TW201912820A - Evaporation method for forming metal/ceramic coating which is excellent in abrasion-resistance, temperature-resistance and friction improvement - Google Patents

Abstract

Provided is an evaporation method for forming a metal/ceramic coating, which is suitable for forming a metal or ceramic coating on a surface of a substrate. The method comprises step (a) and step (b). In step (a), at least two evaporation targets are simultaneously placed in one crucible, and at least one of the evaporation targets is a metal material. In step (b), an electron beam is used to heat the evaporation target for dissociating the same into an ionic state, and at the same time, to change the size of the electron beam bundle and the plasma distribution by adjusting the scanning and focusing, feeding, material adding system, and change of electric field or magnetic field of the electron beam to control evaporation of the evaporation target, thereby adjusting the ratio of the evaporation target in the coating film. With the aforementioned method, it is able to produce a progressive coating film, wherein the coating film is excellent in abrasion-resistance, temperature-resistance and friction improvement, and is capable of producing specific physical and chemical properties, such as mechanical property, optical property, optoelectronic property, and the like.

Description

Evaporation method for forming a metal/ceramic coating

The present invention relates to an evaporation method, and more particularly to an evaporation method for forming a coating on a substrate, and the coating comprises at least one metal or ceramic component for forming a metal/ceramic coating.

Physical Vapor Deposition (PVD) is a technique for film deposition by physical phenomena. In the development of semiconductor processes, the main physical vapor deposition includes evaporation and sputtering. The evaporation is performed by heating the target and using the saturated vapor pressure of the target at a high temperature to deposit the film. The sputtering uses the ions generated by the plasma to bombard the target and make the gas of the plasma. The particles having the target in the phase form a coating when the particles are deposited on the substrate. Since the ion dissociation rate generated by the general sputtering method is not high, it is not easy to produce a coating film having good adhesion and reactivity.

The evaporation can be divided into a thermal evaporation type, an arc heating type, an electron beam heating type (EB), and a Hollow Cathode Discharge (HCD), among which the arc type coating is different depending on the evaporation source. The film formed by the method is rough, and the hollow cathode discharge type can produce high dissociation rate and excellent adhesion, and the quality of the coating is smooth and detailed, but whether it is a hollow cathode discharge type or an electron beam heating type, electron beam heating is used. An evaporation target placed in a crucible, and evaporating the evaporation target to form a coating, or forming a vapor-deposited ceramic film by a gas reaction, but these metal or non-metal targets have different melting points And the boiling point, therefore, the pressure required for melt evaporation in the same crucible is also different, so it is not easy to control the ratio of the components in the coating to control the target of two or more metals or non-metals.

It is an object of the present invention to provide an evaporation process for forming a metal/ceramic coating that overcomes at least one of the disadvantages of the prior art.

The evaporation method of the present invention is suitable for forming a metal plating film or a ceramic coating film on a surface of a substrate, the method comprising: Step (a): simultaneously placing at least two vapor deposition targets in one crucible, the evaporation At least one of the targets is a metal material; and step (b): heating and dissociating the vapor deposition target by an electron beam to form an ionic state, while adjusting a focusing, feeding, and feeding system of the electron beam, The change of the electric field or the magnetic field changes the size of the electron beam bundle and the plasma distribution to control the evaporation of at least one vapor deposition target, thereby adjusting the proportion of the vapor deposition target in the coating.

The vapor deposition target according to the present invention is not particularly limited, and is mainly selected according to the needs of a metal plating film or a ceramic plating film, and the vapor deposition target material may be selected from the group consisting of aluminum (Al), titanium (Ti), and chromium ( An element or alloy of a metal or a metalloid such as Cr), gold (Au), platinum (Pt), palladium (Pd), nickel (Ni), silver (Ag), bismuth (Si).

The coating film of the present invention may be a metal plating film or a ceramic coating film, which is a multi-layer structure formed in a progressive manner, and the bonding force between the film layers can be improved by gradually changing between the film layers, and the film is improved. Internal stresses to achieve wear resistance, temperature resistance, improved friction, and the production of mechanical, optical, optoelectronic and other specific physical and chemical properties. The specific coatings are: TiSiN, TiAlN, AlTiN, TiAlCrN, AlCrN, TiAlSiN, AlTiSiN, CrSiN, TiAlSiN, TiCrN, diamond-like carbon (DLC) containing ruthenium, diamond-like carbon film containing metal, And a diamond-like carbon film containing bismuth and metal, or the like, or a carbide of the foregoing composition.

The evaporation method of the present invention is carried out in a vacuum environment, and a reaction gas may be introduced according to necessity, and the reaction gas may be selected from the group consisting of: N ₂ , O ₂ , CH ₄ , SiH ₄ , Si(CH ₃ ) _{4 .} , C ₂ H ₂ , BH ₃ , and B ₂ H ₆ and the like containing N, O, C, Si, B gas, N ₂ gas is introduced into the processing environment, a metal nitride film can be formed, and O _{2 is introduced.} The gas can form a metal oxide film, and a reaction gas containing carbon atoms can be introduced to generate a metal carbonized film, and a reaction gas containing a ruthenium atom can be introduced to generate a metal ruthenium film, and two or more kinds of reaction gases can be introduced to generate a metal. A ceramic magnetized film of nitrogen, oxygen, carbon, bismuth and boron.

The effect of the invention is that the above method can produce a progressive metal coating or ceramic coating, and thus the coating has wear resistance, temperature resistance, friction improvement, and production of specific physical and chemical properties such as mechanical, optical, photoelectric, and the like. nature.

Referring to Figures 1 and 2, a first embodiment of the evaporation method of the present invention is carried out by means of an evaporation apparatus 1 which forms a coating 101 on the surface of a substrate 10 and which comprises a cavity The body 11 has a hollow chamber 111, and the vapor deposition apparatus 1 further includes a crucible 12 and an electron gun installed in the chamber 111 for a plurality of vapor deposition targets 121. The electron beam generator 13 of the vapor deposition target 121, an intake pipe 14, which can supply a reaction gas into the chamber 111, an activation electrode 15, and at least one electromagnetic coil 16 can be melted. The vapor deposition target 121 is a metal element or an alloy. The electromagnetic coil 16 can also be an electrode, which can be arranged in parallel as shown in the embodiment, or can surround the cavity 11 in a circular shape, which can be used alone or in combination.

The vapor deposition method of the present invention is to form a metal or ceramic coating film 101 on the surface of the substrate 10, and comprises:

Step (a): arranging the vapor deposition target 121 having different compositions in the crucible 12, and the vapor deposition target 121 may be selected from the group consisting of aluminum (Al), titanium (Ti), and chromium (Cr). Gold (Au), platinum (Pt), palladium (Pd), nickel (Ni), silver (Ag), bismuth (Si), but not limited to the foregoing examples.

Step (b): generating an electron beam by the electron beam generator 13, heating one of the vapor deposition targets 121 to dissociate to form an ionic state, that is, by adjusting the scanning focus, feeding, and feeding of the electron beam The change of the electron beam size and the plasma distribution is changed by the addition system, the electric field or the magnetic field to control the evaporation of the vapor deposition target 121, and the ratio of the vapor deposition target 121 in the plating film 101 is adjusted.

Further, in the step (b), the embodiment can pass a reactive gas from the vent pipe 14, and the type of the reaction gas is determined according to the composition of the plating film 101, for example, if The plating film 101 evaporated on the surface of the substrate 10 is TiSiN, and it is necessary to pass N ₂ from the inlet pipe 14. If carbide is to be formed, C ₂ H _{2 is introduced} , and so on. The method of producing the progressive coating 101 is carried out. Since the film layers of the coating film 101 are progressively vapor-deposited, a good bonding force between the film layers is provided, and the internal stress of the coating film 101 can be improved. At the same time, the coating 101 has wear resistance, temperature resistance, friction improvement, and specific physical and chemical properties such as mechanical, optical, photoelectric, and the like.

Referring to FIG. 3, a second embodiment of the evaporation method of the present invention is also performed by the evaporation apparatus 1. The second embodiment differs from the first embodiment in that the electron beam generator 13 is a hollow cathode tube. The form is that a direct current is applied between the cathode tube and the auxiliary anode and argon gas is introduced to generate an argon ion glow discharge, and the argon ions bombard the cathode tube under the electric field, and a large amount of hot electrons can be emitted to form a plasma. The electron beam is directed to the crucible 12, and the vapor deposition target (not shown) placed in the crucible 12 is heated to form a vapor, and the same invention can be achieved by changing the manner in which the electron beam is generated. purpose.

Referring to Fig. 4, a third embodiment of the evaporation method of the present invention is also carried out by the vapor deposition apparatus 1. The vapor deposition apparatus 1 used in the third embodiment is similar to the first embodiment except that: Two substrates 10 standing upright and spaced apart from each other may be disposed in the chamber 111, and the crucible 12 and the electron beam generator 13 are disposed above and below and between the substrates 10. The same object of the invention can be attained by changing the structure of the vapor deposition apparatus 1.

However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the simple equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still Within the scope of the invention patent.

1‧‧‧vapor deposition equipment

10‧‧‧Substrate

101‧‧‧ coating

11‧‧‧ cavity

111‧‧‧ chamber

12‧‧‧ Shabu Shabu

121‧‧‧Extruding target

13‧‧‧Electron beam generator

14‧‧‧Intake pipe

15‧‧‧Activation electrode

16‧‧‧Electromagnetic coil

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: Figure 1 is a schematic diagram of a first embodiment of the vapor deposition method of the present invention, illustrating the evaporation method Figure 2 is a plan view of the first embodiment, mainly illustrating a crucible of the vapor deposition apparatus; Figure 3 is a schematic view of a second embodiment of the evaporation method of the present invention, The vapor deposition apparatus will be described; and FIG. 4 is a schematic view of a third embodiment of the vapor deposition method of the present invention, which is also an illustration of the vapor deposition apparatus.

Claims (4)

An evaporation method for forming a metal/ceramic coating, which is suitable for forming a coating on a surface of a substrate, the method comprising: Step (a): simultaneously placing at least two vapor deposition targets in a crucible, At least one of the vapor deposition targets is a metal material; and step (b): heating and dissociating the vapor deposition target by an electron beam to form an ionic state, while adjusting the focus, feeding, and adding of the electron beam by scanning The change of the material system, the electric field or the magnetic field changes the size of the electron beam bundle and the plasma distribution to control the evaporation of the at least one vapor deposition target, thereby adjusting the proportion of the vapor deposition target in the coating. The vapor deposition method for forming a metal/ceramic coating according to claim 1, wherein the plating film is selected from the group consisting of TiSiN, TiAlN, AlTiN, TiAlCrN, AlCrN, TiAlSiN, AlTiSiN, CrSiN, TiAlSiN, TiCrN, and yttrium containing A diamond-like carbon film, a diamond-like carbon film containing metal, and a diamond-like carbon film containing tantalum and metal. An evaporation method for forming a metal/ceramic coating according to claim 1, wherein the electron beam is generated by an electron beam generator selected from the group consisting of an electron gun and a hollow cathode tube. The vapor deposition method for forming a metal/ceramic coating according to claim 1, wherein a reaction gas is introduced in the step (b), and the reaction gas may be selected from the group consisting of: N, O, C, Si and B gas.