JPH0115141B2 - - Google Patents
Info
- Publication number
- JPH0115141B2 JPH0115141B2 JP8873982A JP8873982A JPH0115141B2 JP H0115141 B2 JPH0115141 B2 JP H0115141B2 JP 8873982 A JP8873982 A JP 8873982A JP 8873982 A JP8873982 A JP 8873982A JP H0115141 B2 JPH0115141 B2 JP H0115141B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- signal
- level
- optical pulse
- pulse wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 14
- 230000001052 transient effect Effects 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 19
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8873982A JPS58206135A (ja) | 1982-05-27 | 1982-05-27 | Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8873982A JPS58206135A (ja) | 1982-05-27 | 1982-05-27 | Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58206135A JPS58206135A (ja) | 1983-12-01 |
| JPH0115141B2 true JPH0115141B2 (enrdf_load_stackoverflow) | 1989-03-15 |
Family
ID=13951284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8873982A Granted JPS58206135A (ja) | 1982-05-27 | 1982-05-27 | Ｍｏｓ型ダイオ−ドの界面における少数キヤリアトラツプ準位測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58206135A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0622259B2 (ja) * | 1982-07-28 | 1994-03-23 | 富士通株式会社 | 界面電気伝導評価方法 |
| JP4645540B2 (ja) * | 2006-07-03 | 2011-03-09 | 株式会社豊田中央研究所 | 有機材料の評価装置及び評価方法 |
| JP6406656B2 (ja) * | 2013-08-23 | 2018-10-17 | 株式会社Ｓｃｒｅｅｎホールディングス | 検査装置および検査方法 |
| JP7310727B2 (ja) * | 2020-06-15 | 2023-07-19 | 信越半導体株式会社 | シリコン試料中の酸素濃度測定方法 |
-
1982
- 1982-05-27 JP JP8873982A patent/JPS58206135A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58206135A (ja) | 1983-12-01 |
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