JPH01176290A - Graphite jig for liquid epitaxial growth - Google Patents
Graphite jig for liquid epitaxial growthInfo
- Publication number
- JPH01176290A JPH01176290A JP33323087A JP33323087A JPH01176290A JP H01176290 A JPH01176290 A JP H01176290A JP 33323087 A JP33323087 A JP 33323087A JP 33323087 A JP33323087 A JP 33323087A JP H01176290 A JPH01176290 A JP H01176290A
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- pyrolytic carbon
- epitaxial growth
- jig
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 20
- 239000010439 graphite Substances 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000007791 liquid phase Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims 1
- 239000002296 pyrolytic carbon Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000001629 suppression Effects 0.000 abstract 1
- 239000007770 graphite material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000516 activation analysis Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体材料、特に■−ｖ族化合物半導体等の液
相エピタキシャル成長に用いられる黒鉛治具の改良に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the improvement of a graphite jig used for liquid phase epitaxial growth of semiconductor materials, particularly 1-V group compound semiconductors.
（従来の技術）
一般にＧａＰやＧａＡｓ等の発光素子を製造する場合、
スライド式の治具を用い、これら■−ｖ族化合物単結晶
上に液相エピタキシャル法によって組成の異なる結晶層
を成長させ、ｐ−ｎ接合を形成させている。(Prior art) Generally, when manufacturing a light emitting element such as GaP or GaAs,
Using a sliding jig, crystal layers having different compositions are grown on these single crystals of group II-V compounds by liquid phase epitaxial method to form p-n junctions.
このスライド弐治具として、半導体材料と化学反応を起
しにくく高純度で耐熱性の大きい、黒鉛製のものが用い
られているが、黒鉛材料は本来多孔質であるため、その
開気孔中に空気、水分等が吸着し、これがエピタキシャ
ル成長時に放出され成長層内にドープされることにより
、製品の特性に大きなバラツキを生じさせていた。また
黒鉛材は黒鉛微粉が離脱しやすいという性質があるため
この微粉がエピタキシャル成長層中へ混入し、その特性
に悪影響を及ぼすという欠点も有していた。The second slide jig is made of graphite, which has high purity and high heat resistance and does not easily cause chemical reactions with semiconductor materials. However, since graphite material is inherently porous, there are Air, moisture, etc. are adsorbed and released during epitaxial growth and doped into the grown layer, causing large variations in product properties. Furthermore, since graphite materials have the property that fine graphite powder is easily separated, this fine powder can be mixed into the epitaxially grown layer and have an adverse effect on its properties.
（発明が解決しようとする問題点）
本発明は吸着ガスが少なく、かつ、黒鉛微粉が離脱する
ことのない、液相エピタキシャル成長用黒鉛治具を提供
することを目的とする。(Problems to be Solved by the Invention) An object of the present invention is to provide a graphite jig for liquid phase epitaxial growth, which has a small amount of adsorbed gas and does not allow fine graphite powder to separate.
（問題点を解決するための手段）
本発明者は、治具として有用な材料である、黒鉛材の特
性を生かし、かつ黒鉛材料のもつ問題点を解決するため
に種々の検討を重ねた結果、ある限定された範囲内の熱
膨張係数をもつ黒鉛材の表面に熱分解炭素による被膜を
施せば前記問題点が解決できうることを見い出した。(Means for Solving the Problems) The present inventor has made various studies to take advantage of the characteristics of graphite material, which is a useful material for jigs, and to solve the problems of graphite materials. It has been discovered that the above problems can be solved by applying a coating of pyrolytic carbon to the surface of a graphite material having a coefficient of thermal expansion within a certain limited range.
すなわち本発明による液相エピタキシャル成長用黒鉛治
具は、２０〜４００”０の平均膨張係数が１．３〜３．
５Ｘ１０−６／℃の等方性黒鉛基材表面の一部又は全面
に厚さ５μｍ以上の熱分解炭素膜を被覆形成してなるこ
とを特徴とするものである。That is, the graphite jig for liquid phase epitaxial growth according to the present invention has an average expansion coefficient of 1.3 to 3.
It is characterized by forming a pyrolytic carbon film having a thickness of 5 μm or more on a part or the entire surface of an isotropic graphite base material of 5×10 −6 /° C.
熱分解炭素膜は気孔を有しない非常に緻密な構造を持ち
、気体透過性がほとんど無いため基材黒鉛からの放出ガ
スの拡散をおさえることができる。また、黒鉛微粉の離
脱も無く、高純度であるためエピタキシャル成長層への
影響が小さく、冶具材料として非常に有用である。また
加工性、寸法安定性に優れた黒鉛系村上へ被覆されるた
め、寸法精度が要求される液相エピタキシャル成長用治
具においてその適応性は十分である。The pyrolytic carbon membrane has a very dense structure with no pores and has almost no gas permeability, so it can suppress the diffusion of gas released from the graphite base material. In addition, there is no detachment of fine graphite powder, and because of its high purity, it has little effect on the epitaxial growth layer, making it very useful as a jig material. In addition, since it is coated on graphite-based Murakami which has excellent workability and dimensional stability, its applicability is sufficient in liquid phase epitaxial growth jigs that require dimensional accuracy.
本発明における黒鉛基材の平均膨張係数を前記範囲に限
定した理由は、その値が１．３Ｘ１０−６／”Ｃ未満場
合でも、３．５Ｘ１０−６／”０より大きくなった場合
でも、相方とも熱分解炭素被膜との熱膨張の差が大きく
なり、膜の剥離やクラックの発生が起こるためである。The reason why the average expansion coefficient of the graphite base material in the present invention is limited to the above range is that even if the value is less than 1.3X10-6/"C or greater than 3.5X10-6/"0, the This is because the difference in thermal expansion with the pyrolytic carbon film increases, causing peeling and cracking of the film.
また、エピタキシャル治具として使用する場合、ピンホ
ール等があるものは好ましくなく、従って熱分解炭素被
膜の厚みは少なくとも５μｍ以上のものが必要となる。Furthermore, when used as an epitaxial jig, it is not preferable to have pinholes or the like, and therefore the thickness of the pyrolytic carbon film must be at least 5 μm or more.
黒鉛基材は、熱膨張係数の異方比が小さく、また寸法安
定性に優れた等方性黒鉛材料が必要である。熱膨張の異
方比が大きいと被膜中、部分的に応力のかかる個゛所が
多くなりクラック、剥離の発生する可能型が高い、この
ため望ましくは使用する黒鉛材の異方比を１．２５以下
にすることが適当である。The graphite base material needs to be an isotropic graphite material with a small anisotropic ratio of thermal expansion coefficient and excellent dimensional stability. If the anisotropic ratio of thermal expansion is large, there will be many places in the coating where stress is applied locally, increasing the possibility of cracking or peeling.For this reason, it is desirable to set the anisotropic ratio of the graphite material used to 1. It is appropriate to set it to 25 or less.
（実施例及び比較例） 以下、実施例および、比較例を説明する。(Example and comparative example) Examples and comparative examples will be described below.
種々の熱膨張係数をもつ等方性黒鉛基材上に熱分解炭素
膜の厚みを変化させて被覆し、液相エピタキシャル成長
用治具を作製した。A jig for liquid phase epitaxial growth was fabricated by coating isotropic graphite substrates with various thermal expansion coefficients with pyrolytic carbon films of varying thickness.
次にこれらの治具を用いてＧａＡｓのエピタキシャル成
長を行ない、得られたエピタキシャル膜について、放射
化分析法にて全酸素及び全炭素含有量を測定した。その
結果を表−１に示す。Next, epitaxial growth of GaAs was performed using these jigs, and the total oxygen and total carbon contents of the obtained epitaxial film were measured by activation analysis. The results are shown in Table-1.
（以下余白）
表−１
（発明の効果）
本発明により得られる液相エピタキシャル成長用黒鉛治
具は空気、水蒸気等のガスが放出されることがなく、ま
た黒鉛微粉の離脱を防止できるため、エピタキシャル成
長層の特性の低下を抑制する効果が得られる。(The following is a blank space) Table 1 (Effects of the invention) The graphite jig for liquid phase epitaxial growth obtained by the present invention does not release gases such as air and water vapor, and can prevent graphite fine powder from detaching. The effect of suppressing the deterioration of the properties of the layer can be obtained.
Claims (1)
は全面に厚さ５μｍ以上の熱分解炭素膜を被覆形成して
なることを特徴とする液相エピタキシャル成長用黒鉛治
具。[Claims] Pyrolysis with a thickness of 5 μm or more on a part or the entire surface of an isotropic graphite base material having an average expansion coefficient of 1.3 to 3.5×10^-^6/°C at 20 to 400°C. A graphite jig for liquid phase epitaxial growth characterized by being coated with a carbon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33323087A JPH01176290A (en) | 1987-12-28 | 1987-12-28 | Graphite jig for liquid epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33323087A JPH01176290A (en) | 1987-12-28 | 1987-12-28 | Graphite jig for liquid epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01176290A true JPH01176290A (en) | 1989-07-12 |
Family
ID=18263776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33323087A Pending JPH01176290A (en) | 1987-12-28 | 1987-12-28 | Graphite jig for liquid epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01176290A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277934A (en) * | 1990-06-27 | 1994-01-11 | Advanced Ceramico Corporation | Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon |
| EP1804284A1 (en) * | 2004-10-19 | 2007-07-04 | Canon Anelva Corporation | Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment |
| JP2010184849A (en) * | 2009-02-13 | 2010-08-26 | Toyota Motor Corp | METHOD FOR COMPOSITE BONDING OF SEED CRYSTAL FOR GROWING SiC SINGLE CRYSTAL BY SOLUTION GROWTH TECHNIQUE |
| CN113936995A (en) * | 2021-12-17 | 2022-01-14 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158165A (en) * | 1978-06-02 | 1979-12-13 | Toshiba Ceramics Co | Liquid phase epitaxial jig for third to fifth group compound semiconductor |
| JPS62252394A (en) * | 1986-04-23 | 1987-11-04 | Denki Kagaku Kogyo Kk | Graphite part for semiconductor melting apparatus |
-
1987
- 1987-12-28 JP JP33323087A patent/JPH01176290A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158165A (en) * | 1978-06-02 | 1979-12-13 | Toshiba Ceramics Co | Liquid phase epitaxial jig for third to fifth group compound semiconductor |
| JPS62252394A (en) * | 1986-04-23 | 1987-11-04 | Denki Kagaku Kogyo Kk | Graphite part for semiconductor melting apparatus |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277934A (en) * | 1990-06-27 | 1994-01-11 | Advanced Ceramico Corporation | Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon |
| EP1804284A1 (en) * | 2004-10-19 | 2007-07-04 | Canon Anelva Corporation | Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment |
| EP1804284A4 (en) * | 2004-10-19 | 2008-03-05 | Canon Anelva Corp | Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment |
| JP2010184849A (en) * | 2009-02-13 | 2010-08-26 | Toyota Motor Corp | METHOD FOR COMPOSITE BONDING OF SEED CRYSTAL FOR GROWING SiC SINGLE CRYSTAL BY SOLUTION GROWTH TECHNIQUE |
| CN113936995A (en) * | 2021-12-17 | 2022-01-14 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
| CN113936995B (en) * | 2021-12-17 | 2022-03-04 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
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