JPH0355234Y2 - - Google Patents
Info
- Publication number
- JPH0355234Y2 JPH0355234Y2 JP1984146218U JP14621884U JPH0355234Y2 JP H0355234 Y2 JPH0355234 Y2 JP H0355234Y2 JP 1984146218 U JP1984146218 U JP 1984146218U JP 14621884 U JP14621884 U JP 14621884U JP H0355234 Y2 JPH0355234 Y2 JP H0355234Y2
- Authority
- JP
- Japan
- Prior art keywords
- grid electrode
- cathode
- image pickup
- restriction hole
- pickup tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 description 6
- 206010047571 Visual impairment Diseases 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Description
【考案の詳細な説明】
〔考案の技術分野〕
この考案は、電子ビームを形成する電子群の速
度分布の拡大を抑制した撮像管装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] This invention relates to an image pickup tube device that suppresses expansion of the velocity distribution of a group of electrons forming an electron beam.
従来、ビジコン型撮像管は第３図に示すように
構成され、有底筒状外囲器（省略）の開口端には
フエースプレート１６が封着され、このフエース
プレート１６の内面には光導電膜ターゲツト７が
形成されている。更に、上記外囲器内には、電子
銃が配設されている。即ち、外囲器の底部側か
ら、ヒーター２、陰極１、第１格子電極３、第２
格子電極４、収束電極５、メツシユ電極６が順次
所定間隔で同軸上に配設され、メツシユ電極６は
上記光導電膜ターゲツト７に対向している。更
に、上記外囲器の外側には、偏向コイル８及び集
束コイル９が配設されている。
Conventionally, a vidicon type image pickup tube is constructed as shown in FIG. A membrane target 7 is formed. Furthermore, an electron gun is disposed within the envelope. That is, from the bottom side of the envelope, the heater 2, the cathode 1, the first grid electrode 3, and the second
A grid electrode 4, a focusing electrode 5, and a mesh electrode 6 are disposed coaxially in sequence at predetermined intervals, and the mesh electrode 6 faces the photoconductive film target 7. Furthermore, a deflection coil 8 and a focusing coil 9 are arranged outside the envelope.
第４図は上記電子銃付近を拡大したもので、１
１及び１２はそれぞれ第１及び第２の制限孔であ
る。又、１３は第２の制御孔１２を通過してくる
電子軌道を示している。この第２の制限孔１２を
通過してくる電子ビームのビーム量を確保するた
めに、高い陰極負荷（陰極放出電流密度）にて動
作させている。 Figure 4 is an enlarged view of the area near the electron gun.
1 and 12 are first and second restriction holes, respectively. Further, 13 indicates an electron trajectory passing through the second control hole 12. In order to ensure the amount of electron beam passing through the second restriction hole 12, the device is operated at a high cathode load (cathode emission current density).
ところで、上記のような従来のビジコン型撮像
管では、被写体照度に対応した電荷パターンを光
導電膜ターゲツト７上に発生させ、電子銃から発
射した電子ビームで上記光導電膜ターゲツト７上
を走査することにより、被写体照度によつて生じ
た電荷パターンを放電し、この放電に対応した充
電電流を信号として取出している。 By the way, in the conventional vidicon type image pickup tube as described above, a charge pattern corresponding to the illuminance of the subject is generated on the photoconductive film target 7, and the photoconductive film target 7 is scanned with an electron beam emitted from an electron gun. As a result, the charge pattern generated by the illuminance of the object is discharged, and a charging current corresponding to this discharge is extracted as a signal.
光照射によつて生じた電荷は、上記の電子ビー
ムを一度走査することによつて完全に放電するこ
とはなく、光導電膜ターゲツト７上には走査によ
つて取り残された電荷が残り、これが次の走査時
に疑似信号として取出される。この疑似信号がビ
ジコン型撮像管においては、残像として現れる。 Charges generated by light irradiation are not completely discharged by scanning the electron beam once, and charges left behind by scanning remain on the photoconductive film target 7. It is extracted as a pseudo signal during the next scan. This pseudo signal appears as an afterimage in a vidicon type image pickup tube.
ビジコン型撮像管においては上記残像を決定す
る要素としては、光導電膜ターゲツト７の有する
静電容量と、走査ビームの有するビーム抵抗との
積で定まる時定数が主である。 In the vidicon type image pickup tube, the main factor determining the afterimage is a time constant determined by the product of the capacitance of the photoconductive film target 7 and the beam resistance of the scanning beam.
又、ビーム抵抗は電子ビームを形成する電子群
の速度分布と等価であり、速度分布の狭い電子ビ
ームが、上記残像を低下するための必要条件であ
る。 Furthermore, the beam resistance is equivalent to the velocity distribution of the electron group forming the electron beam, and an electron beam with a narrow velocity distribution is a necessary condition for reducing the above-mentioned afterimage.
本来、上記陰極１より放出された電子群の速度
分布は、陰極温度に依存し、マクスウエル分布に
従う。しかしながら、上記電子群を電子レンズに
て収束させた場合、電子群は電子密度が上昇し、
その結果、電子間のクローン相互作用により電子
群の速度分布は拡大する。 Originally, the velocity distribution of the electron group emitted from the cathode 1 depends on the cathode temperature and follows a Maxwellian distribution. However, when the above electron group is focused by an electron lens, the electron density of the electron group increases,
As a result, the velocity distribution of the electron group expands due to clonal interactions between electrons.
従つて、低残像を目的とする電子銃では、電子
ビームの電子密度上昇をできる限り抑える必要が
あり、陰極に対向する第１格子電極を陰極に対し
正電位で動作させる２極形電子銃が提案されてい
る。 Therefore, in an electron gun aiming at low image retention, it is necessary to suppress the increase in electron density of the electron beam as much as possible, and a two-pole electron gun is used in which the first grid electrode facing the cathode is operated at a positive potential with respect to the cathode. Proposed.
しかし、この２極形電子銃では、陰極から軸に
平行な電子を放出させ、クロスオーバを形成しな
い層流ビームを形成しているが、ビーム電流のダ
イナミツクレンジを広くするために、陰極にかな
りの高負荷をかけるか、あるいは高消費電力かつ
高価である含浸型陰極を使用する必要があつた。 However, in this bipolar electron gun, electrons are emitted parallel to the axis from the cathode to form a laminar beam that does not form a crossover. It was necessary to apply a fairly high load or to use an impregnated cathode, which consumes a lot of power and is expensive.
この考案の目的は、格子電極の構成を変更して
従来の電子銃を改善することにより、低電力かつ
安価な酸化物陰極を使用しながらも、ビーム電流
のダイナミツクレンジを低下させることなく低残
像化を実現できる撮像管装置を提供することであ
る。
The purpose of this invention is to improve the conventional electron gun by modifying the configuration of the grid electrode, thereby using a low-power and inexpensive oxide cathode while reducing the beam current without reducing the dynamic range. An object of the present invention is to provide an image pickup tube device that can realize afterimage formation.
この考案は、陰極に対して正の電圧が印加され
た第１格子電極及び第２格子電極により、ゆるや
かに収束された電子ビームが、第２の制限孔より
も下流にてその密度が最大となるようにし、電子
ビームの速度分布拡大を抑制しつつ、適正動作に
必要なビーム量を確保するようにした撮像管装置
である。
In this device, the electron beam, which is gently focused by the first grid electrode and the second grid electrode to which a positive voltage is applied to the cathode, reaches its maximum density downstream of the second restriction hole. This image pickup tube device secures the amount of beam necessary for proper operation while suppressing the expansion of the electron beam velocity distribution.
この考案は第１図に示すように構成され、従来
例と同一箇所は同一符号を付すことにする。
This invention is constructed as shown in FIG. 1, and the same parts as in the conventional example are given the same reference numerals.
即ち、陰極１に対して、第１の制限孔１１を有
する第１格子電極３、第２の制限孔１２を有する
第２格子電極４、及び収束電極５が順次所定間隔
で同軸上に配設されている。更に上記第２格子電
極４には、シールド円筒１４が下流方向に突設さ
れている。このシールド円筒１４は、陰極１から
光導電膜ターゲツトへ向う電子ビームを偏向領域
の所定位置まで直進させる（無偏向）ための円筒
である。尚、図中、１５は第２の制限孔１２を通
過してくる電子の軌道を示している。又、上記陰
極１は接地されると共に電源１７に接続され、上
記第１格子電極３は電源１７に接続され、上記第
２格子電極４は電源１８に接続され、上記収束電
極５は電源１９に接続されている。 That is, with respect to the cathode 1, a first grid electrode 3 having a first restriction hole 11, a second grid electrode 4 having a second restriction hole 12, and a focusing electrode 5 are sequentially arranged coaxially at predetermined intervals. has been done. Furthermore, a shield cylinder 14 is provided on the second grid electrode 4 to protrude in the downstream direction. This shield cylinder 14 is a cylinder for allowing the electron beam traveling from the cathode 1 toward the photoconductive film target to travel straight (without deflection) to a predetermined position in the deflection region. In the figure, 15 indicates the trajectory of electrons passing through the second restriction hole 12. Further, the cathode 1 is grounded and connected to a power source 17, the first grid electrode 3 is connected to the power source 17, the second grid electrode 4 is connected to a power source 18, and the focusing electrode 5 is connected to a power source 19. It is connected.
更に上記の場合、第１の制限孔１１の口径d1と
第２の制限孔１２の口径d2の比をd1／d2＝20とし、
第１格子電極３と第２格子電極４との間隔は第２
の制限孔１２の25倍とした。 Furthermore, in the above case, the ratio of the diameter d 1 of the first restriction hole 11 to the diameter d 2 of the second restriction hole 12 is d 1 /d 2 =20, and the first grid electrode 3 and the second grid electrode 4 are is the second interval
25 times that of the restriction hole 12.
又、上記シールド円筒１４の先端から上記第２
の制限孔１２の中心までの距離をl1とし、第２の
制限孔１２の中心から上記陰極１までの距離をl2
としたとき、l1／l2＝3.9〜5.6の範囲の値に設定され
ている。尚、この値の根拠は、第２図中のl1．l2
の寸法から産出したものである。 Also, from the tip of the shield cylinder 14 to the second
The distance from the center of the second restriction hole 12 to the center of the second restriction hole 12 is l 1 , and the distance from the center of the second restriction hole 12 to the cathode 1 is l 2
When, l 1 /l 2 is set to a value in the range of 3.9 to 5.6. The basis for this value is l 1 . in Figure 2. l 2
It was produced from the dimensions of.
そして上記l1，l2を含め各部品及び相互間の寸
法例を示すと、第２図のようになつている。 FIG. 2 shows an example of the dimensions of each component and each other, including the above-mentioned l 1 and l 2 .
動作時には、上記陰極１にはOV、上記第１格
子電極３には陰極１に対してＯ〜＋15Vの範囲の
電圧が印加される。又、上記第２格子電極４には
陰極１に対して＋50〜＋300Vの範囲の電圧が印
加され、第１格子電極３及び第２格子電極４にて
弱い収束電子レンズが形成される。更に、上記収
束電極５には＋300〜＋350Vの範囲の電圧が印加
されて、弱い発散電子レンズを形成し、電子群の
速度分布の拡大の抑制を行つている。電圧印加の
具体例をあげると、1/2インチ管の場合、第１格
子電極３は陰極に対して＋2.5V、第２格子電極
４は＋80V、収束電極５は＋80〜＋130V、2/3〜
１インチ管の場合、第１格子電極３は＋10〜＋
15V、第２格子電極４は＋250V、収束電極５は
＋300〜350Vである。 During operation, a voltage of OV is applied to the cathode 1, and a voltage in the range of 0 to +15V is applied to the first grid electrode 3 with respect to the cathode 1. Further, a voltage in the range of +50 to +300V is applied to the second grid electrode 4 with respect to the cathode 1, and a weak converging electron lens is formed by the first grid electrode 3 and the second grid electrode 4. Further, a voltage in the range of +300 to +350 V is applied to the converging electrode 5 to form a weak diverging electron lens, thereby suppressing the expansion of the velocity distribution of the electron group. To give a specific example of voltage application, in the case of a 1/2 inch tube, the first grid electrode 3 has +2.5V with respect to the cathode, the second grid electrode 4 has +80V, and the convergent electrode 5 has +80 to +130V, 2/3 ~
In the case of a 1-inch tube, the first grid electrode 3 is +10 to +
15V, the second grid electrode 4 has +250V, and the focusing electrode 5 has +300-350V.
さて、陰極１から放出された電子ビームは、第
１の制限孔１１から第２の制限孔１２へとゆるや
かに集束され、第２の制限孔１２を通過した後
に、第２格子電極孔１２に設けたシールド円筒１
４内にてクロスオーバを形成する。このように第
２格子電極４と同電位であるシールド円筒１４内
にてクロスオーバを形成することは、第２格子電
極４と更に下流に隣接する収束電極５との間に形
成される発散電子レンズの効果を遮蔽し、安定し
た電界中にて発散の少ないビームを得ることが可
能になる。又、このような軸上電位の低い位置に
てクロスオーバを形成することは、電子密度分布
の拡大を抑制する効果を有し、従つて低残像化に
適した電子速度分布の少ない、かつ十分な量の電
子ビームを得ることが可能となる。 Now, the electron beam emitted from the cathode 1 is gently focused from the first restriction hole 11 to the second restriction hole 12, and after passing through the second restriction hole 12, it enters the second grid electrode hole 12. Provided shield cylinder 1
4 to form a crossover. Forming a crossover in the shield cylinder 14 which has the same potential as the second grid electrode 4 in this way means that the divergent electrons formed between the second grid electrode 4 and the converging electrode 5 adjacent further downstream It becomes possible to shield the effect of the lens and obtain a beam with less divergence in a stable electric field. In addition, forming a crossover at a position where the axial potential is low has the effect of suppressing the expansion of the electron density distribution, and therefore the electron velocity distribution is small and sufficient to reduce image retention. It becomes possible to obtain a large amount of electron beam.
尚、この考案の撮像管装置は、上記以外は第３
図と同様構成ゆえ詳細な説明は省略する。 Incidentally, the image pickup tube device of this invention is the third type except for the above.
Since the configuration is similar to that shown in the figure, detailed explanation will be omitted.
この考案によれば、電子ビームの密度が最大と
なるクロスオーバを第２格子電極４の第２の制限
孔１２よりも下流のシールド円筒１４内に形成さ
せることにより、小さい陰極負荷にて速度分布の
小さい充分な量の電子ビームを得ることができ
る。又、第２の制限孔１２の下流にシールド円筒
１４を設けているので、電磁集束−静電偏向方式
（MS方式）の撮像管においては、静電偏向電極
入口付近での偏向電界の縁端部の乱れを避け、偏
向電界の均一性の良い位置にて電子ビームを放出
できることから、画像の均一性向上にも非常に有
効である。更に、電磁集束−電磁偏向方式（MM
方式）及び静電集束−電磁偏向方式（SM方式）
の撮像管においては、第２格子電極４とその下流
に隣接する収束電極５との間に漏れる電流を遮蔽
させる、第２格子電極４及び収束電極５のリード
ワイヤによる電界の乱れの影響を避ける等多くの
効果を有している。
According to this invention, by forming a crossover where the density of the electron beam is maximum in the shield cylinder 14 downstream of the second restriction hole 12 of the second grid electrode 4, the velocity distribution can be achieved with a small cathode load. A small enough amount of electron beam can be obtained. In addition, since the shield cylinder 14 is provided downstream of the second restriction hole 12, in an image pickup tube using an electromagnetic focusing/electrostatic deflection method (MS method), the edge of the deflection electric field near the entrance of the electrostatic deflection electrode is Since the electron beam can be emitted at a position where the deflection electric field has good uniformity while avoiding disturbance in the area, it is also very effective in improving the uniformity of images. Furthermore, the electromagnetic focusing-electromagnetic deflection method (MM
method) and electrostatic focusing-electromagnetic deflection method (SM method)
In this image pickup tube, current leakage between the second grid electrode 4 and the downstream adjacent focusing electrode 5 is shielded, and the influence of electric field disturbance due to the lead wires of the second grid electrode 4 and the focusing electrode 5 is avoided. It has many effects such as
尚、上記実施例では、電磁集束−電磁偏向形撮
像管を例にあげたが、この考案は陰極付近に存在
する格子電極の構成に関するものであるため、ど
のような方式の撮像管にも適用することができ
る。 In the above embodiment, an electromagnetic focusing/electromagnetic deflection type image pickup tube was used as an example, but since this idea is related to the configuration of the grid electrode that exists near the cathode, it can be applied to any type of image pickup tube. can do.
第１図はこの考案の一実施例にかかる撮像管装
置の要部を示す断面図、第２図は第１図の要部に
おける寸法関係を示す断面図、第３図は一般的な
撮像管を示す概略構成図、第４図は従来の撮像管
装置の要部を示す断面図である。
１……陰極、３……第１格子電極、４……第２
格子電極、１１……第１の制限孔、１２……第２
の制限孔、１４……シールド円筒。
Fig. 1 is a sectional view showing the main parts of an image pickup tube device according to an embodiment of the invention, Fig. 2 is a sectional view showing the dimensional relationship in the main parts of Fig. FIG. 4 is a sectional view showing the main parts of a conventional image pickup tube device. 1... cathode, 3... first grid electrode, 4... second
Grid electrode, 11...first restriction hole, 12...second
Restriction hole, 14...shield cylinder.
Claims (1)
定間隔をおいて配設され第１の制限孔を有する第
１格子電極と、この第１格子電極と同軸上で所定
間隔をおいて配設され第２の制限孔を有する第２
格子電極とを少なくとも備えた撮像管と、上記各
電極にそれぞれ所定電圧を印加するように接続さ
れた電源とを具備してなる撮像管装置において、 上記第２格子電極にシールド円筒を下流方向に
取付け、このシールド円筒の内部で電子ビーム密
度が最大となるように構成し、且つ上記シールド
円筒の先端から上記第２の制限孔の中心までの距
離をl1、この第２の制限孔の中心から上記陰極ま
での距離をl2としたとき、l1／l2＝3.9〜5.6の範囲
に設定され、更に上記第１格子電極に印加される
電圧が上記陰極に対して０〜＋15V、上記第２格
子電極に印加される電圧が上記陰極に対して＋50
〜＋300Vに設定されていることを特徴とする撮
像管装置。[Claims for Utility Model Registration] A cathode that emits electrons, a first grid electrode disposed coaxially with the cathode at a predetermined interval and having a first restriction hole, and coaxially with the first grid electrode. a second restricting hole disposed at a predetermined interval in the second restricting hole;
In an image pickup tube device comprising an image pickup tube having at least a grid electrode, and a power source connected to apply a predetermined voltage to each of the electrodes, a shield cylinder is connected to the second grid electrode in a downstream direction. The shield cylinder is installed so that the electron beam density is maximized inside the shield cylinder, and the distance from the tip of the shield cylinder to the center of the second restriction hole is l 1 , and the center of the second restriction hole is When the distance from to the cathode is l 2 , l 1 /l 2 is set in the range of 3.9 to 5.6, and the voltage applied to the first grid electrode is 0 to +15 V with respect to the cathode, and The voltage applied to the second grid electrode is +50 with respect to the above cathode.
An image pickup tube device characterized by being set to ~+300V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984146218U JPH0355234Y2 (en) | 1984-09-27 | 1984-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984146218U JPH0355234Y2 (en) | 1984-09-27 | 1984-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6161750U JPS6161750U (en) | 1986-04-25 |
| JPH0355234Y2 true JPH0355234Y2 (en) | 1991-12-09 |
Family
ID=30704458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984146218U Expired JPH0355234Y2 (en) | 1984-09-27 | 1984-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0355234Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577052A (en) * | 1980-05-14 | 1982-01-14 | Thomson Csf | Electron gun for focusing beam and device with same gun and particularly vidicon tube |
| JPS58188037A (en) * | 1982-04-28 | 1983-11-02 | Sony Corp | Electron gun |
-
1984
- 1984-09-27 JP JP1984146218U patent/JPH0355234Y2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577052A (en) * | 1980-05-14 | 1982-01-14 | Thomson Csf | Electron gun for focusing beam and device with same gun and particularly vidicon tube |
| JPS58188037A (en) * | 1982-04-28 | 1983-11-02 | Sony Corp | Electron gun |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161750U (en) | 1986-04-25 |
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