JPH01165763A - Crucible for electron-beam vaporization source - Google Patents
Crucible for electron-beam vaporization sourceInfo
- Publication number
- JPH01165763A JPH01165763A JP32369687A JP32369687A JPH01165763A JP H01165763 A JPH01165763 A JP H01165763A JP 32369687 A JP32369687 A JP 32369687A JP 32369687 A JP32369687 A JP 32369687A JP H01165763 A JPH01165763 A JP H01165763A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- electron beam
- graphite
- graphite crucible
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title abstract description 24
- 238000009834 vaporization Methods 0.000 title abstract description 3
- 230000008016 vaporization Effects 0.000 title abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 38
- 239000010439 graphite Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 238000002844 melting Methods 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000000576 coating method Methods 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 11
- 239000002994 raw material Substances 0.000 abstract description 9
- 238000001704 evaporation Methods 0.000 description 16
- 230000008020 evaporation Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は真空蒸着及びイオンブレーティング用の電子ビ
ーム蒸発源用ルツボに関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a crucible for an electron beam evaporation source for vacuum evaporation and ion blating.
〈従来の技術〉
従来より真空蒸着用のルツボとして石英、アルミナ、窒
化ボロン、グラファイト、水冷銅ハース等が用いられて
いる。<Prior Art> Conventionally, quartz, alumina, boron nitride, graphite, water-cooled copper hearth, etc. have been used as crucibles for vacuum evaporation.
ところで電子ビームを用いて高速の成膜速度を伴う真空
蒸着や、イオンブレーティングを行ったりするためのル
ツボは、電極として作用するための導電性を有し、かつ
熱効率を高めて高い蒸発量を得るための断熱性をも兼ね
備えていなければならない。By the way, crucibles used for vacuum evaporation and ion blating, which involve high film formation rates using electron beams, have electrical conductivity to act as electrodes, and also have high thermal efficiency to achieve a high amount of evaporation. It must also have insulation properties to achieve this goal.
グラファイトはこの２点を満足させ得るルツボ材料であ
る。Graphite is a crucible material that can satisfy these two points.
因みに１真空″２１巻第１号（１９７８）第９頁に、電
子ビーム蒸発源の水冷銅ルツボ内に黒鉛のハースライナ
−を設置することにより蒸発速度が５倍程度上昇させ得
た、と記載されている。Incidentally, in 1 Vacuum, Vol. 21, No. 1 (1978), page 9, it is stated that the evaporation rate could be increased by about five times by installing a graphite hearth liner in the water-cooled copper crucible of the electron beam evaporation source. ing.
しかしながらこのグラファイトルツボは焼成されてでき
ているため、気孔が多くルツボ表面のガス放出が著しい
、そのため真空に排気する際時間がかかりすぎ操業性に
悪影響を及ぼしたり、電子ビーム発生装置の異常放電の
原因ともなっている。However, since this graphite crucible is made by firing, it has many pores and gas release from the crucible surface is significant.As a result, it takes too much time to evacuate the crucible, which may adversely affect operability or cause abnormal discharge in the electron beam generator. It is also the cause.
日本真空技術株式会社編の“真空ハンドブック”にも、
真の表面積と幾何学的表面積との比で表される粗さ係数
は銅の５．ステンレスの４〜６に対して黒鉛は６２と表
面が粗く、ガス放出が大であることが示されている。Also in the “Vacuum Handbook” edited by Japan Vacuum Technology Co., Ltd.
The roughness coefficient, expressed as the ratio of true surface area to geometric surface area, is 5. It has been shown that graphite has a rougher surface of 62, compared to 4 to 6 for stainless steel, and releases a large amount of gas.
また特開昭６１−３４１７４号公報に、高融点金属で構
成されたヒーター及び熱遮閉板の表面に窒化物を形成さ
せた真空蒸着用セルが開示されているが、ベースはグラ
ファイトでなく、高融点金属で構成されているため断熱
性に限界があり高速の成膜速度を与えるルツボ材には適
さない。Furthermore, JP-A-61-34174 discloses a vacuum deposition cell in which nitride is formed on the surface of a heater and a heat shield plate made of a high-melting point metal, but the base is not graphite. Since it is composed of a high-melting point metal, it has limited heat insulation properties and is not suitable as a crucible material that provides a high film formation rate.
〈発明が解決しようとする問題点〉
本発明は真空蒸着あるいはイオンブレーティングに際し
て、真空に排気する際、放出ガス量が小さい電子ビーム
蒸発源用ルツボを、また熱効率にすぐれ、高い蒸発速度
を与えることが出来る電子ビーム用蒸発源用ルツボを提
案するものである。<Problems to be Solved by the Invention> The present invention provides a crucible for an electron beam evaporation source that releases a small amount of gas when evacuated to a vacuum during vacuum evaporation or ion blating, and provides a crucible for an electron beam evaporation source that has excellent thermal efficiency and a high evaporation rate. This paper proposes a crucible for an evaporation source for electron beams that can be used as an evaporation source for electron beams.
く問題解決のための手段〉
本発明はグラファイトルツボの周囲外表面を高融点金属
の窒化物にて被覆したことを特徴とする電子ビーム蒸発
源用ルツボである。Means for Solving Problems> The present invention is a crucible for an electron beam evaporation source, characterized in that the outer peripheral surface of the graphite crucible is coated with a nitride of a high melting point metal.
く作 用〉
一般に真空排気中の材料からのガス放出は、大別して予
めその材料中に入っているＨ、Ｏ，Ｎ等のガス成分が表
面に拡散し、真空中に放出される場合、その材料を大気
中に放置した際に大気中のガス分子が表面に吸着したり
内部に拡散浸透したものが真空排気中に離脱あるいは拡
散放出する場合、および材料そのものが蒸発する場合と
がある。In general, gas release from a material during vacuum evacuation can be broadly classified into two types: gas components such as H, O, and N that are already present in the material diffuse to the surface and are released into the vacuum; When a material is left in the atmosphere, gas molecules in the atmosphere may be adsorbed to the surface or diffused into the material and may be released or diffused during evacuation, or the material itself may evaporate.
金属窒化物は他のセラミックスやグラファイトと比較し
て表面上の極性が小さいため、大気中の水蒸気の吸着が
きわめて小さい、しかも被覆された場合母材中に予め不
純物として入っているＨ２Ｏ、Ｎ等のガス成分が表面に
拡散して真空中に放出される隙の拡散障壁として作用す
る。その中でも特に融点が１６００℃以上の高融点金属
の窒化物は１０−’ｔｏｒｒの蒸気圧となる温度が１２
００℃以上と高く、高温においてその蒸発量がきわめて
少ない。Metal nitrides have less polarity on the surface than other ceramics and graphite, so adsorption of water vapor in the atmosphere is extremely small.Moreover, when coated, H2O, N, etc. that are already present in the base material as impurities are absorbed. acts as a diffusion barrier in the gap where the gaseous components diffuse to the surface and are released into the vacuum. Among them, nitrides of high-melting point metals with melting points of 1,600°C or higher have a vapor pressure of 10-'torr at a temperature of 12
The amount of evaporation is extremely small at high temperatures of 00°C or higher.
以上が本発明のグラファイトルツボの放出ガス量がきわ
めて小さい理由と考えられる。The above is considered to be the reason why the amount of gas released from the graphite crucible of the present invention is extremely small.
その上にこれら高融点金属窒化物はグラファイトと比較
して輻射率が小であるため、元来すぐれているグラファ
イトルツボの断熱性をさらに向上させ、その結果として
一層蒸発量を大きくとれる効果がある。Furthermore, these high-melting point metal nitrides have a lower emissivity than graphite, so they can further improve the already excellent thermal insulation properties of graphite crucibles, and as a result, have the effect of increasing the amount of evaporation. .
次に本発明ルツボの具体的通用例を第１図に示す。Next, a specific practical example of the crucible of the present invention is shown in FIG.
ｌはグラファイトルツボであり、２は１の周囲外表面に
施された高融点金属の窒化物被膜、３は蒸発原料、４は
電子ビーム発生装置、５は電子ビーム、６は蒸気である
。電子ビーム発注装置４より発生した電子ビーム５は蒸
発原料３を表面から加熱する。蒸発原料３は断熱性、導
電性を有するグラファイト製ルツボ１によって保持され
ているので外部への熱損失は小さく、熱効率よく蒸気６
を大量に発生させることができる。グラファイトルツボ
１の周囲外表面は高融点金属の窒化物被膜２が施されて
おり、グラファイトルツボｌからの放出ガス量を減少さ
せ、かつ断熱性を高めている。1 is a graphite crucible, 2 is a high melting point metal nitride coating applied to the outer surface of 1, 3 is an evaporation source, 4 is an electron beam generator, 5 is an electron beam, and 6 is steam. The electron beam 5 generated by the electron beam ordering device 4 heats the evaporation raw material 3 from the surface. Since the evaporation raw material 3 is held in the graphite crucible 1 which has heat insulation and conductivity, heat loss to the outside is small and the steam 6 is efficiently heated.
can be generated in large quantities. The peripheral outer surface of the graphite crucible 1 is coated with a nitride coating 2 of a high melting point metal to reduce the amount of gas released from the graphite crucible 1 and to improve heat insulation.
これによって排気時間の短縮及び電子ビーム発生源４の
安定操業、そして高速の成膜速度を達成させる。This makes it possible to shorten the exhaust time, ensure stable operation of the electron beam source 4, and achieve a high film formation rate.
次にグラファイトルツボ外表面への高融点金属の窒化物
の被覆について述べる。Next, we will discuss coating the outer surface of the graphite crucible with high melting point metal nitride.
被覆法としてはグラファイトルツボに存在する気孔の内
部にまで高融点金属の窒化吻を被覆させるためＣＶＤ法
が望ましい、またＰＶＤ法で被覆する場合にも、前述し
た理由のためＡｒ等の不活性ガスの流量を大にして５
Ｘ １０−３ｔｏｒｒ程度の比較的高い蒸着圧力で被覆
を行った方がつき回りがよく気孔の内部まで高融点金属
の窒化物が被覆される。As a coating method, the CVD method is preferable in order to coat the inside of the pores existing in the graphite crucible with the high melting point metal nitride.Also, when coating with the PVD method, an inert gas such as Ar is used for the reasons mentioned above. Increase the flow rate of 5
Coating at a relatively high deposition pressure of about X 10 -3 torr provides better coverage and allows the high melting point metal nitride to coat the inside of the pores.
高融点金属の窒化物の膜厚は０．５−〜１１０Ｉｒが望
ましい、 ０．５１ｒｍ未満の膜厚では成膜した高融
点金属の窒化物中にピンホールが多く含まれ、そこを通
してグラファイトヘガスが脱吸着するからであり、また
１０．以上では熱的内部応力のためには（離が生じやす
いからである。The film thickness of the high melting point metal nitride is preferably 0.5 to 110 Ir. If the film thickness is less than 0.51 rm, the formed high melting point metal nitride will contain many pinholes, through which the graphite gas will pass through. This is because 10. is deadsorbed. In the above case, separation is likely to occur due to thermal internal stress.
次に本発明ルツボの効果を明らかにするために、被覆な
しのグラファイトルツボ、種々の被覆を施したグラファ
イトルツボおよび水冷銅ルツボについて熱効率、蒸着速
度、放出ガス量等を実験によって求めた結果を表１に示
す。Next, in order to clarify the effects of the crucible of the present invention, we will present the results of experiments on thermal efficiency, evaporation rate, amount of gas released, etc. for graphite crucibles without coating, graphite crucibles with various coatings, and water-cooled copper crucibles. Shown in 1.
実験に用いた蒸発原料はＴｉで、ルツボ内径は８５閣φ
、ルツボ体積５２．電子ビーム出力は５０ｋＷ（共通）
である。The evaporation raw material used in the experiment was Ti, and the inner diameter of the crucible was 85 mm.
, crucible volume 52. Electron beam output is 50kW (common)
It is.
なお熱効率は 蒸発！（ｇ／ｓ） Ｘ気化潜熱（Ｊ／ｇ）で評価した。The thermal efficiency is evaporation! (g/s) X Latent heat of vaporization (J/g) was evaluated.
また蒸着速度はルツボ直上の高さ６００ ｔｒｍの位置
で測定した。放出ガス量は排気速度一定の真空ポンプに
より実際に排気される真空チャンバー内のルツボの設置
時及び非設置時の真空度の差より求めた。これより高融
点金属の窒化物被覆をした本発明のグラファイト製ルツ
ボが被覆なしのグラファイトルツボあるいは他の被覆を
施したグラファイトルツボあるいは水冷銅ルツボと比較
して熱効率が高く、そのため高速成膜が得られること、
また放出ガス量がきわめて少なく、より安定した蒸着操
業が可能になることがわかる。The deposition rate was measured at a height of 600 trm directly above the crucible. The amount of released gas was determined from the difference in the degree of vacuum between when the crucible was installed and when it was not installed in a vacuum chamber that was actually evacuated by a vacuum pump with a constant pumping speed. This indicates that the graphite crucible of the present invention coated with a high-melting point metal nitride has higher thermal efficiency than an uncoated graphite crucible, a graphite crucible with other coatings, or a water-cooled copper crucible, and therefore can achieve high-speed film formation. To be able to
It can also be seen that the amount of released gas is extremely small, making it possible to perform more stable deposition operations.
さらに第２図に示すバッチタイプのイオンブレーティン
グ装置にてＣｒＮのイオンブレーティングを行った結果
を第３図および第４図に示す。Furthermore, the results of ion blating of CrN using the batch type ion blating apparatus shown in FIG. 2 are shown in FIGS. 3 and 4.
この方式はプラズマ電子ビームを用いたものであるが、
本発明は特に電子ビーム発生方式を限定しない、真空チ
ャンバー１０の内容積は１．４ホであり図示されていな
い真空ポンプ（排気速度９０００１ハ）で排気される＊
０．１ｔｏｒｒまで荒引後に本川を開始し、同時に
加熱ヒーターを入れる。炉温が３００°Ｃまで上昇して
一定となり真空度が５Ｘ１０−’ｔｏｒｒに達したのち
、ＣｒＮのイオンブレーティングを開始する。ホローカ
ソードガン１１から電子ビーム５が発生し、蒸発原料３
のクロムを蒸発させる。This method uses a plasma electron beam, but
The present invention does not particularly limit the electron beam generation method.The internal volume of the vacuum chamber 10 is 1.4H, and is evacuated by a vacuum pump (pumping speed: 90001H), not shown.
After roughing down to 0.1 torr, start the main river and turn on the heater at the same time. After the furnace temperature rises to 300° C. and becomes constant, and the degree of vacuum reaches 5×10 −’torr, ion blating of CrN is started. An electron beam 5 is generated from the hollow cathode gun 11, and the evaporated raw material 3
Evaporates the chromium.
蒸発原料３は本発明によるＴｉＮ被覆２グラフアイトル
ツボ１によって保持される。ルツボの内径は１００ＩＩ
ＩＩＩｌφでルツボ体積は７１である。蒸発原料３から
のＣｒ蒸気６及び反応ガス導入管８から導入されたＮ２
はホローカソードガンからの電子ビームによってイオン
化され、図示されていない電源によって負に印加されて
いる基板９に加速され、密着性のよいＣｒＮ膜が形成さ
れる。集束コイル７は電子ビームの蒸発原料３上での集
束状態を調整するものである。The evaporated raw material 3 is held by a TiN-coated 2 graphite crucible 1 according to the invention. The inner diameter of the crucible is 100II
IIIlφ and the crucible volume is 71. Cr vapor 6 from the evaporation raw material 3 and N2 introduced from the reaction gas introduction pipe 8
is ionized by an electron beam from a hollow cathode gun and accelerated to the substrate 9, which is negatively applied by a power source (not shown), forming a CrN film with good adhesion. The focusing coil 7 is used to adjust the focusing state of the electron beam on the evaporation source 3.
電子ビーム出力は５０ｋＷ、基板印加電圧は一１００Ｖ
、Ｎ、流量は２００ ｃｃ ／ ｍ 、蒸着時真空度は
５×１０−’ｔｏｒｒであった。この条件で成膜した膜
はＣｒＮであることがＸ線回折で確認された。第３図に
炉内温度及び真空度の変化を第４図にルツボ上高さ６０
０ ｍｍでの膜厚分布を示す、なお比較例として同一条
件でＴｉＮ被覆なしのグラファイトルツボ及びＴｉＣを
被覆したグラファイトルツボ及び水冷銅ルツボを用いた
場合も並記した。Electron beam output is 50kW, substrate applied voltage is -100V.
, N, the flow rate was 200 cc/m, and the degree of vacuum during deposition was 5 × 10-' torr. It was confirmed by X-ray diffraction that the film formed under these conditions was CrN. Figure 3 shows the changes in furnace temperature and degree of vacuum, and Figure 4 shows the height above the crucible at 60°.
The film thickness distribution at 0 mm is shown. As a comparative example, a graphite crucible without TiN coating, a graphite crucible coated with TiC, and a water-cooled copper crucible are also shown under the same conditions.
これより本発明のＴｉＮ被覆のグラファイトルツボは熱
効率がよく高速成膜が得られ、しかも放出ガス量が少な
いため短時間で排気される。またＴｉＮ被膜なしのグラ
ファイトルツボあるいはＴｉＣ被覆グラフフィトルツボ
と比較して電子ビーム発生の立上がりがきわめてスムー
ズで安定していたことも確認された。From this, the TiN-coated graphite crucible of the present invention has good thermal efficiency and can achieve high-speed film formation, and furthermore, because the amount of released gas is small, it can be evacuated in a short time. It was also confirmed that the rise of electron beam generation was extremely smooth and stable compared to a graphite crucible without a TiN coating or a graphite crucible coated with TiC.
〈発明の効果〉
以上より本発明の電子ビーム蒸発源用グラファイトルツ
ボを使用することにより、操業性および安定性にすぐれ
た高速の付着速度を伴う真空蒸着、ならびにイオンブレ
ーティングが工業的に可能となった。これにより耐食性
、耐摩耗性、装飾性等の優れた薄膜で被覆された工業製
品を効率よく生産することができるようになり、産業上
益する所大である。<Effects of the Invention> As described above, by using the graphite crucible for electron beam evaporation source of the present invention, vacuum evaporation with high deposition rate and ion blating with excellent operability and stability are industrially possible. became. This makes it possible to efficiently produce industrial products coated with a thin film that has excellent corrosion resistance, abrasion resistance, decorativeness, etc., and is of great industrial benefit.
第１図は本発明の電子ビーム蒸発源用グラファイトルツ
ボの概略図、第２図は本発明の電子ビーム蒸発源用グラ
ファイトルツボを用いたイオンブレーティング装置の概
略図、第３図は排気時間に対する炉内温度及び真空度の
変化、第４図は本発明の実施例で得られた膜厚分布を示
す図である。
ｌ・・・グラファイトルツボ、
２・・・被 膜、 ３・・・蒸発原料、４
・・・電子ビーム発生装置、 ５・・・電子ビーム、６
・・・蒸 気、 ７・・・集束コイル、８
・・・反応ガス導入管、 ９・・・基 板、１０・
・・真空チャンバー、
１１・・・ホローカソードガン。
特許出願人 川崎製鉄株式会社
第 １ 図
第３図
排気時間（分）Fig. 1 is a schematic diagram of a graphite crucible for an electron beam evaporation source of the present invention, Fig. 2 is a schematic diagram of an ion brating device using the graphite crucible for an electron beam evaporation source of the present invention, and Fig. 3 is a diagram showing a graphite crucible for an electron beam evaporation source according to the present invention. FIG. 4 is a diagram showing changes in furnace temperature and degree of vacuum, and film thickness distribution obtained in an example of the present invention. l...graphite crucible, 2...coating, 3...evaporation raw material, 4
...electron beam generator, 5...electron beam, 6
...Steam, 7...Focusing coil, 8
...Reaction gas introduction pipe, 9...Substrate, 10.
...Vacuum chamber, 11...Hollow cathode gun. Patent applicant: Kawasaki Steel Corporation Figure 1 Figure 3 Exhaust time (minutes)
Claims (1)
にて被覆したことを特徴とする電子ビーム蒸発源用ルツ
ボ。A crucible for an electron beam evaporation source, characterized in that the peripheral outer surface of the graphite crucible is coated with a high melting point metal nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32369687A JPH01165763A (en) | 1987-12-23 | 1987-12-23 | Crucible for electron-beam vaporization source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32369687A JPH01165763A (en) | 1987-12-23 | 1987-12-23 | Crucible for electron-beam vaporization source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01165763A true JPH01165763A (en) | 1989-06-29 |
Family
ID=18157579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32369687A Pending JPH01165763A (en) | 1987-12-23 | 1987-12-23 | Crucible for electron-beam vaporization source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01165763A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006111961A (en) * | 2004-09-17 | 2006-04-27 | Nippon Seiki Co Ltd | Vapor deposition source system |
| CN114622169A (en) * | 2022-04-27 | 2022-06-14 | 华天慧创科技（西安）有限公司 | Antifouling film coating device and antifouling film coating method |
-
1987
- 1987-12-23 JP JP32369687A patent/JPH01165763A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006111961A (en) * | 2004-09-17 | 2006-04-27 | Nippon Seiki Co Ltd | Vapor deposition source system |
| CN114622169A (en) * | 2022-04-27 | 2022-06-14 | 华天慧创科技（西安）有限公司 | Antifouling film coating device and antifouling film coating method |
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