JPH01179786A - Liquid phase epitaxy device - Google Patents
Liquid phase epitaxy deviceInfo
- Publication number
- JPH01179786A JPH01179786A JP97588A JP97588A JPH01179786A JP H01179786 A JPH01179786 A JP H01179786A JP 97588 A JP97588 A JP 97588A JP 97588 A JP97588 A JP 97588A JP H01179786 A JPH01179786 A JP H01179786A
- Authority
- JP
- Japan
- Prior art keywords
- ampoule
- substrate
- epitaxial growth
- tube
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004943 liquid phase epitaxy Methods 0.000 title abstract 2
- 239000003708 ampul Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000012010 growth Effects 0.000 claims description 49
- 239000007791 liquid phase Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- 238000000407 epitaxy Methods 0.000 abstract 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 210000001142 back Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要）
液相エピタキシャル成長装置に関し、
溶融したエピタキシャル成長用材料が支持部材の底部よ
り流出して基板下の溶融した材料の分量が変動するのを
防止するのを目的とし、支持板上に保持されたエピタキ
シャル成長用基板を保持し、上下に分割され、エピタキ
シャル成長材料を収容する凹部を設けた支持部材と、該
支持部材を収容するアンプルとよりなるエピタキシャル
成長装置であって、
前記基板を設置した支持部材とエピタキシャル成長材料
とを予め挿入する有底管を設け、前記有底管に基板を設
置した支持部材とエピタキシャル成長材料を予め収容し
た状態で、前記有底管をアンプル内に挿入し、該アンプ
ルを封止したことで構成する。[Detailed Description of the Invention] [Summary] Regarding a liquid phase epitaxial growth apparatus, the purpose of this invention is to prevent molten epitaxial growth material from flowing out from the bottom of a support member and fluctuating the amount of molten material under a substrate. , an epitaxial growth apparatus comprising a support member that holds an epitaxial growth substrate held on a support plate, is divided into upper and lower parts, and is provided with a recess for accommodating an epitaxial growth material; and an ampoule that accommodates the support member, A bottomed tube is provided into which a support member with a substrate installed and an epitaxial growth material are inserted in advance, and the bottomed tube is inserted into an ampoule with the support member with a substrate installed and the epitaxial growth material accommodated in the bottomed tube in advance. and the ampoule is sealed.
本発明は液相エピタキシャル成長装置に係り、特に傾斜
型液相エピタキシャル成長装置に関する。The present invention relates to a liquid phase epitaxial growth apparatus, and more particularly to a tilted liquid phase epitaxial growth apparatus.
赤外線検知素子の材料としては、エネルギーバンドギャ
ップの狭い水銀・カドミウム・テルルのような化合物半
導体基板が用いられている。Compound semiconductor substrates such as mercury, cadmium, and tellurium, which have narrow energy band gaps, are used as materials for infrared sensing elements.
この水銀・カドミウム・テルルは、水銀が非常に蒸発し
易い元素であるので、この化合物半導体結晶を組成の変
動が生じないように形成するために、装置構成が簡単な
傾斜型液相エピタキシャル成長装置が用いられている。Since mercury, cadmium, and tellurium are elements that evaporate very easily, a tilted liquid phase epitaxial growth device with a simple device configuration is used to form compound semiconductor crystals without causing compositional fluctuations. It is used.
第２図は従来の液相エピタキシャル成長装置の断面図で
、図示するように一端Ａが有底のアンプル１内には、円
柱状で中央部に凹部２を有し、支持板３とエピタキシャ
ル成長用基板４を積層して設置するための溝５が設けら
れ、中央でアンプル１の管軸方向に沿って点線６で示す
ように二分割される支持部材７が挿入され、該支持部材
７の凹部２にエピタキシャル成長用材料８が収容され、
該アンプル１の他端部Ｂは、アンプル内を排気後封止さ
れている。FIG. 2 is a cross-sectional view of a conventional liquid phase epitaxial growth apparatus. As shown in the figure, an ampoule 1 with a bottomed end A has a cylindrical shape and a recess 2 in the center, and a supporting plate 3 and an epitaxial growth substrate. A support member 7 which is divided into two along the tube axis direction of the ampoule 1 as shown by a dotted line 6 is inserted in the center, and a recess 2 of the support member 7 is provided. The epitaxial growth material 8 is housed in the
The other end B of the ampoule 1 is sealed after the inside of the ampoule is evacuated.
上記基板４とエピタキシャル成長用材料８を収容したア
ンプル１を加熱炉内の炉芯管の内部に挿入した後、加熱
炉を加熱してアンプル１内のエピタキシャル成長用材料
を溶融する。After the ampoule 1 containing the substrate 4 and the epitaxial growth material 8 is inserted into a core tube in a heating furnace, the heating furnace is heated to melt the epitaxial growth material in the ampoule 1.
次いでアンプル１を矢印Ｃ方向に１８０度回転させ、凹
部２が下になってその中で溶融したエピタキシャル成長
用材料８に基板４を接触させ、加熱炉の温度を所定の温
度勾配で降下させて基板上にエピタキシャル結晶を形成
している。Next, the ampoule 1 is rotated 180 degrees in the direction of arrow C, and the substrate 4 is brought into contact with the epitaxial growth material 8 melted therein with the recess 2 facing downward, and the temperature of the heating furnace is lowered at a predetermined temperature gradient to remove the substrate. An epitaxial crystal is formed on top.
然し、このような従来の装置では、アンプル１と支持部
材７はいずれも石英ガラス製品で、アンプル１の内面に
支持部材７の外面が密着するように高精度に加工するこ
とは困難であり、そのためアンプル１の内面と支持部材
７の外面とが合致しておらず、第２図に示すように支持
部材７の底部より溶融したエピタキシャル成長用材料８
が漏れてアンプル１内に流出し、それによって基板と接
触すべきエピタキシャル成長用材料８の分量が減少し、
形成されるエピタキシャル結晶が所定の組成を有しない
問題点がある。However, in such a conventional device, both the ampoule 1 and the support member 7 are made of quartz glass, and it is difficult to process them with high precision so that the outer surface of the support member 7 is in close contact with the inner surface of the ampoule 1. Therefore, the inner surface of the ampoule 1 and the outer surface of the support member 7 do not match, and as shown in FIG. 2, the epitaxial growth material 8 melts from the bottom of the support member 7.
leaks and flows into the ampoule 1, thereby reducing the amount of epitaxial growth material 8 that should be in contact with the substrate,
There is a problem that the epitaxial crystal that is formed does not have a predetermined composition.
更に甚だしい場合には、アンプル１を回転した場合、基
板４の下のエピタキシャル成長材料８の分量が減少し、
基板とエピタキシャル成長用材料が接触しない問題点を
生じる。In even more severe cases, when the ampoule 1 is rotated, the amount of epitaxial growth material 8 under the substrate 4 decreases,
A problem arises in that the substrate and the epitaxial growth material do not come into contact with each other.
本発明は上記した問題点を解決し、溶融したエピタキシ
ャル成長用材料に十分確実に基板が接触するようにした
エピタキシャル成長装置の提供を目的とする。An object of the present invention is to solve the above-mentioned problems and to provide an epitaxial growth apparatus in which a substrate can sufficiently reliably come into contact with a molten epitaxial growth material.
上記問題点を解決する本発明の液相エピタキシャル成長
装置は、第１図に示すようにエピタキシャル成長用基板
４を設置した支持部材７とエピタキシャル成長材料８と
を予め挿入する有底管１１を設け、前記有底管１１に基
板４を設置した支持部材７とエピタキシャル成長材料８
を予め収容した状態で、前記有底管１１をアンプル１内
に挿入し、該アンプル１を封止したことで構成する。The liquid phase epitaxial growth apparatus of the present invention which solves the above problems is provided with a bottomed tube 11 into which a supporting member 7 on which an epitaxial growth substrate 4 is installed and an epitaxial growth material 8 are inserted in advance, as shown in FIG. Support member 7 with substrate 4 installed in bottom tube 11 and epitaxial growth material 8
The bottomed tube 11 is inserted into the ampoule 1 in a state in which the ampoule 1 is previously housed, and the ampoule 1 is sealed.
本発明のエピタキシャル成長方法は、支持部材７を直接
アンプル１で封止する代わりに、予め支持部材７に対し
て高精度に密着する有底管１１を用いて、この有底管１
１の内部に支持部材７と共にエピタキシャル成長用材料
８を挿入した後、該有底管１１をアンプル１内に封入す
る。この有底管１１はエピタキシャル成長後は固化した
エピタキシャル成長用材料７は有底管１１に対して引つ
つくことなく、容易に離れるため、多数回のエピタキシ
ャル成長に使用できる。また有底管１１は個々の支持部
材７に対して高精度に密着するものを予め選択しておけ
ば、有底管と支持部材を常に一対として多数回ノエビタ
キシャル成長に使用できるので、密着の精度もアンプル
に比して優れた状態で加工できる。In the epitaxial growth method of the present invention, instead of directly sealing the support member 7 with the ampoule 1, a bottomed tube 11 that is in close contact with the support member 7 with high precision is used.
After inserting the epitaxial growth material 8 together with the support member 7 into the ampoule 1, the bottomed tube 11 is sealed in the ampoule 1. After epitaxial growth, this bottomed tube 11 can be used for multiple epitaxial growths because the solidified epitaxial growth material 7 is easily separated from the bottomed tube 11 without being stuck. In addition, if the bottomed tube 11 is selected in advance to be in close contact with each supporting member 7 with high precision, the bottomed tube and the supporting member can always be used as a pair for multiple noebitaxial growths, so that the close contact can be made. It can also be processed with better precision than ampules.
そのため、この精度の大きい有底管１１と支持部材７を
使用すると支持部材７の底部より溶融したエピタキシャ
ル成長材料８が漏れて流出することがなくなり、溶融し
たエピタキシャル成長材料に−６〜
充分基板が接触するので安定した組成のエピタキシャル
結晶が得られる。Therefore, if the bottomed tube 11 and support member 7 with high precision are used, the molten epitaxial growth material 8 will not leak and flow out from the bottom of the support member 7, and the substrate will be in sufficient contact with the molten epitaxial growth material. Therefore, an epitaxial crystal with a stable composition can be obtained.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の液相エピタキシャル成長装置の断面図
である。FIG. 1 is a sectional view of the liquid phase epitaxial growth apparatus of the present invention.
図示するように、本発明の装置が従来の装置と異なる点
は、基板４と支持板３を設置した支持部材７をエピタキ
シャル成長用材料８と共に有底管１１に挿入した状態で
アンプル１の内部に封入した点にある。この有底管１１
はアンプル１のように加熱して封止加工する必要がなく
、多数回のエピタキシャル成長に使用できるため、予め
個々の支持部材７に対して高精度に密着するものを選び
、このを腹背と支持部材とを一対として用いれば、アン
プルに比して精度が向上する。そのため、支持部材７の
外面と有底管１１の内面とは確実に密着して接触するの
で、従来の装置に於けるように支持部材７の底部より溶
融したエピタキシャル成長用材料８が漏れて流出して、
支持部材７の凹部２内のエピタキシャル成長用材料８の
分量が減少することが無くなり、基板４と溶融したエピ
タキシャル成長用材料８とは確実に接触するようになり
、組成変動の生じない高品質のエピタキシャル結晶が得
られる。As shown in the figure, the apparatus of the present invention is different from conventional apparatuses in that a support member 7 on which a substrate 4 and a support plate 3 are installed is inserted into a bottomed tube 11 together with an epitaxial growth material 8. It is in the enclosed point. This bottomed tube 11
Since the ampoule 1 does not need to be heated and sealed like the ampoule 1 and can be used for multiple epitaxial growths, it is necessary to select in advance an ampule that will adhere to each support member 7 with high precision, and then attach it to the ventral dorsum and support member 7. If these are used as a pair, accuracy will be improved compared to using an ampoule. Therefore, the outer surface of the support member 7 and the inner surface of the bottomed tube 11 are in close contact with each other, so that the molten epitaxial growth material 8 does not leak from the bottom of the support member 7 and flow out, unlike in conventional devices. hand,
The amount of the epitaxial growth material 8 in the recess 2 of the support member 7 no longer decreases, and the substrate 4 and the molten epitaxial growth material 8 are in reliable contact with each other, resulting in high-quality epitaxial crystals without compositional fluctuations. is obtained.
以上の説明から明らかなように本発明によれば、基板に
接触すべき溶融したエピタキシャル成長用材料が支持部
材の底部より漏れて流出する事がなくなるので、基板と
エピタキシャル成長用材料が確実に接触し、安定した高
品位のエピタキシャル結晶が得られる効果がある。As is clear from the above description, according to the present invention, the molten epitaxial growth material that should be in contact with the substrate will not leak out from the bottom of the support member, so the substrate and the epitaxial growth material will surely come into contact with each other. This has the effect of providing stable, high-quality epitaxial crystals.
第１図は本発明の液相エピタキシャル成長装置の一実施
例の断面図、
第２図は従来の液相エピタキシャル成長装置の断面図で
ある。
図において、
１はアンプル、２は凹部、３は支持板、４は基板、５は
溝、７は支持部材、８はエピタキシャル不杯口Ｈめ舊償
。断面口
第１図
挺ｔｐＩ較デ、ｒ面図
第２図FIG. 1 is a sectional view of an embodiment of the liquid phase epitaxial growth apparatus of the present invention, and FIG. 2 is a sectional view of a conventional liquid phase epitaxial growth apparatus. In the figure, 1 is an ampoule, 2 is a recess, 3 is a support plate, 4 is a substrate, 5 is a groove, 7 is a support member, and 8 is an epitaxial hole H hole. Cross-sectional opening Figure 1 Comparison of tpI, r-view Figure 2
Claims (1)
板（４）を保持し、上下に分割され、エピタキシャル成
長材料（８）を収容する凹部（２）を設けた支持部材（
７）と、該支持部材（７）を収容するアンプル（１）と
よりなるエピタキシャル成長装置であって、 前記基板（４）を設置した支持部材（７）とエピタキシ
ャル成長材料（８）とを予め挿入する有底管（１１）を
設け、前記有底管（１１）に基板（４）を設置した支持
部材（７）とエピタキシャル成長材料（８）を予め収容
した状態で、前記有底管（１１）をアンプル（１）内に
挿入し、該アンプル（１）を封止したことを特徴とする
液相エピタキシャル成長装置[Claims] A support member (2) that holds an epitaxial growth substrate (4) held on a support plate (3), is divided into upper and lower parts, and is provided with a recess (2) for accommodating an epitaxial growth material (8).
7) and an ampoule (1) accommodating the support member (7), wherein the support member (7) on which the substrate (4) is installed and the epitaxial growth material (8) are inserted in advance. A bottomed tube (11) is provided, and the bottomed tube (11) is placed in a state in which the support member (7) with the substrate (4) installed and the epitaxial growth material (8) are housed in advance. A liquid phase epitaxial growth device, characterized in that it is inserted into an ampoule (1) and the ampoule (1) is sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP97588A JPH01179786A (en) | 1988-01-05 | 1988-01-05 | Liquid phase epitaxy device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP97588A JPH01179786A (en) | 1988-01-05 | 1988-01-05 | Liquid phase epitaxy device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01179786A true JPH01179786A (en) | 1989-07-17 |
Family
ID=11488616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP97588A Pending JPH01179786A (en) | 1988-01-05 | 1988-01-05 | Liquid phase epitaxy device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179786A (en) |
-
1988
- 1988-01-05 JP JP97588A patent/JPH01179786A/en active Pending
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