the light, the light receiving elements 5 generate a current.

本実施例では、受光素子数を第1及び第2の実施例より
多く設けることができ、より複雑なデータを検出するこ
とができる。
In this embodiment, the number of light receiving elements can be increased compared to the first and second embodiments, and more complex data can be detected.

第1から第3の実施例より明らかなように、受光素子を
設けた透明な基板と、その基板を透過するように1個の
発光体を設けることで、センサの全体形状を小さくする
ことができる。さらに、被検出物にて反射する光量は被
検出物のデータに対応して種々存在するが、本発明の反
射型ホトセンサは受光素子を複数個備えているので、複
雑で複数の被検出物のデータを検出することができる。
As is clear from the first to third embodiments, the overall shape of the sensor can be made smaller by providing a transparent substrate with a light receiving element and one light emitter that transmits through the substrate. can. Furthermore, although the amount of light reflected by the object to be detected varies depending on the data of the object to be detected, the reflective photosensor of the present invention is equipped with a plurality of light-receiving elements. Data can be detected.

[発明の効果] 以上詳述したように本発明によれば、受光素子を備えた
透明な基板と、この基板を光が透過する1個の発光体に
よってホトセンサを構成することで、ホトセンサの形状
を小さくすることができる。
[Effects of the Invention] As detailed above, according to the present invention, the shape of the photosensor can be changed by configuring the photosensor with a transparent substrate provided with a light-receiving element and one light emitting body through which light passes through the substrate. can be made smaller.

さらに、被検出物のパターンデータを検出するための受
光素子を複数個備えることで、本発明の反射型ホトセン
サは複雑な、そして複数個のデータを一度に検出するこ
とができる。
Further, by including a plurality of light receiving elements for detecting pattern data of the object to be detected, the reflective photosensor of the present invention can detect complex and plural pieces of data at once.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の第1の実施例を示す反射型ホトセン
サの構造を示す縦断面図、第2図(a)は本発明の第1
の実施例を示す反射型ホトセンサの平面図、第2図(b
)は第2図(a)の正面図、第3図は被検出物に示され
たパターンデータの一例を示す平面図、第4図は本発明
の第1の実施例の変形例を示す反射型ホトセンサの平面
図、第5図は本発明の第2の実施例を示す反射型ホトセ
ンサの構造を示す縦断面図、第6図は本発明の第3の実
施例を示す反射型ホトセンサの正面図、第7図(a)は
従来の反射型ホトセンサを示す縦断面図、第7図(b)
は第7図(a)の背面図である。 1・・基板、2・・・透明電極、3・・・光半導体、4
・・・金属電極、i・・・受光素子。 特許出願人 鐘淵化学工業株式会社 代 理 人 弁理士青山葆外1名。
FIG. 1 is a vertical sectional view showing the structure of a reflective photosensor according to a first embodiment of the present invention, and FIG.
FIG. 2 (b) is a plan view of a reflective photosensor showing an example of
) is a front view of FIG. 2(a), FIG. 3 is a plan view showing an example of pattern data shown on an object to be detected, and FIG. 4 is a reflection showing a modification of the first embodiment of the present invention. FIG. 5 is a vertical sectional view showing the structure of a reflective photosensor according to a second embodiment of the present invention, and FIG. 6 is a front view of a reflective photosensor according to a third embodiment of the present invention. 7(a) is a vertical cross-sectional view showing a conventional reflective photosensor, and FIG. 7(b)
is a rear view of FIG. 7(a). 1... Substrate, 2... Transparent electrode, 3... Optical semiconductor, 4
...metal electrode, i...light receiving element. Patent applicant: Kanekabuchi Chemical Industry Co., Ltd. Representative: Patent attorney Aoyama Sogai (1 person).

Claims (3)

【特許請求の範囲】[Claims] (1)透明な基板と、この透明な基板を光が透過するよ
うに設けた一つの発光体と、前記基板に設けられ、この
発光体から発した光が被検出物にて反射した反射光を受
光する複数の受光素子とを備えたことを特徴とする反射
型ホトセンサ。
(1) A transparent substrate, a light emitting body provided so that light passes through the transparent substrate, and reflected light from the light emitted from the light emitting body provided on the substrate and reflected by an object to be detected. A reflective photosensor comprising a plurality of light receiving elements that receive light.
(2)受光素子を構成する材料の一つが非晶質シリコン
にてなる請求項1記載の反射型ホトセンサ。
(2) The reflective photosensor according to claim 1, wherein one of the materials constituting the light receiving element is amorphous silicon.
(3)受光素子を構成する材料の一つがアモルファスシ
リコンカーバイト層を含むヘテロ接合よりなる請求項1
記載の反射型ホトセンサ。
(3) Claim 1 in which one of the materials constituting the light receiving element is a heterojunction containing an amorphous silicon carbide layer.
Reflective photosensor described.
JP63010243A 1988-01-20 1988-01-20 Reflection type photosensor Pending JPH01184965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63010243A JPH01184965A (en) 1988-01-20 1988-01-20 Reflection type photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63010243A JPH01184965A (en) 1988-01-20 1988-01-20 Reflection type photosensor

Publications (1)

Publication Number Publication Date
JPH01184965A true JPH01184965A (en) 1989-07-24

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ID=11744865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63010243A Pending JPH01184965A (en) 1988-01-20 1988-01-20 Reflection type photosensor

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Country Link
JP (1) JPH01184965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104864893A (en) * 2014-02-21 2015-08-26 马克西姆综合产品公司 Optical sensor having a light emitter and a photodetector assembly directly mounted to a transparent substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104864893A (en) * 2014-02-21 2015-08-26 马克西姆综合产品公司 Optical sensor having a light emitter and a photodetector assembly directly mounted to a transparent substrate

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