JPH09186088A - Method and apparatus for manufacturing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the damage to a circuit formed of material to be treated by applying a positive voltage to a conductive material installed without contacting the material to be treated near the material to be treated in the case of treating the material by using a plasma. SOLUTION: When a film is formed on the surface 1b of a semiconductor wafer 1 by a sputtering unit, treating gas is supplied into the interior 2a of a chamber 2, the chamber 2 is evacuated by a vacuum pump 4 to a vacuum atmosphere. Then, a semiconductor wafer 1 is mounted on a holder 7, then a negative voltage is applied to a counter electrode 8 by a power source 13, and a plasma is generated between the wafer 1 and the electrode 8. At the time of sputtering, a positive voltage is applied to a shielding member 10b a power source 11 simultaneously upon applying of the negative voltage to the electrode 8, and a film is formed, and then the applications of both the voltages are stopped. Thus, electrons 17 emitted from the plasma 3 are trapped to the member 10 to prevent the damage of the circuit with the electrons.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique in which plasma is used in a vacuum processing container to perform processing such as sputtering on an object to be processed, and in particular, electrostatic charge on the surface of the object is prevented. Semiconductor manufacturing method and device.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

As an example of a semiconductor manufacturing apparatus for processing a semiconductor wafer, which is an object to be processed, in a vacuum processing container formed of quartz or the like, there is one called a sputtering apparatus.

This is because a vacuum atmosphere is formed by performing vacuum evacuation while supplying an inert processing gas such as argon into the vacuum processing container, and further plasma is generated in the vacuum processing container to generate a semiconductor wafer. The target material is sputtered (repelled) on the top to perform the film forming process.

Here, the supporting method for supporting the semiconductor wafer on the sample table is mainly a non-contact method such as a clamping method and an electrostatic chuck method (other members are not in contact with the surface of the semiconductor wafer). Method) is known.

First, in the clamping method, a clamp member is brought into contact with the surface of a semiconductor wafer and the semiconductor wafer is pressed and supported by the clamp member. At that time, the clamp member is grounded.

In the electrostatic chuck method, a semiconductor wafer is attracted and supported by Coulomb force.

The sputtering apparatus is described, for example, in pages 24-28 of the Industrial Research Institute Co., Ltd., issued November 22, 1991, "Electronic Materials 1992 Separate Volume, VLSI Manufacturing and Testing Equipment Guidebook". ing.

[0009]

However, in the sputtering apparatus of the above-mentioned technique, when the method of supporting the semiconductor wafer is the clamping method, the clamping member comes into contact with the semiconductor wafer, so that foreign matter is generated from the contact portion. The problem is that the yield of semiconductor wafers is reduced.

Further, when the method of supporting the semiconductor wafer is a non-contact method, electrons are charged on the surface of the semiconductor wafer during processing.

This is because during the sputtering process, the electrons emitted from the plasma rush into the semiconductor wafer and the surface of the semiconductor wafer is charged (also referred to as charge-up) to about -10 to 20V.

As a result, electrons reach the gate electrode of the circuit formed on the semiconductor wafer and the electrons accumulate there, so that the gate electrode is destroyed, that is,
It is a problem to cause the destruction of the circuit.

An object of the present invention is to provide a semiconductor manufacturing method and apparatus for preventing the destruction of the circuit formed on the object to be processed by preventing the surface of the object to be charged from being charged.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0015]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the semiconductor manufacturing method of the present invention, an object to be processed is processed using plasma, and a processing gas is supplied into a vacuum processing container for processing the object to be processed, and the vacuum processing container is processed. The inside of the chamber is evacuated to form a vacuum atmosphere, the plasma is generated inside the vacuum processing container, and when the object to be processed is processed using the plasma, the object to be processed is near the object to be processed. The object to be processed is processed by applying a positive voltage to a conductive member that is placed in contact with the object to be processed.

Further, the semiconductor manufacturing apparatus of the present invention performs processing such as film formation on an object to be processed using plasma, and a vacuum processing container capable of being shielded from the outside and forming a vacuum atmosphere inside. Vacuum evacuation means for evacuating the inside of the vacuum processing container, gas supply means for supplying a processing gas into the vacuum processing container, a sample stage for supporting the object to be processed, and plasma generation for generating the plasma Means and
The object to be processed is provided with a conductive member provided in the vicinity of the object to be processed in a non-contact manner with the object to be processed, and a voltage applying unit for applying a positive voltage to the conductive member. At that time, a positive voltage is applied to the conductive member to perform the treatment.

As a result, the electrons emitted from the plasma can be retained (trapped) in the conductive member, so that the surface of the object to be processed can be prevented from being charged and the electrons can be prevented from entering the object to be processed. it can.

As a result, the circuit formed on the object to be processed can be prevented from being destroyed by the electrons.

Further, in the semiconductor manufacturing apparatus of the present invention, the conductive member is a ring-shaped member surrounding the outer peripheral portion of the object to be processed.

Further, in the semiconductor manufacturing apparatus of the present invention, the plasma generating means is a counter electrode installed to face the sample stage, and the target material provided on the counter electrode is a semiconductor wafer to be processed. The semiconductor wafer is subjected to film formation by sputtering.

[0022]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a conceptual diagram showing an example of an embodiment of a structure of a sputtering apparatus which is a semiconductor manufacturing apparatus of the present invention, and FIG. 2 is a conductive member installed in the semiconductor manufacturing apparatus (sputtering apparatus) of the present invention. FIG. 4A is a plan view, FIG. 3B is a cross-sectional view thereof, and FIG. 3 is a wafer in process formation using the semiconductor manufacturing apparatus (sputtering apparatus) of the present invention. FIG. 4 is a partial sectional view showing an example of an embodiment of the processing, FIG. 4 is a partial sectional view showing an example of an embodiment of the wafer processing in the process formation using the semiconductor manufacturing apparatus (sputtering apparatus) of the present invention, and FIG. It is a fragmentary sectional view showing an example of an embodiment of wafer processing in process formation using a semiconductor manufacturing device (sputtering device) of the invention.

In the semiconductor manufacturing apparatus according to this embodiment, the inside 2a of a chamber 2 which is a vacuum processing container for a semiconductor wafer 1 which is an object to be processed and which is formed of silicon or the like.
The semiconductor wafer 1 is processed by using the plasma 3 generated in the inside 2a.
A sputtering apparatus for performing the film forming process (sputtering process) will be described below.

The structure of the sputtering apparatus is as follows:
A chamber (vacuum processing container) 2 that is isolated from the chamber 5 and can form a vacuum atmosphere in the interior 2a, a vacuum pump 4 that is a vacuum exhaust unit that exhausts the interior 2a of the chamber 2, and an argon gas in the interior 2a of the chamber 2. A gas supply means 6 for supplying a processing gas (also referred to as a process gas) 5, a holder 7 that is a sample stage that supports the semiconductor wafer 1, a plasma generation means that generates plasma 3, and a holder 7
A counter electrode (also referred to as a cathode) 8 that is installed to face
And a first shield member 10 which is a conductive member provided in the vicinity 9 of the semiconductor wafer 1 without contacting the semiconductor wafer 1.
And a first power supply 11 which is a voltage applying means for applying a positive voltage to the first shield member 10, and when the semiconductor wafer 1 is subjected to a film forming process, the first power supply 11 applies a positive voltage to the first shield member 10. A film is formed on the semiconductor wafer 1 by applying a voltage.

In the sputtering apparatus according to this embodiment, the holder 7 which is also an anode is an anode, and the holder 7 is electrically connected to a ground (ground) 12 which is a ground.

Further, the counter electrode 8 is a cathode, and the counter electrode 8 is provided with a target material 8a such as tungsten. Further, the counter electrode 8 is electrically connected to a second power supply 13 that applies a DC voltage of about −400 V during the film formation process, and the second power supply 13 is a ground 12.
Is electrically connected to

Thus, during the film forming process, the target material 8a is sputtered (repelled) on the semiconductor wafer 1 to form a film on the semiconductor wafer 1.

Further, the holder 7 according to the present embodiment supports the back surface 1c of the semiconductor wafer 1, but the supporting method of the semiconductor wafer 1 here is only the support by vacuum evacuation (weak adsorption). , Clamp members, etc.
A member that comes into contact with the surface 1b of the semiconductor wafer 1 is not installed.

Further, the holder 7 has a ceramic heater 1 for heating the semiconductor wafer 1 from the back surface 1c during the film forming process.
4 and other heating means are installed, and the semiconductor wafer 1 at the time of the film forming process is heated to 200 ° C. by the ceramic heater 14.
It is heated up and down.

The chamber 2 is made of quartz or the like, and the second shield member 16 is attached to the inner wall 2b thereof. The second shield member 16 prevents the sputtered target material 8a from scattering and adhering to the inner wall 2b. Further, since the second shield member 16 is electrically connected to the ground 12 as an anode, it is emitted from the plasma 3. It also has a function of accelerating the attracted electrons 17 and attracting them to the ground 12.

The second shield member 16 is, for example,
It is formed of a conductive material such as stainless steel or titanium, and its shape may be an integral type substantially along the inner wall 2b as long as it covers and protects the inner wall 2b of the chamber 2. The second shield member 16 may be divided into a plurality of pieces, and these second shield members 16 are attached to the inner wall 2b of the chamber 2.

Further, the first shield member 10 (conductive member) according to the present embodiment is also an anode formed of a conductive material such as stainless steel or titanium, like the second shield member 16, and , Semiconductor wafer 1
Is installed in the vicinity 9 of the semiconductor wafer 1 in a non-contact state, and is attached to the inner wall 2b of the chamber 2.

Here, since the first shield member 10 is installed in the vicinity 9 of the semiconductor wafer 1, it may become hot. Therefore, it is preferably formed of titanium having heat resistance.

As shown in FIG. 2, the first shield member 10 according to the present embodiment is an integral ring-shaped member surrounding the outer peripheral portion 1a of the semiconductor wafer 1 shown in FIG. The inner peripheral portion 10a of the one shield member 10 is formed to have a size capable of maintaining a distance of about 1 cm from the outer peripheral portion 1a of the semiconductor wafer 1.

However, if the first shield member 10 is a member that is installed in the vicinity 9 of the semiconductor wafer 1 in a non-contact manner with the semiconductor wafer 1 and surrounds the outer peripheral portion 1a of the semiconductor wafer 1, it is not necessarily integral. It is not necessary to use a plurality of small first shield members 10 and the first shield member 10 may be installed so as to surround the outer peripheral portion 1a of the semiconductor wafer 1.

The first shield member 10 is also the same as the second shield member 16, and the sputtered target material 8a.
Has a function of preventing the particles from scattering and adhering to the inner wall 2b. Further, since it is also an anode, it accelerates the electrons 17 emitted from the plasma 3.

A first power supply 11 for applying a positive voltage to the first shield member 10 is connected to the first shield member 10 according to this embodiment.

Therefore, when the film forming process is performed on the semiconductor wafer 1, the first power supply 11 causes the first shield member 10 to operate.
By applying a positive voltage to the first shield member 10
Can be charged with a + charge.

The first power source 11 is connected to the ground 12.

Further, the chamber 2 is provided with a gate valve 18 capable of loading and unloading the semiconductor wafer 1 while maintaining a vacuum atmosphere in the interior 2a.

Next, a semiconductor manufacturing method of this embodiment, that is, a film forming method will be described.

Here, in the present embodiment, as an example of the film forming process, a case of forming a MOS (Metal Oxide Semiconductor) circuit shown in FIGS. 3 to 5 on the surface 1b of the semiconductor wafer 1 will be described.

First, as shown in FIG. 3, the base substrate 19
A first oxide film 20 such as SiO ₂ is grown on the polycrystalline silicon film 22, and a polycrystalline silicon film 22 forming a gate electrode 21 is further deposited on the first oxide film 20.

Thereafter, as shown in FIG. 4, a patterned second oxide film 23 such as SiO _{2 is formed} on the polycrystalline silicon film 22 by CVD (Chemical Vapor Deposition).
It is formed by a method or the like.

Further, a wiring hole 24, which is a contact hole, is formed in the second oxide film 23 by etching.

Subsequently, as shown in FIG. 5, wiring holes 24 are formed.
A tungsten film 25, which will be a wiring, is patterned and formed on the second oxide film 23 including the metal by sputtering.

At this time, the tungsten film 25 is formed by using the sputtering apparatus according to the present embodiment.

When performing a film forming process using the sputtering apparatus, first, the process gas 5 such as argon gas is supplied to the inside 2a of the chamber 2 by the gas supply means 6.

Further, while the processing gas 5 is being supplied, the inside 2a of the chamber 2 is evacuated by the vacuum pump 4 so that the inside 2a has a vacuum atmosphere of about 10 mTorr (a vacuum atmosphere is formed).

After that, the semiconductor wafer 1 is carried in through the gate valve 18, and the semiconductor wafer 1 is mounted on the holder 7.

At this time, the back surface 1c of the semiconductor wafer 1 is supported by the holder 7 by weak suction by vacuum evacuation.

Then, the counter electrode 8 is turned on by the second power source 13.
Then, a voltage of about -400 V is applied for about 40 seconds to generate plasma 3 between the counter electrode 8 of the semiconductor wafer 1 (plasma 3 is formed by plasma discharge).

As a result, the target material 8a such as tungsten provided on the counter electrode 8 is sputtered, and as a result, on the surface 1b of the semiconductor wafer 1, that is, on the second oxide film 23 formed on the semiconductor wafer 1. The tungsten film 25 can be formed.

During the sputtering, the tungsten film 25
When becomes an electrode and is charged, an electric field is applied to the gate electrode 21 through the vicinity of the wiring hole 24, and the gate electrode 21 is destroyed. In the sputtering apparatus according to the present embodiment, in order to prevent this, a voltage of about −400 V is applied to the counter electrode 8 by the second power supply 13, and at the same time, a positive voltage is applied to the first shield member 10 by the first power supply 11. Apply.

As a result, during the film forming process of the semiconductor wafer 1, the first shield member 10 can be charged with a positive charge.

As a result, the electrons 17 emitted from the plasma 3 can be retained (trapped) in the first shield member 10.

After the film formation, the voltage application to the counter electrode 8 and the first shield member 10 is stopped.

Here, the supply of the processing gas 5 to the inside 2a of the chamber 2 and the evacuation are continuously performed as it is, and the semiconductor wafer 1 on which the film formation is completed is gated while the vacuum atmosphere of the inside 2a is maintained. The semiconductor wafer 1 is carried out through the valve 18, and the next semiconductor wafer 1 is carried in again to perform a film forming process.

According to the semiconductor manufacturing method and apparatus of this embodiment, the following operational effects can be obtained.

That is, the first shield member 10 provided in the vicinity 9 of the semiconductor wafer 1 without contacting the semiconductor wafer 1.
And the first power supply 11 for applying a positive voltage to the first shield member 10, it is possible to apply a positive voltage to the first shield member 10 to perform processing when processing the semiconductor wafer 1. it can.

As a result, the electrons 17 emitted from the plasma 3 can be retained (trapped) in the first shield member 10, so that the surface 1b of the semiconductor wafer 1 can be prevented from being charged (charge up), and the electrons 17 can be prevented. Can be prevented from rushing into the semiconductor wafer 1.

As a result, the circuits formed on the semiconductor wafer 1 can be prevented from being destroyed by the electrons 17, so that the yield of the semiconductor wafer 1 can be improved.

Since the processing on the semiconductor wafer 1 is the sputtering processing for forming a film, the surface 1b of the semiconductor wafer 1 can be prevented from being charged during the sputtering processing, and the electrons 17 on the semiconductor wafer 1 can be prevented. Inrush can be prevented.

As a result, M formed on the semiconductor wafer 1
The destruction of the gate electrode 21 in the OS circuit or the like can be prevented, and the yield of the semiconductor wafer 1 can be improved.

Further, during the sputtering process, the first
Since the shield member 10 is a ring-shaped member that surrounds the outer peripheral portion 1a of the semiconductor wafer 1, the scattered target material 8a can be attached to the first shield member 10, and the target material 8a becomes the inner wall 2b of the chamber 2 or the like. Can be prevented from adhering to.

As a result, it is possible to reduce the possibility that the target material 8a adheres to the inner wall 2b of the interior 2a of the chamber 2 and then peels off to become a foreign matter, and as a result, the foreign matter is prevented from reattaching to the semiconductor wafer 1. Therefore, the yield of the semiconductor wafer 1 can be improved.

Further, since the first shield member 10 is provided in non-contact with the semiconductor wafer 1, no other member is in contact with the surface 1b of the semiconductor wafer 1, which causes contact with the semiconductor wafer 1. It is possible to prevent the generation of foreign matter.

As a result, the yield of semiconductor wafer 1 can be improved.

Although the invention made by the present inventor has been specifically described based on the embodiments of the invention, the invention is not limited to the embodiments of the invention, and does not depart from the gist of the invention. It goes without saying that various changes can be made with.

For example, in the semiconductor manufacturing apparatus (sputtering apparatus) according to the above embodiment, the conductive member is installed in the vicinity of the object to be processed in a non-contact state with the object to be processed,
Further, the conductive member surrounds the outer peripheral portion of the object to be processed, but the conductive member always surrounds the object to be processed if it is installed in the vicinity of the object to be processed in a non-contact manner. The first shield member 10, which is a conductive member, may be provided so as to face the surface 1b of the semiconductor wafer 1, which is the object to be processed, as in the sputtering apparatus according to another embodiment shown in FIG. A plurality of through small holes 26 may be provided in the mesh-shaped conductive member, that is, the plate-shaped first shield member 10, which is a plate-shaped member.

That is, the plate-shaped first shield member 10 having a plurality of through small holes 26 is provided between the semiconductor wafer 1 and the counter electrode 8 and the target material 8a penetrates during sputtering. A film is formed by passing through the small holes 26 and adhering to the semiconductor wafer 1. The plate-shaped first shield member 10 has a thickness of, for example, about 1 cm.

In this case as well, similar to the sputtering apparatus according to the above-mentioned embodiment, the plate-shaped first shield member 1 is used.
0 is attached to the inner wall 2b of the chamber 2 and the like, and the first power source 11 as a voltage applying means is connected to the first shield member 10, so that the first power source 11 shields the first shield during film formation processing. It is possible to apply a positive voltage to the member 10.

As a result, the electrons 17 emitted from the plasma 3 can be retained (trapped) in the first shield member 10, and as a result, the surface 1 of the semiconductor wafer 1 can be obtained.
Since the charge-up in b can be prevented,
Can be prevented from rushing into the semiconductor wafer 1.

Further, the conductive member provided in the sputtering apparatus according to the above-mentioned embodiment is an integral ring-shaped member that surrounds the outer peripheral portion of the object to be processed. If it is installed in the vicinity of the object without contacting the object to be processed, it does not necessarily have to be an integral type, and like the conductive member of another embodiment shown in FIG. Shield member 10 which is a conductive member of
However, it may be installed so as to surround the outer peripheral portion 1a of the semiconductor wafer 1 shown in FIG.

Also in this case, the same effects as those of the sputtering apparatus of the above-mentioned embodiment can be obtained.

The vacuum processing container in the semiconductor manufacturing apparatus (sputtering apparatus) may be made of ceramic other than quartz.

Further, the semiconductor manufacturing apparatus may be a magnetron type sputtering apparatus or the like, and if it is a semiconductor manufacturing apparatus for processing an object to be processed by using plasma in a vacuum processing container, the sputtering apparatus may be used. Other than plasma etching equipment and plasma CVD (Chemic
al Vapor Deposition) device or the like.

[0079]

Advantageous effects obtained by typical ones of the inventions disclosed by the present application will be briefly described as follows.
It is as follows.

(1). By providing a conductive member provided in the vicinity of the object to be processed in a non-contact manner with the object to be processed and a voltage applying means for applying a positive voltage to the electrically conductive member, the object to be processed is electrically conductive when the object to be processed is treated. The positive member can be applied with a positive voltage for processing. Thereby, the electrons emitted from the plasma can be retained in the conductive member, so that the surface of the object to be processed can be prevented from being charged and the electrons can be prevented from entering the object to be processed. As a result, the circuit formed on the object to be processed can be prevented from being destroyed by electrons, so that the yield of the object to be processed can be improved.

(2). Since the processing of the object to be processed is the sputtering processing for forming the film on the semiconductor wafer,
It is possible to prevent electrification of the surface of the semiconductor wafer during the sputtering process, and to prevent electrons from entering the semiconductor wafer. As a result, it is possible to prevent breakage of the gate electrode such as the MOS circuit formed on the semiconductor wafer and improve the yield of the semiconductor wafer.

(3). During the sputtering process, since the conductive member is a ring-shaped member that surrounds the outer peripheral portion of the semiconductor wafer, the scattered target material can be attached to the conductive member, and the target material is the inner wall of the vacuum processing container or the like. Can be prevented from adhering to. by this,
After the target material adheres to the inner wall in the vacuum processing container, it can be reduced that the foreign material is peeled off and becomes a foreign material, and as a result, the foreign material can be prevented from being redeposited on the semiconductor wafer, so that the yield of the semiconductor wafer can be improved. it can.

(4). Since the conductive member is provided in non-contact with the object to be processed, there is no other member in contact with the surface of the object to be processed, so that it is possible to prevent generation of foreign matter due to contact with the object to be processed. it can.

[Brief description of the drawings]

FIG. 1 is a structural conceptual diagram showing an example of an embodiment of a structure of a sputtering apparatus which is a semiconductor manufacturing apparatus of the present invention.

2A and 2B are diagrams showing an example of an embodiment of a structure of a conductive member installed in a semiconductor manufacturing apparatus (sputtering apparatus) of the present invention, (a) is a plan view thereof, and (b) is a sectional view thereof. Is.

FIG. 3 is a partial cross-sectional view showing an example of an embodiment of wafer processing in process formation using the semiconductor manufacturing apparatus (sputtering apparatus) of the present invention.

FIG. 4 is a partial cross-sectional view showing an example of an embodiment of wafer processing in process formation using the semiconductor manufacturing apparatus (sputtering apparatus) of the present invention.

FIG. 5 is a partial cross-sectional view showing an example of an embodiment of wafer processing in process formation using the semiconductor manufacturing apparatus (sputtering apparatus) of the present invention.

FIG. 6 is a structural conceptual diagram showing an example of the structure of a semiconductor manufacturing apparatus (sputtering apparatus) according to another embodiment of the present invention.

FIG. 7 is a plan view showing an example of a structure of a conductive member installed in a semiconductor manufacturing apparatus (sputtering apparatus) according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer (object to be processed) 1a Outer peripheral portion 1b Front surface 1c Back surface 2 Chamber (vacuum processing container) 2a Inside 2b Inner wall 3 Plasma 4 Vacuum pump (vacuum exhausting means) 5 Processing gas 6 Gas supply means 7 Holder (sample stage) 8 Counter electrode (plasma generating means) 8a Target material 9 vicinity 10 First shield member (conductive member) 10a Inner peripheral portion 11 First power source (voltage applying means) 12 Ground 13 Second power source 14 Ceramic heater 15 External 16 Second shield Member 17 Electron 18 Gate valve 19 Base substrate 20 First oxide film 21 Gate electrode 22 Polycrystalline silicon film 23 Second oxide film 24 Wiring hole 25 Tungsten film 26 Through small hole

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshio Miyama 5-22-1 Kamisuihoncho, Kodaira-shi, Tokyo Inside Hitachi Microcomputer System Co., Ltd.

Claims (7)

[Claims] 1. A semiconductor manufacturing method for processing an object to be processed using plasma, comprising supplying a processing gas into a vacuum processing container for processing the object and evacuating the inside of the vacuum processing container. To form a vacuum atmosphere, to generate the plasma inside the vacuum processing container, when processing the object to be processed using the plasma,
A semiconductor manufacturing method, wherein a positive voltage is applied to a conductive member installed in the vicinity of the object to be processed so as not to contact the object to be processed, to process the object to be processed. 2. The method for manufacturing a semiconductor according to claim 1, wherein the object to be processed is a semiconductor wafer, and the target material on the counter electrode is provided so as to face a sample table supporting the semiconductor wafer. A method of manufacturing a semiconductor, wherein a film forming process is performed on the semiconductor wafer by sputtering the semiconductor wafer. 3. A semiconductor manufacturing apparatus for performing processing such as film formation on an object to be processed using plasma, the vacuum processing container being shielded from the outside and capable of forming a vacuum atmosphere inside the vacuum processing container. A vacuum evacuation means for exhausting the inside of the chamber, a gas supply means for supplying a processing gas into the vacuum processing container, a sample stage for supporting the object to be processed, a plasma generation means for generating the plasma, A conductive member provided in the vicinity of the object to be processed in a non-contact manner with the object to be processed, and a voltage applying means for applying a positive voltage to the electrically conductive member, when performing the process on the object to be processed. In the semiconductor manufacturing apparatus, a positive voltage is applied to the conductive member to perform processing. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the conductive member is a member that surrounds an outer peripheral portion of the object to be processed. 5. The semiconductor manufacturing apparatus according to claim 3 or 4, wherein the conductive member is a ring-shaped member that surrounds an outer peripheral portion of the object to be processed. 6. The semiconductor manufacturing apparatus according to claim 3, wherein the conductive member is a plate-shaped member provided to face the surface of the object to be processed, and the plate-shaped conductive member is A semiconductor manufacturing apparatus having a plurality of through holes. 7. The semiconductor manufacturing apparatus according to claim 3, 4, 5 or 6, wherein the plasma generating means is a counter electrode installed to face the sample stage, and the plasma generating means is provided on the counter electrode. A semiconductor manufacturing apparatus, wherein a target material is sputtered on a semiconductor wafer as an object to be processed, and a film forming process is performed on the semiconductor wafer.