JPH01153273A - Grinding method for semiconductor wafer - Google Patents

Grinding method for semiconductor wafer

Info

Publication number
JPH01153273A
JPH01153273A JP62313035A JP31303587A JPH01153273A JP H01153273 A JPH01153273 A JP H01153273A JP 62313035 A JP62313035 A JP 62313035A JP 31303587 A JP31303587 A JP 31303587A JP H01153273 A JPH01153273 A JP H01153273A
Authority
JP
Japan
Prior art keywords
polishing
wafer
semiconductor wafer
pure water
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62313035A
Other languages
Japanese (ja)
Inventor
Hiroki Akiyama
弘樹 秋山
Makoto Ozawa
誠 小沢
Chikafumi Komata
小又 慎史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP62313035A priority Critical patent/JPH01153273A/en
Publication of JPH01153273A publication Critical patent/JPH01153273A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the grinding and rinsing operationability of a semiconductor wafer and prevent the grinding unevenness and scratches by supplying grinding liquid and pure water for rinsing from either upper or lower direction of both faces of the wafer. CONSTITUTION:A semiconductor wafer 4 is held at both sides by upper and lower surface plates 1 and 2 with grinding tools 5 and 6. In this state, liquid is supplied from the supply ports 7 and 12 provided to the upper and lower surface plates 1 and 2 to the upper and lower faces of the semiconductor 4 relatively moving both faces of the wafer 4 and the grinding tools 5 and 6, and both faces of the wafer 4 are ground uniformly without scratches. In the next step, pure water is uniformly and quickly supplied from the supply ports 7 and 12 provided to the upper and lower surface plates 1 and 2 by switching selector valves 14 and 15 after the finish of grinding for rinsing both faces of the wafer 4 and suppressing oxidation to the utmost.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体ウェハの研磨方法、特に半導体ウェハの
両面を同時に研磨する方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of polishing a semiconductor wafer, and particularly to a method of simultaneously polishing both sides of a semiconductor wafer.

[従来の技術] 第2図は、半導体ウェハの両面を研磨する装置の従来例
を示すものである。
[Prior Art] FIG. 2 shows a conventional example of an apparatus for polishing both sides of a semiconductor wafer.

第2図において、1は上定盤、2は下定盤、3は1クエ
ハ支持盤、4はウェハ支持盤3に配置される半導体ウェ
ハである。ウェハ支持盤3は、上定盤1と下定盤2との
間に位置し、これらの定盤1゜2とは相対的に回転し合
うように設定されている。
In FIG. 2, 1 is an upper surface plate, 2 is a lower surface plate, 3 is a 1-wafer support plate, and 4 is a semiconductor wafer placed on the wafer support plate 3. The wafer support plate 3 is located between the upper surface plate 1 and the lower surface plate 2, and is set to rotate relative to these surface plates 1.degree.2.

上定盤1と不定5IlI2には、研磨布5及び6が接着
される。
Polishing cloths 5 and 6 are bonded to the upper surface plate 1 and the undefined portion 5IlI2.

上定盤1には研磨液の供給ロアが配設され、各供給ロア
がチューブ8を介して研磨液受皿9と接続されている。
The upper surface plate 1 is provided with polishing liquid supply lowers, and each supply lower is connected to a polishing liquid receiving tray 9 via a tube 8.

10は研磨液供給管、11は純水供給管である。10 is a polishing liquid supply pipe, and 11 is a pure water supply pipe.

このような要素を備えた装置を用いて半導体ウェハの両
面研磨を行う場合には、先ず研磨液供給管10から研磨
液を出す。この研磨液は、1度研磨液受皿9で受けた後
に、チューブ8及び供給ロアを介して上室11側から半
導体ウェハ4の設置箇所に供給される。一方、研磨液供
給時に定盤1゜2に付いた研磨布5.6がウェハ4を挟
持してウェハ両面を同時に研磨する。この作業工程が終
ると、研磨液の供給を止め、代りに純水を純水供給管1
1、チューブ8、供給ロアを介して上定盤1側から流し
、純水リンスを行い研磨が終了する。
When performing double-sided polishing of a semiconductor wafer using an apparatus equipped with such elements, first, a polishing liquid is discharged from the polishing liquid supply pipe 10. This polishing liquid is once received by the polishing liquid receiving tray 9 and then supplied from the upper chamber 11 side to the installation location of the semiconductor wafer 4 via the tube 8 and the supply lower. On the other hand, when the polishing liquid is supplied, the polishing cloths 5 and 6 attached to the surface plate 1.degree.2 sandwich the wafer 4 and simultaneously polish both surfaces of the wafer. When this work process is completed, the supply of polishing liquid is stopped and pure water is supplied to the pure water supply pipe 1 instead.
1. Flow from the upper surface plate 1 side through the tube 8 and the supply lower to perform rinsing with pure water and finish polishing.

[発明が解決しようとする問題点] この種の研磨は、半導体ウェハの製品の鏡面仕上げとし
て重要なものである。ところで、前述した如き従来技術
では、研磨液の供給が上定盤側から行うため、研磨液が
ウェハ両面に均一に供給されにくく、研磨むら、スクラ
ッチ等が発生しやすく、又、研磨終了後は素早く純水リ
ンスを行なってウェハの酸化を防がなければならないが
、純水の供給も上定盤側からのみ行われるため、ウェハ
両面に素早く純水を供給することができず、半導体ウェ
ハが多少酸化してしまう等の改善すべき点があった。
[Problems to be Solved by the Invention] This type of polishing is important for mirror finishing of semiconductor wafer products. By the way, in the conventional technology as described above, since the polishing liquid is supplied from the upper surface plate side, it is difficult to uniformly supply the polishing liquid to both sides of the wafer, which tends to cause uneven polishing, scratches, etc. It is necessary to quickly rinse the wafer with pure water to prevent oxidation of the wafer, but since pure water is only supplied from the upper surface plate side, it is not possible to quickly supply pure water to both sides of the wafer, and the semiconductor wafer is There were some points that should be improved, such as some oxidation.

本発明は以上の点に鑑みなされたものであり、その目的
とするところは、研磨及び純水リンス作業の質的向上を
図り、研磨むら、スクラッチ、酸化等の発生を有効に防
止して半導体ウェハの品質の向上化を図り得るウェハ研
磨法を提供することにある。
The present invention has been made in view of the above points, and its purpose is to improve the quality of polishing and pure water rinsing operations, and to effectively prevent the occurrence of polishing unevenness, scratches, oxidation, etc. An object of the present invention is to provide a wafer polishing method that can improve the quality of wafers.

[問題点を解決するための手段] 上記目的は、半導体ウェハの両面を研磨具付きの上下の
定盤で挟持し、この半導体ウェハの配置箇所に研磨液を
供給し、且つ前記半導体ウェハの両面と前記研磨具とを
相対的に移動させて研磨を行い、その後純水を供給して
前記半導体ウェハの両面をリンスするウェハ研磨方法に
おいて、前記研磨液及びリンス用純水の供給口を前記上
下の定盤の双方に配設し、これらの供給口を介して前記
研磨液及びリンス用純水を前記半導体ウェハの両面に上
下いずれの方向からも供給して、ウェハ研磨作業及びリ
ンス作業を行うことで達成される。
[Means for Solving the Problems] The above object is to sandwich both sides of a semiconductor wafer between upper and lower surface plates equipped with polishing tools, supply a polishing liquid to a location where the semiconductor wafer is placed, and In the wafer polishing method, the polishing is performed by relatively moving the polishing tool and the semiconductor wafer, and then pure water is supplied to rinse both sides of the semiconductor wafer. The polishing liquid and the rinsing pure water are supplied to both sides of the semiconductor wafer from both sides of the semiconductor wafer from above and below through these supply ports to perform wafer polishing and rinsing operations. This is achieved by

[作  用] このような構成よりなる本発明によれば、ウェハ研磨作
業工程時には研磨液を、リンス作業工程時には純水を半
導体ウェハの両面に上下いずれの方向からも供給できる
。従って、ウェハ研磨作業工程時には研磨液をウェハ両
面に均一に供給し、研磨むら、スクラッチ等の発生を有
効に防止する。
[Function] According to the present invention having such a configuration, a polishing liquid can be supplied during the wafer polishing process, and pure water can be supplied from both sides of the semiconductor wafer from above and below during the rinsing process. Therefore, during the wafer polishing process, the polishing liquid is uniformly supplied to both surfaces of the wafer, effectively preventing the occurrence of polishing unevenness, scratches, etc.

又、リンス作業工程時にも、純水をウェハ両面に均−且
つ素早く供給して、ウェハの酸化を極力抑制できる。
Also, during the rinsing process, pure water can be uniformly and quickly supplied to both surfaces of the wafer, thereby suppressing oxidation of the wafer as much as possible.

[実 施 例] 本発明の一実施例を第1図に基づき説明する。[Example] An embodiment of the present invention will be described based on FIG.

第1図は本発明のウェハ研磨方法を具現化した装置の一
例を示すもので、図中、既述した第2図の従来例と同一
符号は、同−或いは共通する要素を示すものである。
FIG. 1 shows an example of an apparatus embodying the wafer polishing method of the present invention. In the figure, the same reference numerals as those in the conventional example shown in FIG. 2 previously described indicate the same or common elements. .

即ち、1は上定盤、2は下定盤、3はウェハ支持体、4
は半導体ウェハである。
That is, 1 is the upper surface plate, 2 is the lower surface plate, 3 is the wafer support, and 4
is a semiconductor wafer.

ウェハ支持体3は、半導体ウェハ4を複数枚支持する。The wafer support 3 supports a plurality of semiconductor wafers 4.

本実施例におけるウェハ支持体3は、図面では1枚だけ
表されているが、その他にも同様のウェハ支持体3が定
盤1,2の周方向に適宜間隔で、配置されている。又、
各ウェハ支持体3が遊星歯車機構(図示せず)の遊星歯
車を介して回転し、又、上下の定盤1,2が太陽歯車に
より回転し、これらの回転によりウェハ支持盤3と上下
の定盤1.2とが相対的に回転しあっている。
Although only one wafer support 3 in this embodiment is shown in the drawing, other similar wafer supports 3 are arranged at appropriate intervals in the circumferential direction of the surface plates 1 and 2. or,
Each wafer support 3 rotates via a planetary gear of a planetary gear mechanism (not shown), and the upper and lower surface plates 1 and 2 are rotated by a sun gear. The surface plate 1.2 rotates relative to each other.

上室IIには、研磨液及び純水の供給ロアが配設され、
各供給ロアがチューブ8を介して研磨液受皿9と接続さ
れ、更に、本実施例では、下定盤2にも、研磨液及び純
水の供給口12が配設され、通路13を介して研磨液及
び純水が各供給口12に分配されるようにしである。1
4.15は研磨液と純水の供給をいずれかに切換える切
換弁である。
In the upper chamber II, a polishing liquid and pure water supply lower is arranged,
Each supply lower is connected to a polishing liquid receiver 9 via a tube 8, and furthermore, in this embodiment, the lower surface plate 2 is also provided with a supply port 12 for polishing liquid and pure water, and is connected to the polishing liquid via a passage 13. Liquid and pure water are distributed to each supply port 12. 1
4.15 is a switching valve that switches the supply of polishing liquid or pure water to either one.

このような要素を備えた装置を用いて半導体ウェハの両
面研磨を行う場合には、次のようにして行う。先ず、研
磨作業を行なう場合には、上定盤1の各供給ロアから研
磨液を供給する(この研磨液供給は、[従来の技術]の
項でも既述したので説明を省略する)他に、下定盤2側
からも通路13及び供給口12を介して研磨液を供給す
る。
When polishing both sides of a semiconductor wafer using an apparatus equipped with such elements, it is performed as follows. First, when performing polishing work, a polishing liquid is supplied from each supply lower of the upper surface plate 1 (this polishing liquid supply has already been described in the [Prior Art] section, so the explanation will be omitted). The polishing liquid is also supplied from the lower surface plate 2 side through the passage 13 and the supply port 12.

このようにしてウェハ4の両面に研磨液を供給した状態
で、研磨布5.6がウェハ4を挟持し、研磨布5,6を
ウェハ4の両面で相対的に回転させて、研磨を行う。こ
の作業工程が終ると、研磨液の供給を止め、代って上下
の定盤1,2に設けた供給ロア、12を介してウェハ4
の両面に上下のいずれの方向からも純水を供給して純水
リンスを行い、これらの一連の作業工程を経て研磨が終
了する。
With the polishing liquid supplied to both sides of the wafer 4 in this manner, the polishing cloths 5 and 6 sandwich the wafer 4, and the polishing cloths 5 and 6 are rotated relative to each other on both sides of the wafer 4 to perform polishing. . When this work process is finished, the supply of the polishing liquid is stopped and the polishing liquid is instead passed through the supply lowers 12 provided on the upper and lower surface plates 1 and 2 to the wafer 4.
Pure water is supplied to both sides from both the top and bottom to perform a pure water rinse, and polishing is completed through a series of these steps.

尚、本実施例の研磨作業では、上下の定盤1及び2とし
て、直径630 mmのステンレス製定盤を使用し、半
導体ウェハ4としては、GaASウェハで厚さ500μ
m、直径50馴のjJnドープ、半絶縁性(1,O,O
)面のアズラップウェハを用いた。又、上定盤側の研磨
液供給ロアは直径6mmのものが18個で、下定盤側の
研磨液供給口12も同様である。
In the polishing work of this example, stainless steel surface plates with a diameter of 630 mm were used as the upper and lower surface plates 1 and 2, and the semiconductor wafer 4 was a GaAS wafer with a thickness of 500 μm.
jJn doped, semi-insulating (1,O,O
) surface as-wrapped wafer was used. Further, there are 18 polishing liquid supply lowers each having a diameter of 6 mm on the upper surface plate side, and the same applies to the polishing liquid supply ports 12 on the lower surface plate side.

そして、研磨作業工程時には、半導体ウェハ4には面圧
80 Q / cm、定盤回転数として下定盤2が15
romで上定盤1が5rpmの回転数を減速機構を介し
て与え、又、研磨液は次亜塩素酸系のエツチング液を使
用し、上下の定盤1.2側から夫々100〜150cc
/minの研磨液を供給して研磨を行ったものである。
During the polishing process, the semiconductor wafer 4 is subjected to a surface pressure of 80 Q/cm, and the lower surface plate 2 is rotated at a speed of 15 Q/cm.
ROM, the upper surface plate 1 is given a rotation speed of 5 rpm via a deceleration mechanism, and a hypochlorous acid-based etching solution is used as the polishing liquid, and 100 to 150 cc are applied from the upper and lower surface plates 1 and 2, respectively.
Polishing was performed by supplying a polishing liquid of /min.

このような条件の下で研磨及び純水リンスの作業を行っ
たところ、GaASウェハには、従来のものに較べて、
スクラッチ、酸化等が殆ど生じない非常に良好な鏡面仕
上げの高品質半導体ウェハを得ることができた。
When polishing and rinsing with pure water were performed under these conditions, the GaAS wafers had the following properties compared to conventional ones:
It was possible to obtain a high quality semiconductor wafer with a very good mirror finish with almost no scratches, oxidation, etc.

[発明の効果] 以上のように本発明によれば、半導体ウェハの上下いず
れの方向からも研磨液及び純水を供給することにより、
研磨及び純水リンス作業の質的向上を図ることができ、
その結果、研磨むら、スクラッチ、酸化等の発生を有効
に防止して半導体ウェハの品質の向上化を図ることがで
きる。
[Effects of the Invention] As described above, according to the present invention, by supplying the polishing liquid and pure water from both above and below the semiconductor wafer,
The quality of polishing and pure water rinsing work can be improved,
As a result, it is possible to effectively prevent the occurrence of polishing unevenness, scratches, oxidation, etc., and improve the quality of semiconductor wafers.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のウェハ研磨方法を具現化した装置の一
例を表す部分断面図、第2図は従来のウェハ研磨装置を
表す部分断面図である。 1:上定盤、 2:下定盤、 3:ウェハ支持体、 4:半導体ウェハ、 5.6:研磨具(研磨布)、 7.12:研磨液及び純水の供給口。 冨 1 旧 ■上定盤     4:半導体ウェハ
FIG. 1 is a partial sectional view showing an example of an apparatus embodying the wafer polishing method of the present invention, and FIG. 2 is a partial sectional view showing a conventional wafer polishing apparatus. 1: Upper surface plate, 2: Lower surface plate, 3: Wafer support, 4: Semiconductor wafer, 5.6: Polishing tool (polishing cloth), 7.12: Supply port for polishing liquid and pure water. Tomi 1 Old ■ Upper surface plate 4: Semiconductor wafer

Claims (1)

【特許請求の範囲】[Claims] (1)半導体ウェハの両面を研磨具付きの上下の定盤で
挟持し、この半導体ウェハの配置箇所に研磨液を供給し
、且つ前記半導体ウェハの両面と前記研磨具とを相対的
に移動させて研磨を行い、その後純水を供給して前記半
導体ウェハの両面をリンスするウェハ研磨方法において
、前記研磨液及びリンス用純水の供給口を前記上下の定
盤の双方に配設し、これらの供給口を介して前記研磨液
及びリンス用純水を前記半導体ウェハの両面に上下いず
れの方向からも供給して、ウェハ研磨作業及びリンス作
業を行うことを特徴とする半導体ウェハの研磨方法。
(1) Both sides of the semiconductor wafer are held between upper and lower surface plates equipped with a polishing tool, a polishing liquid is supplied to the location where the semiconductor wafer is placed, and both sides of the semiconductor wafer and the polishing tool are moved relative to each other. In the wafer polishing method, in which polishing is performed by polishing the semiconductor wafer, and then deionized water is supplied to rinse both sides of the semiconductor wafer, supply ports for the polishing liquid and deionized water for rinsing are arranged on both the upper and lower surface plates, and A method for polishing a semiconductor wafer, characterized in that the polishing liquid and the deionized water for rinsing are supplied to both sides of the semiconductor wafer from either the upper or lower direction through a supply port to perform a wafer polishing operation and a rinsing operation.
JP62313035A 1987-12-10 1987-12-10 Grinding method for semiconductor wafer Pending JPH01153273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62313035A JPH01153273A (en) 1987-12-10 1987-12-10 Grinding method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62313035A JPH01153273A (en) 1987-12-10 1987-12-10 Grinding method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH01153273A true JPH01153273A (en) 1989-06-15

Family

ID=18036424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62313035A Pending JPH01153273A (en) 1987-12-10 1987-12-10 Grinding method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH01153273A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0392264A (en) * 1989-09-04 1991-04-17 Hitachi Ltd High-accuracy lapping method and device for composite material
JP2000317812A (en) * 1999-03-26 2000-11-21 Applied Materials Inc Carrier head for supplying polishing slurry
US6379230B1 (en) 1997-04-28 2002-04-30 Nec Corporation Automatic polishing apparatus capable of polishing a substrate with a high planarization
JP2014195119A (en) * 2011-09-15 2014-10-09 Siltronic Ag Method for double-side polishing of semiconductor wafer
CN110900342A (en) * 2019-11-29 2020-03-24 上海磐盟电子材料有限公司 Sheet grinding machine

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0392264A (en) * 1989-09-04 1991-04-17 Hitachi Ltd High-accuracy lapping method and device for composite material
US6379230B1 (en) 1997-04-28 2002-04-30 Nec Corporation Automatic polishing apparatus capable of polishing a substrate with a high planarization
JP2000317812A (en) * 1999-03-26 2000-11-21 Applied Materials Inc Carrier head for supplying polishing slurry
JP4693203B2 (en) * 1999-03-26 2011-06-01 アプライド マテリアルズ インコーポレイテッド Carrier head for supplying polishing slurry
JP2014195119A (en) * 2011-09-15 2014-10-09 Siltronic Ag Method for double-side polishing of semiconductor wafer
US9308619B2 (en) 2011-09-15 2016-04-12 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
CN110900342A (en) * 2019-11-29 2020-03-24 上海磐盟电子材料有限公司 Sheet grinding machine

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