JPH01154584A - Array laser - Google Patents
Array laserInfo
- Publication number
- JPH01154584A JPH01154584A JP62314611A JP31461187A JPH01154584A JP H01154584 A JPH01154584 A JP H01154584A JP 62314611 A JP62314611 A JP 62314611A JP 31461187 A JP31461187 A JP 31461187A JP H01154584 A JPH01154584 A JP H01154584A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- long axis
- far field
- recording
- field pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 description 8
- 238000010583 slow cooling Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4037—Edge-emitting structures with active layers in more than one orientation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、光デイスクメモリ等の情報処理機器の光源
として使用されるアレイレーザに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an array laser used as a light source for information processing equipment such as an optical disk memory.
相変化を利用する光デイスク装置では、記録材料の結晶
−アモルファス間の相変化を利用して情報の記録・再生
・消去を行う。In an optical disk device that utilizes phase change, information is recorded, reproduced, and erased by utilizing the phase change between crystalline and amorphous recording materials.
情報の記録は、まず、絞り込んだ光スポットを記録材料
の一部に当て加熱昇温させ、記録材料を一度溶融させて
原子配列をランダムにする。次に、熱源である光スポッ
トを取り除き、熱を基板へ拡散させて結晶化速度より速
く一気に冷却して固めれば、アモルファス状態になり、
記録が行われたことになる。To record information, first, a narrowed light spot is applied to a part of the recording material and the temperature is raised to melt the recording material and make the atomic arrangement random. Next, the light spot that is the heat source is removed, the heat is diffused into the substrate, and if it is cooled and solidified at once faster than the crystallization rate, it becomes an amorphous state.
A record has been made.
情報の消去は、光スポットを記録材料の記録面に当てて
加熱昇温させ、記録材料を一度溶融させた後、徐冷して
結晶化させることにより行う。Information is erased by applying a light spot to the recording surface of the recording material, heating it up, melting the recording material once, and then slowly cooling it to crystallize it.
そして、情報の再生は、低出力の光スポットを記録面に
当て、アモルファス状態と結晶状態との反射率の差によ
る反射光量の変化を利用して行う。Information is reproduced by applying a low-output light spot to the recording surface and utilizing changes in the amount of reflected light due to the difference in reflectance between the amorphous state and the crystalline state.
この消去・記録再生を実現するには、消去時の徐冷用長
軸光スポットと記録時の急冷用短軸光スポットとを光デ
ィスクの同一トラック上に形成することが必要である。In order to realize this erasing/recording/reproduction, it is necessary to form a long-axis optical spot for slow cooling during erasing and a short-axis optical spot for rapid cooling during recording on the same track of the optical disk.
第3図(a)、(b)はそれぞれ従来のモノリシック、
ディスクリート形のアレイレーザを示す側面図である。Figures 3(a) and (b) show the conventional monolithic,
FIG. 2 is a side view showing a discrete array laser.
この図において、1は消去用レーザチップ、2は記録再
生用レーザチップ、3は放熱板である。In this figure, 1 is an erasing laser chip, 2 is a recording/reproducing laser chip, and 3 is a heat sink.
通常、モノリシック形、ディスクリート形のいずれも単
一レーザであれば、消去後光ディスクを一回転させてか
ら記録しなければならない所を、アレイ化することによ
って消去後、直ちに記録できるようにしている。Normally, with a single laser, whether monolithic or discrete, the optical disc must be rotated once after erasing before recording, but by forming an array, it is possible to record immediately after erasing.
また、通常、半導体レーザの発光部は、接合に平行な方
向に長く(例えば2〜3μm)、接合に垂直な方向に短
い(例えば0.1μm)。このためここから出射される
光の遠視野像は、回折の影響で接合に平行な方向に短く
、接合に垂直な方向に長い楕円状の断面をしている。Further, normally, the light emitting part of a semiconductor laser is long (for example, 2 to 3 μm) in the direction parallel to the junction and short (for example, 0.1 μm) in the direction perpendicular to the junction. Therefore, the far-field image of the light emitted from this part has an elliptical cross section that is short in the direction parallel to the junction and long in the direction perpendicular to the junction due to the influence of diffraction.
〔発明が解決しようとする問題点)
上記のような従来のアイレーザでは、いずれもレーザの
出射ビームの短軸方向が同一直線上に並ぶため、光ディ
スクのトラック方向に沿って記録再生および消去スポッ
トを並べると、消去スポットの長軸がトラック方向に直
交するようになる。[Problems to be Solved by the Invention] In the conventional eye lasers as described above, the short axes of the laser beams are aligned on the same straight line, so the recording/reproducing and erasing spots are arranged along the track direction of the optical disc. When lined up, the long axes of the erase spots are perpendicular to the track direction.
しかし、これでは消去スポットの短軸方向で徐冷しなけ
ればならないため十分な徐冷効果が得られず、未消去・
消し残り等不具合が発生するという問題点があった。However, this method requires slow cooling in the direction of the short axis of the erased spot, so a sufficient slow cooling effect cannot be obtained, and unerased and
There was a problem that problems such as unerased areas occurred.
この発明は、かかる問題点を解決するためになされたも
ので、徐冷に適したスポット形状のアレイレーザを得る
ことを目的とする。The present invention was made to solve this problem, and an object of the present invention is to obtain an array laser with a spot shape suitable for slow cooling.
この発明に係るアレイレーザは、発光部のうちの少なく
とも一つを、遠視野像の長軸が他の発光部の遠視野像の
長軸または短軸方向と同一線上に並ぶように配置したも
のである。In the array laser according to the present invention, at least one of the light emitting parts is arranged such that the long axis of the far field image is aligned with the long axis or short axis direction of the far field image of the other light emitting parts. It is.
この発明においては、消去用の発光部を遠視野像の長軸
方向をトラック方向に対して平行になるように配置する
ことで、消去スポットで徐冷を行うことが可能になる。In this invention, by arranging the erasing light emitting section so that the long axis direction of the far-field image is parallel to the track direction, it becomes possible to perform slow cooling at the erasing spot.
第1図はこの発明のアレイレーザの一実施例を示す側面
図である。FIG. 1 is a side view showing an embodiment of the array laser of the present invention.
この図において、第3図(a)、(b)と同一符号は同
一のものを示し、3aは2つの段差を持った放熱板で、
消去用レーザチップ1をボンディングする方が深く、他
方が浅くなっている。In this figure, the same symbols as in Figs. 3(a) and (b) indicate the same parts, and 3a is a heat sink with two steps.
The one where the erasing laser chip 1 is bonded is deeper, and the other is shallower.
この実施例では放熱板3aの深い段差の方に、消去用の
発光部としての消去用レーザチップ1を従来例に対して
90”傾けてボンディングし、浅い段差の方に記録再生
用レーザチップ2を従来例と同じ方向にボンディングし
ている。そして段差の深さを適当に設計しておくことに
より、消去用レーザチップ1と記録再生用レーザチップ
2の発光点が同一線上に並び、かつ消去用レーザチップ
1の遠視野像の長軸方向と再生用レーザチップ2の遠視
野像の短軸方向が同一線上に並ぶようにすることができ
る。In this embodiment, an erasing laser chip 1 as a light emitting part for erasing is tilted by 90'' with respect to the conventional example and bonded to the deep step of the heat sink 3a, and a recording/reproducing laser chip 2 is bonded to the shallow step. is bonded in the same direction as the conventional example.By appropriately designing the depth of the step, the light emitting points of the erasing laser chip 1 and the recording/reproducing laser chip 2 are aligned on the same line, and the erasing The long axis direction of the far field image of the laser chip 1 for reproduction and the short axis direction of the far field image of the laser chip 2 for reproduction can be arranged on the same line.
したがって、消去用出射ビーム光の長軸方向がトラック
方向と平行になり、この長袖出射ビームによって、記録
材料を徐冷することができるようになる。Therefore, the long axis direction of the emitted erasing beam becomes parallel to the track direction, and the recording material can be slowly cooled by this long emitted beam.
なお、上記実施例では消去用レーザチップ1のみ90°
回転させて組立したが、記録再生用レーザチップ2とし
て放射ビームの縦横比が小さいものを用いれば第2図に
示すように、記録再生用レーザチップ2も90°回転さ
せて長軸同士を同一線上に並べて組立てしてもよい。In the above embodiment, only the erasing laser chip 1 is 90°.
Although it was assembled by rotating the recording/reproducing laser chip 2, if the recording/reproducing laser chip 2 has a small aspect ratio of the emitted beam, the recording/reproducing laser chip 2 can also be rotated 90 degrees so that the long axes are the same as shown in Fig. 2. They may be assembled by arranging them in a line.
また、上記実施例では2点アレイレーザについて説明し
たが、例えば消去・記録・再生あるいは溶融・消去・記
録再生等のように3点以上のアレイレーザに用いること
も可能である。Further, in the above embodiment, a two-point array laser has been described, but it is also possible to use a three-point or more array laser, for example, for erasing/recording/reproducing or melting/erasing/recording/reproducing.
さらに上記実施例では、ジャンクションアップ(基板側
を放熱板にボンドする)での組立で説明したが、ジャン
クションダウンで組立てしても同様の効果がある。Further, in the above embodiment, the assembly was explained using a junction-up method (the substrate side is bonded to the heat sink), but the same effect can be obtained even if the assembly is performed using a junction-down method.
この発明は以上説明したとおり、発光部のうちの少なく
とも一つを、遠視野像の長軸が他の発光部の遠視野像の
長軸または短軸方向と同一線上に並ぶように配置したの
で、簡単な光学系、簡単な駆動系で消去・記録を連続し
て正確に行うことができるという効果がある。As explained above, the present invention is characterized in that at least one of the light emitting parts is arranged so that the long axis of the far field image is aligned with the long axis or the short axis direction of the far field image of the other light emitting parts. This has the advantage that erasing and recording can be performed continuously and accurately with a simple optical system and a simple drive system.
第1図はこの発明のアレイレーザの一実施例を示す側面
図、第2図はこの発明の他の実施例を示す側面図、第3
図は従来のアレイレーザを示す側面図である。
図において、1は消去用レーザチップ、2は記録再生用
レーザチップ、3aは放熱板である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 (外2名)第1図
第2図FIG. 1 is a side view showing one embodiment of the array laser of the present invention, FIG. 2 is a side view showing another embodiment of the invention, and FIG.
The figure is a side view showing a conventional array laser. In the figure, 1 is an erasing laser chip, 2 is a recording/reproducing laser chip, and 3a is a heat sink. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2
Claims (1)
の発光部を有するアレイレーザにおいて、前記発光部の
うちの少なくとも一つを遠視野像の長軸が他の発光部の
遠視野像の長軸または短軸方向と同一線上に並ぶように
配置したことを特徴とするアレイレーザ。In an array laser having at least light-emitting sections for erasing and recording/reproducing in the same package, the long axis of the far-field image of at least one of the light-emitting sections is such that the long axis or short axis of the far-field image of the other light-emitting section is An array laser characterized by being arranged on the same line as the axial direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62314611A JPH01154584A (en) | 1987-12-10 | 1987-12-10 | Array laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62314611A JPH01154584A (en) | 1987-12-10 | 1987-12-10 | Array laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01154584A true JPH01154584A (en) | 1989-06-16 |
Family
ID=18055382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62314611A Pending JPH01154584A (en) | 1987-12-10 | 1987-12-10 | Array laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01154584A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218471A (en) * | 1993-11-22 | 2003-07-31 | Xerox Corp | Method of generating laser diode |
JP2004079168A (en) * | 1995-04-13 | 2004-03-11 | Denso Corp | Optical head for optical recording and reproducing device |
JP2007103731A (en) * | 2005-10-05 | 2007-04-19 | Sony Corp | Optical communication module and optical communication system |
JP2010287613A (en) * | 2009-06-09 | 2010-12-24 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
-
1987
- 1987-12-10 JP JP62314611A patent/JPH01154584A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218471A (en) * | 1993-11-22 | 2003-07-31 | Xerox Corp | Method of generating laser diode |
JP2004274085A (en) * | 1993-11-22 | 2004-09-30 | Xerox Corp | Laser diode array |
JP2008263238A (en) * | 1993-11-22 | 2008-10-30 | Xerox Corp | Laser diode array |
JP2004079168A (en) * | 1995-04-13 | 2004-03-11 | Denso Corp | Optical head for optical recording and reproducing device |
JP2007103731A (en) * | 2005-10-05 | 2007-04-19 | Sony Corp | Optical communication module and optical communication system |
JP2010287613A (en) * | 2009-06-09 | 2010-12-24 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
US8687668B2 (en) | 2009-06-09 | 2014-04-01 | Mitsubishi Electric Corporation | Multi-wavelength semiconductor laser device |
US8891581B2 (en) | 2009-06-09 | 2014-11-18 | Mitsubishi Electric Corporation | Multi-wavelength semiconductor laser device |
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