JPH0117809Y2 - - Google Patents
Info
- Publication number
- JPH0117809Y2 JPH0117809Y2 JP4219583U JP4219583U JPH0117809Y2 JP H0117809 Y2 JPH0117809 Y2 JP H0117809Y2 JP 4219583 U JP4219583 U JP 4219583U JP 4219583 U JP4219583 U JP 4219583U JP H0117809 Y2 JPH0117809 Y2 JP H0117809Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- grid electrode
- image pickup
- photoconductive film
- pickup tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【考案の詳細な説明】 〔考案の技術分野〕 この考案は、撮像管の改良に関する。[Detailed explanation of the idea] [Technical field of invention] This invention relates to improvement of an image pickup tube.
従来、撮像管は第1図に示すように構成され、
有底簡状のガラス製真空外囲器5の開口端には、
面板構体4がインジウム金属層13を介して気密
封着され、このインジウム金属層13の外周部に
は非磁性体からなる金属リング14が圧接されて
信号電極15が形成されている。上記面板構体4
は、透明ガラス材などの透光材料からなる透明板
1の内面上にSnO2又はIn2O3等の透明導電膜2が
被着形成され、更にこの透明導電膜2上に
Sb2S3、CdSe等を主成分とする光導電膜3が被着
形成されてなつている。そして、この光導電膜3
に上記インジウム金属層13が電気的に接続され
ており、透明導電膜2上に映出された画像信号を
上記信号電極15を介して外部に取出す構成とな
つている。又、上記真空外囲器5内には、光導電
膜3側から網状電極6、加速及び集束電極となる
円筒電極7、第2グリツド電極8、第1グリツド
電極9、カソード10、及びヒータ11を同一軸
上に所定間隔で配列してなる電子銃構体12が収
納されている。更に真空外囲器5のステム部に
は、上記内部電極群にそれぞれ信号、電源を供給
する複数本の電極端子16が貫通植設され、その
中央部には真空外囲器5内を10-6〜10-7Torrの
高真空度に排気する排気部17が設けられてい
る。又、真空外囲器5の外周面側には、カソード
10から放射された電子ビーム18を集束、偏向
させる集束・偏向コイル19が配設されている。
Conventionally, an image pickup tube is configured as shown in FIG.
At the open end of the bottomed simple glass vacuum envelope 5,
The face plate structure 4 is hermetically sealed via an indium metal layer 13, and a metal ring 14 made of a non-magnetic material is pressed into contact with the outer periphery of the indium metal layer 13 to form a signal electrode 15. The above face plate structure 4
In this method, a transparent conductive film 2 such as SnO 2 or In 2 O 3 is deposited on the inner surface of a transparent plate 1 made of a transparent material such as transparent glass, and further on this transparent conductive film 2.
A photoconductive film 3 mainly composed of Sb 2 S 3 , CdSe, etc. is deposited thereon. And this photoconductive film 3
The indium metal layer 13 is electrically connected to the indium metal layer 13, and the image signal projected on the transparent conductive film 2 is taken out to the outside via the signal electrode 15. Further, inside the vacuum envelope 5, from the photoconductive film 3 side, there are a mesh electrode 6, a cylindrical electrode 7 serving as an acceleration and focusing electrode, a second grid electrode 8, a first grid electrode 9, a cathode 10, and a heater 11. An electron gun assembly 12 is housed in which the electron gun structures 12 are arranged on the same axis at predetermined intervals. Furthermore, a plurality of electrode terminals 16 are implanted through the stem portion of the vacuum envelope 5 to supply signals and power to the internal electrode groups, respectively . An exhaust section 17 is provided to evacuate to a high degree of vacuum of 6 to 10 -7 Torr. Further, a focusing/deflection coil 19 for focusing and deflecting the electron beam 18 emitted from the cathode 10 is disposed on the outer peripheral surface side of the vacuum envelope 5 .
このように構成された撮像管において、ヒータ
ー11により加熱されたカソード10から発生す
る電子ビーム18は、第1グリツド電極9により
ビーム量を制御され、第2グリツド電極8によつ
てビーム形状を整形され、更に円筒電極7により
加速・集束されて、集束・偏向コイル19との作
用により光導電膜3上に集束されて走査する。 In the image pickup tube configured as described above, the electron beam 18 generated from the cathode 10 heated by the heater 11 has its beam amount controlled by the first grid electrode 9, and the beam shape is shaped by the second grid electrode 8. The light is further accelerated and focused by the cylindrical electrode 7, and is focused and scanned on the photoconductive film 3 by the action of the focusing/deflection coil 19.
ところが上記のような撮像管においては、戻り
ビーム20が第2グリツド電極8に集束し、更に
反射して光導電膜3上に再入射するいわゆる疑似
信号を生じる。そこで従来、第2グリツド電極8
の表面を粗面にして戻りビーム20を乱反射させ
たり、第2図に示すように円筒電極7の途中に円
板状の電極反射防止板21を取付けて戻りビーム
20の集束点と反射点をずらせるなどの方法で、
面板構体4に疑似信号が生じるのを防いでいる。 However, in the above-mentioned image pickup tube, the return beam 20 is focused on the second grid electrode 8, and is further reflected to produce a so-called spurious signal that re-enters the photoconductive film 3. Therefore, conventionally, the second grid electrode 8
The surface of the cylindrical electrode 7 can be roughened to diffusely reflect the return beam 20, or a disk-shaped electrode anti-reflection plate 21 can be attached in the middle of the cylindrical electrode 7 to separate the focal point and reflection point of the return beam 20. By methods such as shifting the
This prevents false signals from occurring on the face plate structure 4.
ところで疑似信号をよく調べてみると、例えば
第3図に示すような真空外囲器5の側壁内面に導
電層よりなる2対の静電偏向電極22を設けた静
電偏向、電磁集束方式で電子ビームを走査させる
撮像管と、第1図に示した電磁偏向、電磁集束方
式及び電磁偏向、静電集束方式の撮像管では、疑
似信号の発生の様態が異なることが判つた。即
ち、静電偏向、電磁集束方式の撮像管の疑似信号
は、第4図に示すように、疑似信号像24の中央
付近に無疑似信号領域25が必ず存在することで
ある。この現像から言えることは、上記の戻りビ
ームが電極又はその他の物質に衝突することによ
つて電子の反射、2次電子放出等が疑似信号の原
因となり得るが、この領域に相応する場所に電極
又はその他の物質の不連続性もしくは形状変化が
あつても、疑似信号として映像中に現われないこ
とになる。そして、無疑似信号の領域は、経験的
には撮像管の光導電膜を走査する電子ビームの水
平走査距離の約1/2以下、垂直走査距離の約1/2以
下のほぼ矩形に近い。 By the way, when we carefully examine the pseudo signals, we find that, for example, as shown in FIG. It has been found that the manner in which pseudo signals are generated differs between an image pickup tube that scans an electron beam and an image pickup tube that uses an electromagnetic deflection, electromagnetic focusing method, and an electromagnetic deflection or electrostatic focusing method shown in FIG. That is, in the case of a pseudo signal from an image pickup tube using electrostatic deflection or electromagnetic focusing, a no-pseudo signal region 25 always exists near the center of a pseudo signal image 24, as shown in FIG. What can be said from this development is that reflection of electrons, secondary electron emission, etc. due to the return beam colliding with electrodes or other materials can cause false signals; Even if there are discontinuities or changes in shape of other substances, they will not appear in the image as false signals. Empirically, the area of no pseudo signals is approximately rectangular, approximately 1/2 or less of the horizontal scanning distance of the electron beam scanning the photoconductive film of the image pickup tube, and approximately 1/2 or less of the vertical scanning distance.
又、静電偏向、電磁集束方式の撮像管におい
て、光導電膜からの戻りビームに起因する疑似信
号の防止のために、無疑似信号領域に相応する場
所以外に、いかなる均一な電極を設けても、戻り
ビームの反射又は2次電子放出がある限り、無疑
似信号領域との映像上のコントラスト差により、
事実上第5図に示すごとく映像全体には支障を生
じる。従つて、第2図に示す方式での疑似信号防
止策では、静電偏向、電磁集束方式の撮像管にお
いては、その効果が不充分であると考えられる。 In addition, in an image pickup tube using electrostatic deflection or electromagnetic focusing, in order to prevent spurious signals caused by return beams from the photoconductive film, any uniform electrodes should not be provided in areas other than those corresponding to the non-pseudo signal area. However, as long as there is reflection of the return beam or secondary electron emission, due to the contrast difference on the image with the non-pseudo signal area,
In fact, as shown in FIG. 5, the entire image is disturbed. Therefore, the method shown in FIG. 2 for preventing false signals is considered to be insufficiently effective in electrostatic deflection and electromagnetic focusing type image pickup tubes.
この考案の目的は、戻りビームによる疑似信号
の発生を防止した撮像管を提供することである。
The purpose of this invention is to provide an image pickup tube that prevents the generation of false signals due to return beams.
この考案は、第2グリツド電極の出口側に、内
部空間横断面積が上記光導電膜上における電子ビ
ームの水平走査距離の約1/2以下、垂直走査距離
の約1/2以下の無疑似信号領域よりも小さく設定
され、長さが第2グリツド電極の最大径の1/2以
上に設定されている筒状電極を取付けた撮像管で
ある。
This device provides a non-pseudo signal on the exit side of the second grid electrode with an internal space cross-sectional area of approximately 1/2 or less of the horizontal scanning distance of the electron beam on the photoconductive film and approximately 1/2 or less of the vertical scanning distance. This image pickup tube is equipped with a cylindrical electrode that is set to be smaller than the area and whose length is set to be 1/2 or more of the maximum diameter of the second grid electrode.
この考案による静電偏向、電磁集束方式の撮像
管の要部は、第6図に示すように構成され、従来
例(第1図)と同一箇所は同一符号を付すことに
する。即ち、この考案では第2グリツド電極(リ
ミツテイングアパーチヤ電極)8の出口側(網状
電極側)に、筒状電極23が取付けられている。
この場合、第2グリツド電極8は入口側部分8a
と出口側部分8bとからなつているが、筒状電極
23は出口側部分8bに取付けられ、電気的に一
体化されている。又、筒状電極23は、その内部
空間横断面積が、光導電膜3上における電子ビー
ム18の水平走査距離の約1/2以下、垂直走査距
離の約1/2以下の無疑似信号領域よりも小さく設
定され、更にその長さは第2グリツド電極8の最
大径の1/2以上に設定されている。又、この考案
の撮像管は静電偏向方式のため、第1図のような
円筒電極7を設けず、真空外囲器5の側壁内面に
は、網状電極6から第2グリツド電極8附近まで
導電層からなる2対の静電偏向電極22が形成さ
れている。そして、図示していないが、真空外囲
器5の外周には集束コイルが配設されている。
尚、面板構体附近は第1図と同様構成ゆえ、図示
及び説明を省略してある。
The main parts of the electrostatic deflection and electromagnetic focusing image pickup tube according to this invention are constructed as shown in FIG. 6, and the same parts as in the conventional example (FIG. 1) are given the same reference numerals. That is, in this invention, a cylindrical electrode 23 is attached to the exit side (reticular electrode side) of the second grid electrode (limiting aperture electrode) 8.
In this case, the second grid electrode 8 has an inlet side portion 8a.
and an outlet side portion 8b, the cylindrical electrode 23 is attached to the outlet side portion 8b and electrically integrated therewith. Further, the cylindrical electrode 23 has an internal space cross-sectional area that is less than about 1/2 of the horizontal scanning distance of the electron beam 18 on the photoconductive film 3 and less than about 1/2 of the vertical scanning distance from a non-pseudo signal region. The diameter of the second grid electrode 8 is also set to be small, and its length is set to be at least 1/2 of the maximum diameter of the second grid electrode 8. Furthermore, since the image pickup tube of this invention is of an electrostatic deflection type, the cylindrical electrode 7 as shown in FIG. Two pairs of electrostatic deflection electrodes 22 made of conductive layers are formed. Although not shown, a focusing coil is disposed around the outer periphery of the vacuum envelope 5.
Incidentally, since the structure around the face plate structure is the same as that in FIG. 1, illustration and explanation are omitted.
さて、動作時には、第2グリツド電極8に筒状
電極23を取付け、その内部空間横断面積を無疑
似信号領域よりも小さく設定しているので、第7
図に示すような戻りビーム26と戻りビーム27
の影響では疑似信号は生じない。更に、筒状電極
23の長さは第2グリツド電極8の最大径の1/2
以上に設定されているので、第2グリツド電極8
の電圧Ec2が静電偏向電極22の電圧Edefより低
い場合は、第8図に示すように戻りビーム20は
真空外囲器5の方向に曲げられるため、集束点が
ずれて光導電膜3に疑似信号を生じない。又、逆
にEc2がEdefより高い場合は、第9図に示すよう
に筒状電極23の方向に曲げられるため、集束点
がずれて光導電膜3に疑似信号を生じなくなる。 Now, during operation, the cylindrical electrode 23 is attached to the second grid electrode 8, and its internal space cross-sectional area is set smaller than the non-pseudo signal area.
Return beam 26 and return beam 27 as shown
No spurious signals are generated under the influence of . Furthermore, the length of the cylindrical electrode 23 is 1/2 of the maximum diameter of the second grid electrode 8.
Since the setting is above, the second grid electrode 8
When the voltage Ec 2 is lower than the voltage Edef of the electrostatic deflection electrode 22, the return beam 20 is bent toward the vacuum envelope 5 as shown in FIG. does not generate spurious signals. On the other hand, when Ec 2 is higher than Edef, as shown in FIG. 9, the beam is bent in the direction of the cylindrical electrode 23, so that the focal point is shifted and no pseudo signal is generated on the photoconductive film 3.
尚、第8図及び第9図では、カソード10、ヒ
ータ11は省略してある。 Note that the cathode 10 and heater 11 are omitted in FIGS. 8 and 9.
この考案によれば、戻りビームによる疑似信号
の発生を防止することができ、画質の良い撮像管
が得られる。
According to this invention, generation of false signals due to return beams can be prevented, and an imaging tube with good image quality can be obtained.
尚、第10図はこの考案の変形例を示したもの
で、筒状電極24は第2グリツド電極8と完全に
一体形成されている。つまり上記実施例では、第
2グリツド電極8は入口側部分8aと出口側部分
8bとからなり、この出口側部分8bに筒状電極
23が取付けられていたが、この変形例では、筒
状電極24の一端は鍔状部24aとなり、この鍔
状部24aが第2グリツド電極8の出口側部分を
兼ねている。便宜上、第10図には、第1グリツ
ド9、カソード10、ヒータ11は省略してあ
る。 Incidentally, FIG. 10 shows a modification of this invention, in which the cylindrical electrode 24 is formed completely integrally with the second grid electrode 8. That is, in the above embodiment, the second grid electrode 8 consists of an inlet side part 8a and an outlet side part 8b, and the cylindrical electrode 23 is attached to this outlet side part 8b, but in this modification, the cylindrical electrode One end of 24 becomes a flange-shaped portion 24a, and this flange-shaped portion 24a also serves as the exit side portion of the second grid electrode 8. For convenience, the first grid 9, cathode 10, and heater 11 are omitted in FIG.
又、筒状電極23,24は光導電膜3上の無疑
似信号領域よりも小さな内部空間横断面積を有し
ていれば、その断面形状が円形だけに限らず、三
角形でも矩形でもかまわない。 Further, as long as the cylindrical electrodes 23 and 24 have an internal space cross-sectional area smaller than the non-pseudo signal area on the photoconductive film 3, the cross-sectional shape is not limited to a circle, but may be triangular or rectangular.
第1図は従来の撮像管を示す断面図、第2図は
同じく別の撮像管を示す断面図、第3図は静電偏
向電極の一例を示す斜視図、第4図は静電偏向、
電磁集束方式の撮像管における疑似信号を示す平
面図、第5図は静電偏向、電磁集束方式の撮像管
における疑似信号領域の場所以外に均一な電極を
設けた場合の疑似信号を示す平面図、第6図はこ
の考案の一実施例に係る撮像管を示す断面図、第
7図はこの考案で用いる筒状電極附近の戻りビー
ム軌道を示す断面図、第8図はEc2<Edefの場合
の戻りビーム軌道を示す断面図、第9図はEc2>
Edefの場合の戻りビーム軌道を示す断面図、第
10図はこの考案の変形例を示す断面図である。
1……面板、2……透明導電膜、3……光導電
膜、4……面板構体、5……真空外囲器、6……
網状電極、8……第2グリツド電極、9……第1
グリツド電極、10……カソード、11……ヒー
ター、18……電子ビーム、20……戻りビー
ム、22……静電偏向電極、23……筒状電極。
FIG. 1 is a sectional view showing a conventional image pickup tube, FIG. 2 is a sectional view showing another image pickup tube, FIG. 3 is a perspective view showing an example of an electrostatic deflection electrode, and FIG. 4 is a sectional view showing an electrostatic deflection electrode.
A plan view showing a pseudo signal in an image pickup tube using an electromagnetic focusing method. FIG. , FIG. 6 is a sectional view showing an image pickup tube according to an embodiment of this invention, FIG. 7 is a sectional view showing the return beam trajectory near the cylindrical electrode used in this invention, and FIG . 8 is a sectional view showing the return beam trajectory near the cylindrical electrode used in this invention. A cross-sectional view showing the return beam trajectory when Ec 2 >
A sectional view showing the return beam trajectory in the case of Edef, and FIG. 10 is a sectional view showing a modification of this invention. DESCRIPTION OF SYMBOLS 1... Face plate, 2... Transparent conductive film, 3... Photoconductive film, 4... Face plate structure, 5... Vacuum envelope, 6...
mesh electrode, 8... second grid electrode, 9... first
Grid electrode, 10... cathode, 11... heater, 18... electron beam, 20... return beam, 22... electrostatic deflection electrode, 23... cylindrical electrode.
Claims (1)
してなる面板構体を、有底筒状の真空外囲器の
開口端に気密封着し、更に真空外囲器内に上記
光導電膜側から網状電極、第2グリツド電極、
第1グリツド電極、カソード、ヒータを同軸的
に所定間隔で配設し、且つ真空外囲器の側壁内
面に静電偏向電極をほぼ上記網状電極から第2
グリツド電極にかけて形成してなる撮像管にお
いて、 上記第2グリツド電極の出口側に、内部空間
横断面積が上記光導電膜上における電子ビーム
の水平走査距離の約1/2以下、垂直走査距離の
約1/2以下の無疑似信号領域よりも小さく設定
され、長さが上記第2グリツド電極の最大径の
1/2以上に設定されている筒状電極を取付けた
ことを特徴とする撮像管。 (2) 上記筒状電極は、上記第2グリツド電極と一
体になつている実用新案登録請求の範囲第1項
記載の撮像管。[Scope of Claim for Utility Model Registration] (1) A face plate structure in which a transparent conductive film and a photoconductive film are sequentially formed on the inner surface of the face plate is hermetically sealed to the open end of a bottomed cylindrical vacuum envelope, and Inside the vacuum envelope, from the photoconductive film side, a mesh electrode, a second grid electrode,
A first grid electrode, a cathode, and a heater are disposed coaxially at predetermined intervals, and electrostatic deflection electrodes are arranged on the inner surface of the side wall of the vacuum envelope from the mesh electrode to the second grid electrode.
In the image pickup tube formed across the grid electrode, on the exit side of the second grid electrode, the internal space cross-sectional area is about 1/2 or less of the horizontal scanning distance of the electron beam on the photoconductive film and about the vertical scanning distance. An image pickup tube characterized in that a cylindrical electrode is attached which is set to be smaller than a non-pseudo signal area of 1/2 or less and whose length is set to be 1/2 or more of the maximum diameter of the second grid electrode. (2) The imaging tube according to claim 1, wherein the cylindrical electrode is integrated with the second grid electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4219583U JPS59148059U (en) | 1983-03-24 | 1983-03-24 | Image tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4219583U JPS59148059U (en) | 1983-03-24 | 1983-03-24 | Image tube |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59148059U JPS59148059U (en) | 1984-10-03 |
JPH0117809Y2 true JPH0117809Y2 (en) | 1989-05-24 |
Family
ID=30172753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4219583U Granted JPS59148059U (en) | 1983-03-24 | 1983-03-24 | Image tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59148059U (en) |
-
1983
- 1983-03-24 JP JP4219583U patent/JPS59148059U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59148059U (en) | 1984-10-03 |
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