JPH01160009A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH01160009A JPH01160009A JP31926487A JP31926487A JPH01160009A JP H01160009 A JPH01160009 A JP H01160009A JP 31926487 A JP31926487 A JP 31926487A JP 31926487 A JP31926487 A JP 31926487A JP H01160009 A JPH01160009 A JP H01160009A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tisix
- tin
- diffusion layer
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 24
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 24
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 24
- 238000010438 heat treatment Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- -1 Silicon ions Chemical class 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 229910021332 silicide Inorganic materials 0.000 abstract description 3
- 230000001133 acceleration Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 230000006378 damage Effects 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910008486 TiSix Inorganic materials 0.000 description 24
- 239000000758 substrate Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 229910010979 Ti—Six Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［概要］
半導体装置の製造方法のうち、電極配線の形成方法に関
し、
ＴｉＳｉｘ膜とデバイスとに悪影響を与えることな（、
ＴｉＳｉｘ膜とＡＩ （アルミニウム）との間にＴｉＮ
膜を介在させることを目的とし、
チタンシリサイド（ＴｉＳｉｘ ） ＩＩ！を重ねた拡
散層の上に絶縁膜を被覆し、該絶縁膜を窓開けして前記
チタンシリサイド膜を電極窓内に露出させる工程、次い
で、前記電極窓内に露出したチタンシリサイド膜にイオ
ン注入してアモルファス化し、アモルファスチタンシリ
サイド膜を形成する工程、次いで、窒素雰囲気中で熱処
理して前記アモルファスチタンシリサイド膜をチタンナ
イトライド（ＴｉＮ）膜に変成する工程が含まれてなる
ことを特徴とする。[Detailed Description of the Invention] [Summary] Among the methods for manufacturing semiconductor devices, there is a method for forming electrode wiring that does not adversely affect the TiSix film and the device.
TiN between TiSix film and AI (aluminum)
For the purpose of interposing a film, titanium silicide (TiSix) II! A step of coating an insulating film on the overlapping diffusion layer, opening a window in the insulating film to expose the titanium silicide film within the electrode window, and then implanting ions into the titanium silicide film exposed within the electrode window. The method is characterized by comprising the steps of: converting the amorphous titanium silicide film into amorphous material to form an amorphous titanium silicide film; and then heat-treating the amorphous titanium silicide film in a nitrogen atmosphere to transform the amorphous titanium silicide film into a titanium nitride (TiN) film. .
［産業上の利用分野］
本発明は半導体装置の製造方法のうち、電極配線の形成
方法に関する。[Industrial Field of Application] The present invention relates to a method of forming electrode wiring among methods of manufacturing a semiconductor device.
ＩＣやＬＳＩなどの半導体装置は益々高密度化。Semiconductor devices such as ICs and LSIs are becoming increasingly dense.
高集積化され、それに伴って電極配線も微細化されてい
るが、電極配線の微細化は配線抵抗の増大をきたし、現
在、この配線抵抗を低下させるための検討が続けられて
いる。As integration becomes higher, the electrode wiring becomes finer, but the finer electrode wiring leads to an increase in wiring resistance, and studies are currently being carried out to reduce this wiring resistance.
［従来の技術と発明が解決しようとする問題点］半導体
装置の配線材料として、近年、タングステンシリサイド
、モリブデンシリサイＦ′、白金シリサイドやチタンシ
リサイドなどの高融点金属シリサイドが用いられており
、これは従前からの導電性多結晶シリコンと比べて電気
抵抗が低い利点があるからである。[Prior art and problems to be solved by the invention] In recent years, high melting point metal silicides such as tungsten silicide, molybdenum silicide F', platinum silicide, and titanium silicide have been used as wiring materials for semiconductor devices. This is because it has the advantage of lower electrical resistance than conventional conductive polycrystalline silicon.
一方、半導体装置が微細化され、半導体基板内に設ける
不純物拡散層も低濃度な浅い層になるために抵抗の増加
をきたし、その拡散層を低抵抗化するために拡散層にチ
タンシリサイドを重ね合わせた構造とその形成法が提案
されている。それはチタン（Ｔｉ）がシリコン基板や絶
縁膜との密着性が良く、且つ、チタンシリサイド（Ｔｉ
Ｓｉｘ ）はシリサイドの中で最も電気抵抗が低いため
に考案された方式で、そのように構成すれば拡散層を低
抵抗化することができる。On the other hand, as semiconductor devices become smaller, the impurity diffusion layer provided in the semiconductor substrate also becomes a shallow layer with a low concentration, resulting in an increase in resistance.In order to lower the resistance of the diffusion layer, titanium silicide is layered on the diffusion layer. A combined structure and its formation method are proposed. This is because titanium (Ti) has good adhesion to silicon substrates and insulating films, and titanium silicide (Ti
Six) is a method devised because it has the lowest electrical resistance among silicides, and if configured in this way, it is possible to lower the resistance of the diffusion layer.
第２図はそのＴｉＳｉ２を拡散層に重ねて低抵抗化した
メタル拡散層の例を示している。図中、■はｐ型シリコ
ン基板、２はゲート絶縁膜、３はゲート電極、４は絶縁
膜、５はｎ型ソース層、６はｎ型ドレイン層、７はアル
ミニウム（八１）電極配線であるが、ｎ型ソース層５お
よびｎ型ドレイン層６に重ねたＴｉＳｉｘからなるメタ
ルソース層８およびメタルドレイン層９が設けられてお
り、この構成によって拡散層が低抵抗化される。尚、こ
のＴｉＳｉｘ層はシリコン基板にＴｉ膜をスパック法で
被着し、窒素中の５００〜６００°Ｃにおいて高速アニ
ールすると形成される。FIG. 2 shows an example of a metal diffusion layer in which resistance is reduced by overlapping TiSi2 on the diffusion layer. In the figure, ■ is a p-type silicon substrate, 2 is a gate insulating film, 3 is a gate electrode, 4 is an insulating film, 5 is an n-type source layer, 6 is an n-type drain layer, and 7 is an aluminum (81) electrode wiring. However, a metal source layer 8 and a metal drain layer 9 made of TiSix are provided over the n-type source layer 5 and n-type drain layer 6, and this structure lowers the resistance of the diffusion layer. Incidentally, this TiSix layer is formed by depositing a Ti film on a silicon substrate by a spackle method and then performing high-speed annealing at 500 to 600° C. in nitrogen.
ところが、このＴｉＳｉｘとＡＩ電極とのコンタクト（
接続）部（第２図において、１０はコンタクト部を示す
）が問題であり、ＴｉＳｉｘとＡ１とを接触させて温度
４００〜５００℃の低温度でアニール（熱処理）すると
両者が著しく反応して合金化し、そのために近接した拡
散層と基板とのｐｎ接合部が影響され、ｐｎ接合に欠陥
が生じてリーク電流が増大し、且つ、ＴｉＳｉｘと八１
との接触部で接触抵抗が増加すると云う欠点がある。However, the contact between this TiSix and the AI electrode (
The problem is the connection part (10 indicates the contact part in Figure 2), and when TiSix and A1 are brought into contact and annealed (heat treated) at a low temperature of 400 to 500 degrees Celsius, the two react markedly and form an alloy. This affects the pn junction between the nearby diffusion layer and the substrate, causing defects in the pn junction and increasing leakage current.
There is a drawback that contact resistance increases at the contact point with.
従って、現在、ＴｉＳｉｘとＡＩとの間に、バリアメタ
ル（拡散防止膜）としてチタンナイトライド（窒化チタ
ン； ＴｉＮ （Ｔｉｔａｎ Ｎ１ｔｒｉｄｅ））膜
を介在させる方法が考案されており、次に、そのＴ ｊ
Ｎ ｌ！Ｊを介在させてＡｌ／ＴｉＮ配線を形成する従
来の形成方法を説明する。Therefore, a method is currently being devised in which a titanium nitride (TiN (Titan N1tride)) film is interposed as a barrier metal (diffusion prevention film) between TiSix and AI.
Nl! A conventional method of forming an Al/TiN wiring with J interposed therein will be described.
第３図（ａｌ〜（ｇ＋はメタル拡散層にＡｌ／ＴｉＮ配
線を接続する従来の形成方法の工程順断面図を示してお
り、順を追って説明すると
第３図（ａｌ参照；まず、ｐ型シリコン基板１１上に公
知のＬＯＣＯ３法によってフィールド絶縁膜１２を形成
した後、砒素イオンを注入し、熱処理炉で熱処理（アニ
ール）してｎ型拡散層１３（膜厚２５００〜３５００人
）を形成する。Figure 3 (al~(g+) shows a step-by-step cross-sectional view of the conventional forming method for connecting Al/TiN wiring to a metal diffusion layer. After forming a field insulating film 12 on a silicon substrate 11 by the well-known LOCO3 method, arsenic ions are implanted and heat-treated (annealed) in a heat treatment furnace to form an n-type diffusion layer 13 (film thickness: 2,500 to 3,500 layers). .
第３図［ｂ）参照；次いで、スパッタ法によりＴｉ膜１
４（膜厚６００人前後）を被着する。See FIG. 3 [b); Next, the Ti film 1 is formed by sputtering.
4 (film thickness around 600 people).
第３図（Ｃ）参照；次いで、窒素中で５００〜６００°
Ｃにおいてランプアニール等によって高速アニールする
。そうすると、Ｔｉ膜１４と基板１１とが反応してＴｉ
Ｓｉｘ膜１５が形成されるが、その際、フィールド絶縁
膜上など、シリコン基板と接していない部分のＴｉ膜１
４はＴｉＮ膜１４′に変化する。See Figure 3(C); then 500-600° in nitrogen.
At C, high-speed annealing is performed by lamp annealing or the like. Then, the Ti film 14 and the substrate 11 react and the Ti film 14 reacts with the substrate 11.
The Six film 15 is formed, but at this time, the Ti film 1 on the part not in contact with the silicon substrate, such as on the field insulating film, is formed.
4 changes into a TiN film 14'.
第３図Ｆｄｌ参照；次いで、そのＴｉＮ膜１４′を過酸
化水素とアンモニアとの混合液、または過酸化水素と硫
酸との混合液によってエツチング除去する。Refer to FIG. 3 Fdl; Next, the TiN film 14' is etched away using a mixture of hydrogen peroxide and ammonia or a mixture of hydrogen peroxide and sulfuric acid.
第３図ｔｅｌ参照；次いで、絶縁膜１６（膜厚０．３〜
０．４ μｍ）を被着し、フォトプロセスを用いて旧配
線を接続するための１μｍ角程度の電極窓１７を窓開け
する。Refer to tel in FIG. 3; Next, insulating film 16 (thickness 0.3~
0.4 .mu.m), and a photo process is used to open an electrode window 17 of about 1 .mu.m square for connecting the old wiring.
第３図（ｆｌ参照；次いで、上面に反応性スパッタ法に
よってＴｉＮ膜１８（膜厚１０００Å以下）を被着し、
更に、その上にスパッタ法によって旧膜１９（膜厚３０
００Å以上）を被着する。FIG. 3 (see fl; next, a TiN film 18 (film thickness of 1000 Å or less) is deposited on the upper surface by reactive sputtering,
Furthermore, the old film 19 (thickness 30
00 Å or more).
第３図Ｆｇｌ参照；次いで、フォトプロセスを用いて、
上面にレジスト膜２０をマスクし、塩素系ガスを用いた
りアクティブイオンエツチング（ＲＩ Ｅ）によってＡ
Ｉ膜１９およびＴｉＮ膜１８をパターンニングしてＴｉ
Ｎ膜を介したＡＩ配線を形成し、最後にしシスト膜２０
のマスクを有機溶剤で剥離除去する。See Figure 3 Fgl; then, using a photo process,
A resist film 20 is masked on the upper surface, and A is etched using chlorine-based gas or active ion etching (RIE).
By patterning the I film 19 and the TiN film 18,
AI wiring is formed through the N film, and finally the cyst film 20 is formed.
Remove the mask using an organic solvent.
なお、第３図（ｇｌは第３図（ｆ）の電極窓部のＦＦ断
面図（第３図（ｆ）に垂直な断面図）を示している。Note that FIG. 3 (gl indicates an FF sectional view (a sectional view perpendicular to FIG. 3(f)) of the electrode window portion of FIG. 3(f).
ところが、上記の形成方法において、＾１／ＴｉＮ膜を
パターンニングするためのエツチング除去が非常に難し
く、溶液中ではΔｌの電位がＴｉＮの電位より低いため
に電池反応が生じて、レジスト膜の剥離除去の際にＡＩ
が有機溶剤液に溶解して、ＡＩ配線が所定形状に精度良
く形成されないと云う問題がある。However, in the above formation method, it is very difficult to remove the etching for patterning the ^1/TiN film, and because the potential of Δl is lower than the potential of TiN in the solution, a cell reaction occurs and the resist film peels off. AI during removal
There is a problem in that the AI wiring cannot be formed in a predetermined shape with high accuracy due to dissolution in the organic solvent solution.
一方、他の方法として、メタル拡散層を形成し、絶縁膜
を被覆して電極窓１７を窓開けした後、窒素雰囲気中で
熱処理して電極窓内にＴｉＮ膜を生成する方法が考えら
れる。しかし、このＴｉＮ膜を被着せずに、窒素（Ｎ）
中でＴｉＮ膜を生成する方法は、その熱処理が９５０℃
以上、３０分程度の高温長時間が必要になり、そのよう
な高温度で長時間熱処理するとＴｉＳｉｘ膜１５が膜数
５と反応して拡散層を浸食し、甚だしい場合はｐｎ接合
を破壊することになる。即ち、物質の熱処理温度は溶融
点×０．６程度が最高処理温度であり、ＴｉＳｉｘ膜の
場合はそれが８６０℃程度であるから、それより高く加
熱すると反応が激しく、ＴｉＳｉｘ膜とデバイスが破壊
される。On the other hand, as another method, a method can be considered in which a metal diffusion layer is formed, an insulating film is covered, the electrode window 17 is opened, and then a TiN film is generated in the electrode window by heat treatment in a nitrogen atmosphere. However, without depositing this TiN film, nitrogen (N)
The method for producing a TiN film inside is that the heat treatment is at 950°C.
As mentioned above, a high temperature and long time of about 30 minutes is required, and if the heat treatment is carried out at such a high temperature for a long time, the TiSix film 15 will react with the film number 5 and erode the diffusion layer, and in severe cases, the pn junction will be destroyed. become. In other words, the maximum heat treatment temperature for a substance is approximately 0.6 times the melting point, and in the case of a TiSix film, it is approximately 860°C, so heating higher than that will cause a violent reaction and destroy the TiSix film and device. be done.
本発明は上記の問題点を解消させて、ＴｉＳｉｘ膜とデ
バイスとに悪影響を与えることなく ＴｉＳｉｘ膜とＡ
Ｉとの間にＴｉＮ膜を介在させることを目的とした形成
方法を提案するものである。The present invention solves the above problems and allows the TiSix film and A
This paper proposes a formation method for the purpose of interposing a TiN film between the TiN film and the TiN film.
［問題点を解決するための手段］
その目的は、チタンシリサイド（ＴｉＳｉｘ ）膜を重
ねた拡散層の上に絶縁膜を被覆し、該絶縁膜を窓開けし
て前記チタンシリサイド膜を電極窓内に露出させる工程
、次いで、前記電極窓内に露出したチタンシリサイド膜
にイオン注入してアモルファス化し、アモルファスチタ
ンシリサイド膜を形成する工程、次いで、窒素雰囲気中
で熱処理して前記アモルファスチタンシリサイド膜をチ
タンナイトライド（ＴｉＮ）膜に変成する工程が含まれ
る半導体装置の製造方法によって達成される。[Means for solving the problem] The purpose is to coat an insulating film on a diffusion layer in which a titanium silicide (TiSix) film is stacked, open a window in the insulating film, and insert the titanium silicide film into the electrode window. Next, a step of implanting ions into the titanium silicide film exposed in the electrode window to make it amorphous to form an amorphous titanium silicide film, and then heat-treating the amorphous titanium silicide film in a nitrogen atmosphere to make the amorphous titanium silicide film amorphous. This is achieved by a method for manufacturing a semiconductor device that includes a step of transforming into a nitride (TiN) film.
［作用コ
即ち、本発明は、ＴｉＮ膜に変成させるＴｉＳｉｘ膜部
分に、ＴｉＳｉｘの導電性などの膜質を変化させない材
料のイオンを注入して、その結晶性を破壊させてアモル
ファス化した後、窒素雰囲気中で熱処理してＴｉＮ膜を
形成する。そうすると、ＴｉＮ膜を形成する熱処理温度
は低温度、短時間となって、ＴｉＳｉｘ膜とデバイスと
に悪影響を与えることかない。[In other words, in the present invention, ions of a material that does not change the film quality such as conductivity of TiSix are implanted into the TiSix film portion to be transformed into a TiN film to destroy its crystallinity and make it amorphous. A TiN film is formed by heat treatment in an atmosphere. In this case, the heat treatment temperature for forming the TiN film is low and for a short time, so that it does not adversely affect the TiSix film and the device.
［実施例コ 以下、図面を参照して実施例によって詳細に説明する。[Example code] Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図ｆａｌ〜Ｆｇ）は本発明にかかる形成方法の工程
順断面図である。FIGS. 1 (fal to Fg) are cross-sectional views in the order of steps of the forming method according to the present invention.
第１図（ａ）参照；従来例と同様に、ｐ型シリコン基板
１１上にフィールド絶縁膜１２を形成した後、砒素イオ
ンを注入し、熱処理炉で９５０〜１０００℃で熱処理し
てｎ型拡散層１３（膜厚２５００〜３５００人）を形成
する。See FIG. 1(a); similar to the conventional example, after forming a field insulating film 12 on a p-type silicon substrate 11, arsenic ions are implanted and heat-treated at 950 to 1000°C in a heat treatment furnace for n-type diffusion. Layer 13 (thickness: 2,500 to 3,500 layers) is formed.
第１図（ｂｌ参照；次いで、スパッタ法によりＴｉ膜膜
種４膜厚６００人前後）を被着する。FIG. 1 (see BL; Next, a Ti film of 4 types and a thickness of about 600 layers) is deposited by sputtering.
第１図（Ｃ）参照；次いで、窒素中で５００〜６００℃
においてランプアニール等によって高速アニールして、
Ｔｉ膜膜種４基板１１とを反応させてＴｉＳｉｘ膜（膜
厚１０００〜１２００人）１５を形成する。その際、フ
ィールド絶縁膜上など、シリコン基板と接していない部
分のＴｉ膜膜種４ＴｉＮ膜１４′に形成される。See Figure 1 (C); then at 500-600°C in nitrogen.
high-speed annealing by lamp annealing etc.
The Ti film type 4 is reacted with the substrate 11 to form a TiSix film 15 (thickness: 1000 to 1200). At this time, the Ti film type 4TiN film 14' is formed on a portion of the Ti film 14' that is not in contact with the silicon substrate, such as on the field insulating film.
第１図（ｄ）参照；次いで、そのＴｉＮ膜１４１を過酸
化水素とアンモニアとの混合液、または過酸化水素と硫
酸との混合液によってエツチング除去した後、化学気相
成長（ＣＶ Ｄ）法によって絶縁膜１６（膜厚０．３〜
０．４μｍ）を被着し、フォトプロセスを用いて１μｍ
角程度の電極窓（スルーホール）１７を窓開けする。以
上の工程は従来法と同様である。See FIG. 1(d); Next, the TiN film 141 is removed by etching with a mixture of hydrogen peroxide and ammonia or a mixture of hydrogen peroxide and sulfuric acid, and then chemical vapor deposition (CVD) is performed. The insulating film 16 (thickness 0.3~
0.4 μm) and 1 μm using photo process.
An electrode window (through hole) 17 about the size of a corner is opened. The above steps are similar to the conventional method.
第１図（ｅ）参照；次いで、上面からシリコンイオン（
Ｓｉ” ）を注入して、電極窓１７内のＴｉＳｉｘ膜の
結晶を壊してアモルファスチタンシリサイド（α−Ｔｉ
Ｓｉｘ ）膜２１にする。イオン注入条件は加速電圧７
０ＫｅＶ、ドーズ量５×１０％程度である。なお、注入
イオンはＳｉの他に窒素（Ｎ）や砒素（Ａｓ） 、燐（
Ｐ）等の不純物、あるいは、ＮとＡｓとの混合物を用い
ても良い。See Figure 1(e); Next, silicon ions (
Amorphous titanium silicide (α-Ti) is implanted to break the crystal of the TiSix film within the electrode window 17.
Six) film 21. Ion implantation conditions are acceleration voltage 7
0 KeV and a dose of about 5×10%. In addition to Si, the implanted ions include nitrogen (N), arsenic (As), and phosphorus (
Impurities such as P) or a mixture of N and As may also be used.
第１図（ｆｌ参照；次いで、窒素雰囲気中で９００°Ｃ
２１０分程度の熱処理をすると、電極窓内のα−ＴｉＳ
ｉ×膜２１はＴｉＮ膜２１′に変成される。この時、そ
の熱処理温度は比較的低温度で、しかも、短時間である
からＴｉＳｉｘ膜１５は膜数５度１時間に耐えられ、膜
質が変化してＴｉＳｉｘ膜１５と膜数５１３とが反応し
たり、ｐｎ接合が破壊されることはない。Figure 1 (see fl; then heated to 900°C in a nitrogen atmosphere)
After heat treatment for about 210 minutes, α-TiS inside the electrode window
The i× film 21 is transformed into a TiN film 21'. At this time, the heat treatment temperature is relatively low and the heat treatment is for a short time, so the TiSix film 15 can withstand the heat treatment for 5 degrees for 1 hour, and the film quality changes and the TiSix film 15 and the film 513 react. Also, the pn junction will not be destroyed.
第１図（ｇｌ参照；次いで、その上にスパッタ法によっ
てへ１膜１９（膜厚３０００Å以上）を被着し、次にフ
ォトプロセスを用い、リアクティブイオンエツチング（
ＲＩＥ）によってＡＩ膜１９をパターンニングしてＡＩ
配線１９を形成する。そうすれば、レジスト膜２０マス
ク （図示していない）を有機溶剤で剥離除去しても、
ＴｉＮ膜は電極窓内にしか介在しないために、旧膜１９
が腐食されてＡ１配線の形状が崩れる問題点は解消され
る。FIG. 1 (see gl; next, a film 19 (thickness of 3000 Å or more) is deposited thereon by sputtering, followed by photoprocessing and reactive ion etching (
Patterning the AI film 19 by RIE)
Wiring 19 is formed. That way, even if the resist film 20 mask (not shown) is peeled off and removed using an organic solvent,
Since the TiN film is only present within the electrode window, the old film 19
The problem that the shape of the A1 wiring collapses due to corrosion is solved.
上記のような本発明にかかる形成方法によれば、ＴｉＳ
ｉｘ膜を重ねたメタル拡散層とへ１配線との接続が都合
良くおこなわれ、デバイス特性を劣化させることなく、
接触抵抗を減少させて配線抵抗を低下させることができ
る。According to the formation method according to the present invention as described above, TiS
The metal diffusion layer layered with the Ix film can be conveniently connected to the 1 wiring without deteriorating the device characteristics.
Wiring resistance can be lowered by reducing contact resistance.
尚、上記例はｎ型拡散層にＴｉＳｉｘ膜を重ねる実施例
で説明したが、ｎ型拡散層にＴｉＳｉｘ膜を重ねる場合
も同様であり、その場合は注入イオンがＡＳ。The above example has been explained using an example in which a TiSix film is stacked on an n-type diffusion layer, but the same applies when a TiSix film is stacked on an n-type diffusion layer, and in that case, the implanted ions are AS.
Ｐの代わりに硼素（Ｂ）や弗化硼素などを用いておこな
う。This is done using boron (B), boron fluoride, etc. instead of P.
［発明の効果］
以上の実施例の説明から明らかなように、本発明によれ
ば拡散層を低抵抗化したメタル拡散層とアルミニウムと
の接続が問題なくおこなわれ、配線抵抗を低下させるこ
とができ、ＩＣの性能向上に顕著に寄与するものである
。[Effects of the Invention] As is clear from the description of the embodiments above, according to the present invention, the metal diffusion layer with a low resistance diffusion layer and aluminum can be connected without any problem, and the wiring resistance can be reduced. This significantly contributes to improving the performance of the IC.
第１図（ａｌ〜（ｇｌは本発明にかかる形成方法の工程
順断面図、
第２図はメタル拡散層を示す図、
第３図ｆａｌ〜（ｇｌは従来の形成方法の工程順断面図
である。
図において、
１１はｐ型シリコン基板、１２はフィールド絶縁膜、１
３はｎ型拡散層、 １４はチタン（Ｔｉ）膜、１５
はチタンシリサイド（ＴｉＳｉｘ ）膜、１６は絶縁膜
、 １７は電極窓、１９はアルミニウム（ＡＩ
）膜、
２１はアモルファスチタンシリサイド（α−ＴｉＳｉｘ
）膜、
２１１はチタンナイトライド（ＴｉＮ）膜＋ＬＩ
Ｌ＋Ｉ
ｖ従来め汗幻戊方及のコ
第３１
〔蛭頒鉾曲図（ザリ２）
図Figure 1(al~(gl is a step-by-step sectional view of the forming method according to the present invention, Figure 2 is a view showing a metal diffusion layer, Figure 3 is a step-by-step sectional view of the conventional forming method. In the figure, 11 is a p-type silicon substrate, 12 is a field insulating film, and 1 is a p-type silicon substrate.
3 is an n-type diffusion layer, 14 is a titanium (Ti) film, 15
1 is a titanium silicide (TiSix) film, 16 is an insulating film, 17 is an electrode window, and 19 is an aluminum (AI) film.
) film, 21 is amorphous titanium silicide (α-TiSix
) film, 211 is titanium nitride (TiN) film + LI
L+I
v Conventional sweat illusion 31 [Hiruhoboko zu (Zari 2) fig.
Claims (1)
の上に絶縁膜を被覆し、該絶縁膜を窓開けして前記チタ
ンシリサイド膜を電極窓内に露出させる工程、 次いで、前記電極窓内に露出したチタンシリサイド膜に
イオン注入してアモルファス化し、アモルファスチタン
シリサイド膜を形成する工程、次いで、窒素雰囲気中で
熱処理して前記アモルファスチタンシリサイド膜をチタ
ンナイトライド（ＴｉＮ）膜に変成する工程が含まれて
なることを特徴とする半導体装置の製造方法。[Scope of Claims] A step of coating an insulating film on a diffusion layer overlaid with a titanium silicide (TiSi_x) film, and opening a window in the insulating film to expose the titanium silicide film in the electrode window. Step of implanting ions into the titanium silicide film exposed in the electrode window to make it amorphous to form an amorphous titanium silicide film, and then heat-treating in a nitrogen atmosphere to transform the amorphous titanium silicide film into a titanium nitride (TiN) film. 1. A method for manufacturing a semiconductor device, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31926487A JPH01160009A (en) | 1987-12-16 | 1987-12-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31926487A JPH01160009A (en) | 1987-12-16 | 1987-12-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01160009A true JPH01160009A (en) | 1989-06-22 |
Family
ID=18108258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31926487A Pending JPH01160009A (en) | 1987-12-16 | 1987-12-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01160009A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280424A (en) * | 1990-03-28 | 1991-12-11 | Sony Corp | Wiring formation process |
| JPH04226025A (en) * | 1990-04-16 | 1992-08-14 | Applied Materials Inc | Method forming titanium silicide con- ducting layer on silicon wafer |
| JPH05244576A (en) * | 1992-02-26 | 1993-09-21 | Hitachi Ltd | Transmission signal reproduction device |
| US6455875B2 (en) | 1992-10-09 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having enhanced field mobility |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1987
- 1987-12-16 JP JP31926487A patent/JPH01160009A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03280424A (en) * | 1990-03-28 | 1991-12-11 | Sony Corp | Wiring formation process |
| JPH04226025A (en) * | 1990-04-16 | 1992-08-14 | Applied Materials Inc | Method forming titanium silicide con- ducting layer on silicon wafer |
| JPH05244576A (en) * | 1992-02-26 | 1993-09-21 | Hitachi Ltd | Transmission signal reproduction device |
| US6455875B2 (en) | 1992-10-09 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having enhanced field mobility |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7109108B2 (en) | 1992-10-09 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having metal silicide |
| US7602020B2 (en) | 1992-10-09 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7723788B2 (en) | 1992-10-09 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US8017506B2 (en) | 1992-10-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
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