JPH01160827U - - Google Patents
Info
- Publication number
- JPH01160827U JPH01160827U JP4920488U JP4920488U JPH01160827U JP H01160827 U JPH01160827 U JP H01160827U JP 4920488 U JP4920488 U JP 4920488U JP 4920488 U JP4920488 U JP 4920488U JP H01160827 U JPH01160827 U JP H01160827U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- boat
- pressure cvd
- long enough
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 claims 1
Description
第1図は本考案装置の第1実施例の簡略断面図
、第2図は第2実施例の簡略断面図、第3図は本
考案における内側反応管の斜視図、第4図は従来
装置の一例を示す簡略断面図、第5図は従来装置
の他例を示す簡略断面図である。
1……内側反応管、2……外側反応管、3……
ウエーハ、4……ボート、5……ロングノズル、
5a……ガス導入口、6……シヨートノズル、6
a……ガス導入口、7……フランジ部、8……排
気口、9……排気孔、10,10a〜10d……
ヒータ。
Fig. 1 is a simplified cross-sectional view of the first embodiment of the device of the present invention, Fig. 2 is a simplified cross-sectional view of the second embodiment, Fig. 3 is a perspective view of the inner reaction tube in the present invention, and Fig. 4 is a conventional device. FIG. 5 is a simplified sectional view showing another example of the conventional device. 1...Inner reaction tube, 2...Outer reaction tube, 3...
wafer, 4...boat, 5...long nozzle,
5a...Gas inlet, 6...Short nozzle, 6
a... Gas inlet, 7... Flange portion, 8... Exhaust port, 9... Exhaust hole, 10, 10a to 10d...
heater.
Claims (1)
室構造と外側反応管2の周囲に設けられたヒータ
10とを有する減圧CVD装置において、内側反
応管1内に挿入された多数枚のウエーハ3を保持
するボート4の終端付近に届く長さのロングノズ
ル5と、ボート4の始端付近に届く長さのシヨー
トノズル6とをフランジ部7に設け、内側反応管
1の中央部付近には排気口8に連通する排気孔9
を設けてなる減圧CVD装置。 In a low-pressure CVD apparatus having a reaction chamber structure double-structured with inner and outer reaction tubes 1 and 2 and a heater 10 provided around the outer reaction tube 2, a large number of sheets inserted into the inner reaction tube 1 are used. A long nozzle 5 long enough to reach near the end of the boat 4 holding the wafers 3 and a short nozzle 6 long enough to reach near the start end of the boat 4 are provided on the flange 7, and near the center of the inner reaction tube 1. is an exhaust hole 9 communicating with the exhaust port 8
A low pressure CVD device equipped with
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4920488U JPH01160827U (en) | 1988-04-11 | 1988-04-11 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4920488U JPH01160827U (en) | 1988-04-11 | 1988-04-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01160827U true JPH01160827U (en) | 1989-11-08 |
Family
ID=31275320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4920488U Pending JPH01160827U (en) | 1988-04-11 | 1988-04-11 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01160827U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020017729A (en) * | 2018-07-24 | 2020-01-30 | エルジー エレクトロニクス インコーポレイティド | Vapor deposition equipment for solar cell and deposition method using the same |
-
1988
- 1988-04-11 JP JP4920488U patent/JPH01160827U/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020017729A (en) * | 2018-07-24 | 2020-01-30 | エルジー エレクトロニクス インコーポレイティド | Vapor deposition equipment for solar cell and deposition method using the same |
US10971646B2 (en) | 2018-07-24 | 2021-04-06 | Lg Electronics Inc. | Chemical vapor deposition equipment for solar cell and deposition method thereof |