JPH01183039A - Electron gun device - Google Patents

Abstract

PURPOSE:To increase the degree of freedom of selecting the electron beam pitch by providing two sets of static deflecting electrode mechanisms to bend both side electron beams to the outer side or to the inner side at the rear phase side from the main electron lens. CONSTITUTION:When a pitch larger than the lens pitch is to obtain, a positive voltage is applied to the static deflecting plates 6s1-6s2 at the outer side of the first static deflecting electrode mechanism 6 from the inner side static deflecting plates 6c1-6c2, and a function to deflect side beams 5s1 and 5s2 to the outer side is generated by electric fields between the static deflecting plates 6c1-6s1, and 6c2-6s2 respectively. And in this case, in the second static deflecting electrode mechanism 7, the side beams 5s1 and 5s2 are deflected to the inner side by applying a negative voltage from the inner side static deflecting plates 7c1-7c2 to the outer side deflecting plates 7s1-7s2, and a convergence effect of the electron beams is obtained. The beam pitch can be selected without depending on the lens pitch, accordingly.

Description

[Detailed description of the invention] [Industrial application field] The present invention is applicable to, for example, a color television receiver.

The present invention relates to a cathode ray tube electron gun device used in various color display devices, particularly an in-line three-electron gun type electron gun device.

[Summary of the invention]

The present invention provides an in-line three-electron gun type electron gun device in which two side electron beams are bent outward or inward to the downstream side of a main electron lens provided in the path of each electron beam.
A set of electrostatic deflection electrode mechanisms is provided to increase the degree of freedom in selecting the electron beam interval without increasing the total length of an electron gun device or complicating the electrode configuration.

[Conventional technology]

As an electron gun device for various color cathode ray tubes including color television receivers, each red, green, and blue phosphor is painted on a phosphor surface with a predetermined arrangement relationship. Three cathodes, which are the emission sources of the three electron beams corresponding to blue, are arranged almost in a straight line when viewed from the front, and the in-line three-electron gun forms a main electron lens in the path of each electron beam. A type of electron gun device may be used. In this case, the electron gun device is placed inside the neck of the cathode ray tube body, but once the inner diameter of the tube is determined, the distance between the three electron beams as seen from the front side, that is, the beam space is It is determined by the interval determined from the neck diameter of the main electron lens, that is, the lens pitch. In other words, the beam space depends on the diameter of the main electron lens, and the degree of freedom in selecting the beam space is low.

In a conventional color cathode ray tube, for example, as shown schematically in FIG. A shadow mask, aperture grill, etc., which has a color fluorescent surface (2) in which R, c, and B are painted sequentially and has an electron beam transmission aperture (3) such as a slit or a circular hole opposite to this. A color sorting means (4) is arranged, which separates three electron beams emitted from the electron gun, namely a center electron beam (5C) and a double id electron beam (5C).
31) and (5s2) are the openings (3) of the color sorting means (4).
) of the corresponding color phosphor stripe G.

It is made to land on R and B.

In this case, the distance between each phosphor RGB, that is, the pitch P, is the distance between the color selection means (4) and the color phosphor surface (2), so-called barhide GH, side beam (5S1) and (
532) and the incident angle θ, in order to obtain the required pitch P, it is necessary to increase the bar hide GH or increase the incident angle θ.

However, in practice, when forming this color fluorescent surface (2), the color selection means (4) is placed at a predetermined position of the panel part (11) and the color selection means (4) is used as an optical mask. A method is used in which the phosphor is optically printed through the aperture (3), but in this case, Fresnel diffraction occurs during exposure through the aperture (3), resulting in large bar hide GH. , the light distribution on the exposed surface of the inner surface of the panel portion (1) exhibits a remarkable bimodal property, resulting in disadvantages such as exposure unevenness and increased printing width of the phosphor.

Furthermore, when the barhide GH is made larger, the path length of the electron beam from passing through the color selection means (4) to landing on the fluorescent surface (2) becomes longer, so drift excitation due to geomagnetism is required. fruit or color sorting means (4
) The problem is that it is easily affected by a temperature rise due to electron beam impact, that is, temperature 1 lift, etc. during operation, and the effect of mislanding is large, and color shifts are likely to occur, leading to a decrease in image quality and instability. occurs.
□For these reasons, when selecting the phosphor pitch P, it is desirable to select the incident angle θ by adjusting the beam space. In the case where the electron beam (5'sz
' ) (5c:) '(5s2' ) Since the degree of freedom in selecting the interval, ie, the beam pitch (beam space), is small, there is a problem that a sufficiently large beam pitch cannot be obtained. Similarly, even if it is desired to select the beam pinch to be smaller than the spacing between the main electron lenses of each beam due to the design of the cathode ray tube, each main electron lens of the electron beam is designed to minimize the aberration of the cathode ray tube. The electron beam pitch must be made small enough so that the lens diameter is as large as possible in accordance with the inner diameter of the neck of the tube, and therefore the main electron lens pinch is made as large as possible. Problems such as not being able to do so have arisen.

[Problems to be Solved by the Invention] The present invention is characterized in that the pinch of the electron beam at the electron beam emitting end of the above-mentioned in-line 3 electron gun type electron gun device depends on the main electron lens pinch for each electron beam. An object of the present invention is to provide an electron gun device which increases the degree of freedom in selecting an electron beam or beam by allowing the selection to be made by oneself.

[Means for Solving the Problems] As shown in FIGS. 1 and 2, the present invention comprises a center electron beam (5c) and side electron beams (5c) on both sides thereof.
5sz) and (532), namely cathodes K c + K si and Ks2
The electron beams (5C) (551) and (532) are arranged almost on a straight line when viewed from the front side along arrow a.
A main electron lens Lc is provided on each path of the main electron lens Lc.

In an in-line three-electron gun type electron gun device in which Lsl and LS2 are formed, the main electron lens Lc.

Both side electron beams (
531) and (5S2) bent outward or inward 2
A set of electrostatic deflection electrode mechanisms (6) and (7) is provided, and each electron beam (5c)
, (531) and (532), that is, the beam pitch.

[Effect]

As described above, according to the device of the present invention, each main electron lens L
Each electron beam (5c), (5st) and (55
2) is deflected, for example, outward or inward by the electrostatic deflection electrode mechanism (6) in the previous stage, and then the trajectory of the deflection is reversed inward or outward by the electrostatic deflection electrode mechanism (7) in the subsequent stage. Three electron beams (5c) on the fluorescent surface
, (5sz) and (532) can converge and land on the corresponding phosphor trio, for example, the phosphors R, G, and H explained in FIG.
Since each electron beam pinch can be selected at a large or small interval that is unrelated to the pitch of the main electron lenses LC, LSI, and LS2, the arrangement pitch P of the phosphors of each color on the color phosphor surface (2) can be selected. The degree of freedom can be made sufficiently large.

〔Example〕

As shown in FIG. 1 or FIG. 2, three cathodes, that is, the central cathode Kc, are arranged in-line on the axis, and on both sides there are two cathodes symmetrically located in the same plane as the cathode Kc. Side cathodes Ksx and KS2 are arranged, and the first to sixth grids 01 to G6 common to these are arranged coaxially with the central cathode Kc.

The first grid G1 has, for example, a cathode Kc inside.

It consists of a cup-shaped electrode on which KSl and KS2 are arranged, one end face of which faces each of the cathodes K c , K sl and KS2, and an electron beam transmission aperture is bored in the part facing each of the cathodes Kc, Kst and KS2. It becomes.

The second grid G2 is formed into a plate shape, for example, and has electron beam transmission apertures facing and coaxially with each of the electron beam transmission apertures of the second grid G2.

The third grid G3 has a cylindrical shape, and end plates are formed on the side facing the second grid G2 and the side facing the fourth grid G4, respectively, and each electron beam (5c), (5s1) is formed on each end plate. ), (552) electron beam transmission apertures are bored.

Further, the fourth grid G4 is similarly formed, for example, in a plate shape, and each electron beam (5s), (5sz) and (5sz) is connected to the fourth grid G4.
g2) electron beam transmission aperture is bored.

Further, the fifth grids G5 and G6 are also composed of cylindrical metal electrodes, and the fifth grid G5 is similar to the fourth grid G5.
Grid G4 and @6 Grid G6 have an end face plate at the opposite end, respectively, and the electron beam (5c) +' (
5S1) and (5s2) transmission apertures are drilled,
Furthermore, regarding the 6th grid Gc, the 5th grid G5
It has an end plate at the end opposite to the electron beam (
5c), (551) and (5s2) are formed.

In such a configuration, for example, the second grid G and the fourth grid G are electrically connected and the same voltage is applied to them, and the third and fifth grids G5 are connected in common and have the same potential. Given. The sixth grid Ge is applied with a surface pressure anode voltage of −J, for example, 16 KV, and the fifth and third grids
A focus voltage, for example, a medium voltage of 4 KV is applied to the grid, and a low voltage of, for example, 600 V is applied to the third and second grids.
).

Regarding (5sz) and (532), the pi-unipotential type main electron lens L c 1. L St
and LSx are each electron beam (5c), (5st
) #J: Formed for Hi (5S2).

■0 Then, the 18th and 2nd grids are located after the 6th grid G6.
electrostatic deflection electrode mechanisms (6) and (7) are arranged.

The first and second electrode mechanisms (6) and (7) each have an inner pair of flat or curved electrostatic deflection plates (6C
1) and (6C2), (7ct) and (7
C2) and an electrostatic deflection plate (6st) placed outside it
and (6s2) , (7st > and (7s
2), and the same voltage is applied to each inner deflection plate, and between these opposing deflection plates (6c1) and (6C2),
Center electron beam (
5c) can travel straight without being deflected, and for each of the outer electrostatic deflection plates (6s1) (652) and (7SL) (7s2), the inner deflection plates (6ct) (6C2) and (7ct)
A voltage different from (7C2) is applied. For example, as shown in Fig. 1, when trying to obtain a beam pinch larger than the lens pinch, the outer electrostatic deflection plates (6s1) and (6S2') of the first mechanism (6) are A positive voltage is applied from the electrostatic deflection plates (6ct) and (6C2), and these electrostatic deflection plates (6c1) and (6sz)
, (6C2) and (6S2) produce an effect of deflecting the side beams (5s1) and (5s2) outward, respectively. Also, in this case,
As for the second electrostatic deflection electrode mechanism (7), by applying a more negative voltage than the inner electrostatic deflection plates M5i, (7ct) and (7C2) to the outer deflection plates C15s) and (732). Side electron beam (5S
1) and (532) are deflected inward to obtain the convergence effect of the electron beam. In the example shown in FIG. 2, a beam pitch smaller than the lens pinch is obtained, and in this case, the first electrostatic deflection electrode mechanism (6) allows both side electron beams (531),
(5s2) is deflected inward to reduce the actual beam pinch, and both side beams (5sz) (5S2) are deflected outward by the second electrostatic deflection electrode mechanism (7) to form a center beam at a desired position. (5c) to allow the side beams (531) and (552) to converge. That is, in this case, the outer electrostatic deflection plates (6s1) and (632) of the first electrostatic deflection electrode mechanism (6) are connected to the inner electrostatic deflection plates (6ct) and (6
C2) by applying a negative voltage to the outer electrostatic deflection plates (7sx) and (732) of the second electrostatic deflection electrode mechanism (7).
For the inner electrostatic deflection plate (7cz) and (7C2
) Apply a more negative voltage.

First and second electrostatic deflection electrode mechanisms (6) and (7)
For example, as shown in FIG. 3, an end face plate (8) is provided at the rear end of the sixth Glisotho Gs, and electron beam transmission apertures hc, hsl, and hs2 are formed in this, respectively, and on opposite sides thereof, an end face plate (8) is provided. A pair of deflection plates (6sz) and (6S2) bent in an L-shape along the axis are provided, and the same potential as that of the sixth grid G6 is provided to them, and pairs of deflection plates (6sz) and (6S2) are provided on both sides of the central electron beam transmission aperture hc. The deflection plates (91) and (92) are mechanically and electrically connected so as to face each other. These deflection plates (91) and (92) allow the inner electrostatic deflection plates (6cz) and (6C
2), and the inner electrostatic deflection plates (7cr) and (7C2) are formed electrically in common with this. In addition, electrically separated from these deflection plates (91) and (92), one inner electrostatic deflection plate ( 6C
1) (6C2) and outer electrostatic deflection plate (7sz)
(732), with electron beam transmission apertures hs+2+hs22 for electron beams (5s1) and (5s2,) formed in their respective bent plate portions, and deflection plates (101) and (101) bent in a crank shape; 102) are provided, and these deflection plates (101) and (102) are provided with deflection plates (691) (6s2) from the sixth grid G6.
) ('/ct) (7C2) A deflection voltage 1 to 2 (■) lower than that is applied.

In fact, in cathode ray tubes, mislanding is likely to occur in the peripheral areas of the fluorescent surface (screen), especially in some corners, so in order to ensure landing margin for the electron beam, the fluorescent surface is It is desired that the arrangement pinch of each of the phosphors R, G, and B be large in the periphery, especially in a part of the middle corner, and therefore, the beam pinch becomes large when scanning this periphery, especially in a part of the middle corner. so the first and second
Electrostatic deflection electrodes (6) and (7) of FIG.
It is desirable to superimpose and apply a parabolic dynamic deflection correction voltage synchronized with the horizontal and/or vertical deflection of the beam, particularly with the vertical deflection, to the deflection plates (101) and (102).

Furthermore, in the example described above, the present invention is applied to an in-line three electron gun device having a high unipotential main electron lens configuration, but the main electron lens Lc +
The present invention can be applied to electron guns of various configurations using electrode configurations having various configurations including unipotential or pipotential configurations such as LSII LS2.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to increase the degree of freedom in selecting the positioning position of the phosphor in the lens position. As described above, by superimposing a parabolic dynamic deflection correction voltage synchronized with the horizontal and/or vertical scanning period to the electrostatic deflection electrode mechanisms (6) and (7), the phosphors at the periphery of the screen are By increasing the pitch P, it is possible to increase the tolerance for landings that are likely to occur here and avoid color shift due to mislandings. Furthermore, deviations in the landing position due to variations in the bar hide GH due to differences in the shape of the cathode ray tube panel made of glass molding, for example, can be corrected by applying a correction voltage to the electrostatic deflection electrodes (6) and (7). A high-quality cathode ray tube that can be adjusted and avoids mislanding can be constructed.

[Brief explanation of the drawing]

1 and 2 are diagrams showing the configuration of electrodes on each side of the electron gun device according to the present invention, FIG. 3 is a configuration diagram of an example of the electrostatic deflection electrode mechanism, and FIG. 4 is a main part of a color cathode ray tube. FIG. (1) is the panel part, (2) is the color fluorescent surface, (4) is the color selection means, (5c) is the center electron beam, (5sz
) and (5s2) are side electron beams, K CI K
s1*KS2 is a cathode, Lc, LSI, LS2 is a main electron lens, and (6) and (7) are electrostatic deflection electrode mechanisms.

Claims (1)

[Claims] Three electron beam radiation sources that emit a center electron beam and side electron beams on both sides are arranged almost in a straight line when viewed from the front, and a main electron lens is formed in the path of each electron beam. In the gun-type electron gun device, two sets of electrostatic deflection electrode mechanisms are provided downstream of the main electron lens to bend the electron beams on both sides outward or inward, and are independent of the spacing between the main electron lenses. An electron gun device characterized in that it is possible to select an electron beam interval.