JPH01169920A - Continuous film forming device - Google Patents

Abstract

PURPOSE:To prevent the dispersion of a film thickness and film quality by a method wherein a substrate in a reaction film forming chamber is rotated at the time of film formation and the flow velocity and the concentration distribution of reaction gas at each site on the substrate are made even. CONSTITUTION:The moment when a substrate stand 4 started to rotate by a rotary type heater, a reaction gas (a) is introduced and a film formation is generated. After the film formation, belts 6 are moved, a reaction film forming chamber 5 is carried out from a high-temperature chamber 7 and after the chamber 5 is cooled in the air, a substrate 3 is taken out and is carried in a cleaning chamber 12. The moment a cleaning substance introducing tube 13 and a cleaning substance discharge pipe 14, which are provided in the chamber 12, are combined with their respective introducing and discharge ports 1 and 2 in the chamber 5, the belts 6 are standstilled, a cleaning substance (c) is introduced and a cleaning is started. After the cleaning, the belts 6 are moved, the chamber 5 is carried out from the chamber 12 and a substrate 3 is installed anew and is carried in the chamber 7. Thereby, the variability of a film thickness and film quality is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a continuous film forming apparatus that forms a thin film using a CVD reaction.

BACKGROUND OF THE INVENTION In recent years, chemical vapor deposition (CVD) is the core of thin film forming methods and has come into widespread use.

Since the CVD method is a chemical reaction, it is possible to form thin films of a very wide variety of substances, and by combining various gas-reactive materials, it is possible to freely control the composition. It is now possible to synthesize thin films with extremely new structures and compositions, and it is also possible to form them at temperatures well below the melting points of those materials.

Recently, a continuous film forming apparatus has been developed that is capable of mass-producing thin film formation using the CVD method.

An example of the conventional continuous film forming apparatus mentioned above will be described below with reference to the drawings.

FIG. 3 is an explanatory diagram of a conventional continuous film forming apparatus.

A reaction film forming chamber 5 in which a substrate 3 is installed is carried into a high temperature chamber 7 by a belt 6. After film formation by introducing reactive gases, the reaction film forming chamber 5 is taken out from the high temperature chamber 7, and after the substrate 3 is taken out, it is cleaned in the cleaning chamber 12. After being carried out from the cleaning chamber 12, a new substrate 3 is installed in the reaction film forming chamber 5, and the substrate 3 is carried into the high temperature chamber 7.

The above steps are performed continuously using a plurality of reaction film forming chambers 24.

Problems to be Solved by the Invention However, the above configuration has a problem in that the flow rate and concentration distribution of the reaction gas within the reaction film forming chamber are non-uniform, resulting in variations in film thickness and film quality.

In view of the above problems, the present invention provides a continuous film forming apparatus that can realize uniform film thickness and uniform film quality.

Means for Solving the Problems In order to solve the above problems, the continuous film forming apparatus of the present invention has a structure in which the substrate in the reaction film forming chamber rotates during film forming.

Effects In the present invention, the flow rate and concentration distribution of the reactant gas at the core site on the substrate are made uniform by the above-described configuration, so that variations in film thickness and film quality do not occur.

EXAMPLE Hereinafter, a continuous film forming apparatus according to an example of the present invention will be described with reference to the drawings.

FIG. 1 shows a continuous film forming apparatus according to a first embodiment of the present invention. In FIG. 1, a reaction film forming chamber 5 having an inlet 1 and an outlet 2 and in which a substrate table 4 on which a substrate 3 is placed is installed is carried into a high temperature chamber 7 by a belt 6. Incidentally, the reaction film forming chamber 5 is provided with an opening/closing window 8 having an airtight structure for taking the substrate 3 in and out. Further, the high temperature chamber 7 has a space for maintaining a gas atmosphere at a predetermined temperature.

The moment when the reaction gas inlet pipe 9 and the exhaust gas pipe lO provided in the high temperature chamber 7 are combined with the inlet 1 and the exhaust port 2 of the reaction deposition chamber 5, respectively, and the substrate table 4 and the rotary heater 11 are combined. , the belt 6 comes to rest. The substrate 3 receives heat capacity necessary for film formation by a rotary heater 11.

The moment the substrate table 4 starts rotating by the rotary heater 11, the reaction gas a is introduced and film formation occurs.

During film formation in the high temperature chamber 7, the structure is such that the reaction gas a and the exhaust gas b do not leak out of the reaction film formation chamber 5.

After film formation, the belt 6 moves, and the reaction film formation chamber 5 is carried out from the high temperature chamber 7, and after being cooled in the atmosphere, the substrate 3 is taken out and transferred to the cleaning chamber 12.
will be transported to.

At the moment when the cleaning substance inlet pipe 13 and the cleaning substance discharge pipe 14 provided in the cleaning chamber 12 are combined with the inlet 1 and the outlet 2 of the reaction film forming chamber 5, respectively, the belt 6 comes to rest and the cleaning substance C is introduced. cleaning will begin.

During cleaning in the cleaning chamber 12, the structure is such that the cleaning substance C and waste d do not leak out of the reaction film forming chamber 5.

After cleaning, the belt 6 moves and the reaction film forming chamber 5 is carried out from the cleaning chamber 12, a new substrate 3 is installed, and the reaction film forming chamber 5 is carried into the high temperature chamber 7.

The above steps are performed continuously using a plurality of reaction film forming chambers 5.

As a specific example of this apparatus configured in this manner, the formation of an amorphous silicon film will be described.

A stainless steel reaction film forming chamber 5 having one inlet 1 and one outlet 2 in the horizontal direction was carried into a high temperature chamber 7 by a belt 6. A substrate table 4 on which a 5×5 cffi Pyrex substrate 3 is mounted is installed in the reaction film forming chamber 5, and the temperature inside the high temperature chamber 7 is maintained at 760 Torr in a nitrogen (N2) atmosphere, and the substrate temperature is controlled by a rotary heater 11. The temperature was maintained at 460°C, and a temperature gradient of 10'C/unit was created in the vertical direction.

Using 30% disilane (S, it H6) 150 SCCM diluted with hydrogen (H2) as a reaction gas, the substrate 3 was rotated at 3 Or, p, m, and film formation was performed for 5 minutes. After film formation, it was cooled to 100° C. in a flame, the substrate 3 was taken out, and the reaction film formation chamber 5 was transferred to the cleaning chamber 12.

After etching for 5 minutes using chlorine (CCl12) gas as a cleaning substance, the reaction film forming chamber 5 was detected in the cleaning chamber 12, a new Pyrex substrate 3 was installed, and it was carried into the high temperature chamber 7.

As a result of continuous film formation in this manner, all the films obtained on the substrate 3 were amorphous silicon, and the film thicknesses measured at each of 15 sites on arbitrary 10 substrates were 4520 ± 30. Furthermore, as a result of spectroscopic and conductivity measurements of these parts, the optical energy gap was 1.6 to 1.7 eν, and the ratio of bright conductivity to dark conductivity, that is, the photosensitivity, was 3 to 5 x 104. Ta. By observing the surface condition of each of these parts using a surface inspection lamp, it was confirmed that the film was shiny and did not contain particles.

As described above, according to this embodiment, by rotating the substrate 3 during film formation in the reaction film formation chamber 5, the flow velocity and concentration distribution of the reaction gas at each location on the substrate become uniform.
Variations in film thickness and film quality can be prevented.

Effects of the Invention As described above, in the present invention, the rotation of the substrate in the reaction film formation chamber during film formation makes the flow rate and concentration distribution of the reaction gas uniform at each location on the substrate, resulting in improved film thickness and film quality. This method is extremely useful as a mass production device for large, homogeneous thin films.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a continuous film forming apparatus according to an embodiment of the present invention;
FIG. 2 is a sectional view of a high temperature chamber during film formation in a continuous film forming apparatus according to an embodiment of the present invention, and FIG. 3 is a perspective view of a conventional continuous film forming apparatus. 1...Inlet, 2...Outlet, 3...
... Board, 4... Board stand, 5...
Reaction film forming chamber, 6...Belt, 7...High temperature chamber, 8...Opening/closing window, 9...Reaction gas introduction pipe, 10... ...Exhaust gas pipe, 11...
・Rotary heater, 12...Cleaning room, 13...
...Cleaning substance inlet pipe, 14...Cleaning substance discharge pipe, 21...Heater.

Claims (3)

[Claims] (1) It is divided into a high-temperature chamber with a space for maintaining the gas atmosphere at a predetermined temperature and a cleaning chamber for cleaning the reaction film-forming chamber. A continuous film forming apparatus characterized in that the substrate inside the reaction film forming chamber rotates during film formation. (2) The continuous film forming apparatus according to claim (1), wherein the substrate can be rotated by rotating a substrate stand provided in the reaction film forming chamber. (3) The continuous film forming apparatus according to claim (1), wherein the substrate is rotated in one direction or alternately.