JPH01177713A - Delay circuit for semiconductor integrated circuit - Google Patents
Delay circuit for semiconductor integrated circuitInfo
- Publication number
- JPH01177713A JPH01177713A JP63002194A JP219488A JPH01177713A JP H01177713 A JPH01177713 A JP H01177713A JP 63002194 A JP63002194 A JP 63002194A JP 219488 A JP219488 A JP 219488A JP H01177713 A JPH01177713 A JP H01177713A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- capacitor
- output
- signal
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000003990 capacitor Substances 0.000 claims abstract description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 238000010586 diagram Methods 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Pulse Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は半導体集積回路に関し、特に半導体集積回路用
遅延回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to a delay circuit for a semiconductor integrated circuit.
[従来の技術]
従来、この種の遅延回路は、基本回路であるインバータ
回路やノン・インバータ回路等を必要な数だけ直列に接
続して構成していた。[Prior Art] Conventionally, this type of delay circuit has been constructed by connecting a necessary number of basic circuits such as inverter circuits and non-inverter circuits in series.
[発明が解決しようとする問題点]
上述した従来の遅延回路は、基本回路を多数使用するこ
とによって所望の遅延時間を得ているので、セルを多数
必要とするという欠点がある。[Problems to be Solved by the Invention] The conventional delay circuit described above obtains a desired delay time by using a large number of basic circuits, and therefore has the disadvantage of requiring a large number of cells.
[問題点を解決するための手段]
本発明は上記従来の問題点を解決しセルを多数必要とす
ることなく遅延時間を得ることのできる半導体集積回路
用遅延回路を提供することを目的としてなされたもので
あり、かかる目的を達成するため、セルと信号配線と電
源配線より成るマスタースライス方式の半導体集積回路
用遅延回路において、上記信号配線と上記電源配線の交
差部分によりコンデンサを形成した構成としている。[Means for Solving the Problems] The present invention has been made for the purpose of solving the above-mentioned conventional problems and providing a delay circuit for a semiconductor integrated circuit that can obtain a delay time without requiring a large number of cells. In order to achieve this purpose, a master slice type delay circuit for semiconductor integrated circuits consisting of a cell, a signal wiring, and a power supply wiring has a structure in which a capacitor is formed by the intersection of the signal wiring and the power supply wiring. There is.
[実施例]
次に、本発明の一実施例について図面を参照して説明す
る。[Example] Next, an example of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例の回路図、第2図は本実施例
のコンデンサを示す平面図、第3図は第2図の横断面図
であり、第4図は第2図の斜視図、第5図は本実施例の
動作を説明するための波形図である。Fig. 1 is a circuit diagram of an embodiment of the present invention, Fig. 2 is a plan view showing a capacitor of this embodiment, Fig. 3 is a cross-sectional view of Fig. 2, and Fig. 4 is a cross-sectional view of Fig. 2. The perspective view and FIG. 5 are waveform charts for explaining the operation of this embodiment.
図において、1.2はインバータ回路、3はコンデンサ
、4は第1アルミ配線、5は第2アルミ配線、6は絶縁
膜である。In the figure, 1.2 is an inverter circuit, 3 is a capacitor, 4 is a first aluminum wiring, 5 is a second aluminum wiring, and 6 is an insulating film.
本実施例の遅延回路は、第1図に示すようにインバータ
回路1の出力12をインバータ回路2の入力に接続し、
その出力12と電源電位Vssの間にコンデンサ3を接
続して構成される。上記インバータ回路1の人力11に
第5図に示すような入力波形51の信号を入力すると、
その出力12はコンデンサ3が無い場合にはインバータ
回路1自身の遅延時間上〇だけ遅れた出力波形53が出
力されてインバータ回路2に入力されるが、コンデンサ
3が有る場合には、コンデンサ3の充放電による遅延時
間1.が加ねフた出力波形52が出力されてインバータ
回路2に入力される。即ち、コンデンサ3によって出力
を遅延させることができるものである。The delay circuit of this embodiment connects the output 12 of the inverter circuit 1 to the input of the inverter circuit 2 as shown in FIG.
A capacitor 3 is connected between the output 12 and the power supply potential Vss. When a signal with an input waveform 51 as shown in FIG. 5 is input to the human power 11 of the inverter circuit 1,
When the capacitor 3 is not present, the output waveform 53 is delayed by the delay time of the inverter circuit 1 itself and is input to the inverter circuit 2, but when the capacitor 3 is present, the output waveform 53 is delayed by Delay time due to charging and discharging 1. An output waveform 52 is outputted and inputted to the inverter circuit 2. That is, the output can be delayed by the capacitor 3.
次に、上記コンデンサ3の構成について第2図、第3図
、第4図を用いて説明する。一般に、マスタースライス
方式の半導体集積回路は、X方向のセル列を一定間隔で
X方向に配置し、又X方向の電源配線対をX方向に複数
組配置した上で、信号配線をX方向又はX方向で使用し
てセル間を接続している。そして、X方向に信号配線と
して第1アルミ配線を、X方向に電源配線として第2ア
ルミ配線を割り当てている。Next, the structure of the capacitor 3 will be explained using FIGS. 2, 3, and 4. In general, in a master slice type semiconductor integrated circuit, cell rows in the X direction are arranged at regular intervals in the X direction, and multiple pairs of power supply wiring in the X direction are arranged in the X direction. It is used in the X direction to connect cells. A first aluminum wire is assigned as a signal wire in the X direction, and a second aluminum wire is assigned as a power supply wire in the X direction.
本実施例では、上記第1アルミ配線と第2アルミ配線と
でコンデンサ3を構成している。即ち、コンデンサ3の
一方の電極を信号配線である第1アルミ配線4により形
成し、もう一方の電極を電源電位VSSである第2アル
ミ配線5により形成すると共に、両者の交差部分に絶縁
膜6を介在してコンデンサ3としている。In this embodiment, the capacitor 3 is composed of the first aluminum wiring and the second aluminum wiring. That is, one electrode of the capacitor 3 is formed by the first aluminum wiring 4 which is the signal wiring, and the other electrode is formed by the second aluminum wiring 5 which is the power supply potential VSS, and an insulating film 6 is formed at the intersection of the two. is used as a capacitor 3.
また、幅の広い第2アルミ配線5に交差する第1アルミ
配線4の交差部分の幅を広くしである。これにより、交
差面が大きくなり、コンデンサとして機能するものであ
る。Further, the width of the intersection portion of the first aluminum wiring 4 that intersects with the second aluminum wiring 5, which is wide, is made wider. This increases the cross-section area and functions as a capacitor.
従って、第1アルミ配線4と第2アルミ配線5の交差面
を広げることにより、コンデンサの容量を増加させるこ
とができる。Therefore, by widening the intersection between the first aluminum wiring 4 and the second aluminum wiring 5, the capacitance of the capacitor can be increased.
[発明の効果]
以上説明したように本発明は、セルと信号配線と電源配
線より成るマスタースライス方式の半導体集積回路用遅
延回路において、上記信号配線と上記電源配線の交差部
分によりコンデンサを形成したことにより、セルを多数
使用することなく大きな遅延量を得ることのできる遅延
回路を提供できる効果がある。[Effects of the Invention] As explained above, the present invention provides a delay circuit for a master slice type semiconductor integrated circuit consisting of a cell, a signal wiring, and a power wiring, in which a capacitor is formed by the intersection of the signal wiring and the power wiring. This has the effect of providing a delay circuit that can obtain a large amount of delay without using a large number of cells.
第1図は本発明の一実施例を示す回路図、第2図と第3
図と第4図はそれぞれ第1図のコンデンサの平面図、断
面図及び斜視図、第5図は第1図に示す回路の動作を示
す波形図である。
1.2:インバータ回路
3:コンデンサ
4:第1アルミ配線
5:第2アルミ配線
6:絶縁膜Figure 1 is a circuit diagram showing one embodiment of the present invention, Figures 2 and 3 are circuit diagrams showing one embodiment of the present invention.
4 are a plan view, a sectional view, and a perspective view of the capacitor shown in FIG. 1, respectively, and FIG. 5 is a waveform diagram showing the operation of the circuit shown in FIG. 1. 1.2: Inverter circuit 3: Capacitor 4: First aluminum wiring 5: Second aluminum wiring 6: Insulating film
Claims (1)
方式の半導体集積回路用遅延回路において、上記信号配
線と上記電源配線の交差部分によりコンデンサを形成し
たことを特徴とする半導体集積回路用遅延回路。A delay circuit for a semiconductor integrated circuit of a master slice type comprising a cell, a signal wiring, and a power supply wiring, characterized in that a capacitor is formed by an intersection of the signal wiring and the power supply wiring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63002194A JPH01177713A (en) | 1988-01-08 | 1988-01-08 | Delay circuit for semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63002194A JPH01177713A (en) | 1988-01-08 | 1988-01-08 | Delay circuit for semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01177713A true JPH01177713A (en) | 1989-07-14 |
Family
ID=11522549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63002194A Pending JPH01177713A (en) | 1988-01-08 | 1988-01-08 | Delay circuit for semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01177713A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0475377A (en) * | 1990-07-18 | 1992-03-10 | Nec Ic Microcomput Syst Ltd | Semiconduct0r integrated circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57133712A (en) * | 1981-02-12 | 1982-08-18 | Fujitsu Ltd | Constituting method of delay circuit in master slice ic |
JPS62247619A (en) * | 1986-04-21 | 1987-10-28 | Hitachi Ltd | Inverter delay circuit |
-
1988
- 1988-01-08 JP JP63002194A patent/JPH01177713A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57133712A (en) * | 1981-02-12 | 1982-08-18 | Fujitsu Ltd | Constituting method of delay circuit in master slice ic |
JPS62247619A (en) * | 1986-04-21 | 1987-10-28 | Hitachi Ltd | Inverter delay circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0475377A (en) * | 1990-07-18 | 1992-03-10 | Nec Ic Microcomput Syst Ltd | Semiconduct0r integrated circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4989062A (en) | Semiconductor integrated circuit device having multilayer power supply lines | |
US4602270A (en) | Gate array with reduced isolation | |
JP2668981B2 (en) | Semiconductor integrated circuit | |
KR890003147B1 (en) | Gate array | |
JPS6065547A (en) | Semiconductor device | |
JPH0695553B2 (en) | Gate array | |
JPS5524479A (en) | Semiconductor | |
JP3556416B2 (en) | Semiconductor integrated circuit device | |
JPH01177713A (en) | Delay circuit for semiconductor integrated circuit | |
US5401988A (en) | Standard cell layout arrangement for an LSI circuit | |
JPS612342A (en) | Semiconductor integrated circuit device | |
JPH04142074A (en) | Semiconductor device | |
JPH0550143B2 (en) | ||
JPH03195045A (en) | Semiconductor integrated circuit device | |
JPH0642513B2 (en) | Integrated circuit device | |
JPS61123164A (en) | Package for semiconductor integrated circuit | |
JPS58119647A (en) | Lsi master slice chip | |
JPS55148449A (en) | Semiconductor device | |
JPS6124247A (en) | Semiconductor device | |
JPS6110253A (en) | Semiconductor ic | |
JPS621244A (en) | Master slice type semiconductor device | |
JPS6066446A (en) | Gate-array integrated circuit | |
JPS62138447U (en) | ||
JPH037964Y2 (en) | ||
JPH03155669A (en) | Gate array device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Effective date: 20040723 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
A977 | Report on retrieval |
Effective date: 20060209 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060221 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060222 |
|
A02 | Decision of refusal |
Effective date: 20060704 Free format text: JAPANESE INTERMEDIATE CODE: A02 |