JPH0118147B2 - - Google Patents
Info
- Publication number
- JPH0118147B2 JPH0118147B2 JP60282470A JP28247085A JPH0118147B2 JP H0118147 B2 JPH0118147 B2 JP H0118147B2 JP 60282470 A JP60282470 A JP 60282470A JP 28247085 A JP28247085 A JP 28247085A JP H0118147 B2 JPH0118147 B2 JP H0118147B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- plasma
- electrode
- plasma electrode
- cleaning device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000010453 quartz Substances 0.000 claims description 34
- 238000004140 cleaning Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 34
- 150000002500 ions Chemical class 0.000 description 10
- 230000005684 electric field Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、減圧CVD装置などに用いるプラズ
マクリーニング装置に関するもので、更に述べる
と、プラズマにより石英管内壁面をクリーニング
する装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a plasma cleaning device used in a low-pressure CVD device, and more specifically, to a device for cleaning the inner wall surface of a quartz tube using plasma.
従来の技術
減圧CVD装置でウエハを処理していると、該
装置の石英管内壁面に二酸化シリコンやシリコン
ナイトライトなどが付着する。Prior Art When wafers are processed in a low-pressure CVD apparatus, silicon dioxide, silicon nitrite, etc. adhere to the inner wall surface of a quartz tube of the apparatus.
そして、この付着物は、石英管内壁面から剥離
して、処理中のウエハに付着し、不良品の原因と
なるので、石英管内壁面をクリーニングする必要
がある。 This deposit peels off from the inner wall surface of the quartz tube and adheres to the wafer being processed, causing defective products, so it is necessary to clean the inner wall surface of the quartz tube.
従来、このクリーニングは、第４図に示す様
に、高周波電圧用電極１と接地用電極２とを石英
管３で囲み、この石英管３をCVD装置４のプロ
セス石英管５に挿入した後、電極１に高周波電圧
を印加し、プラズマを発生させることにより行な
つている。 Conventionally, this cleaning has been carried out by surrounding the high-frequency voltage electrode 1 and the grounding electrode 2 with a quartz tube 3, inserting the quartz tube 3 into the process quartz tube 5 of the CVD device 4, as shown in FIG. This is done by applying a high frequency voltage to the electrode 1 to generate plasma.
発明が解決しようとする問題点
従来例のプラズマクリーニング装置では、電極
１，２間に第４図鎖線Ａで示す様な電界が生じ、
イオン鞘すなわちイオンシースによる電極表面の
電位降下が発生する。Problems to be Solved by the Invention In the conventional plasma cleaning device, an electric field as shown by the chain line A in FIG. 4 is generated between the electrodes 1 and 2.
A potential drop occurs on the electrode surface due to the ion sheath.
しかし、プロセス石英管５近傍は、電圧が安定
しているので、この近傍のイオンは加速されず、
浮いている様な状態となる。 However, since the voltage near the process quartz tube 5 is stable, the ions near this area are not accelerated.
It will be like floating.
従つて、イオンがプロセス石英管内壁面に衝突
するのに時間がかかるので、高速クリーニングは
不可能であつた。 Therefore, it takes time for the ions to collide with the inner wall surface of the process quartz tube, making high-speed cleaning impossible.
本発明は、上記事情に鑑み、プラズマクリーニ
ングを高速に行なうことを目的とする。 In view of the above circumstances, the present invention aims to perform plasma cleaning at high speed.
問題点を解決するための手段
本発明は、外周面に外側プラズマ電極を設けた
石英管に、内側プラズマ電極を同心状に嵌着した
ことを特徴とするプラズマクリーニング装置であ
る。Means for Solving the Problems The present invention is a plasma cleaning device characterized in that an inner plasma electrode is fitted concentrically into a quartz tube provided with an outer plasma electrode on its outer peripheral surface.
作 用
石英管に内側プラズマ電極を同心状に嵌着した
後、該電極に高周波電圧を印加し、石英管内にプ
ラズマを発生させる。Action After fitting the inner plasma electrode concentrically into the quartz tube, a high frequency voltage is applied to the electrode to generate plasma within the quartz tube.
この時、内側プラズマ電極と外側プラズマ電極
との間には電界が生じ、イオンシースによる電極
表面の電圧降下が発生するが、石英管は外側プラ
ズマ電極のイオンシース部に位置しているので、
石英管付近のイオンは電圧降下の影響により加速
され、石英管内壁面に高速で衝突し、内壁面の付
着物にめりこむ。 At this time, an electric field is generated between the inner plasma electrode and the outer plasma electrode, and a voltage drop occurs on the electrode surface due to the ion sheath, but since the quartz tube is located at the ion sheath part of the outer plasma electrode,
Ions near the quartz tube are accelerated by the voltage drop, collide with the inner wall of the quartz tube at high speed, and sink into deposits on the inner wall.
実施例
本発明の一実施例を添附図面に基き説明する
が、同一図面符号はその名称も機能も同一であ
る。Embodiment An embodiment of the present invention will be described with reference to the accompanying drawings, in which the same reference numerals have the same names and functions.
１０は減圧CVD装置の石英管で、この石英管
１０の外周面には、円筒状の外側プラズマ電極１
１が配設されている。この外側プラズマ電極１１
は、接地されているので、シールド機能を有す
る。 10 is a quartz tube of the reduced pressure CVD apparatus, and a cylindrical outer plasma electrode 1 is provided on the outer peripheral surface of this quartz tube 10.
1 is arranged. This outer plasma electrode 11
Since it is grounded, it has a shielding function.
１２は、高周波電圧を印加する内側プラズマ電
極で円筒状に形成されている。この内側プラズマ
電極１２は、カバー用石英管１３により包囲され
ているので、電極１２のよごれは、石英管１０内
に飛散することはない。 Reference numeral 12 denotes an inner plasma electrode which applies a high frequency voltage and is formed in a cylindrical shape. Since this inner plasma electrode 12 is surrounded by the quartz tube 13 for cover, dirt on the electrode 12 will not be scattered into the quartz tube 10.
カバー用石英管１３には、取手１４と真空フラ
ンジ１５が設けられているが、この真空フランジ
１５は、プラズマクリーニング時に石英管１０内
を真空に保持せしめる。 The cover quartz tube 13 is provided with a handle 14 and a vacuum flange 15, and the vacuum flange 15 maintains the inside of the quartz tube 10 in a vacuum during plasma cleaning.
本実施例の作動につき説明すると、取手１４を
把持し、内側プラズマ電極１２を石英管１０内に
同心状に挿入し、真空フランジ１５で石英管１０
をシールする。 To explain the operation of this embodiment, the handle 14 is grasped, the inner plasma electrode 12 is concentrically inserted into the quartz tube 10, and the vacuum flange 15 is inserted into the quartz tube 10.
to seal.
次に、内側プラズマ電極１２に高周波電圧を印
加すると、電極１１，１２間にプラズマが発生す
ると共に、同心円状の等電位線１６と、半径方向
の電界１７が生ずる。 Next, when a high frequency voltage is applied to the inner plasma electrode 12, plasma is generated between the electrodes 11 and 12, and concentric equipotential lines 16 and a radial electric field 17 are generated.
そして、イオン１８は、イオンシースによる外
側プラズマ電極１１表面の電位降下の影響により
加速され、石英管内壁面１０ａに高速で衝突し、
付着物１９、例えば、二酸化シリコンやポリシリ
コン内にめり込んでエツチングを行ない、石英管
内壁面１０ａの付着物１９を除去する。 Then, the ions 18 are accelerated by the influence of the potential drop on the surface of the outer plasma electrode 11 due to the ion sheath, and collide with the inner wall surface 10a of the quartz tube at high speed.
The deposit 19, for example, silicon dioxide or polysilicon, is etched to remove the deposit 19 on the inner wall surface 10a of the quartz tube.
このエツチングは、両電極１１，１２が同心状
に設けられているので、均等に、すなわち、バラ
ツキがなく行なうことができる。 Since both electrodes 11 and 12 are provided concentrically, this etching can be performed evenly, that is, without any variation.
又、外側プラズマ電極１１は、接地されている
ので、プラズマのノイズがシールドされる。 Furthermore, since the outer plasma electrode 11 is grounded, plasma noise is shielded.
従つて、CVD装置の中央処理装置（CPU）な
どが、プラズマのノイズにより誤作動するのを防
止できる。 Therefore, it is possible to prevent the central processing unit (CPU) of the CVD apparatus from malfunctioning due to plasma noise.
内側プラズマ電極１２は、カバー用石英管１３
により覆われているので、電極１２のよごれは石
英管１０内に飛散することはない。 The inner plasma electrode 12 is a quartz tube 13 for a cover.
Since the electrode 12 is covered with a quartz tube, dirt on the electrode 12 will not be scattered into the quartz tube 10.
発明の効果
本発明は以上の様に、外周面に外側プラズマ電
極を設けた石英管に内側プラズマ電極を同心状に
嵌着したので、イオンは、イオンシースにより加
速され、石英管内壁面に高速で衝突し、そして、
エツチングが行なわれる。Effects of the Invention As described above, in the present invention, the inner plasma electrode is fitted concentrically to the quartz tube with the outer plasma electrode provided on the outer peripheral surface, so that ions are accelerated by the ion sheath and hit the inner wall surface of the quartz tube at high speed. collide, and
Etching is performed.
従つて、プラズマクリーニングを高速で行なう
ことができる。 Therefore, plasma cleaning can be performed at high speed.
第１図〜第３図は、本発明の実施例を示す図
で、第１図は、その縦断面図、第２図は、内側プ
ラズマ電極を示す斜視図、第３図は、第１図の一
部拡大図、第４図は従来例を示す図である。
１０…石英管、１１…外側プラズマ電極、１２
…内側プラズマ電極、１３…カバー用石英管。
1 to 3 are views showing an embodiment of the present invention, in which FIG. 1 is a longitudinal sectional view thereof, FIG. 2 is a perspective view showing an inner plasma electrode, and FIG. 3 is a view similar to that shown in FIG. 1. FIG. 4 is a partially enlarged view of a conventional example. 10...Quartz tube, 11...Outer plasma electrode, 12
...Inner plasma electrode, 13...Quartz tube for cover.
Claims (1)
に、内側プラズマ電極を同心状に嵌着したことを
特徴とするプラズマクリーニング装置。 ２ 外側プラズマ電極は、接地されていることを
特徴とする特許請求の範囲第１項記載のプラズマ
クリーニング装置。 ３ 内側プラズマ電極は、高周波電圧印加用電極
であることを特徴とする特許請求の範囲第１項記
載のプラズマクリーニング装置。 ４ 内側プラズマ電極は、カバー用石英管で覆わ
れていることを特徴とする特許請求の範囲第１項
記載のプラズマクリーニング装置。[Scope of Claims] 1. A plasma cleaning device characterized in that an inner plasma electrode is fitted concentrically into a quartz tube having an outer plasma electrode provided on its outer peripheral surface. 2. The plasma cleaning device according to claim 1, wherein the outer plasma electrode is grounded. 3. The plasma cleaning device according to claim 1, wherein the inner plasma electrode is an electrode for applying a high frequency voltage. 4. The plasma cleaning device according to claim 1, wherein the inner plasma electrode is covered with a quartz tube for a cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282470A JPS62139884A (en) | 1985-12-16 | 1985-12-16 | Plasma cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282470A JPS62139884A (en) | 1985-12-16 | 1985-12-16 | Plasma cleaning device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62139884A JPS62139884A (en) | 1987-06-23 |
| JPH0118147B2 true JPH0118147B2 (en) | 1989-04-04 |
Family
ID=17652844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60282470A Granted JPS62139884A (en) | 1985-12-16 | 1985-12-16 | Plasma cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62139884A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS648285A (en) * | 1987-06-30 | 1989-01-12 | Fujitsu Ltd | Dry washing method of quartz pipe |
| JP2717169B2 (en) * | 1988-12-27 | 1998-02-18 | 東京エレクトロン株式会社 | Plasma processing method and apparatus |
| US5364660A (en) * | 1989-07-21 | 1994-11-15 | Minnesota Mining And Manufacturing Company | Continuous atmospheric pressure CVD coating of fibers |
| KR100514105B1 (en) * | 2002-11-25 | 2005-09-09 | 한미반도체 주식회사 | Atmospheric plasma generating apparatus |
-
1985
- 1985-12-16 JP JP60282470A patent/JPS62139884A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62139884A (en) | 1987-06-23 |
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