JPH01182756A - Probe card - Google Patents
Probe cardInfo
- Publication number
- JPH01182756A JPH01182756A JP623188A JP623188A JPH01182756A JP H01182756 A JPH01182756 A JP H01182756A JP 623188 A JP623188 A JP 623188A JP 623188 A JP623188 A JP 623188A JP H01182756 A JPH01182756 A JP H01182756A
- Authority
- JP
- Japan
- Prior art keywords
- needle
- contact
- measured
- probe
- edge sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 230000002265 prevention Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 16
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 239000004332 silver Substances 0.000 abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 4
- 239000010931 gold Substances 0.000 abstract description 4
- 229910052697 platinum Inorganic materials 0.000 abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 239000011810 insulating material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は半導体集積回路素子(IC)の製造工程におい
て、被測定体の電気的特性を測定するためのプローブカ
ードに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probe card for measuring the electrical characteristics of an object to be measured in the manufacturing process of a semiconductor integrated circuit element (IC).
[従来の技術及び発明が解決しようとする問題点]プロ
ーバによる被測定体であるICの集合体であるウェハの
測定は、各々のICチップのそれぞれのポンディングパ
ッドにプローバ本体に電気的に接続されて植設された多
数のプローブ針を接触させICの電気的及び電気的特性
を順次測定して行っている。測定はウェハを載置した載
置台を上昇させ、ICチップのポンディングパッドとプ
ローブ針が接触した事を検知させる為に開開回路を持つ
エツジセンサが使われて、この時エツジセンサは開回路
となる。1つ又は複数のICの測定が終了すると載置台
を下降させプローブ針は被測定体から離れると同時にこ
の状態を知らせる為にエツジセンサは閉回路となる。次
のICチップにプローブ針が接触するように載置台を移
動させ、再び上昇してポンディングパッドとプローブ針
との接触を行い、連続的にICチップの測定が行われ。[Prior art and problems to be solved by the invention] When measuring a wafer, which is an assembly of ICs, which is an object to be measured using a prober, each bonding pad of each IC chip is electrically connected to the prober body. The electrical and electrical characteristics of the IC are sequentially measured by contacting a large number of implanted probe needles. For measurement, the mounting table on which the wafer is placed is raised, and an edge sensor with an open/open circuit is used to detect contact between the IC chip's bonding pad and the probe needle; at this time, the edge sensor becomes an open circuit. . When the measurement of one or more ICs is completed, the mounting table is lowered and the probe needle leaves the object to be measured. At the same time, the edge sensor becomes a closed circuit to notify this state. The mounting table is moved so that the probe needle contacts the next IC chip, and is raised again to bring the bonding pad into contact with the probe needle, thereby continuously measuring the IC chips.
1つのウェハの測定が終了するようになっている。The measurement of one wafer is now completed.
このように連続的測定が行われる電気的及び電気的特性
検査において、各々のICの測定が開始、完了するたび
に載置台は上昇、下降する。この動作状態を検知するた
めにエツジセンサが鋤(ようになっている。第3図に示
すエツジセンサは、先端部2が垂直に折れ曲がり、ウェ
ハに接触する針1と針1が垂直に折れ曲がる直前の部分
3で接触するように先端部5を水平方向に屈曲させた針
4で構成されている。(他のプローブ針及びエツジセン
サは省略。)第1の針1と第2の針4は常時電流が流さ
れ閉回路を形成している。ウェハ6が上昇され、第1の
針1の先端2′がウェハ6に接触し、さらに少しウェハ
6が上昇されると第1の針1も僅かに上昇し、第2の針
4との接点3がスイッチとなり非接触となって開回路と
なり、ウェハの存在を検知するようになっている。IC
の測定が終了すると、ウェハを載置した載置台は下降し
プローブ針はICから離れると共にエツジセンサの接点
3が接触し閉回路となる。この状態をプローバが読み取
りその事を表示する。この様に一つのサイクルの中でI
Cの有無とプローブ針がICに接触、離反を繰返す状態
を検知させる為に使われる。In such electrical and electrical characteristic testing where continuous measurements are performed, the mounting table is raised and lowered each time the measurement of each IC is started and completed. In order to detect this operating state, the edge sensor is shaped like a plow.The edge sensor shown in Figure 3 has a tip 2 bent vertically, a needle 1 that contacts the wafer, and a portion just before the needle 1 bends vertically. It consists of a needle 4 with a tip 5 bent in the horizontal direction so as to make contact at 3. (Other probe needles and edge sensors are omitted.) The first needle 1 and the second needle 4 are constantly connected to a current. The wafer 6 is lifted and the tip 2' of the first needle 1 comes into contact with the wafer 6, and when the wafer 6 is lifted a little further, the first needle 1 also rises slightly. However, the contact point 3 with the second needle 4 becomes a switch, becomes non-contact, and becomes an open circuit, thereby detecting the presence of the wafer.IC
When the measurement is completed, the mounting table on which the wafer is placed is lowered, the probe needle leaves the IC, and the contacts 3 of the edge sensor come into contact, forming a closed circuit. The prober reads this status and displays it. In this way, I
It is used to detect the presence or absence of C and the state in which the probe needle repeatedly contacts and separates from the IC.
ここでエツジセンサの2針の接点は常時電流が流されて
おり酸化されやすい状態になる。表面が酸化されると接
触抵抗が高くなり接触不良を起し、エツジセンサの働き
が悪くなり、ICの留保の低下又は測定不能状態になっ
てしまうという欠点が生じる。Here, current is constantly flowing through the two-needle contacts of the edge sensor, making them susceptible to oxidation. When the surface is oxidized, the contact resistance increases, resulting in poor contact, which impairs the function of the edge sensor, resulting in a disadvantage that the IC's retention capacity decreases or becomes unmeasurable.
このため1本発明の目的は上記欠点を解消し接点が良い
接触状態を保持°し、良好なスイッチの役目を果すよう
なエツジセンサを提供することにある。Therefore, one object of the present invention is to provide an edge sensor that eliminates the above-mentioned drawbacks, maintains a good contact state at the contacts, and functions as a good switch.
[問題を解決するための手段]
本発明は以上のような目的を達成するため、被測定体の
電極に先端を接触させ、前記被測定体の電気的特性を測
定するプローブ針と、前記ウェハの位置を検知するエツ
ジセンサを備えたプローブカードにおいて、前記エツジ
センサは、1接点を持ち閉回路を形成する少くとも2本
の針から成り、前記プローブ針が前記被測定体の電極に
非接触時は、前記少くとも2本の針が接触して導通され
ており、前記プローブ針が前記チップの電極に接触時は
、前記少くとも2本の針のうち第1の針が上昇され、第
2の針との接点が離反して開回路となるものであって、
前記接点部分が酸化防止のため非酸化化合金属で被膜さ
れたことを特徴とする。[Means for Solving the Problems] In order to achieve the above-mentioned objects, the present invention provides a probe needle whose tip is brought into contact with an electrode of the object to be measured to measure the electrical characteristics of the object to be measured, and the wafer. In a probe card equipped with an edge sensor that detects the position of the object, the edge sensor includes at least two needles having one contact and forming a closed circuit, and when the probe needle is not in contact with the electrode of the object to be measured, , the at least two needles are in contact and electrically conductive, and when the probe needle contacts the electrode of the chip, the first needle of the at least two needles is raised and the second needle is raised. The point of contact with the needle separates, resulting in an open circuit,
The contact portion is coated with a non-oxidizing compound metal to prevent oxidation.
[実施例] 以下、本発明を実施例をあげて説明する。[Example] Hereinafter, the present invention will be explained by giving examples.
第1図に図示のエツジセンサにおいて第1の針11は先
端部12を垂直に曲げられ、先端に絶縁物12″を接着
されて形成され、第1の針11の下方に接点13で接触
するよう先端部15を水平に屈曲させてなる第2の針1
4が形成され、チップの測定時には測定回路とは異なる
電気回路に接続され導通状態になっている。In the edge sensor shown in FIG. 1, the first needle 11 has a tip 12 bent vertically, an insulator 12'' is glued to the tip, and the contact point 13 is made to contact the lower part of the first needle 11. A second needle 1 whose tip portion 15 is bent horizontally
4 is formed, and when the chip is measured, it is connected to an electric circuit different from the measurement circuit and is in a conductive state.
これらの針は何回もの接触検査に耐えうるため、硬質で
ある事が条件とされ、タングステン等の硬質な金属で形
成される。第1の針11及び第2の針14はタングステ
ンで形成され、第1の針11及び第2の針14の接点1
3近傍を酸化防止のため金属メツキして形成する。メツ
キに用いられる金属は硬質で良導体が良く、金、白金、
銀及びロジウム等が適用される。金、白金及びロジウム
は化学的に安定できわめて硬いため好適であるが、銀メ
ツキは酸化物や硫化物により変色するため、これを防止
するため銀メツキ上にロジウムメツキやクロメート処理
を施すと好適である。これらの金属メツキされた接点部
分は高温や接触により酸化を受けにくく、酸化により、
タングステンの接触抵抗が高くなり、接触不良でスイッ
チの不良状態になることを防止することができる。These needles must be hard so that they can withstand repeated contact tests, and are made of hard metal such as tungsten. The first needle 11 and the second needle 14 are made of tungsten, and the contact point 1 of the first needle 11 and the second needle 14 is
The area around 3 is plated with metal to prevent oxidation. The metals used for plating are hard and have good conductivity, such as gold, platinum,
Silver, rhodium, etc. are applied. Gold, platinum, and rhodium are suitable because they are chemically stable and extremely hard, but silver plating discolors due to oxides and sulfides, so it is preferable to perform rhodium plating or chromate treatment on the silver plating to prevent this. It is. These metal-plated contacts are resistant to oxidation due to high temperatures and contact, and due to oxidation,
The contact resistance of tungsten increases, and it is possible to prevent the switch from becoming defective due to poor contact.
また、第1の針11の被測定体への接触部分である先端
部に絶縁物12”を形成させ、第1の針11に導通され
る電流が測定物である被測定体に流れるのを防止する。In addition, an insulator 12'' is formed at the tip of the first needle 11, which is the part that contacts the object to be measured, to prevent the current conducted through the first needle 11 from flowing to the object to be measured, which is the object to be measured. To prevent.
このため、被測定体の測定時に誤った電流が被測定体に
流れ、誤測定がなされる事もなく、効率的な測定をする
事ができる。Therefore, when measuring the object to be measured, an erroneous current will not flow to the object to be measured and erroneous measurements will not be made, and efficient measurement can be performed.
絶縁物12″はプラスチック、ガラスその他の物質で形
成された絶縁物質でもよい。尚、エッジセンサによって
はこの絶縁物が不必要の場合もある。The insulator 12'' may be an insulating material made of plastic, glass, or other material. However, depending on the edge sensor, this insulator may not be necessary.
またエツジセンサの他の実施例を第2図に示す。Another embodiment of the edge sensor is shown in FIG.
第2図において、通常のプローブ針26に絶縁部27を
設け、絶縁部27に接するように先端部25を水平方向
に屈曲させて形成した第1の針24と第1の針24の下
方に接点23を持って接触する第2の針21が形成され
エツジセンサとする。In FIG. 2, an ordinary probe needle 26 is provided with an insulating part 27, and a first needle 24 is formed by bending the tip part 25 in the horizontal direction so as to contact the insulating part 27. A second needle 21 that makes contact with a contact point 23 is formed to form an edge sensor.
第1の針24と第2の針21は接点23を持って導通さ
れている。プローブ針26は通常のICの測定にも用い
られるが同時に上昇するウェハに接触して押上げられる
と、絶縁部27上の第1の針24を押し上げることによ
り、第2の針21との接点23が非接触状態になり、ウ
ェハの存在を検知する針として使用することができる。The first needle 24 and the second needle 21 have a contact point 23 and are electrically connected. The probe needle 26 is also used for normal IC measurements, but when it comes into contact with the rising wafer and is pushed up, the probe needle 26 pushes up the first needle 24 on the insulating part 27, thereby making contact with the second needle 21. 23 becomes a non-contact state and can be used as a needle to detect the presence of a wafer.
第1の針24、と第2の針21は常時導通されており、
プローブ針26との接点部分に絶縁部27を設けたため
、ウェハの測定回路と、ウェハの検知センサ回路とは絶
縁状態を保つことができる。第1の針24と第2の針2
1との接点部23は金、白金、銀あるいはロジウムメツ
キされ酸化防止されている。The first needle 24 and the second needle 21 are always electrically connected,
Since the insulating portion 27 is provided at the contact point with the probe needle 26, the wafer measurement circuit and the wafer detection sensor circuit can be kept in an insulated state. First needle 24 and second needle 2
The contact portion 23 with 1 is plated with gold, platinum, silver, or rhodium to prevent oxidation.
[発明の効果]
以上説明したように本発明のエツジセンサは、少なくと
も2本の針の接点を金属メツキしたため、接点の接触不
良を避けることができウェハの存在を正しく検知するこ
とができる。そのため、プローバの誤操作を生じること
なくむだのない測定ができ効率的である。また、エツジ
センサに流れる電流は絶縁部を設けたため、被測定体で
あるチップに雑電流として流れるのを防止できるため、
正しい測定結果を得ることができる。[Effects of the Invention] As explained above, in the edge sensor of the present invention, since the contacts of at least two needles are plated with metal, poor contact between the contacts can be avoided and the presence of a wafer can be correctly detected. Therefore, measurement can be carried out efficiently without causing any erroneous operation of the prober. In addition, since the current flowing through the edge sensor is provided with an insulating section, it can be prevented from flowing as miscellaneous current to the chip, which is the object to be measured.
Accurate measurement results can be obtained.
第1図及び第2図は本発明に係るエツジセンサの実施例
を示す図であり、第3図は従来のエツジセンサを示す図
である。
1.11.24・・・・・・第1の針
4.14.21・・・・・・第2の針
3.13.23・・・・・・接点
12′・・・・・・・・・・・・・・絶縁物27・・・
・・・・・・・・・・・・・絶縁部611@・e・Φ・
・■・Φ・・・・・eウェハ代理人 弁理士 守 谷
−雄
第1図
第2図
第3図1 and 2 are diagrams showing an embodiment of an edge sensor according to the present invention, and FIG. 3 is a diagram showing a conventional edge sensor. 1.11.24...First needle 4.14.21...Second needle 3.13.23...Contact 12'... ...Insulator 27...
・・・・・・・・・・・・Insulation part 611@・e・Φ・
・■・Φ・・・e-wafer agent Patent attorney Moritani -O Figure 1 Figure 2 Figure 3
Claims (1)
気的特性を測定するプローブ針と、前記被測定体の位置
を検知するエッジセンサを備えたプローブカードにおい
て、前記エッジセンサは1接点を持ち閉回路を形成する
少なくとも2本の針から成り、前記プローブ針が前記被
測定体の電極に非接触時は前記少くとも2本の針が接触
して導通されており、前記プローブ針が前記チップの電
極に接触時は前記少くとも2本の針のうち第1の針が上
昇され、第2の針との接点が離反して開回路となるもの
であって、前記接点部分が酸化防止のため非酸化化合金
属で被膜されたことを特徴とするプローブカード。In a probe card comprising a probe needle whose tip contacts an electrode of the object to be measured and measures the electrical characteristics of the object to be measured, and an edge sensor that detects the position of the object to be measured, the edge sensor has one contact point. When the probe needle is not in contact with the electrode of the object to be measured, the at least two needles are in contact and conductive; When contacting the electrode of the chip, the first needle of the at least two needles is lifted, and the point of contact with the second needle is separated, resulting in an open circuit, and the contact portion is oxidized. A probe card characterized by being coated with a non-oxidizing compound metal for prevention.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63006231A JPH0627748B2 (en) | 1988-01-14 | 1988-01-14 | Probe card |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63006231A JPH0627748B2 (en) | 1988-01-14 | 1988-01-14 | Probe card |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01182756A true JPH01182756A (en) | 1989-07-20 |
JPH0627748B2 JPH0627748B2 (en) | 1994-04-13 |
Family
ID=11632742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63006231A Expired - Lifetime JPH0627748B2 (en) | 1988-01-14 | 1988-01-14 | Probe card |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0627748B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013224876A (en) * | 2012-04-23 | 2013-10-31 | Fujitsu Semiconductor Ltd | Semiconductor testing device, probe card and semiconductor testing method |
JP6350775B1 (en) * | 2017-11-16 | 2018-07-04 | 三菱電機株式会社 | Probe card, semiconductor measuring device and semiconductor measuring system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55173143U (en) * | 1979-05-26 | 1980-12-12 | ||
JPS5917860U (en) * | 1982-07-24 | 1984-02-03 | 日本電子材料株式会社 | Measuring probe |
-
1988
- 1988-01-14 JP JP63006231A patent/JPH0627748B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55173143U (en) * | 1979-05-26 | 1980-12-12 | ||
JPS5917860U (en) * | 1982-07-24 | 1984-02-03 | 日本電子材料株式会社 | Measuring probe |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013224876A (en) * | 2012-04-23 | 2013-10-31 | Fujitsu Semiconductor Ltd | Semiconductor testing device, probe card and semiconductor testing method |
JP6350775B1 (en) * | 2017-11-16 | 2018-07-04 | 三菱電機株式会社 | Probe card, semiconductor measuring device and semiconductor measuring system |
WO2019097629A1 (en) * | 2017-11-16 | 2019-05-23 | 三菱電機株式会社 | Probe card, semiconductor measuring device, and semiconductor measuring system |
TWI664428B (en) * | 2017-11-16 | 2019-07-01 | 日商三菱電機股份有限公司 | Detection card, semiconductor measuring device and semiconductor measuring system |
CN111344577A (en) * | 2017-11-16 | 2020-06-26 | 三菱电机株式会社 | Probe card, semiconductor measuring device, and semiconductor measuring system |
US11215639B2 (en) | 2017-11-16 | 2022-01-04 | Mitsubishi Electric Corporation | Probe card, semiconductor measuring device, and semiconductor measuring system |
Also Published As
Publication number | Publication date |
---|---|
JPH0627748B2 (en) | 1994-04-13 |
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